Datasheet

UNISONIC TECHNOLOGIES CO., LTD
PZTA92/93
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR

DESCRIPTION
The UTC PZTA92/93 are high voltage PNP transistors,
designed for telephone signal switching and for high voltage
amplifier.

FEATURES
* Collector-emitter voltage: VCEO=-300V (UTC PZTA92)
VCEO=-200V (UTC PZTA93)
* Complement to UTC PZTA42/43
* Collector power dissipation: PC(MAX)=1W


ORDERING INFORMATION
Ordering Number
Package
PZTA92G-AA3-R
PZTA93G-AA3-R
SOT-223
SOT-223
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
PZTA92
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
PZTA93
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PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
-300
V
Collector-Base Voltage
VCBO
-200
V
-300
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PZTA92
PZTA93
PZTA92
PZTA93

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
PZTA92
Collector-Base Breakdown Voltage
BVCBO IC=-100μA, IE=0
PZTA93
PZTA92
Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB=0
PZTA93
Emitter-Base Breakdown Voltage
BVEBO IE=-100μA, IC =0
VCB=-200V, IE=0
PZTA92
Collector Cut-Off Current
ICBO
VCB=-160V, IE=0
PZTA93
Emitter Cut-Off Current
IEBO
VEB=-3V, IC =0
VCE=-10V, IC =-1mA
DC Current Gain (Note)
hFE
VCE=-10V, IC =-10mA
VCE=-10V, IC =-30mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC =-20mA, IB=-2mA
Base-Emitter Saturation Voltage
VBE(SAT) IC =-20mA, IB=-2mA
Current Gain Bandwidth Product
fT
VCE=-20V,Ic=-10mA, f=100MHz
PZTA92
Collector Base Capacitance
CCB
VCB=-20V, IE=0, f=1MHz
PZTA93
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-300
-200
-300
-200
-5
TYP
MAX
-0.25
-0.25
-0.10
UNIT
V
V
V
V
V
μA
μA
μA
60
80
80
-0.5
-0.90
50
6
8
V
V
MHz
pF
pF
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
103
-104 I =10*I
C
B
VCE=-10V
Saturation Voltage
VCE(SAT)
102
-103
VBE(SAT)
-102
101
100
-100
1
-10
-10
2
3
-10
-10
4
-101
-100
Collector Current, IC (mA)
Capacitance
102
Active-Region Safe Operating Area
-101
-101
s
0.1m
101
CCB
ms
1.0
n
tio
ita
lim
al
m °C
er 25
Th T C=
-101
C
D
5W
1.
CIB
-104
-102
-103
-101
Collector Current, IC (mA)
MPSA93
MPSA92
625mW Thermal
limitation TA=25°C
bonding breakdown
limitation TJ=150°C
-1
-10
0
-10
-10
1
2
-10
Collector-Base Voltage, VCB (V)
103
-100 0
-10
-101
-102
-103
Collector-Emitter Voltage, VCE ( V)
Current Gain Bandwidth Product
VCE=-20V
f=100MHz
102
101 0
-10
-101
-102
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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