UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS . DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. 1 FEATURES TO-126 * Triple diffused technology. * High switching speed *Pb-free plating product number: 4126L PIN CONFIGURATION PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter ORDERING INFORMATION Order Number Normal Lead free 4126-T60-T 4126L-T60-T Package Packing TO-126 Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD 1 QW-R204-021,B 4126 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 400 200 7 3 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Emitter Maintenance Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) Collector-Emitter Saturation Voltage VCE (sat) Base-Emitter Saturation Voltage Fall Time Storage Time Feature Frequency VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 MIN 200 V IC=1mA, IB=0 IE=1mA, IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=7V, Ic=0 VCE=10V, Ic=0.5A VCE=5V, Ic=3A IC=0.5A, IB=0.1A IC=2A, IB=0.5A IC=1A, IB=0.25A IC=1A, IB1= -IB2 = 0.2A IC=1A, IB1= -IB2 = 0.2A VCE=10V, Ic=0.1A 400 7 V V µA µA µA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 5 4 TYP MAX 100 100 100 60 40 0.5 1.5 1.2 0.7 4 UNIT V V V µs µs MHz 2 QW-R204-021,B 4126 NPN EPITAXIAL SILICON TRANSISTOR ■ TYPICAL CHARACTERICS Safe work area Pc∝TJ 10 120 100 1 Is/s % IC (A) 80 0.1 60 40 Ptot 20 0.01 0 VCC (V) TJ (℃) hFE - Ic hFE - Ic 100 100 VCC=1.5V TJ=125℃ TJ=25℃ 10 hFE hFE TJ=125℃ VCC=5V 1 TJ=25℃ 10 1 0.001 0.01 0.1 1 10 0.001 0.01 VCE (sat) (V) - Ic 10 0.1 1 10 Ic (A) Ic (A) VBE (sat) (V) - Ic 1.2 hFE=5 hFE=5 1.1 Vbe(sat) (V) Vce(sat) (V) 1 1 TJ=125℃ TJ=25℃ 0.9 TJ=25℃ 0.8 TJ=125℃ 0.7 0.1 0.6 0.5 0.01 0.4 0.1 1 10 Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 1 Ic (A) 10 3 QW-R204-021,B 4126 NPN EPITAXIAL SILICON TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R204-021,B