SO T6 66 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Tj = 25 °C - - -30 V -8 - 8 V - - -220 mA - 2.8 4.1 Ω Per transistor VDS drain-source voltage VGS gate-source voltage drain current ID VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon [1] drain-source on-state VGS = -4.5 V; ID = -200 mA; resistance Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D1 4 D2 G1 1 2 G2 3 SOT666 (SOT666) S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number NX3008PBKV Package Name Description Version SOT666 plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code[1] NX3008PBKV AB [1] % = placeholder for manufacturing site code NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage ID drain current Per transistor total power dissipation Ptot 8 V [1] - -220 mA VGS = -4.5 V; Tamb = 100 °C [1] - -140 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 VGS = -4.5 V; Tamb = 25 °C Tamb = 25 °C - -0.9 A [2] - 330 mW [1] - 390 mW - 1090 mW Tsp = 25 °C Per device Tamb = 25 °C [2] Ptot total power dissipation - 500 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - -220 mA HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2. -25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature 001aao254 -10 lD (A) -1 (1) -10-1 (2) (3) (4) -10-2 -10-1 (5) -1 -10 VDS (V) -102 IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 250 K/W [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W Per device Rth(j-a) Per transistor Rth(j-a) thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB; standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.6 -0.9 -1.1 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -30 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - -0.2 -1 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - -0.2 -1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - -10 - nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - -10 - nA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - -1 - nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - -1 - nA VGS = -4.5 V; ID = -200 mA; Tj = 25 °C - 2.8 4.1 Ω RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; ID = -200 mA; Tj = 150 °C - 5.3 7.8 Ω VGS = -2.5 V; ID = -10 mA; Tj = 25 °C - 5.3 6.5 Ω VDS = -10 V; ID = -200 mA; Tj = 25 °C - 160 - mS VDS = -15 V; ID = -200 mA; VGS = -4.5 V; Tj = 25 °C - 0.55 0.72 nC - 0.23 - nC - 0.09 - nC - 31 46 pF - 6.5 - pF - 2.3 - pF - 19 38 ns - 30 - ns Dynamic characteristics (per transistor) QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 65 130 ns tf fall time - 38 - ns -0.47 -0.88 -1.2 V VDS = -20 V; RL = 250 Ω; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode (per transistor) VSD source-drain voltage NX3008PBKV Product data sheet IS = -200 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao256 -0.25 -4.5 V ID (A) 001aao257 -10-3 -3 V -0.20 ID (A) -2.5 V (1) (2) (3) -10-4 -0.15 -0.10 -2 V -10-5 -0.05 VGS = -1.5 V 0.00 0 -1 -2 -3 VDS (V) -4 -10-6 0.0 Tj = 25 °C -0.5 -1.0 VGS (V) -1.5 Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 001aao258 14 RDS (on) (Ω) 12 (1) (2) (3) Fig 7. Sub-threshold drain current as a function of gate-source voltage 001aao259 14 RDS (on) (Ω) 12 (4) 10 10 8 8 6 6 (1) (5) 4 4 (6) (2) 2 0 2 0 -0.05 -0.10 -0.15 0 -0.20 -0.25 ID (A) 0 -1 Tj = 25 °C ID = -200 mA (1) VGS = -1.75 V (1) Tj = 150 °C (2) VGS = -2.0 V (2) Tj = 25 °C -2 -3 -4 VGS (A) -5 (3) VGS = -2.25 V (4) VGS = -2.5 V (5) VGS = -3.0 V (6) VGS = -4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values NX3008PBKV Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao260 -0.25 001aao261 2.0 ID (A) a -0.20 1.5 (1) (2) -0.15 1.0 -0.10 0.5 -0.05 0.00 0 -1 -2 VGS (V) -3 0.0 -60 0 60 120 Tj (˚C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao262 -1.5 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 001aao263 102 VGS(th) (V) C (pF) (1) (1) -1.0 (2) 10 (2) (3) -0.5 (3) 0.0 -60 0 60 120 Tj (˚C) 180 1 -10-1 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1)Ciss (2) typical values (2)Coss (3) minimum values (3)Crss Fig 12. Gate-source threshold voltage as a function of junction temperature NX3008PBKV Product data sheet -10 VDS (V) -102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao264 -5 VGS (V) VDS -4 ID -3 VGS(pl) -2 VGS(th) VGS -1 QGS1 QGS2 QGS 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 QG (nC) QGD QG(tot) 003aaa508 ID = -200 mA; VDS = -15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao265 -0.25 IS (A) -0.20 -0.15 (1) (2) -0.10 -0.05 0.00 0.0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 11 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 18. Package outline SOT666 (SOT666) NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 19. Reflow soldering footprint for SOT666 (SOT666) NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008PBKV v.1 20110729 Product data sheet - - NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 12. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved. 15 of 17 NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11 Quality information . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .14 Legal information. . . . . . . . . . . . . . . . . . . . . . . .15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Contact information. . . . . . . . . . . . . . . . . . . . . .16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 July 2011 Document identifier: NX3008PBKV