Datasheet

UNISONIC TECHNOLOGIES CO., LTD
TIP122
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR

DESCRIPTION
The UTC TIP122 is a NPN epitaxial transistor, designed for use
in general purpose amplifier low-speed switching applications.

EQUIVALENT TEST
C
B
R1
R2
E
(R1≈6kΩ, R2≈0.5kΩ)

ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
TIP122-T60-K
TIP122L-T60-K
TIP122-TA3-T
TIP122L-TA3-T
TIP122-TF3-T
TIP122L-TF3-T
TIP122-TN3-R
TIP122L-TN3-R
Note: Pin Assignment: E: Emitter
C: Collector

Package
TO-126
TO-220
TO-220F
TO-252
B: Base
Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Bulk
Tube
Tube
Tape Reel
MARKING
TO-220 / TO-220F / TO-252
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-126
1 of 4
QW-R204-016.E
TIP122

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
IC Collector Current
RATINGS
UNIT
100
V
100
V
5
V
5
A
TO-126
36
W
TO-220
65
W
Power Dissipation (TC=25°C)
PD
TO-220F
34
W
TO-252
38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Collector-Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCEO
VCE(SAT)1
VCE(SAT)2
VBE(ON)
ICBO
ICEO
IEBO
DC Current Gain
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
hFE
TEST CONDITIONS
IC=100mA
IC=3A, IB=12mA
IC=5A, IB=20mA
VCE=3V, IC=3A
VCB=100V
VCE=50V
VEB=5V
IC=500mA, VCE=3V
IC=3A, VCE=3V
MIN
100
TYP MAX UNIT
V
2
V
4
V
2.5
V
200 uA
500 uA
2
mA
1000
1000
2 of 4
QW-R204-016.E
TIP122
TYPICAL CHARACTERISTICS
Collector Current, IC(A)
Base-Emitter Saturation
Voltage, VBE(ON) (mV)

NPN SILICON TRANSISTOR
PD vs. TA
Power Dissipation, PD (W)
80
TO-220
60
40
TO-252
20 TO-220F
TO-126
0
0 20
40 60 80 100 120 140 160
Case Temperature, TA (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R204-016.E
TIP122
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R204-016.E