UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY FEATURES * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Package Lead Free Halogen Free 2SC5027L-x-TA3-T 2SC5027G-x-TA3-T TO-220 2SC5027L-x-TF3-T 2SC5027G-x-TF3-T TO-220F Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R203-027.D 2SC5027 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Power Dissipation PC 50 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEX(SUS) L=2mH, Clamped ICBO VCB=800V, IE=0 IEBO VEB=5V, IC=0 hFE1 VCE=5V, IC=0.2A hFE 2 VCE=5V, IC=1A VCE (SAT) IC=1.5A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tS RL=200Ω tF MIN 850 800 7 TYP MAX 800 UNIT V V V V 10 8 10 10 40 μA μA 2 1.5 V V pF MHz μs μs μs 60 15 0.5 3 0.3 CLASSIFICATION of hFE1 RANK RANGE N 10 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 15 ~ 30 O 20 ~ 40 2 of 5 QW-R203-027.D 2SC5027 TIME, tON, tstg, tF (μs) TYPICAL CHARACTERISTICS Collector Current, Ic (A) Saturation Voltage, VCE(SAT) (V) Collector Current, IC (A) NPN SILICON TRANSISTOR 0 10 s D C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R203-027.D 2SC5027 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN SILICON TRANSISTOR 4 of 5 QW-R203-027.D 2SC5027 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R203-027.D