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SiC POWER MODULES
Innovative Power Devices
for a Sustainable Future
Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances...
Power devices are a key component in power electronics products for contributing to the realization of a low-carbon
society. Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide
(SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy
savings for power electronics devices. Mitsubishi Electric began the development of elemental SiC technologies in
the early 1990s and has since introduced them to achieve practical energy-saving effects for products manufactured
using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon society and more affluent
lifestyles.
SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one.
Traction
• Size and weight of traction inverters reduced
• Regenerative performance enhanced
• Noise reduced
Home appliances
• Energy savings increased
• Cooling system more compact
• Equipment more compact/thinner
Industrial equipment
• High torque, high speed, size reduced
• Cooling system more compact
• Manufacturing productivity enhanced
Merits of Incorporating
SiC Power Modules
Electric/Hybrid vehicles
• Power loss reduced
• Cooling system more compact
• Regenerative power used efficiently
Renewable energies
• Energy conversion efficiency improved
• Passive components downsized
• Quieter high-speed operation
Building facilities
• Power loss reduced
• Greater layout freedom as the result of smaller equipment
1
SiC with superior characteristics
Si
n+
p
SiC
Gate
Source
n
-
Source
n+
Gate
Source
p
p
n+
SiC
Source
n+
nSiC substrate
3 times that of Si
1
10
Si substrate
Large reduction in
electrical resistance
Drain electrode
Si MOSFET structure
High temperature
Band gap Band gap is approx.
Drain electrode
SiC MOSFET structure
Current flow
Conduction band
p
Valence band
Power loss reduced
High-temperature operation
SiC has approximately 10 times the critical breakdown strength of silicon.
Furthermore, the drift layer that is a main cause of electrical resistance is
one-tenth of the thickness. This allows a large reduction in electrical
resistance and, in turn, reduces power loss. This SiC characteristic
enables dramatic reductions in conductivity loss and switching loss in
power devices.
When the temperature increases, electrons are exited to the conduction
band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of silicon, preventing
the flow of leakage current and enabling operation at high temperatures.
Si
SiC
Hybrid SiC power modules
Si
Turn-on switching waveform
SiC
High-speed
switching operation realized
Thermal
conductivity
rate is approx.
3 times
that of Si
Ic:500A/div
Vce:250V/div
t:1μs/div
High-speed switching operation
Heat dissipation
With SiC, owing to the high dielectric breakdown, power loss is reduced
and high-voltage is easier to achieve, it is possible to use Schottky
Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize
high-speed switching motion because they don't have accumulation
carriers. As a result, high-speed switching can be realized.
SiC has three times the heat conductivity of silicon, which improves heat
dissipation.
SiC power modules appropriated by application
Application
Product name
Hybrid SiC-IPM
Full SiC-IPM
Full SiC-IPM for PV Applications
Full SiC Power Modules
Industrial
equipment
Hybrid SiC Power Modules for
High-frequency Switching
Applications
Traction
Home
appliances
Large Hybrid SiC DIPIPMTM for PV Application
Hybrid SiC Power Modules
Super-mini Full SiC DIPIPMTM
Super-mini Hybrid SiC DIPPFCTM
Super-mini Full SiC DIPPFCTM
Model
PMH200CS1D060
PMH75CL1A120
PMF75CL1A120
PMF75B4L1A060
FMF400BX-24A
FMF800DX-24A
CMH100DY-24NFH
CMH150DY-24NFH
CMH200DU-24NFH
CMH300DU-24NFH
CMH400DU-24NFH
CMH600DU-24NFH
PSH50YA2A6
CMH1200DC-34S
PSF15S92F6
PSH20L91A6-A
PSF20L91A6-A
Rating
Voltages[V] Current[A]
Connection
States
600
200
6 in 1
1200
75
6 in 1
600
1200
1200
4 in 1
4 in 1
2 in 1
2 in 1
Commercially available
600
1700
600
75
400
800
100
150
200
300
400
600
50
1200
15
Commercially available
Sample available
Sample available
Sample available
Commercially available
Commercially available
4 in 1
2 in 1
6 in 1
600
20Arms
Interleaved
Commercially available
Commercially available
Commercially available
Commercially available
Commercially available
1200
Insert pages
P3
P4
P5
P6
P7
Terminology
SiC
Silicon Carbide
FWD-SW
Diode switching loss
DIPIPM
Dual-In-Line Package Intelligent Power Module
Tr-SW
Transistor switching loss
IPM
DIPPFC
SBD
MOSFET
IGBT
Tr
Intelligent Power Module
Dual-In-Line Package Power Factor Correction
Schottky Barrier Diode
Metal Oxide Semiconductor Field Effect Transistor
Insulated Gate Bipolar Transistor
Transistor
FWD-DC
Tr-DC
IGBT-SW
IGBT-DC
PV
CSTBT
Diode DC loss
Transistor DC loss
IGBT switching loss
IGBT DC loss
Photovoltaics
Mitsubishi Electric’s unique IGBT that makes
use of the carrier cumulative effect
2
600V/200A Hybrid SiC-IPM for Industrial Equipment
PMH200CS1D060 Commercially available
SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions
Power loss reduction of approx. 20% contributes to
enhancing the performance of industrial machinery
Features
• Hybrid combination of SiC-SBD and IGBT with current and temperature sensors
implemented for IPM supplies high functionality and low loss enabling high torque
and motor speed
• Recovery loss (Err) reduced by 95% compared to the conventional product*
• Package compatible with the conventional product* making replacement possible
* Conventional product: Mitsubishi Electric S1 Series PM200SC1D060
Internal circuit diagram
: SiC-SBD
FWD_SW
FWD_DC
Power loss comparison
IGBT_SW
IGBT_DC
P
V
20%
Power loss [W]
U
Approx.
W
reduction
Si-IPM
N
Hybrid SiC-IPM
Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1,
Three-phase modulation, Tj=125˚C
1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment
PMH75CL1A120/PMF75CL1A120 Sample available
Built-in drive circuit and protection functions realize high functionality
Features
Main specifications
• Incorporates SiC-MOSFET with current sensor and
built-in drive circuit and protection functions to
deliver high functionality
• Significant reduction in power loss compared to the
conventional product*
• Package compatible with the conventional product*
Rating
Mounted
Functions
1200V/75A 6in1
• Built-in drive circuit
• Under-voltage protection
• Short-circuit protection
• Over-temperature protection
(Monitoring IGBT chip surface)
* Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120
P
:SiC-MOSFET
Full SiC-IPM
SiC-MOSFET
with current sense terminal
Drain
U
V
W
Gate
Sense
N
3
:SiC-SBD
Source
FWD_SW
FWD_DC
Power loss comparison
Si-IPM
Hybrid SiC-IPM
Tr_SW
Tr_DC
Approx.
Approx.
reduction
reduction
25%
Power loss [W]
Internal circuit diagram
70%
Full SiC-IPM
Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9,
Modulation=1, Three-phase modulation, Tj=125˚C
600V/75A Full SiC-IPM for PV Applications
Sample available
PMF75B4L1A060
Improved power conversion efficiency
and high-frequency drive enable reactor size to be reduced
Features
Main specifications
• Incorporates SiC-MOSFET with current sensor, built-in
Rating
600V/75A 4-in-1
drive circuit and protection functions to deliver higher
• Built-in drive circuit
functionality
Functions
• Under-voltage protection
incorporated
• Power loss reduced approx. 50% compared to
• Short-circuit protection
conventional product*
• Improved power conversion efficiency and high-frequency
drive enable reactor size to be reduced
• Package compatible with conventional product* * Conventional product: Mitsubishi Electric IPM PM75B4LA060
Internal circuit diagram
:SiC-MOSFET
P
:SiC-SBD
Power loss comparison
FWD_SW
FWD_DC
Tr_SW
Tr_DC
SiC-MOSFET
with current sense terminal
U
V
Gate
Sense
Approx.
Power loss [W]
Drain
Source
50%
reduction
Si-IPM
Full SiC-IPM
Conditions : Vcc=300V, fc=20kHz, Io=27.5Arms, P.F=1, Modulation=1, Tj=125℃
N
1200V/400A・1200V/800A Full SiC Power Modules
for Industrial Equipment
FMF400BX-24A/FMF800DX-24A Commercially available
Contributes to reducing size/weight of industrial-use inverters
with the mounting area reduced by approx. 60%
Features
• Power loss reduced approx. 70% compared to the conventional product*
• Low-inductance package adopted to deliver full SiC performance
• Contributes to realizing smaller/lighter inverter equipment by significantly reducing
the package size and realizing a mounting area approx. 60% smaller compared to
the conventional product*
*Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs
Power loss comparison
Applications
Rated
voltage
Industrial
equipment
1200V
Reted
current
Circuit
configration
400A
4-in-1
800A
2-in-1
Comparison with
conventional
product package
Package size
(D ×W)
92.3 × 121.7mm
Si power module
1200V/400A(2-in-1) 2pcs
Approx.
60%
Footprint
reduction
Full SiC power module
1200V/400A(4-in-1) 1pcs
or
1200V/800A(2-in-1) 1pcs
FWD_SW
FWD_DC
Tr_SW
Tr_DC
1200V/800A Full SiC Power module
Power loss [W]
Product lineup
Approx.
70%
reduction
IGBT module(Si)
Full SiC module
Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8,
Modulation=1, Three-phase modulation, Tj=125˚C
4
Hybrid SiC Power Modules for High-frequency
Switching Applications Commercially available
For optimal operation of power electronics devices that conduct high-frequency switching
Features
• Power loss reduction of approx. 40%
contributes to higher efficiency, smaller
size and weight reduction of total system
• Suppresses surge voltage by reducing
internal inductance
• Package compatible with the conventional
product*
Product lineup
Industrial
equipment
* Conventional product: Mitsubishi Electric
NFH Series IGBT Modules
Rated
voltage
Model
Applications
Rated
current
Circuit
configuration
External size
(DxW)
CMH100DY-24NFH
100A
48 × 94mm
CMH150DY-24NFH
150A
48 × 94mm
CMH200DU-24NFH
200A
1200V
CMH300DU-24NFH
2-in-1
300A
62 × 108mm
62 × 108mm
CMH400DU-24NFH
400A
80 × 110mm
CMH600DU-24NFH
600A
80 × 110mm
Recovery waveform (FWD)
FWD_SW
FWD_DC
Power loss comparison
Approx.
40%
Power loss [W]
CM600DU-24NFH
(Si-IGBT)
IE:100A/div
CMH600DU-24NFH
(Hybrid SiC)
reduction
CM600DU-24NFH
(Si-IGBT)
200ns/div
Tr_SW
Tr_DC
CMH600DU-24NFH
(Hybrid SiC)
Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1,
Three-phase modulation, Tj=125˚C
600V/50A Large Hybrid SiC DIPIPMTM for PV Applications
PSH50YA2A6 Commercially available
More efficient power modules for PV power conditioner applications
Features
• Hybrid structure achieved with SiC Schottky barrier diode
and 7th-generation IGBT chips
• Power loss reduction of approx. 25% compared to the conventional product*
• Helps downsize PV inverter system thanks to modified short-circuit protection scheme
*Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99
Internal circuit diagram
:SiC-SBD
Power loss comparison
FWD_SW
FWD_DC
IGBT_SW
IGBT_DC
P
VWP1
VVPC
WP
VWPC
LVIC
LVIC
VP
V
W
VN1
VN
WN
FO
VNC
25%
reduction
LVIC
CFO
5
Approx.
Power Loss [W]
VVP1
CIN
VSC
N
W
N
V
Si DIPIPMTM
Hybrid SiC DIPIPMTM
Condition:Vcc=300V, Io=25Arms, P.F=0.8, fc=10kHz, Tj=125℃
1700V/1200A Hybrid SiC Power Modules for Traction Inverters
CMH1200DC-34S Commercially available
High-power/low-loss/highly reliable modules appropriate for use in traction inverters
Features
Main specifications
• Power loss reduced approximately 30%
compared to the conventional product*
• Highly reliable design appropriate for
use in traction
• Package compatible with the
conventional product*
Module
Si-IGBT
@150˚C
SiC-SBD
@150˚C
150˚C
Max.operating temperature
4000Vrms
Isolation voltage
2.3V
Collector-emitter saturation voltage
turn-on
140mJ
Switching loss
850V/1200V
turn-off
390mJ
2.3V
Emitter-collector voltage
9.0μC
Capacitive charge
* Conventional product: Mitsubishi Electric Power Module
CM1200DC-34N
Internal circuit diagram
2
(E1)
(C2)
C2
E1
G1
G2
Si-IGBT
C1
Power loss comparison
FWD_SW
FWD_DC
Si-IGBT
IGBT_SW
IGBT_DC
Approx.
30%
Power loss [W]
4
:SiC-SBD
reduction
E2
3
(C1)
1
CM1200DC-34N
(E2)
CMH1200DC-34S
Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1,
Three-phase modulation, Tj=125˚C
600V/15A Super-mini Full SiC DIPIPMTM
for Home Appliances
PSF15S92F6 NEW
Contributes to extremely high power-efficiency in air conditioners,
and easily applicable to industrial equipment
Features
• SiC-MOSFET achieves reduction in ON resistance, power loss reduced approx. 70% compared
to conventional product*
• Construct low-noise system by reducing recovery current
• Numerous built-in functions: Bootstrap diode for
power supply to drive P-side, temperature
information output, etc.
• Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology
• As package and pin layout compatibility with conventional products* is ensured, simply replace
with this product to improve performance
*Conventional product: Mitsubishi Electric Super-mini DIPIPM™ Series
Power loss comparison
LVIC
Module power loss [W]
Internal block diagram
HVIC
NV
NU
W
V
U
P
Tr_SW
Tr_DC
Approx.
70%
reduction
Si DIPIPMTM
NW
Di_SW
Di_DC
Full SiC DIPIPMTM
Vcc=300V, VD=15V(Si),18V(SiC), fc=15kHz, P.F=0.95, Modulation=0.8,
Io=1.5Arms, Tj=125℃
6
Super-mini Hybrid / Full SiC DIPPFCTM for Home Appliances
PSH20L91A6-A / PSF20L91A6-A Commercially available
Utilizing SiC enables high-frequency switching and contributes to
reducing the size of peripheral components
Features
• Incorporating SiC chip in the Super-mini package widely used in home appliances
• The SiC chip allows high-frequency switching (up to 40kHz) and contributes to
downsizing the reactor, heat sink and other peripheral components
• Adopts the same package as the Super mini DIPIPMTM to eliminate the need for a
spacer between the inverter and heat sink, and to facilitate its implementation
Power loss comparison
Internal block diagram (Full SiC DIPPFCTM)
:SiC-MOSFET
L1
L2
LVIC
CFo
GND
N2
Cin1
Cin2
N1
45%
reduction
Si DIPPFC™
Full SiC DIPPFC™
Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C
Interleaved PFC circuit configuration (for Hybrid SiC DIPPFCTM)
:SiC-SBD
Hybrid SiC DIPPFC™
P2
L1
Vin1
MCU
High-frequency drive enables
reactor size to be reduced
P1
VD
Vin2
L2
LV
IC
Fo
CFo
Si-IGBT
N2
AC input
N1
GND
+
To inverter part
PFC circuit and drive IC integrated making
it possible to reduce size including
smaller mounting area and simplified layout pattern
Merits of combined use of SiC DIPIPMTM and DIPPFCTM
Interleave PFC circuit in the case of discrete element configuration
In the case of using
SiC DIPIPMTM and DIPPFCTM configuration
High adjustment
spacer
Di
Tr
PFC control and protection circuit parts
Di
Tr
No need to use spacer for adjusting
Merit 1 height when attaching heat sink
7
Tr_DC
Approx.
Power loss [W]
Vin1
Fo
Tr_SWoff
Tr_SWon
P1
P2
VD
Vin2
FWD_SW
FWD_DC
:SiC-SBD
DIPIPMTM
SiC DIPPFCTM
DIPIPMTM
Integration of PFC circuit and drive IC made it possible to
Merit 2 reduce the mounting area and make components more
compact such as simplifying the wiring pattern
SiC Power Module Lineup
Unit: mm
31.2
30
28
6.5
LABEL
23
23
12
94
23
17
21.14
18.49
Hybrid SiC Power Modules for
High-frequency Switching Applications
CMH 200DU-24NFH
CMH 300DU-24NFH
7.5
17
12
6.72
22
39
110
93±0.25
(8.5)
7.5
14
23.72
6
6-M6 NUTS
Hybrid SiC Power Modules for
High-frequency Switching Applications
CMH 400DU-24NFH
CMH 600DU-24NFH
Tc measured point
108
93±0.25
14
14
22
39
(8.5)
TAB#110,
t=0.5
16
+1
7 18
2.8
LABEL
600V/50A Large Hybrid SiC DIPIPMTM
for PV Applications
PSH50YA2A6
A = 2.54
±0.3
B = 5.08±0.3
A
B
A
A
A
B
A
(2.54×10)
2.54±0.3
2.8
B
18 19
12 13
14 15 1617
20
7 8 9 1011
41
42
4 56
31±0.5
7
18
LABEL
7
18
62±0.25
80
17.5 6 15 6
(9)
TAB#110. t=0.5
57±0.25
130±0.5
4-M8 NUTS
57±0.25
29
30
31
32
Type name , Lot No.
12.7
18
40
34
2-ø4.5±0.2
33
4
2
3
1
124±0.25
140±0.5
23
B
21.5
20±0.1
A
A
1
B
14
25
1700V/1200A Hybrid SiC Power Modules
for Traction Inverters
CMH1200DC-34S
30±0.2
B
14
25
TAB#110,
t=0.5
4
LABEL
7 18
14
3-M6 NUTS
4
18
9.25 (10)
4-φ6.5 MOUTING
HOLES
18.25
2.5
21.2 8.5
21.5
7.5
7
29 –0.5
29 –0.5
16
21.2 7.5
7
+1.0
16
25
+1.0
25
3-M6 NUTS
4-φ6.5 MOUNTING HOLES
2-φ6.5MOUNTING HOLES
29 –0.5
3-M5 NUTS
12
8.5
12
80±0.25
22
12
(22.2)
17.5 6 15 6
7
48±0.25
62
4
25.7
18
8.85 8.25
18
13
48
4
23
3.5
19- 0.5
(9)
17
3.81
3.81
3.81
13.64
23
*Tentative No.
Hybrid SiC Power Modules for
High-frequency Switching Applications
CMH100DY-24NFH
CMH150DY-24NFH
3.81
3.81
13.64
55
32
32.75
(21.14)
42.7
15- 0.64
3
10.75
6.5
SCREWING
DEPTH 7.5
41.35
44
11.75
6-M5
NUTS
5-M4 NUT
19
7.75
19.05
121.7
110±0.5
94.5
39
22
57.5
50±0.5
19
19
57.15
3.75
19
13
4-φ5.5
MOUNTING
HOLES
18.8
92.3
62
19
9
12 (SCREWING DEPTH)
7
15
2
11.6 1.1
2.5
7
5
13.5
10
25
2-R7
1
13
9
4.06
2-φ 5.5
MOUNTING
HOLES
16 15.25
3-2 6-2
31
2-φ 5.5
MOUNTING
HOLES
15
16
3-2
12
10
14.5 17.5
1.65
50
39
7
17.5
5-2.54
10.16
67.4
5.57
106
3.25
16
19.75
19.75
3-2
16.5
4
10.16
120
7
2-2.54
2-2.54
1
10.16
11
8.5
23.79
2-2.54
106 ±0.3
(20.5)
13
120
7
1200V/400A,1200V/800A
Full SiC Power Modules for Industrial Use
FMF400BX-24A
FMF800DX-24A
7
1200V/75A Hybrid/Full SiC-IPM
for Industrial Equipment
PMH75CL1A120/PMF75CL1A120
600V/75A Full SiC-IPM for PV Applications
PMF75B4L1A060
(3)
600V/200A Hybrid SiC-IPM
for Industrial Use
PMH200CS1D060
10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3
6-M4 NUTS
2.7
0.8
SCREWING
DEPTH
MIN. 7.7
2
11.85±0.2
18±0.2
44±0.2
57±0.2
55.2±0.3
6-φ7 MOUNTING
HOLES
SCREWING
DEPTH
MIN. 16.5
5±0.2
8
8.6
16
+1
1.8
16±0.2
40±0.2
53±0.2
38 -0
70 ±0.3
79 ±0.5
0.28
1.778±0.2
38±0.5
20x1.778(-35.56)
35±0.3
14-0.5
1
1
2-
R
1.6
Type name
Lot No.
3MIN
12
0.28
24±0.5
(2.2)
18
(1)
600V/15A Super-mini Full SiC DIPIPM™
PSF15S92F6-A
Super-mini Hybrid / Full SiC DIPPFC™
PSH20L91A6-A / PSF20L91A6-A
Long
18
2.54±0.2
4-C1.2
25
8-0.6
14x2.54(-35.56)
0.45
0.45
0.45
0.2
0.45
HEAT SINK SIDE
5.5±0.5
14±0.5
0.25
8
Development of Mitsubishi Electric SiC Power Devices
and Power Electronics Equipment Incorporating Them
Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics,
we succeeded in developing various elemental technologies.
In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.
Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.
We will continue to provide competitive SiC power modules with advanced development and achievements from now on.
2010
January 2010
Developed large-capacity
power module equipped
with SiC diode
Early
1990s
2011
January 2011
Verified highest power
conversion efficiency*1 for solar
power generation system
power conditioner
(domestic industry)
October 2011
Commercialized SiC inverter
for use in railcars
Developed new material,
silicon-carbide (SiC) power
semiconductor, maintaining
a lead over other companies
2000s
October 2010
Launched "Kirigamine"
inverter air conditioner
Developed various elemental
technologies
2006
January 2006
Successfully developed
SiC inverter for driving motor
rated at 3.7kW
2009
February 2009
Verified 11kW SiC inverter,
world's highest value*1 with
approx. 70% reduction
in power loss
November 2009
Verified 20kW SiC inverter,
world's highest value*1 with
approx. 90% reduction
in power loss
9
Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI)
and New Energy and Industrial Technology Development Organization (NEDO).
2012
March 2012
Developed motor system
with built-in SiC inverter*2
September 2012
Verified built-in main circuit
system for railcars
2014
February 2014
Developed EV motor
drive system with
built-in SiC inverter*2
Contributing to the realization
of a low-carbon society and
more affluent lifestyles
May 2014
Began shipping samples
of hybrid SiC power modules
for high-frequency
switching applications
2016
April 2016
Launched Super-mini
Full SiC DIPIPM™
November 2014
Launched Large Hybrid
SiC DIPIPMTM
for PV Applications
May 2016(Tentative)
Launched package
air conditioners with
full SiC DIPIPMTM in Japan
2015
January 2015
Launched power conditioner
for PV equipped
with full SiC-IPM
June 2015
Railcar traction system with
full SiC power modules installed
in Shinkansen bullet trains
July 2012
Began shipping samples
of hybrid SiC
power modules
December 2012
Launched CNC drive unit
equipped with SiC power module
2013
February 2013
Developed SiC for
application in elevator
control systems*2
March 2013
Delivered auxiliary power
supply systems for railcars
February 2013
Developed technologies
to increase capacities of
SiC power modules*2
May 2013
Launched SiC power
modules
*1 Researched in press releases by Mitsubishi Electric. *2 Currently under development, as of April 2016.
* The year and month listed are based on press releases or information released during the product launch month in Japan.
December 2013
Launched railcar traction inverter
with full SiC power module
10
SiC POWER MODULES
Mitsubishi Electric Europe B.V. (European Headquarters)
– Semiconductor European Business Group –
Mitsubishi-Electric-Platz 1 / D-40882 Ratingen
Phone +49 (0) 21 02 / 486 0 / Fax +49 (0) 21 02 / 486 41 40
Mitsubishi Electric Europe B.V.
German Branch
Semiconductor Sales Office
Mitsubishi-Electric-Platz 1
D-40882 Ratingen
Phone +49 (0) 21 02 / 486 34 30
Fax
+49 (0) 21 02 / 486 72 20
Mitsubishi Electric Europe B.V.
UK Branch
Semiconductor Sales Office
Travellers Lane, Hatfield
GB-Herts. AL 10 8XB
Phone +44 17 07 / 21 61 00
Mitsubishi Electric
(Russia) LLC
Semiconductor Sales Office
Kosmodamianskaya Nab. 52 Bld. 1
113054 Moscow
Phone +7 495 721 20 70
Fax
+7 495 721 20 71
Mitsubishi Electric Europe B.V.
French Branch
Semiconductor Sales Office
25, Boulevard des Bouvets
F-92741 Nanterre Cedex (Paris)
Phone +33 1 / 55 68 55 68
Fax
+33 1 / 55 68 57 39
Mitsubishi Electric Europe B.V.
Italian Branch
Semiconductor Sales Office
Viale Colleoni 7 – Palazzo Sirio
I-20041 Agrate Brianza (Milano)
Phone +39 039 / 60 53 10
Fax
+39 039 / 60 53 212
Spanish Representative Agent
for Mitsubishi Electric Europe
in Spain and Portugal
C/ Las Hayas, 127
28922 Alcorcón (Madrid)
Phone +34 9 / 16 43 68 05
Please visit our website for further details.
www.MitsubishiElectric.com
www.mitsubishichips.eu
Revised publication, effective Apr. 2016.
Superseding publication of HG-802C May 2015.
Specifications subject to change without notice.
HG-802C FU-1604 Printed in Japan <IP>
2016
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