UNISONIC TECHNOLOGIES CO., LTD UP2790 Power MOSFET SWITCHING N- AND P-CHANNEL POWER MOSFET DESCRIPTION The UTC UP2790 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use in Motor Drive application. FEATURES * Low on-state resistance: N-channel: VGS =10V, ID=3A; RDS(ON) = 28 mΩ (Max.) VGS=4.5V, ID=3A; RDS(ON) = 40 mΩ (Max.) P-channel: VGS= -10V, ID=-3A; RDS(ON) = 60 mΩ (Max.) VGS=-4.5V, ID=-3A; RDS(ON) = 80 mΩ (Max.) * Low input capacitance N-channel : CISS with 500 pF (Typ.) P-channel : CISS with 460 pF (Typ.) * Built-in gate protection diode SYMBOL ORDERING INFORMATION Ordering Number Note: UP2790G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 S 2 G Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel 1 of 5 QW-R502-339.C UP2790 Power MOSFET MARKING PIN CONFIGURATION Source 1 1 8 Drain 1 Gate 1 2 7 Drain 1 Source 2 3 6 Drain 2 Gate 2 4 5 Drain 2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-339.C UP2790 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) N-Channel PARAMETER Drain to Source Voltage (VGS=0V) Gate to Source Voltage (VDS=0V) Continuous Drain Current Pulsed Drain Current (Note 2) Single Avalanche Current (Note 3) Single Avalanche Energy (Note 3) Power Dissipation (Note 4) Junction Temperature Storage Temperature SYMBOL VDSS VGSS ID IDM IAS EAS PD TJ TSTG RATINGS 30 ±20 6 24 6 3.6 1.7 +150 -55 ~ +150 UNIT V V A A A mJ W °C °C P-Channel PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (VGS=0V) VDSS -30 V Gate to Source Voltage (VDS=0V) VGSS ±20 V Drain Current (DC) ID -6 A Pulsed Drain Current (Note 2) IDM -24 A Single Avalanche Current (Note 3) IAS -6 A Single Avalanche Energy (Note 3) EAS 3.6 mJ Power Dissipation (Note 4) PD 1.7 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10 μs, Duty Cycle≤1% 3. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 1 4. L = 0.1mH, VDD = x VDSS, RG = 25 Ω, Starting TJ = 25°C 2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-339.C UP2790 Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-Channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS IGSS VGS=0V, ID=250uA VDS =30 V, VGS =0 V VGS = ±16 V, VDS=0 V 30 VGS(TH) VDS =10V, ID =1mA VGS =10 V, ID =3 A VGS =4.5 V, ID =3 A VGS =4.0 V, ID =3 A 1.5 RDS(ON) 21 28 34 DYNAMIC PARAMETERS Input Capacitance CISS VDS =10 V, VGS =0 V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V, VGS=10 V ID=3 A, RG=10 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDD =24 V, VGS =10 V, ID =6 A Gate to Source Charge QGS Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS = 6 A, VGS =0V (Note) Diode Continuous Forward Current IS Diode Pulse Current ISM 10 ±10 V µA µA 2.5 28 40 53 V mΩ mΩ mΩ 500 135 77 pF pF pF 9.2 8.8 28 7.4 12.6 1.7 3.8 ns ns ns ns nC nC nC 0.85 6 24 V A A P-Channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250uA VDS =-30 V, VGS =0 V VGS = ±16 V, VDS=0 V -30 VGS(TH) VDS =-10V, ID =-1mA VGS =-10 V, ID =-3 A VGS =-4.5 V, ID =-3 A VGS =-4.0 V, ID =-3 A -1.0 RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS =-10 V, VGS =0 V, f=1.0MHz VDD=-15V, VGS=-10 V ID=-3 A , RG=10 Ω, VDD =-24 V, VGS =-10 V, ID =-6 A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 43 58 65 -10 ±10 V µA µA -2.5 60 80 110 V mΩ mΩ mΩ 460 130 77 pF pF pF 8.5 4.8 42 19 11 1.7 3.3 ns ns ns ns nC nC nC 4 of 6 QW-R502-339.C UP2790 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS = -6A, VGS =0V (Note) Diode Continuous Forward Current IS Diode Pulse Current ISM Note: Pulsed UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.92 -6 -24 V A A 5 of 6 QW-R502-339.C UP2790 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-339.C