Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMDT8150
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
LOW VCESAT NPN EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
„
The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It
has low VCE(SAT) performance and the transistor elements are
independent to eliminate interference.
FEATURES
„
* Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA
* Transistor elements are independent to eliminate interference.
* Mounting cost and area can be cut in half.
EQUIVALENT CIRCUIT
„
6
5
4
Tr1
Tr2
1
„
2
3
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMDT8150L-AL6-R
MMDT8150G-AL6-R
„
Package
Packing
SOT-363
Tape Reel
MARKING
T81
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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„
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
800
mA
Collector Current (Pulse)
ICP
1.5 (Note 2)
A
Power Dissipation
PD
200 (total) (Note 3)
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, PW=10ms
3. 150mW per element must not be exceeded.
„
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
TEST CONDITIONS
BVCBO
IC=100µA, IE=0
BVCEO
IC=2mA, IB=0
BVEBO
IE=100µA, IC=0
ICBO
VCB=30V, IE=0
IEBO
VEB=6V, IC=0
VCE(SAT)1 IC=50mA, IB=2.5mA
Collector-Emitter Saturation Voltage
VCE(SAT)2 IC=400mA, IB=20mA
(Note 1)
VCE(SAT)3 IC=800mA, IB=80mA
Base-Emitter Voltage
VBE(ON)
VCE=1V, IC=10mA
hFE1
VCE=1V, IC=100mA
DC Current Gain
hFE2
VCE=1V, IC=500mA
hFE3
VCE=2V, IC=50mA
Current Gain-Bandwidth Product
fT
VCE=5V, IC=50mA, f=100MHz
Output Capacitance
COBO
VCB=10V, f=1MHz
Note: 1. Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
40
V
32
V
6
V
0.5
µA
0.5
µA
40
60
mV
0.2 0.3
V
0.3 0.5
V
1
V
180
560
40
82
150
MHz
15
pF
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Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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