Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UK2996
MOSFET
600V SILICON N-CHANNEL
POWER MOSFET
„
1
DESCRIPTION
The UK2996 is an N-channel enhancement mode field-effect power
transistor. Intended for use in high voltage, high speed switching
applications in power supplies, DC-DC converter, relay drive and PWM
motor drive controls.
„
1
TO-220F
FEATURES
* Fast Switching Times
* Improved Inductive Ruggedness
* High Forward Transfer Admittance
* Low on Resistance
* Low Leakage Current
* Lower Input Capacitance
„
TO-220
1
TO-220F1
SYMBOL
1
TO-220F2
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UK2996L-TA3-T
UK2996G-TA3-T
UK2996L-TF1-T
UK2996G-TF1-T
UK2996L-TF2-T
UK2996G-TF2-T
UK2996L-TF3-T
UK2996G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
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MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Drain to Gate Voltage (RGS = 20 kΩ)
Gate to Source Voltage
Avalanche Current
Single Pulsed Avalanche energy (Note 2)
Repetitive Avalanche Energy (Note 3)
Power Dissipation (TC = 25°C)
SYMBOL
VDSS
ID
IDM
RATINGS
600
10
30
VDGR
VGSS
IAR
600
±30
10
252
4.5
45
36
38
+150
EAS
EAR
TO-220
TO-220F/TO-220F1
TO-220F2
Junction Temperature
PD
TJ
UNIT
V
A
A
V
V
A
mJ
mJ
W
°C
°C
Storage Temperature
TSTG
-55 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 4.41 mH, IAR = 10 A, VDD = 90 V, RG = 25 Ω, starting TJ = 25°C.
3. Pulse width and frequency is limited by TJ.
„
THERMAL DATA
CHARACTERISTICS
Channel to Ambient
TO-220
Channel to Case
TO-220F/TO-220F1
TO-220F2
„
SYMBOL
θJA
θJC
RATINGS
62.5
2.78
3.47
3.29
UNIT
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PARAMETER
Gate−Source Breakdown Voltage
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current
Drain Source Leakage Current
Static Drain−Source ON Resistance
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn−off Delay Time
SYMBOL
BVGSS
BVDSS
VGS(TH)
IGSS
IDSS
RDS (ON)
gFS
CISS
CRSS
COSS
QG
QGS
QGD
tON
tR
tOFF
TEST CONDITIONS
VDS = 0V, IG = ±10µA
VGS = 0V, ID = 10mA
VDS = 10V, ID = 1mA
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
VDS = 20V, VGS = 0V, f = 1MHz
ID = 10A, VDD ≈ 400V, VGS = 10V
MIN TYP MAX
±30
600
2.0
4.0
±10
100
0.74 1. 0
3.4 6.8
1500
13
140
38
21
17
55
15
145
Switching Time
UNIT
V
V
V
µA
µA
Ω
S
pF
nC
ns
Turn-off Fall Time
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
27
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MOSFET
SOURCE−DRAIN DIODE CHARACTERISTICS (TA = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode Forward Voltage
VSD
VGS = 0V, IS = 10A
Continuous Source Current (body diode)
IS
Integral Reverse p-n Junction
Diode in the MOSFET
Drain
Pulse Source Current (body diode)
MIN
TYP MAX UNIT
-1.7
V
10
A
ISM
30
A
Gate
Source
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0V, IS = 10A,
dIF/dt = 100 A/µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1600
17
ns
µC
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MOSFET
TEST CIRCUIT AND WAVE FORM
LL
VDS
BVDSS
IAR
ID
RG
DUT
+15V
-15V
ID (t)
VDD
VDS (t)
VDD
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tP
Time
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„
MOSFET
TYPICAL CHARACTERISTICS
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www.unisonic.com.tw
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MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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