Datasheet

UNISONIC TECHNOLOGIES CO., LTD
PZT5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
„
FEATURES
* High Collector-Emitter Voltage:
VCEO=160V
* High current gain
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
PZT5551L-x-AA3-R
PZT5551G-x-AA3-R
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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PZT5551
„
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PC
2
W
Operating Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
„
SYMBOL
θJA
RATINGS
62.5
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=100μA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=10μA, IC=0
Collector Cut-off Current
ICBO
VCB=120V, IE=0
Emitter Cut-off Current
IEBO
VBE=4V, IC=0
VCE=5V, IC=1mA
DC Current Gain (Note)
hFE
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT
VCE=10V, IC=10mA, f=100MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
Noise Figure
NF
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty Cycle<2%
„
UNIT
°C/W
MIN
180
160
6
TYP
MAX
50
50
80
80
80
100
160
UNIT
V
V
V
nA
nA
400
0.15
0.2
1
1
300
6.0
MHz
pF
8
dB
V
V
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
150-240
C
200-400
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Current Gain-Bandwidth Product, fT (MHz)
Saturation Voltage (V)
Collector Current, IC (mA)
DC Current Gain, hFE
Capacitance, COB (pF)
PZT5551
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
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PZT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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