UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT-IN RESISTORS) 3 2 FEATURES 1 2 SOT-23 1 SOT-323 (JEDEC TO-236) * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. 3 EQUIVALENT CIRCUIT 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free DTD123YG-AE3-R DTD123YG-AL3-R DTD123YL-T92-B DTD123YG-T92-B DTD123YL-T92-K DTD123YG-T92-K Note: Pin Assignment: G: GND I: IN O: OUT DTD123YG-AE3-R Package SOT-23 SOT-323 TO-92 TO-92 Pin Assignment 1 2 3 G I O G I O G O I G O I Packing Tape Reel Tape Reel Tape Box Bulk (1)Packing Type (1) B: Tape Box, K: Bluk, R: Tape Reel (2)Package Type (2) AE3: SOT-23, AL3: SOT-323,T92: TO-92 (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free MARKING SOT-23 / SOT-323 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-92 1 of 3 QW-R206-087.D DTD123Y NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless others specified) PARAMETER RATINGS UNIT 50 V -5 ~ +12 V 500 mA SOT-23/SOT-323 200 mW Power dissipation PD TO-92 625 mW Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Supply voltage Input voltage Output current SYMBOL VCC VIN IC ELECTRICAL CHARACTERISTICS (TA=25°C, unless others specified) PARAMETER SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IO(OFF) DC Current Gain hFE Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT Note: Transition frequency of the device TEST CONDITIONS VCC=5V, IOUT=100μA VOUT=0.3V, IOUT=20mA IO/II=50mA/2.5mA VIN=5V VCC=50V, VIN=0V VOUT=5V, IOUT=50mA VCE=10V, IE= −50mA, f=100MHz (Note) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 0.3 UNIT 0.1 0.3 3.6 0.5 V mA μA 2.2 4.5 200 2.86 5.5 KΩ 2 56 1.54 3.6 V MHz 2 of 3 QW-R206-087.D DTD123Y NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Fig.1 Input Voltage vs. Output Current (ON Characteristics) 10 5 VOUT=0.3V 50 Output Current, IOUT (mA) Input Voltage, VIN(ON) (V) 100 Fig.2 Output Current vs. Input Voltage (OFF Characteristics) 20 10 TA=-40℃ 25℃ 100℃ 5 2 1 500m 200m 100m 0.5 1 VCC=5V 2 1 0.5 TA=100℃ 25℃ -40℃ 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 2 0 5 10 20 50 100 200 500 0.5 1.0 Fig.3 DC Current Gain vs. Output Current DC Current Gain, hFE 200 100 50 20 10 5 2 1 0.5 1000 VOUT=5V TA=100℃ 25℃ -40℃ 2 5 10 20 50 100 200 500 Output Current, IOUT (mA) 2.5 3.0 Fig.4 Output Voltage vs. Output Current 500 Output Voltage, VOUT(ON) (mV) 500 2.0 Input Voltage, VI(OFF) (V) Output current, IOUT (mA) 1K 1.5 200 100 IO/II=20 TA=100℃ 25℃ -40℃ 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 200 500 Output Current, IOUT (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-087.D