SO T4 57 PMN27XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -5.7 A - 27 30 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G TSOP6 (SOT457) S 017aaa259 6. Ordering information Table 3. Ordering information Type number PMN27XPEA Package Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN27XPEA BD PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -5.7 A VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -3.5 A - -22 A [2] - 530 mW [1] - 1250 mW - 8330 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.3 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage PMN27XPEA Product data sheet [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] [3] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Measured between all pins. 2 All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature 017aaa760 -102 Limit RDSon = VDS/ID ID (A) -10 tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C -10-2 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-1 0 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 Min Typ Max Unit [1] - 206 237 K/W [2] - 86 100 K/W [3] - 52 60 K/W © NXP Semiconductors N.V. 2014. All rights reserved 4 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - 13 15 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t ≤ 5 s 2 017aaa761 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm duty cycle = 1 102 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa762 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 0.5 0.25 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 56 64 mΩ VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 39 44 mΩ VDS = -10 V; ID = -3 A; Tj = 25 °C - 16 - S total gate charge VDS = -10 V; ID = -3 A; VGS = -4.5 V; - 15 22.5 nC QGS gate-source charge Tj = 25 °C - 3 - nC QGD gate-drain charge - 3 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 1770 - pF Coss output capacitance Tj = 25 °C - 254 - pF Crss reverse transfer capacitance - 180 - pF td(on) turn-on delay time VDS = -10 V; ID = -3 A; VGS = -4.5 V; - 15 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 22 - ns td(off) turn-off delay time - 37 - ns tf fall time - 29 - ns - -0.7 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMN27XPEA Product data sheet IS = -1.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa763 -24 -2.5 V ID (A) VGS = -2.4 V -16 017aaa129 - 10- 3 -8 V -4.5 V -3 V ID (A) - 10- 4 -2.2 V (1) (2) (3) -2 V - 10- 5 -8 -1.8 V 0 Fig. 6. 0 -1 -2 -3 - 10- 6 0.0 -4 VDS (V) - 0.5 Tj = 25 °C Tj = 25 °C; VDS = -3 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. 017aaa764 120 -1.8 V -2 V -2.2 V - 1.0 RDSon (mΩ) - 1.5 Sub-threshold drain current as a function of gate-source voltage 017aaa765 120 -2.4 V VGS (V) RDSon (mΩ) -2.5 V 80 80 -3 V 40 Tj = 150 °C 40 -4.5 V Tj = 25 °C VGS = -8 V 0 0 -8 -16 ID (A) 0 -24 Tj = 25 °C Fig. 8. Product data sheet -2 -4 VGS (V) -6 ID = -3 A Drain-source on-state resistance as a function of drain current; typical values PMN27XPEA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa766 -24 017aaa767 1.50 a ID (A) 1.25 -16 1.00 -8 0.75 Tj = 150 °C 0 0 Tj = 25 °C -1 -2 VGS (V) 0.50 -60 -3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values VGS(th) (V) 120 Ciss 103 typ Coss 60 120 Tj (°C) 10 180 ID = -0.25 mA; VDS = VGS Product data sheet 0 -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMN27XPEA Crss 102 -0.5 0 180 C (pF) min 0 -60 Tj (°C) 017aaa769 104 max -1.0 60 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa768 -1.5 0 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa770 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 3 6 9 Fig. 15. Gate charge waveform definitions 12 15 QG (nC) ID = -3 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa771 -5 IS (A) -4 -3 -2 -1 0 Tj = 150 °C 0 -0.4 Tj = 25 °C -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 12. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 B E y A HE 6 5 X v M A 4 Q pin 1 index A A1 1 2 c 3 Lp e bp w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT457 JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Fig. 18. Package outline TSOP6 (SOT457) PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for TSOP6 (SOT457) 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20. Wave soldering footprint for TSOP6 (SOT457) PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMN27XPEA v.1 20140619 Product data sheet - - PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 16 PMN27XPEA NXP Semiconductors 20 V, single P-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 June 2014 PMN27XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 19 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 16 / 16