Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UP2790
Power MOSFET
SWITCHING N- AND
P-CHANNEL POWER MOSFET

DESCRIPTION
The UTC UP2790 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use in Motor Drive application.

FEATURES
* Low on-state resistance:
N-channel: VGS =10V, ID=3A;
RDS(ON) = 28 mΩ (Max.)
VGS=4.5V, ID=3A;
RDS(ON) = 40 mΩ (Max.)
P-channel: VGS= -10V, ID=-3A; RDS(ON) = 60 mΩ (Max.)
VGS=-4.5V, ID=-3A; RDS(ON) = 80 mΩ (Max.)
* Low input capacitance
N-channel : CISS with 500 pF (Typ.)
P-channel : CISS with 460 pF (Typ.)
* Built-in gate protection diode

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UP2790G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
S
2
G
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
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QW-R502-339.C
UP2790
Power MOSFET

MARKING

PIN CONFIGURATION
Source 1
1
8
Drain 1
Gate 1
2
7
Drain 1
Source 2
3
6
Drain 2
Gate 2
4
5
Drain 2
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www.unisonic.com.tw
2 of 6
QW-R502-339.C
UP2790

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
N-Channel
PARAMETER
Drain to Source Voltage (VGS=0V)
Gate to Source Voltage (VDS=0V)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Avalanche Current (Note 3)
Single Avalanche Energy (Note 3)
Power Dissipation (Note 4)
Junction Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID
IDM
IAS
EAS
PD
TJ
TSTG
RATINGS
30
±20
6
24
6
3.6
1.7
+150
-55 ~ +150
UNIT
V
V
A
A
A
mJ
W
°C
°C
P-Channel
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (VGS=0V)
VDSS
-30
V
Gate to Source Voltage (VDS=0V)
VGSS
±20
V
Drain Current (DC)
ID
-6
A
Pulsed Drain Current (Note 2)
IDM
-24
A
Single Avalanche Current (Note 3)
IAS
-6
A
Single Avalanche Energy (Note 3)
EAS
3.6
mJ
Power Dissipation (Note 4)
PD
1.7
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10 μs, Duty Cycle≤1%
3. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
1
4. L = 0.1mH, VDD =
x VDSS, RG = 25 Ω, Starting TJ = 25°C
2
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QW-R502-339.C
UP2790

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-Channel
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS =30 V, VGS =0 V
VGS = ±16 V, VDS=0 V
30
VGS(TH)
VDS =10V, ID =1mA
VGS =10 V, ID =3 A
VGS =4.5 V, ID =3 A
VGS =4.0 V, ID =3 A
1.5
RDS(ON)
21
28
34
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =10 V, VGS =0 V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, VGS=10 V
ID=3 A, RG=10 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDD =24 V, VGS =10 V, ID =6 A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS = 6 A, VGS =0V (Note)
Diode Continuous Forward Current
IS
Diode Pulse Current
ISM
10
±10
V
µA
µA
2.5
28
40
53
V
mΩ
mΩ
mΩ
500
135
77
pF
pF
pF
9.2
8.8
28
7.4
12.6
1.7
3.8
ns
ns
ns
ns
nC
nC
nC
0.85
6
24
V
A
A
P-Channel
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS =-30 V, VGS =0 V
VGS = ±16 V, VDS=0 V
-30
VGS(TH)
VDS =-10V, ID =-1mA
VGS =-10 V, ID =-3 A
VGS =-4.5 V, ID =-3 A
VGS =-4.0 V, ID =-3 A
-1.0
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS =-10 V, VGS =0 V, f=1.0MHz
VDD=-15V, VGS=-10 V
ID=-3 A , RG=10 Ω,
VDD =-24 V, VGS =-10 V, ID =-6 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
43
58
65
-10
±10
V
µA
µA
-2.5
60
80
110
V
mΩ
mΩ
mΩ
460
130
77
pF
pF
pF
8.5
4.8
42
19
11
1.7
3.3
ns
ns
ns
ns
nC
nC
nC
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QW-R502-339.C
UP2790

Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS = -6A, VGS =0V (Note)
Diode Continuous Forward Current
IS
Diode Pulse Current
ISM
Note: Pulsed
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
0.92
-6
-24
V
A
A
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QW-R502-339.C
UP2790
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-339.C
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