Data Sheet

Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK118-50DL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in TOPFET2 technology
assembled in a 3 pin surface mount
plastic package.
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
FEATURES
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
BUK129-50DL
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
16
65
150
50
V
A
W
˚C
mΩ
IISL
Input supply current
650
µA
VIS = 5 V
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
POWER
INPUT
MOSFET
RIG
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT404
PIN
PIN CONFIGURATION
DESCRIPTION
mb
1
input
2
drain
3
source
mb
SYMBOL
drain
May 2001
D
TOPFET
I
P
2
1
S
3
1
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK118-50DL
BUK129-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
ID
Continuous drain source voltage1
Continuous drain current
VIS = 5 V; Tmb = 25 ˚C
-
V
A
Continuous drain current
Continuous input current
Non-repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature2
VIS = 5 V; Tmb ≤ 125 ˚C
tp ≤ 1 ms
Tmb ≤ 25 ˚C
normal operation
-5
-10
-55
-
50
self limited
16
5
10
65
175
150
ID
II
IIRM
PD
Tstg
Tj
A
mA
mA
W
˚C
˚C
Tsold
Case temperature
during soldering
-
260
˚C
MIN.
MAX.
UNIT
-
2
kV
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
EDSM
EDRM
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
IDM = 16 A; VDD ≤ 20 V
Tmb ≤ 25 ˚C
Tmb ≤ 95 ˚C; f = 250 Hz
MIN.
MAX.
UNIT
-
200
32
mJ
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
VDS
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
0
35
V
4 V ≤ VIS ≤ 5.5 V
3
Drain source voltage
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
Junction to mounting base
Rth j-a
Junction to ambient
CONDITIONS
minimum footprint FR4 PCB
MIN.
TYP.
MAX.
UNIT
-
1.75
1.92
K/W
-
50
-
K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK118-50DL
BUK129-50DL
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified
SYMBOL
V(CL)DSS
IDSS
PARAMETER
CONDITIONS
Off-state
VIS = 0 V
Drain-source clamping voltage
Drain source leakage current
MIN.
TYP.
MAX.
UNIT
ID = 10 mA
50
-
-
V
IDM = 2 A; tp ≤ 300 µs; δ ≤ 0.01
50
60
70
V
-
0.1
100
10
µA
µA
-
36
39
95
50
100
55
mΩ
mΩ
mΩ
mΩ
MIN.
TYP.
MAX.
UNIT
16
12
24
-
32
36
A
A
8
-
36
A
40
200
120
350
160
600
W
µs
150
170
-
˚C
VDS = 40 V
Tmb = 25 ˚C
RDS(ON)
On-state
IDM = 6 A; tp ≤ 300 µs; δ ≤ 0.01
Drain-source resistance
VIS ≥ 4.4 V
Tmb = 25 ˚C
VIS ≥ 4 V
Tmb = 25 ˚C
OVERLOAD CHARACTERISTICS
-40˚C ≤ Tmb ≤ 150˚C unless otherwise specified.
SYMBOL
ID
PARAMETER
CONDITIONS
Short circuit load
VDS = 13 V
Drain current limiting
VIS = 5 V;
4.4 V ≤ VIS ≤ 5.5 V
Tmb = 25˚C
4 V ≤ VIS ≤ 5.5 V
PD(TO)
TDSC
Overload protection
VIS = 5 V;Tmb = 25˚C
Overload power threshold
Characteristic time
device trips if PD > PD(TO)
which determines trip time1
Overtemperature protection
Tj(TO)
Threshold junction
temperature2
1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].
2 This is independent of the dV/dt of input voltage VIS.
May 2001
3
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK118-50DL
BUK129-50DL
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VIS(TO)
Input threshold voltage
VDS = 5 V; ID = 1 mA
MIN.
TYP.
MAX.
UNIT
Tmb = 25˚C
0.6
1.1
1.6
2.4
2.1
V
V
IIS
Input supply current
normal operation;
VIS = 5 V
VIS = 4 V
100
80
220
195
400
330
µA
µA
IISL
Input supply current
protection latched;
VIS = 5 V
VIS = 3 V
200
130
400
250
650
430
µA
µA
VISR
Protection reset voltage1
reset time tr ≥ 100 µs
1.5
2
2.9
V
tlr
Latch reset time
VIS1 = 5 V, VIS2 < 1 V
10
40
100
µs
V(CL)IS
Input clamping voltage
II = 1.5 mA
5.5
-
8.5
V
-
33
-
kΩ
MIN.
TYP.
MAX.
UNIT
-
15
30
µs
-
30
60
µs
-
70
140
µs
-
35
70
µs
RIG
2
Input series resistance
to gate of power MOSFET
Tmb = 25˚C
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C; VDD = 13 V; resistive load RL = 4 Ω. Refer to waveform figure and test circuit.
SYMBOL
PARAMETER
CONDITIONS
td on
Turn-on delay time
VIS = 5 V
tr
Rise time
td off
Turn-off delay time
tf
Fall time
VIS = 0 V
1 The input voltage below which the overload protection circuits will be reset.
2 Not directly measureable from device terminals.
May 2001
4
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK118-50DL
BUK129-50DL
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.40
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT404
Fig.2. SOT404 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.4 g
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
May 2001
5
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK118-50DL
BUK129-50DL
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
May 2001
6
Rev 1.900
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