Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7P20
Power MOSFET
200V P-CHANNEL MOSFET
„
DESCRIPTION
The 7P20 uses advanced proprietary, planar stripe, DMOS
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use
as a load switch or in PWM applications. They are also well suited
for high efficiency switching DC/DC converters.
„
FEATURES
* RDS(ON) ≦ 0.69Ω @VGS = -10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 25 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7P20L-TN3-R
7P20G-TN3-R
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-252
1
G
Pin Assignment
2
3
D
S
Packing
Tape Reel
1 of 8
QW-R502-288.B
7P20
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-200
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
-5.7
A
Pulsed Drain Current (Note 2)
IDM
-22.8
A
Avalanche Current (Note 2)
IAR
-5.7
A
Single Pulsed Avalanche Energy (Note 3)
EAS
570
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.5
V/ns
Ta = 25°C
2.5
Power Dissipation
W
PD
TC = 25°C
55
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω
4. ISD≦-7.3A, di/dt≦300A/μs, VDD≦BVDSS
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
100
2.27
UNIT
°C /W
°C /W
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250 µA
Breakdown Voltage Temperature
ID=-250µA,
ΔBVDSS/ΔTJ
Coefficient
Referenced to25°C
Drain-Source Leakage Current
IDSS
VDS=-200V, VGS=0V
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-2.85A
Forward Transconductance
gFS
VDS=-40V, ID=-2.85A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-160V, VGS=-10V,
Gate Source Charge
QGS
ID=-7.3A (Note 1, 2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=-100V, ID=-7.3A,
Turn-ON Rise Time
tR
RG=25Ω(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-5.7A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
VGS=0V, IS=-7.30 A
Body Diode Reverse Recovery Time
tRR
dIF/dt=100A/s (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-200
V
-0.1
V/°C
-1
±100
µA
nA
-4.0
0.69
V
Ω
S
590
140
25
770
180
35
pF
pF
pF
19
4.6
9.5
15
110
30
42
25
40
230
70
90
nC
nC
nC
ns
ns
ns
ns
-5.0
-5.7
V
A
-22.8
A
-2.0
0.54
3.7
180
1.07
ns
µC
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QW-R502-288.B
7P20
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Compliment of D.U.T.
(N-Channel)
* dv/dt controlled by RG
* ISD controlled by pulse period
VGS
VGS
(Driver)
VDD
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
IRM
di/dt
Body Diode Reverse Current
VDS
(D.U.T.)
VDD
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-288.B
7P20
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
tp
VDD
RG
-10V
D.U.T.
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
ID(t)
VDD
Time
VDS(t)
IAS
BVDSS
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-288.B
7P20
Power MOSFET
TYPICAL CHARACERISTICS
„
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, -ID (µA)
Drain Current, -ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0
1
2
5
3
4
Gate Threshold Voltage, -VTH (V)
Drain Current, -ID (A)
Drain Current, -ID (A)
0
100
150
200
250
50
Drain-Source Breakdown Voltage, -BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-288.B
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