Data Sheet

2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009
Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
n
n
n
n
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 3 kV
1.3 Applications
n
n
n
n
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Min
Typ
Max
Unit
VDS
drain-source voltage
-
-
60
V
ID
drain current
-
-
300
mA
IDM
peak drain current
single pulse;
tp ≤ 10 µs
-
-
1.2
A
RDSon
drain-source on-state
resistance
VGS = 10 V;
ID = 500 mA
-
1.1
1.6
Ω
Conditions
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
1
2
G
S
017aaa000
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
2N7002CK
Description
Version
TO-236AB plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
2N7002CK
LP*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
2 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
60
V
VGS
gate-source voltage
-
±20
V
ID
drain current
Tamb = 25 °C
-
300
mA
Tamb = 100 °C
-
190
mA
VGS = 10 V
IDM
peak drain current
Tamb = 25 °C; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
[1]
-
1.2
A
-
350
mW
150
°C
−55
+150
°C
−65
+150
°C
Source-drain diode
IS
source current
Tamb = 25 °C
-
200
mA
ISM
peak source current
Tamb = 25 °C; tp ≤ 10 µs
-
1.2
A
all pins;
human body model;
C = 100 pF;
R = 1.5 kΩ
-
3
kV
ElectroStatic Discharge (ESD)
electrostatic discharge
voltage
VESD
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
017aaa001
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
−25
25
75
0
−75
125
175
Tamb (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 1.
017aaa002
120
25
75
125
175
Tamb (°C)
ID
I der = -------------------- × 100 %
I D ( 25°C )
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
2N7002CK_1
Product data sheet
−25
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
3 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa003
10
Limit RDSon = VDS/ID
ID
(A)
tp = 10 µs
1
100 µs
10−1
1 ms
DC
10 ms
100 ms
10−2
10−1
1
102
10
VDS (V)
Tsp = 25 °C; IDM = single pulse; VGS = 10 V
Fig 3.
Safe operating area; junction to solder point; continuous and peak drain currents as a function of
drain-source voltage
017aaa004
10
ID
(A)
Limit RDSon = VDS/ID
tp = 10 µs
1
100 µs
10−1
1 ms
10 ms
DC
100 ms
10−2
10−3
10−1
1
102
10
VDS (V)
Tamb = 25 °C; IDM = single pulse; VGS = 10 V
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
2N7002CK_1
Product data sheet
[1]
Min
Typ
Max
Unit
-
350
500
K/W
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
4 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
Table 6.
Thermal characteristics …continued
Symbol
Parameter
Rth(j-sp)
thermal resistance from
junction to solder point
[1]
Conditions
Min
Typ
Max
Unit
-
-
150
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
60
-
-
V
55
-
-
V
1
1.75
2.5
V
-
-
100
nA
Static characteristics
V(BR)DSS
drain-source breakdown ID = 10 µA; VGS = 0 V
voltage
Tj = 25 °C
Tj = −55 °C
VGS(th)
gate-source threshold
voltage
ID = 250 µA; VDS = VGS;
Tj = 25 °C
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
-
-
1
µA
VGS = ±20 V; VDS = 0 V
-
-
5
µA
VGS = ±10 V; VDS = 0 V
-
50
450
nA
VGS = ±5 V; VDS = 0 V
-
-
100
nA
Tj = 25 °C
-
1.3
3
Ω
Tj = 150 °C
-
2.8
4.4
Ω
VGS = 10 V; ID = 500 mA
-
1.1
1.6
Ω
ID = 200 mA;
VDS = 10 V;
VGS = 4.5 V
-
1.09
1.3
nC
-
0.22
-
nC
-
0.23
-
nC
VGS = 0 V; VDS = 25 V;
f = 1 MHz
-
47.2
55
pF
-
11
20
pF
-
5
7.5
pF
-
8
15
ns
-
8
15
ns
-
38
50
ns
-
22
35
ns
0.47
0.79
1.1
V
VGS = 4.5 V;
ID = 200 mA
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
VDS = 15 V;
RL = 15 Ω;
VGS = 10 V;
RG = 6 Ω
Source-drain diode
VSD
source-drain voltage
IS = 200 mA; VGS = 0 V
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
5 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa005
1.0
(1)
ID
(A)
017aaa006
10−3
(3)
(2)
ID
(A)
(4)
0.8
10−4
0.6
(1)
(3)
(2)
(5)
0.4
10−5
0.2
10−6
0.0
0
1
2
3
4
0
1
2
VDS (V)
3
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) VGS = 10 V
(1) minimum values
(2) VGS = 5 V
(2) typical values
(3) VGS = 4.5 V
(3) maximum values
(4) VGS = 4 V
(5) VGS = 3.5 V
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 6.
017aaa007
2.5
RDSon
(Ω)
Sub-threshold drain current as a function of
gate-source voltage
017aaa008
4
RDSon
(Ω)
(1)
2.0
3
(1)
(2)
1.5
2
(3)
(2)
(4)
1.0
(3)
1
0.5
0.0
0
0.2
0.4
0.6
0.8
1.0
0
2
ID (A)
Tj = 25 °C
4
6
8
10
VGS (V)
ID = 500 mA
(1) VGS = 4 V
(1) Tj = 150 °C
(2) VGS = 4.5 V
(2) Tj = 25 °C
(3) VGS = 5 V
(3) Tj = −55 °C
(4) VGS = 10 V
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 8.
Drain-source on-resistance as a function of
gate-source voltage; typical values
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
6 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa009
2.4
017aaa010
3
a
VGS(th)
(V)
(1)
1.8
2
(2)
1.2
(3)
1
0.6
0.0
−60
0
60
120
0
−60
180
0
60
Tj (°C)
120
180
Tj (°C)
ID = 0.25 mA; VDS = VGS
R DSon
a = ----------------------------R DSon ( 25°C )
(1) maximum values
(2) typical values
(3) minimum values
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Gate-source threshold voltage as a function of
junction temperature
017aaa011
102
(1)
C
(pF)
(2)
(3)
10
1
10−1
1
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
(1) Ciss
(2) Coss
(3) Crss
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
7 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa012
10
VGS
(V)
017aaa013
1.0
IS
(A)
8
0.8
6
0.6
4
0.4
2
0.2
0
0.0
0.4
0.8
1.2
(1)
0.0
0.2
0.4
QG (nC)
ID = 200 mA; VDD = 30 V; Tj = 25 °C
0.6
(2)
0.8
(3)
1.0
1.2
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
(3) Tj = −55 °C
Fig 12. Gate-source voltage as a function of gate
charge; typical values
Fig 13. Source current as a function of source-drain
voltage; typical values
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
8 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 14. Package outline SOT23 (TO-236AB)
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
9 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
9. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 15. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 16. Wave soldering footprint SOT23 (TO-236AB)
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
10 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2N7002CK_1
20090911
Product data sheet
-
-
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
11 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
2N7002CK_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 September 2009
12 of 13
2N7002CK
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 September 2009
Document identifier: 2N7002CK_1
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