2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (−120V, −50mA) 2SA1579 / 2SA1514K / 2SA1038S zExternal dimensions (Unit : mm) 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 2SA1579 1.25 0~0.1 0.15 0.2 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 (1) Emitter (2) Base (3) Collector 0.95 0.95 1.9 2.9 (2) (3) 0.4 (1) 2SA1514K 1.6 0 to 0.1 0.3Min. Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 2SA1038S 1.1 0.8 0.15 2.8 (1) Emitter (2) Base (3) Collector 2 3Min. 3 4 (15Min.) zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 0.45 2.5 0.5 0.45 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 Taping specifications (1) Emitter (2) Collector (3) Base Rev.A 1/3 2SA1579 / 2SA1514K / 2SA1038S Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SA1579 / 2SA1514K dissipation 2SA1038S Limits −120 −120 −5 −50 0.2 0.3 150 −55 to +150 PC Tj Tstg Junction temperature Storage temperature Unit V V V mA W °C °C zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗Denotes hFE 2SA1579 UMT3 RS 2SA1514K SMT3 RS R∗ T106 3000 R∗ T146 3000 2SA1038S SPT RS − TP 5000 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −120 − − V Collector-emitter breakdown voltage BVCEO −120 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA Collector cutoff current ICBO − − −0.5 µA VCB= −100V Emitter cutoff current IEBO − − −0.5 µA VEB= −4V VCE(sat) − − −0.5 V IC/IB= −10mA/−1mA hFE 180 − 560 − Transition frequency fT − 140 − MHz Output capacitance Cob − 3.2 − pF Collector-emitter saturation voltage DC current transfer ratio Conditions IC= −50µA VCE= −6V, IC= −2mA VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz Rev.A 2/3 2SA1579 / 2SA1514K / 2SA1038S Transistors zElectrical characteristic curves −50 Ta=25°C −8 −20.0 −17.5 −6 −15.0 −12.5 −4 −10.0 −2 −5.0 −7.5 −2.5µA IB=0 −4 −8 −12 −16 −20 −10 −5 −2 −1 −0.5 −0.1 −0.2 −0.4 0 20/1 10/1 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE : Cib (pF) 20 100 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −0.2 500 200 100 50 1 2 5 10 20 −1 −2 −5 −10 −20 −50 Fig.3 DC current gain vs. collector current Ta=25°C VCE= −6V 0.5 −0.5 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHZ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=50/1 200 BASE TO EMITTER VOLTAGE : VBE (V) Ta=25°C −0.1 −5V VCE= −1V 50 Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics −0.2 500 −0.2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −0.5 Ta=25°C −20 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) −22.5 0 Ta=25°C VCE= −6V −25.0 V −3 COLLECTOR CURRENT : IC (mA) −10 50 20 Ta=25°C f=1MHZ IE=0A 10 Cob 5 2 1 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.5 Transition frequency vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage Ta=25°C f=1MHZ IC=0A Cib 10 5 2 1 −0.5 −1 −2 −5 −10 −20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1