VT6045CBP Datasheet

VT6045CBP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• TJ 200 °C max. in solar bypass mode application
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
1
TYPICAL APPLICATIONS
VT6045CBP
PIN 1
PIN 2
PIN 3
CASE
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
45 V
IFSM
320 A
VF at IF = 30 A
0.47 V
TOP max. (AC mode)
150 °C
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
TJ max. (DC forward current)
200 °C
Polarity: As marked
Package
TO-220AB
Diode variation
Dual common cathode
per
Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t  1 h
SYMBOL
VT6045CBP
UNIT
VRRM
45
V
IF(AV) (1)
60
30
A
IFSM
320
A
TOP, TSTG
-40 to +150
°C
TJ (2)
 200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 11-May-16
Document Number: 89366
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT6045CBP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 10 A
IF = 15 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 30 A
VF (1)
IF = 10 A
TA = 125 °C
IF = 15 A
IF = 30 A
Reverse current per diode
TA = 25 °C
VR = 45 V
TA = 125 °C
IR (2)
TYP.
MAX.
0.44
-
0.47
-
0.54
0.64
0.33
-
UNIT
V
0.37
-
0.47
0.56
-
3000
μA
18
50
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
per device
RJC
VT6045CBP
1.5
0.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT6045CBP-M3/4W
1.89
4W
50/tube
Tube
Revision: 11-May-16
Document Number: 89366
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT6045CBP
www.vishay.com
Vishay General Semiconductor
65
60
55
50
45
40
35
30
25
20
15
10
5
0
100
Instantaneous Reverse Current (mA)
DC Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DC Forward Current at
Thermal Equilibrium
100
120
140
160
180
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
200
20
Fig. 1 - Maximum Forward Current Derating Curve
D = 1.0
D = 0.1
8
T
6
4
D = tp/T
Junction Capacitance (pF)
Average Power Loss (W)
D = 0.2
12
2
10 000
1000
tp
0
0
5
15
10
20
30
25
100
35
0.1
1
10
100
Reverse Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
16
10
80
100 000
D = 0.5
D = 0.3
14
60
Fig. 4 - Typical Reverse Characteristics Per Diode
20
18
40
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
TA = 150 °C
10
TA = 100 °C
TA = 125 °C
1
TA = 25 °C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Junction to Case
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 11-May-16
Document Number: 89366
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT6045CBP
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 11-May-16
Document Number: 89366
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000