2SD2568 Transistors Power Transistor (400V, 0.5A) 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Parameter VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 0.5 A Collector power dissipation PC 10 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2568 CPT3 PQ TL 2500 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. Typ. Max. Unit 400 − − V Collector-emitter breakdown voltage BVCEO 400 − − V Emitter-base breakdown voltage BVEBO 7 − ICBO − − 10 − − IEBO − − Collector-emitter saturation voltage VCE(sat) − Base-emitter saturation voltage DC current transfer ratio VBE(sat) − 82 Collector cutoff current Emitter cutoff current hFE Transition frequency fT Output capacitance Cob − − − − 13.5 8 V 10 0.5 µA µA V 1.0 V 270 − MHz pF − − Conditions IC=50µA IC=1mA IE=50µA VCB=400V VEB=6V IC=100mA , IB=10mA IC=100mA , IB=10mA VCE/IC=5V/50mA VCE=5V , IE=−50mA , f=10MHz VCB=10V , IE=0A , f=1MHz Rev.A 1/2 2SD2568 Transistors zElectrical characteristics curves 1 Ta=25 C mA 3.0mA A 2.5m .0mA 2 A 1.5m 3.5 120 A 1.0m A 0.5m 80 40 0 2 4 6 8 0.2 0.1 0.05 0.02 DC CURRENT GAIN : hFE Ta=100°C 200 25°C −25°C 50 20 10 5 2 0.5 1 TRANSITION FREQUENCY : fT(MHz) (V) 500 Ta=25 C VCE=10V 200 100 50 20 10 5 2 1 −0.001 −0.005 −0.002 −0.01 −0.02 −0.1 −0.05 −0.2 EMITTER CURRENT : IE (A) Fig.7 Gain bandwidth product vs. emitter current 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 5V 20 10 5 1 0.001 0.002 0.005 0.01 0.02 1.6 Ta=25 C 5 2 IC/IB=20 1 10 0.5 0.2 5 0.1 0.05 0.02 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) 500 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( Ι ) 10 IC/IB=10 5 2 1 Ta= −25 C 25 C 100 C VBE(sat) 0.5 0.2 0.1 0.05 Ta=100 C 25 C −25 C VCE(sat) 0.02 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.4 DC current gain vs. collector current ( ΙΙ ) 50 2 10 COLLECTOR CURRENT : IC (A) VCE=10V 100 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=10V 0.05 0.1 0.2 200 Fig.2 Grounded emitter propagation characteristics 500 1 0.001 0.002 0.005 0.01 0.02 −25°C 0.01 0.001 10 Fig.1 Grounded emitter output characteristics 100 Ta=100°C 0.005 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 25°C 0.002 IB=0mA 0 Ta=25 C 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 160 1000 VCE=3V 0.5 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 200 Fig.6 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Base-emitter saturation voltage vs. collector current Ta=25 C f=1MHz IE=0A 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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