Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR

DESCRIPTION
The UTC MJE13003D-P is a NPN Power Transistor. It is
intended to be used in applications requiring medium voltage
capability and high switching speeds.
FEATURES

* Fast-Switching And High Voltage Capability
* Dynamic Parameters With Low Spread
* High Reliability
* Integrated Antiparallel Collector-Emitter Diode

INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
MJE13003DL-P-x-T92-B
MJE13003DG-P-x-T92-B
TO-92
MJE13003DL-P-x-T92-K
MJE13003DG-P-x-T92-K
TO-92
Note: Pin Assignment: C: Collector
B: Base E: Emitter
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
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MJE13003D-P

Preliminary
NPN SILICON TRANSISTOR
MARKING
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
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage (VBE =0)
VCES
700
V
Collector-Emitter Voltage (IB =0)
VCEO
400
V
Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)
VEBO
9
V
Collector Current
IC
1.5
A
Collector Peak Current (tP<5ms)
ICM
3
A
Base Current
IB
0.75
A
Base Peak Current (tP<5ms)
IBM
1.5
A
TA=25°C
1.1
W
Power Dissipation
PD
TC=25°C
1.5
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage (Note)
Collector Cut-Off Current
SYMBOL
BVEBO
VCEO(SUS)
ICES
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
DC Current Gain
Rise Time
Storage Time
Fall Time
Resistive Load
hFE1
hFE2
tR
tS
tF
Inductive Load Storage Time
tS
Diode Forward Voltage
VF
Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %

TEST CONDITIONS
IE =10mA, IC=0
IC=10mA, IB=0
VCE =700V,VBE =0
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=1.5 A, IB=0.5 A
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=0.4A, VCE =5 V
IC=1 A, VCE =5 V
VCC=125 V, IC=1 A,
IB1=0.2 A, IB2=-0.2 A
tP=25μs
IC=1 A, IB1=0.2 A,VBE =-5 V,
L=50mH, VCLAMP=300V
IF=0.5 A
MIN
9
450
14
5
TYP MAX UNIT
18
V
V
1
mA
0.5
V
1
V
3
V
1
V
1.2
V
57
30
1
μs
4
μs
0.7
μs
0.8
μs
1.5
V
CLASSIFICATION OF hFE1
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
UNISONIC TECHNOLOGIES CO., LTD
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D
31 ~ 37
E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
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
Preliminary
NPN SILICON TRANSISTOR
TEST CIRCURTS
Inductive Load Switching Test Circuit
(3)
IC
(1)
IB
VCE
RBB(2)
VBB
VClamp
+
VCC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
3. Fast Recovery Rectifier
Resistive Load Switching Test Circuit
IC
(1)
RC(2)
IB
VCE
RBB(2)
VBB
+
VCC
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
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Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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