Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD4606
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UTC UD4606 provides excellent RDS(ON) and low gate
charge by using advanced trench technology MOSFETs. The
complementary MOSFETs may be help to form a level shifted high
side switch and also for lots of other applications.

DIP-8
FEATURES
* N-Channel: 30V/6.9A
SOP-8
RDS(ON) = 22.5 mΩ (typ.) @VGS =10V
RDS(ON) = 34.5 mΩ (typ.) @VGS=4.5V
* P-Channel: -30V/-6A
RDS(ON) = 28 mΩ (typ.) @VGS= -10V
RDS(ON) = 44 mΩ (typ.) @VGS= -4.5V
* Reliable and rugged

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UD4606L-D08-T
UD4606G-D08-T
DIP-8
UD4606G-S08-R
SOP-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Pin Assignment
Packing
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
Tube
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
1 of 9
QW-R502-144.E
UD4606

Power MOSFET
MARKING
DIP-8

SOP-8
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 11
QW-R502-144.E
UD4606

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note2)
Pulsed Drain Current (Note2)
SYMBOL
VDSS
VGSS
ID
IDM
DIP-8
SOP-8
Power Dissipation
Junction Temperature
Storage Temperature
RATINGS
30
±20
6.9
30
2.5
2
+150
-55 ~ +150
PD
TJ
TSTG
UNIT
V
V
A
A
W
W
°С
°С
P-CHANNEL
PARAMETER
RATINGS
UNIT
Drain-Source Voltage
-30
V
Gate-Source Voltage
±20
V
Continuous Drain Current (Note 2)
-6
A
Pulsed Drain Current (Note 2)
-30
A
DIP-8
2.5
W
Power Dissipation
PD
SOP-8
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t≤10sec

SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
DIP-8
Junction to Ambient (Note)
SOP-8
Note: Surface Mounted on 1in 2 pad area, t≤10sec
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
MIN
TYP
74
67
MAX
110
80
UNIT
°С/W
°С/W
3 of 11
QW-R502-144.E
UD4606

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=6.9A
VGS=4.5V, ID=5A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note2)
QG
VDS=15V, VGS=10V, ID=6.9A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=15V, VGS=10V, RG=3Ω,
RL=2.2Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current (Note3)
IS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Reverse Recovery Time
tRR
IDS=6.9A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
1.9
22.5
34.5
MAX UNIT
1
100
V
uA
nA
3
28
42
V
mΩ
mΩ
680
102
77
pF
pF
pF
13.8
1.82
3.2
4.6
4.1
20.6
5.2
nC
nC
nC
ns
ns
ns
ns
0.76
16.5
7.8
3
1
A
V
ns
nC
4 of 11
QW-R502-144.E
UD4606

Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
-1.2
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note2)
QG
VDS=-15V, VGS=-10V, ID=-6A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-15V, VGS=-10V,
RG=3Ω, RL=2.7Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current (Note3)
IS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Reverse Recovery Time
tRR
IDS=-6A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
2
3. Surface Mounted on 1in pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
-2
28
44
MAX UNIT
-1
±100
V
uA
nA
-2.4
35
58
V
mΩ
mΩ
920
190
122
pF
pF
pF
18.5
2.7
4.5
7.7
5.7
20.2
9.5
nC
nC
nC
ns
ns
ns
ns
-0.76
20
8.8
-4.2
-1
A
V
ns
nC
5 of 11
QW-R502-144.E
UD4606

Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current,ID (A)
Capacitance (pF)
Drain to Source OnResistance,RDS(ON) (mΩ)
Drain Current,ID (A)
N-CHANNEL
On-Resistance vs. Gate-Source Voltage
70
Body Diode Characteristics
1.0E+01
ID=5A
60
1.0E+00
50
1.0E-01
125℃
40
1.0E-02
125℃
1.0E-03
30
25℃
20
10
2
4
6
8
10
Gate to Source Voltage,VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25℃
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Body Diode Forward Voltage,VSD (V)
6 of 11
QW-R502-144.E
UD4606

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 11
QW-R502-144.E
UD4606

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 11
QW-R502-144.E
UD4606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

P-CHANNEL
On-Region Characteristics
-10V
Drain Current, -ID (A)
25
-6V
Transfer Characteristics
30
-4.5V
VDS=-5V
-5V
20
25
Drain Current, -ID (A)
30
-4V
15
10
-3.5V
5
VGS=-3V
20
15
10
125
5
0
25
0
0
1
2
3
4
Drain to Source Voltage, -VDS (V)
5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate to Source Voltage, -VGS (V)
On-Resistance vs. Drain Current
and Gate Voltage
60
Capacitance Characteristics
1500
50
1250
VGS=-4.5V
45
Capacitance (pF)
Drain to Source OnResistance,RDS(ON) (mΩ)
55
40
35
VGS=-10V
30
25
20
CISS
1000
750
500
COSS
250
15
CRSS
0
10
0
5
10
15
20
Drain Current, -ID (A)
On-Resistance vs.Gate-Soure Voltage
80
0
25
1.0E+01
5
10
15
20
30
25
Drain to Source Voltage, -VDS (V)
Body-Diode Characteristics
ID=-6A
70
1.0E+00
60
1.0E-01
125
50
1.0E-02
125
40
1.0E-03
30
25
1.0E-04
20
25
1.0E-05
10
0
3
4
5
6
7
8
9
Gate to Source Voltage, -VGS (V)
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
Body Diode Forward Voltage, -VSD (V)
9 of 11
QW-R502-144.E
UD4606

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10 of 11
QW-R502-144.E
UD4606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

For N / P-CHANNEL
Power Derating
Power Derating (%)
100
60
20
0
0
50
100
150
Ambient Temperature, TA (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
11 of 11
QW-R502-144.E
Similar pages