Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTD123Y
NPN SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT-IN RESISTORS)

3
2
FEATURES
1
2
SOT-23
1
SOT-323
(JEDEC TO-236)
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.

3
EQUIVALENT CIRCUIT
1
TO-92

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
DTD123YG-AE3-R
DTD123YG-AL3-R
DTD123YL-T92-B
DTD123YG-T92-B
DTD123YL-T92-K
DTD123YG-T92-K
Note: Pin Assignment: G: GND
I: IN
O: OUT
DTD123YG-AE3-R

Package
SOT-23
SOT-323
TO-92
TO-92
Pin Assignment
1
2
3
G
I
O
G
I
O
G
O
I
G
O
I
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
(1)Packing Type
(1) B: Tape Box, K: Bluk, R: Tape Reel
(2)Package Type
(2) AE3: SOT-23, AL3: SOT-323,T92: TO-92
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-23 / SOT-323
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-92
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DTD123Y

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless others specified)
PARAMETER
RATINGS
UNIT
50
V
-5 ~ +12
V
500
mA
SOT-23/SOT-323
200
mW
Power dissipation
PD
TO-92
625
mW
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Supply voltage
Input voltage
Output current

SYMBOL
VCC
VIN
IC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
VIN(OFF)
Input Voltage
VIN(ON)
Output Voltage
VOUT(ON)
Input Current
IIN
Output Current
IO(OFF)
DC Current Gain
hFE
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
VCC=5V, IOUT=100μA
VOUT=0.3V, IOUT=20mA
IO/II=50mA/2.5mA
VIN=5V
VCC=50V, VIN=0V
VOUT=5V, IOUT=50mA
VCE=10V, IE= −50mA, f=100MHz (Note)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
0.3
UNIT
0.1
0.3
3.6
0.5
V
mA
μA
2.2
4.5
200
2.86
5.5
KΩ
2
56
1.54
3.6
V
MHz
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DTD123Y
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS

Fig.1 Input Voltage vs. Output Current
(ON Characteristics)
10
5
VOUT=0.3V
50
Output Current, IOUT (mA)
Input Voltage, VIN(ON) (V)
100
Fig.2 Output Current vs. Input Voltage
(OFF Characteristics)
20
10
TA=-40℃
25℃
100℃
5
2
1
500m
200m
100m
0.5 1
VCC=5V
2
1
0.5
TA=100℃
25℃
-40℃
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
2
0
5 10 20 50 100 200 500
0.5
1.0
Fig.3 DC Current Gain vs. Output Current
DC Current Gain, hFE
200
100
50
20
10
5
2
1
0.5
1000
VOUT=5V
TA=100℃
25℃
-40℃
2
5 10 20 50 100 200 500
Output Current, IOUT (mA)
2.5
3.0
Fig.4 Output Voltage vs. Output Current
500
Output Voltage, VOUT(ON) (mV)
500
2.0
Input Voltage, VI(OFF) (V)
Output current, IOUT (mA)
1K
1.5
200
100
IO/II=20
TA=100℃
25℃
-40℃
50
20
10
5
2
1
0.5 1
2
5 10
20 50 100 200 500
Output Current, IOUT (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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