Data Sheet

SO
T6
66
NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 ESD protection up to 2 kV (N-channel)
and 1 kV (P-channel)
 Trench MOSFET technology
 AEC-Q101 qualified
1.3 Applications
 Level shifter
 Load switch
 Power supply converter
 Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
Tj = 25 °C
-
-
-50
V
-20
-
20
V
-
-
-170 mA
-
-
60
V
-20
-
20
V
-
-
330
mA
-
1
1.6
Ω
-
4.5
7.5
Ω
TR2 (P-channel)
VDS
drain-source voltage
VGS
gate-source voltage
drain current
ID
VGS = -10 V; Tamb = 25 °C
[1]
TR1 (N-channel)
VDS
drain-source voltage
VGS
gate-source voltage
drain current
ID
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
[1]
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA;
pulsed; tp ≤ 300 µs;
δ ≤ 0.01 ; Tj = 25 °C
TR2 (P-channel), Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = -10 V; ID = -100 mA;
Tj = 25 °C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
Simplified outline
6
5
Graphic symbol
D1
4
D2
G1
1
2
G2
3
SOT666 (SOT666)
S1
S2
017aaa262
3. Ordering information
Table 3.
Ordering information
Type number
NX1029X
Package
Name
Description
Version
SOT666
plastic surface-mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
NX1029X
AD
[1]
% = placeholder for manufacturing site code.
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
2 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tj = 25 °C
-
-50
V
TR2 (P-channel)
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
total power dissipation
Ptot
20
V
[1]
-
-170
mA
VGS = -10 V; Tamb = 100 °C
[1]
-
-110
mA
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-20
VGS = -10 V; Tamb = 25 °C
Tamb = 25 °C
-
-0.7
A
[2]
-
330
mW
[1]
-
390
mW
-
1090
mW
Tsp = 25 °C
TR1 (N-channel)
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Tj = 25 °C
-
60
V
-20
20
V
VGS = 10 V; Tamb = 25 °C
[1]
-
330
mA
VGS = 10 V; Tamb = 100 °C
[1]
-
210
mA
-
1.2
A
[2]
-
330
mW
[1]
-
390
mW
-
1090
mW
-
500
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Per device
Tamb = 25 °C
[2]
Ptot
total power dissipation
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
TR1 (N-channel), Source-drain diode
source current
IS
Tamb = 25 °C
[2][1]
-
330
mA
Tamb = 25 °C
[1]
-
-170
mA
HBM
[3]
-
2000
V
HBM
[3]
-
1000
V
TR2 (P-channel), Source-drain diode
source current
IS
TR1 N-channel), ESD maximum rating
VESD
electrostatic discharge voltage
TR2 (P-channel), ESD maximum rating
VESD
electrostatic discharge voltage
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[3]
Measured between all pins.
NX1029X
Product data sheet
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Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
3 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
001aao121
120
Pder
(%)
001aao122
120
Ider
(%)
80
80
40
40
0
-75
Fig 1.
-25
25
75
125
Tj (°C)
0
-75
175
Normalized total power dissipation as a
function of junction temperature
Fig 2.
-25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
017aaa059
10
ID
(A)
Limit RDSon = VDS/ID
1
(1)
(2)
10−1
(3)
(4)
(5)
10−2
(6)
10−3
10−1
1
102
10
VDS (V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3.
Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
NX1029X
Product data sheet
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Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
4 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
001aao140
-1
ID
(A)
(1)
-10-1
(2)
(3)
(4)
-10-2
(5)
-10-3
-10-1
-1
-10
-102
VDS (V)
IDM is single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4.
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to ambient
in free air
in free air
Min
Typ
Max
Unit
[1]
-
-
250
K/W
[1]
-
330
380
K/W
[2]
-
280
320
K/W
-
-
115
K/W
[1]
-
330
380
K/W
[2]
-
280
320
K/W
-
-
115
K/W
Per device
Rth(j-a)
TR1 (N-channel)
Rth(j-a)
Rth(j-sp)
thermal resistance from junction to ambient
thermal resistance from junction to solder
point
TR2 (P-channel)
Rth(j-a)
Rth(j-sp)
thermal resistance from junction to ambient
in free air
thermal resistance from junction to solder
point
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
5 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
017aaa064
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 5.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa065
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.25
0.33
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 6.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
6 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
017aaa064
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 7.
TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa065
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.25
0.33
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 8.
TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
7 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR2 (P-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C
-50
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-1.1
-1.6
-2.1
V
IDSS
drain leakage current
VDS = -50 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -50 V; VGS = 0 V; Tj = 150 °C
-
-
-2
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = -10 V; ID = -100 mA; Tj = 25 °C
-
4.5
7.5
Ω
RDSon
gfs
drain-source on-state
resistance
transfer conductance
VGS = -10 V; ID = -100 mA; Tj = 150 °C
-
8
13.5
Ω
VGS = -5 V; ID = -100 mA; Tj = 25 °C
-
5.1
8.5
Ω
VDS = -10 V; ID = -100 mA; Tj = 25 °C
-
150
-
mS
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 10 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1.1
1.6
2.1
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 60 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = 10 V; ID = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
-
1
1.6
Ω
VGS = 10 V; ID = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C
-
2.25
3.6
Ω
VGS = 5 V; ID = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
-
1.3
2
Ω
VDS = 10 V; ID = 100 mA; Tj = 25 °C
-
550
-
mS
-
0.26
0.35
nC
-
0.12
-
nC
-
0.09
-
nC
-
24
36
pF
-
4.5
-
pF
-
1.3
-
pF
-
13
26
ns
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
transfer conductance
TR2 (P-channel), Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
VDS = -25 V; ID = -180 mA; VGS = -5 V;
Tj = 25 °C
VDS = -25 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -30 V; RL = 250 Ω; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
tr
rise time
-
11
-
ns
td(off)
turn-off delay time
-
48
96
ns
tf
fall time
-
25
-
ns
NX1029X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
8 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Table 7.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS = 30 V; ID = 300 mA; VGS = 4.5 V;
Tj = 25 °C
-
0.5
0.6
nC
-
0.2
-
nC
-
0.1
-
nC
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
33
50
pF
-
7
-
pF
-
4
-
pF
-
5
10
ns
-
6
-
ns
TR1 (N-channel), Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
12
24
ns
tf
fall time
-
7
-
ns
-0.48
-0.85
-1.2
V
0.47
0.75
1.1
V
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
TR2 (P-channel), Source-drain diode characteristics
source-drain voltage
VSD
IS = -115 mA; VGS = 0 V; Tj = 25 °C
TR1 (N-channel), Source-drain diode characteristics
source-drain voltage
VSD
0.7
VGS = 4.0 V
ID
(A)
0.6
IS = 115 mA; VGS = 0 V; Tj = 25 °C
017aaa039
017aaa040
10−3
3.5 V
ID
(A)
3.25 V
0.5
10−4
(1)
0.4
(2)
(3)
3.0 V
0.3
10−5
2.75 V
0.2
2.5 V
0.1
0.0
0.0
1.0
2.0
3.0
4.0
10−6
0.0
1.0
VDS (V)
2.0
3.0
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 9.
TR1: Output characteristics: drain current as a
function of drain-source voltage; typical values
NX1029X
Product data sheet
Fig 10. TR1: Sub-threshold drain current as a function
of gate-source voltage
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
9 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
017aaa041
6.0
RDSon
(Ω)
017aaa042
6.0
RDSon
(Ω)
(1)
4.0
4.0
(2)
(3)
2.0
(1)
2.0
(4)
(2)
(5)
0.0
0.0
0.2
0.4
0.6
0.8
0.0
0.0
1.0
2.0
4.0
6.0
ID (A)
8.0
10.0
VGS (V)
Tj = 25 °C
ID = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.01
(1) VGS = 3.25 V
(1) Tj = 150 °C
(2) VGS = 3.5 V
(2) Tj = 25 °C
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 11. TR1: Drain-source on-state resistance as a
function of drain current; typical values
Fig 12. TR1: Drain-source on-state resistance as a
function of gate-source voltage; typical values
017aaa043
1.0
ID
(A)
017aaa298
2.4
a
0.8
(1)
1.8
(2)
0.6
1.2
0.4
0.6
0.2
0.0
0.0
1.0
2.0
3.0
4.0
5.0
VGS (V)
0.0
–60
0
60
120
Tj (°C)
180
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 13. TR1: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
NX1029X
Product data sheet
Fig 14. TR1: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
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Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
10 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
017aaa299
3.0
VGS(th)
(V)
017aaa046
102
(1)
C
(pF)
(1)
2.0
(2)
(2)
10
(3)
(3)
1.0
0.0
–60
0
60
120
Tj (°C)
180
1
10−1
1
VDS (V)
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 15. TR1: Gate-source threshold voltage as a
function of junction temperature
102
10
Fig 16. TR1: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
017aaa047
5.0
VGS
(V)
VDS
4.0
ID
3.0
VGS(pl)
VGS(th)
2.0
VGS
QGS1
1.0
QGS2
QGS
0.0
0.0
0.2
0.4
0.6
QGD
QG(tot)
003aaa508
0.8
QG (nC)
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 17. TR1: Gate-source voltage as a function of gate
charge; typical values
NX1029X
Product data sheet
Fig 18. Gate charge waveform definitions
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Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
11 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
017aaa048
1.2
001aao124
-0.20
VGS = -10 V -4.0 V -3.5 V
ID
(A)
IS
(A)
-0.15
0.8
(1)
-3.0 V
(2)
-0.10
0.4
-2.5 V
-0.05
0.0
0.0
0.4
0.8
1.2
0
VSD (V)
0
-1
-2
-3
VDS (V)
-4
Tj = 25 °C
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 19. TR1: Source current as a function of
source-drain voltage; typical values
Fig 20. TR2: Output characteristics: drain current as a
function of drain-source voltage; typical values
001aao125
-10-3
001aao126
12
(1)
ID
(A)
(2)
(3)
RDSon
(Ω)
(2)
(1)
-10-4
(3)
8
(4)
(5)
-10-5
-10-6
4
0
-0.5
-1.0
-1.5
-2.0
-2.5
VGS (V)
0
0
-0.1
-0.2
-0.3
ID (A)
-0.4
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
(1) minimum values
(1) VGS = -3.0 V
(2) typical values
(2) VGS = -3.5 V
(3) maximum values
(3) VGS = -4.0 V
(4) VGS = -5.0 V
(5) VGS = -10.0 V
Fig 21. TR2: Sub-threshold drain current as a function
of gate-source voltage
NX1029X
Product data sheet
Fig 22. TR2: Drain-source on-state resistance as a
function of drain current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
12 of 20
NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
001aao127
14
001aao128
-0.20
ID
(A)
RDSon
(Ω)
(1)
(2)
-0.15
10
(1)
-0.10
6
(2)
-0.05
(2)
(1)
2
0
-2
-4
-6
-8
0
-10
VGS (V)
0
-1
-2
ID = -200 mA
VDS > ID x RDSon
(1) Tj = 150 °C
(1) Tj = 25 °C
(2) Tj = 25 °C
(2) Tj = 150 °C
Fig 23. TR2: Drain-source on-state resistance as a
function of gate-source voltage; typical values
001aao130
-3
VGS(th)
(V)
VGS (V)
-4
Fig 24. TR2: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
001aao131
102
C
(pF)
-2
-3
(1)
(1)
(2)
(2)
-1
10
(3)
(3)
0
-60
0
60
120
Tj (°C)
180
1
-10-1
-1
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 25. TR2: Gate-source threshold voltage as a
function of junction temperature
NX1029X
Product data sheet
-10
VDS (V)
-102
Fig 26. TR2: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
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60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
001aao132
-10
001aao133
-0.3
VGS
(V)
IS
(A)
-8
-0.2
-6
-4
-0.1
(1)
(2)
-2
0
0
0.2
0.4
QG (nC)
0
0.6
ID = -180 mA; VDS = -25 V; Tamb = 25 °C
0
-0.4
-0.8
VSD (V)
-1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 27. TR2: Gate-source voltage as a function of gate
charge; typical values
Fig 28. TR2: Source current as a function of
source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 29. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NX1029X
Product data sheet
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60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SOT666
Fig 30. Package outline SOT666 (SOT666)
NX1029X
Product data sheet
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Rev. 1 — 12 August 2011
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60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
10. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×) 0.25
(2×)
0.538
2
1.7 1.075
0.3
(2×)
0.55
(2×)
placement area
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig 31. Reflow soldering footprint for SOT666 (SOT666)
NX1029X
Product data sheet
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Rev. 1 — 12 August 2011
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11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX1029X v.1
20110812
Product data sheet
-
-
NX1029X
Product data sheet
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12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
NX1029X
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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NX1029X
NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NX1029X
Product data sheet
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Rev. 1 — 12 August 2011
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NXP Semiconductors
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Test information . . . . . . . . . . . . . . . . . . . . . . . . .14
Quality information . . . . . . . . . . . . . . . . . . . . . .14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .15
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .17
Legal information. . . . . . . . . . . . . . . . . . . . . . . .18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Contact information. . . . . . . . . . . . . . . . . . . . . .19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 August 2011
Document identifier: NX1029X