Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMDT3904
NPN EPITAXIAL SILICON TRANSISTOR
DUAL NPN SMALL SIGNAL
SURFACE MOUNT TRANSISTOR

DESCRIPTION
The UTC MMDT3904 is a dual NPN small signal surface mount
transistor.

FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Package
MMDT3904G-AL6-R
SOT-363
MMDT3904G-AL6-R

1
E1
Pin Assignment
2
3
4
5
6
B1 C2 E2 B2 C1
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL6: SOT-363
(3)Green Package
(3) G: Halogen Free and Lead Free
Packing
Tape Reel
MARKING
6
5
4
D1AG
1
2
3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMDT3904

NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
200
mA
Power Dissipation
PD
200
mW
Thermal Resistance, Junction to Ambient
θJA
625
°C/W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS (Note 1)
DC Current Gain
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base- Emitter Saturation Voltage
VBE(sat)
TEST CONDITIONS
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
60
40
6
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
40
70
100
60
30
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COB
Current Gain-Bandwidth Product
fT
VCB = 5.0V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 10mA, f = 100MHz
VCC=3V,VBE=0.5V,
Turn On Time
tON
IC=10mA,IB1=1mA
Turn Off Time
tOFF
IB1=1B2=1mA
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
0.65
TYP
MAX
UNIT
50
50
V
V
V
nA
nA
300
0.20
0.30
0.85
0.95
V
V
V
V
4.0
pF
MHz
70
ns
250
ns
300
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MMDT3904
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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