SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Tj = 25 °C - - -50 V -20 - 20 V - - -170 mA - 4.5 7.5 Per transistor VDS drain-source voltage VGS gate-source voltage drain current ID VGS = -10 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = -10 V; ID = -100 mA; Tj = 25 °C Ω Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source 1 2 G1 gate 1 3 D2 drain 2 4 S2 source 2 5 G2 gate 2 6 D1 drain 1 Simplified outline 6 Graphic symbol 5 D1 4 D2 G1 1 2 G2 3 SOT666 (SOT666) S1 S2 sym147 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKV SOT666 plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code[1] BSS84AKV EG [1] % = placeholder for manufacturing site code BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -50 V Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current total power dissipation Ptot 20 V [1] - -170 mA VGS = -10 V; Tamb = 100 °C [1] - -110 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 VGS = -10 V; Tamb = 25 °C Tamb = 25 °C - -0.7 A [2] - 330 mW [1] - 390 mW - 1090 mW Tsp = 25 °C Per device Tamb = 25 °C [2] Ptot total power dissipation - 500 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - -170 mA HBM [3] - 1000 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 001aao121 120 001aao122 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2. -25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature 001aao140 -1 ID (A) (1) -10-1 (2) (3) (4) -10-2 (5) -10-3 -10-1 -1 -10 VDS (V) -102 IDM is single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 250 K/W [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W Per device Rth(j-a) Per transistor Rth(j-a) thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -10 µA; VGS = 0 V; Tj = 25 °C -50 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1.1 -1.6 -2.1 V IDSS drain leakage current VDS = -50 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -50 V; VGS = 0 V; Tj = 150 °C - - -2 µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -10 V; ID = -100 mA; Tj = 25 °C - 4.5 7.5 Ω RDSon gfs drain-source on-state resistance forward transconductance VGS = -10 V; ID = -100 mA; Tj = 150 °C - 8 13.5 Ω VGS = -5 V; ID = -100 mA; Tj = 25 °C - 5.7 8.5 Ω VDS = -10 V; ID = -100 mA; Tj = 25 °C - 150 - mS VDS = -25 V; ID = -200 mA; VGS = -5 V; Tj = 25 °C - 0.26 0.35 nC - 0.12 - nC - 0.09 - nC Dynamic characteristics (per transistor) QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C - 24 36 pF - 4.5 - pF - 1.3 - pF - 13 26 ns - 11 - ns turn-off delay time - 48 96 ns fall time - 25 - ns -0.48 -0.85 -1.2 V Source-drain diode (per transistor) VSD source-drain voltage BSS84AKV Product data sheet IS = -115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 001aao124 -0.20 001aao125 -10-3 VGS = -10 V -4.0 V -3.5 V ID (A) ID (A) -0.15 (3) (2) (1) -10-4 -3.0 V -0.10 -10-5 -2.5 V -0.05 0 0 -1 -2 -3 VDS (V) -4 -10-6 Tj = 25 °C 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics; drain current as a function of drain-source voltage; typical values Fig 7. 001aao126 12 (1) (2) Sub-threshold drain current as a function of gate-source voltage 001aao127 14 (3) RDSon (Ω) RDSon (Ω) 8 10 (4) (1) (5) 4 6 (2) 0 0 -0.1 -0.2 -0.3 ID (A) 2 -0.4 0 -2 Tj = 25 °C ID = -200 mA (1) VGS = -3.0 V (1) Tj = 150 °C (2) VGS = -3.5 V (2) Tj = 25 °C -4 -6 -8 -10 VGS (V) (3) VGS = -4.0 V (4) VGS = -5.0 V (5) VGS = -10.0 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values BSS84AKV Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 001aao128 -0.20 ID (A) 001aao129 2.0 a (1) (2) -0.15 1.5 -0.10 1.0 -0.05 0.5 (2) (1) 0 0 -1 -2 -3 VGS (V) 0 -60 -4 0 60 120 Tj (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao130 -3 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 001aao131 102 VGS(th) (V) C (pF) -2 (1) (1) (2) (2) -1 10 (3) (3) 0 -60 0 60 120 Tj (°C) 180 1 -10-1 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz, VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature BSS84AKV Product data sheet -10 VDS (V) -102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 001aao132 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 QGS2 QGS -2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 QG (nC) 0.6 ID = -0.2 A; VDS = -25 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao133 -0.3 IS (A) -0.2 -0.1 (1) 0 0 -0.4 (2) -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 11 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 18. Package outline SOT666 (SOT666) BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 19. Reflow soldering footprint for SOT666 (SOT666) BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS84AKV v.1 20110519 Product data sheet - - BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 15 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BSS84AKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 May 2011 © NXP B.V. 2011. All rights reserved. 16 of 17 BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11 Quality information . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .14 Legal information. . . . . . . . . . . . . . . . . . . . . . . .15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Contact information. . . . . . . . . . . . . . . . . . . . . .16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 May 2011 Document identifier: BSS84AKV