VBT4045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES TO-263AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(DC) 40 A VRRM 45 V IFSM 240 A VF at IF = 40 A 0.51 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Package TO-263AB Diode variation Single die MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) SYMBOL VBT4045BP UNIT VRRM 45 V 40 A IF(DC) (1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 240 A Operating junction temperature range (AC mode) TOP -40 to +150 °C Junction temperature in DC forward current without reverse bias, t 1 h TJ (1) 200 °C Notes (1) With heatsink (2) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test Revision: 09-Sep-13 Document Number: 89442 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT4045BP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER SYMBOL IF = 5 A IF = 20 A Instantaneous forward voltage TA = 25 °C IF = 40 A VF (1) IF = 5 A IF = 20 A TA = 125 °C IF = 40 A VR = 45 A Reverse current TA = 25 °C TA = 125 °C TYP. MAX. 0.41 - 0.50 - 0.57 0.67 0.28 - UNIT V 0.41 - 0.51 0.63 - 3000 μA 29 85 mA IR (2) Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VBT4045BP UNIT RJC 0.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT4045BP-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT4045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Instantaneous Forward Current (A) 45 DC Forward Current (A) 40 35 30 25 20 15 10 DC Forward Current at Thermal Equilibrium 5 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve Revision: 09-Sep-13 200 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C TA = 25 °C 1 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Document Number: 89442 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT4045BP-E3 100 Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) www.vishay.com TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 100 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak reverse Voltage (%) t - Pulse Duration (s) Fig. 3 - Typical Reverse Characteristics Fig. 5 - Typical Transient Thermal Impedance Junction Capacitance (pF) 100 000 TJ = 25 °C f = 1.0 MHz Vstg = 50 mVp-p 10 000 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.130 (3.3) REF. 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) Revision: 09-Sep-13 0.205 (5.20) 0.195 (4.95) 0.055 (1.40) 0.047 (1.19) 0.33 (8.38) MIN. 0.047 (1.2) REF. 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 89442 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000