UNISONIC TECHNOLOGIES CO., LTD UP1855A PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR FEATURES 1 * High current switching * Low VCE(SAT) * High hFE SOT-223 1 TO-126 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP1855AG-x-AA3-R UP1855AL-x-T60-K UP1855AG-x-T60-K Note: Pin Assignment: E: Emitter B: Base C: Case Package SOT-223 TO-126 Pin Assignment 1 2 3 B C E E C B Packing Tape Reel Bulk MARKING SOT-223 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-126 1 of 4 QW-R207-020.F UP1855A PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Current (Pulse) Collector Current (DC) RATINGS UNIT -180 V -170 V -6 V -10 A -4 A SOT-223 1 Power Dissipation PD W TO-126 1 Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ICM IC ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC = -100µA Collector-Emitter Breakdown Voltage BVCEO IC = -10mA Emitter-Base Breakdown Voltage BVEBO IE = -100µA VCB=-150V Collector Cut-off Current ICBO VCB=-150V, Ta=100°C Emitter Cut-off Current IEBO VEB=-6V IC=-100mA, IB=-5mA IC=-500mA, IB=-50mA Collector-Emitter Saturation Voltage VCE (SAT) IC=-1A, IB=-100mA IC=-3A, IB=-300mA Base-Emitter Saturation Voltage VBE (SAT) IC=-3A, IB=-300mA Base-Emitter Turn-On Voltage VBE (ON) IC=-3A, VCE=-5V hFE1 IC=-10mA, VCE=-5V hFE2 IC=-1A, VCE=-5V DC Current Gain hFE3 IC=-3A, VCE=-5V hFE4 IC=-10A, VCE=-5V Transition Frequency fT IC=-100mA, VCE=-10V, f=50MHz Output Capacitance Cob VCB=-20V, f=1MHz tON IC=-1A, VCC=-50V Switching Times tOFF IB1=-100mA, IB2=100mA Note: Pulse test: tP ≤ 300µs, Duty cycle ≤2% MIN -180 -170 -6 100 100 28 TYP -210 MAX -8 -30 -70 -110 -275 -970 -830 200 -50 -1 -10 -60 -120 -150 -550 -1110 -950 UNIT V V V nA µA nA mV mV mV mV mV mV 300 140 10 110 40 68 1030 MHz pF ns ns CLASSIFICATION OF hFE3 RANK RANGE A 28~75 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 75(MIN.) 2 of 4 QW-R207-020.F www.unisonic.com.tw VCE(SAT) (V) Collector-Emitter Saturation Voltage VCE(SAT) (V) VBE(SAT) (V) Base-Emitter Turn-on Voltage, VBE(ON) (V) DC Current Gain, hFE Collector Current, Ic (A) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage UP1855A PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD QW-R207-020.F 3 of 4 UP1855A PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-020.F