Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5302
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR
„
DESCRIPTION
The UTC 5302 is a NPN silicon planar transistor and suited to
be used in power amplifier applications.
„
1
TO-251
FEATURES
* Makes efficient anti-saturation operation
* Low variable storage-time spread
* Low base drive
* Very suitable for half bridge light ballast application
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5302L-TM3-T
5302G-TM3-T
Note: Pin Assignment: B: Base C: Collector E: Emitter
5302L-TM3-T
Package
TO-251
Pin Assignment
1
2
3
B
C
E
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TM3: TO-251
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Packing
Tube
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5302
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
2
A
Collector Peak Current (tp<5ms)
4
A
ICM
Base Current
IB
1
A
Base Peak Current (tp<5ms)
2
A
IBM
25
W
Power Dissipation (TC≤25°С)
PD
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
100
5
UNIT
°С/W
°С/W
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NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta = 25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT1)
VCE(SAT2)
VBE(SAT1)
VBE(SAT2)
SWITCHING CHARACTERISTICS
Turn On Time
tON
Fall Time
tF
Storage Time
tSTG
Note: Pulsed duration = 300μS, Duty cycle≤2%
TEST CONDITIONS
IC=10mA, IE=0 (Note)
IC=1mA, IB=0
IE=1mA, IC=0
VCB=800V, IE=0
VEB=9V, IC=0
400
800
10
VCE=5V, IC=10mA
VCE=5V, IC=400mA
VCE=5V, IC=1A
IC=0.5A, IB=0.1A (Note)
IC=1A, IB=0.25A (Note)
IC=0.5A, IB=0.1A (Note)
IC=1A, IB=0.25A (Note)
10
10
5
VCC=250V, IC=1A,
IB1=IB2=0.2A, tP=25uS
Duty Cycle<1%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
1
1
V
V
V
μA
μA
30
1.1
0.15
0.2
0.5
0.5
1.5
1.1
1.2
0.3
0.4
0.9
V
V
μS
μS
μS
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
Collector Current VS. BVCEO
14
1400
1200
Collector Current , IC(µA)
Collector Current , IC(mA)
12
10
8
6
4
2
0
0
200 300
100
400 500 600
Collector-Emitter Breakdown Voltage ,BVCEO (V)
1000
800
600
400
200
0 0
400
200
600
800
1000
Collector-Base Breakdown Voltage ,BVCBO (V)
Emitter Current VS. BVEBO
140
Emitter Current , IE(µA)
Collector Current VS. BVCBO
120
100
80
60
40
20
0
0
2
4
6
8 10 12 14 16 18 20
Emitter-Base Breakdown Voltage ,BVEBO (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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