ROHM 2SB1275

Power Transistor (160V, 1.5A)
2SB1275 / 2SB1236A
Dimensions (Unit : mm)
Features
1) High breakdown voltage.(BVCEO = 160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency.(fT = 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
5.5
1.5
5.1
6.5
2.3
0.65
0.8Min.
C0.5
1.5
0.5
1.0
0.5
2.3
0.9
2.3
(3) (2) (1)
0.9
0.75
2SB1275
2.5
9.5
Absolute maximum ratings (Ta = 25C)
V
V
Emitter-base voltage
VEBO
−5
−1.5
−3
V
A(DC)
IC
Collector current
Collector
power
dissipation
A(Pulse)
1
2SB1275
6.8
2.5
W(Tc=25°C)
10
PC
2SB1236A
2SB1236A
∗1
W
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.65Max.
∗2
0.5
4.4
Unit
−160
−160
14.5
Limits
VCBO
VCEO
1.0
Parameter
0.9
Symbol
Collector-base voltage
Collector-emitter voltage
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
(1) (2) (3)
2.54 2.54
∗ 1 Single pulse Pw=100ms
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
1.05
0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Packaging specifications and hFE
Type
2SB1275
2SB1236A
Package
hFE
CPT3
P
TL
2500
ATV
D
TV2
2500
Code
Basic ordering unit (pieces)
Electrical characteristics (Ta = 25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−160
−
−
V
IC = −50μA
Collector-emitter breakdown voltage
BVCEO
−160
−
−
V
IC = −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE = −50μA
Collector cutoff current
ICBO
−
−
−1
μA
VCB = −120V
Emitter cutoff current
IEBO
−
−
−1
μA
VEB = −4V
VCE(sat)
−
−
−2
V
82
−
180
−
100
−
200
−
fT
−
50
−
MHz
Cob
−
30
−
pF
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1275
2SB1236A
Transition frequency
Output capacitance
∗Measured using pulse current.
hFE
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c 2009 ROHM Co., Ltd. All rights reserved.
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Conditions
IC/IB = −1A/−0.1A
∗
VCE = −5V , IC = −0.1A
VCE = −5V , IE = 0.1A , f = 30MHz
VCB = −10V , IE =0A , f = 1MHz
2009.12 - Rev.B
2SB1275 / 2SB1236A
Data Sheet
Electrical characteristics curves
−10
Ta=25°C
−4mA
−3mA
−2mA
−1mA
IB= 0mA
0
−1
0
−2
−3
−4
−0.2
−0.1
−0.05
−0.02
−0.01
−5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE= −10V
DC CURRENT GAIN : hFE
25°C
100
−25°C
50
20
10
5
2
1
−0.01 −0.02
−0.05 −0.1 −0.2 −0.5
−1
−2
−5
−10
−10
−2
−1
−0.5
IC/IB=50
−0.2
−0.1
−0.05
200
100
50
20
10
5
2
1
1
2
5
10
20
50
100 200
10
−0.05 −0.1 −0.2 −0.5
−1
−2
−5
−10
Fig.5 Collector-emitter saturation voltage
vs. collector current
)
VCE= −5V
Ta=25°C
500
20
−0.02
−0.01
−0.01 −0.02
500 1000
EMITTER CURRENT : IE (mA)
Fig.7 Resistance raito vs. emmiter current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1000
f=1MHz
IE=0A
Ta=25°C
500
200
100
50
20
10
5
2
1
−0.1 −0.2
−0.5
−1
−2
−5
−10 −20
−50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance vs.
collector-base voltage
2/3
−0.05 −0.1 −0.2 −0.5
−1
−2
−5
−10
Fig.3 DC current gain vs. collector current ( )
−10
IC/IB=10
−5
−2
−1 Ta= −25°C
−0.5
−0.2
−0.1
−0.05
25°C
VBE(sat)
100°C
Ta=100°C
VCE(sat)
25°C
−25°C
−0.02
−0.01
−0.01 −0.02
COLLECTOR CURRENT : IC (A)
COLLECTOR OUTPUT CAPACITANCE: Cob (pF)
TRANSITION FREQUENCY : fT (MHz)
1000
5
COLLECTOR CURRENT : IC (A)
Ta=25°C
−5
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current (
−5V
10
1
−0.01 −0.02
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
Fig.2 Ground emitter propagation characteristics
500
Ta=100°C
20
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics
200
50
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
VCE= −10V
100
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE : VBE(sat) (V)
−0.2
−0.5
200
−0.05 −0.1 −0.2 −0.5
−1
−2
−5
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage
−10
−5
COLLECTOR CURRENT : IC (A)
−0.4
DC CURRENT GAIN : hFE
−6mA
−5mA
−1
−25°C
−0.6
−2
25°C
PC=1W
−10mA
−9mA
−8mA
−7mA
Ta=25°C
500
Ta=100
°C
−0.8
1000
VCE= −5V
−5
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
−1.0
Ic Max. (Pulse∗)
Pw=10ms∗
−2
−1
−0.5
100ms∗
−0.2
DC
−0.1
−0.05
−0.02
−0.01
−0.005 Ta=25°C
∗ Single
NONREPETITIVE
−0.002
PULSE
−0.001
−0.1 −0.2 −0.5 −1 −2 −5 −10
−20 −50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SB1236A)
2009.12 - Rev.B
2SB1275 / 2SB1236A
COLLECTOR CURRENT : IC (A)
−10
−5
Data Sheet
Ic Max. (Pulse∗)
Pw=10ms∗
−2
−1
−0.5
−0.2
100ms∗
DC
−0.1
−0.05
−0.02
−0.01
−0.005 Ta=25°C
∗ Single
NONREPETITIVE
−0.002
PULSE
−0.001
−0.1 −0.2 −0.5 −1 −2 −5 −10
−20 −50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (2SB1275)
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c 2009 ROHM Co., Ltd. All rights reserved.
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2009.12 - Rev.B
Notice
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