Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UDT1605
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
120V NPN SILICON HIGH
VOLTAGE DARLINGTON
TRANSISTOR

DESCRIPTION
The UTC UDT1605 is an NPN Darlington transistor. Utilizing
UTC’s advanced techonology, UDT1605 features ultra-high DC
current gain and low collector-emitter saturation voltage, making
it suitable for efficient driving functions.
The UTC UDT1605 is suitable for a variety of efficient driving
functions, etc.

FEATURES
* High breakdown voltage
* Low saturation voltage
* Ultra-high DC current gain

SYMBOL

ORDERING INFORMATION
Ordering Number
UDT1605G-AB3-R
Note: Pin Assignment: E: Emitter B: Base
Package
SOT-89
1
B
Pin Assignment
2
3
C
E
Packing
Tape Reel
C: Collector
UDT1605G-AB3-R

(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AB3: SOT-89
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise stated)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at TA=25°C (Note 1)
Linear Derating Factor
RATINGS
UNIT
140
V
120
V
10
V
4
A
1
A
1
W
PD
8
mW/°C
2.8
W
Power Dissipation at TA=25°C (Note 2)
PD
Linear Derating Factor
22
mW/°C
Junction Temperature
TJ:
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
ICM
IC
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
RθJA
125
°C/W
Junction to Ambient (Note 2)
RθJA
45
°C/W
Notes: 1. For a device surface mounted on 25mmx25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
2. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise stated)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
TEST CONDITIONS
IC=100μA
IC=10mA (Note)
IE=100μA
VCB=10V
Collector Cut-Off Current
ICBO
VCB=120V, TAMB=100°C
Emitter Cut-Off Current
IEBO
VEB=8V
Collector Emitter Cut-Off Current
ICES
VCES=120V
IC=250mA, IB=0.25mA (Note)
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=1mA (Note)
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=1mA (Note)
Base-Emitter Turn-On Voltage
VBE(ON)
IC=1A,VCE=5V (Note)
IC=50mA,VCE=5V (Note)
IC=500mA, VCE=5V (Note)
DC Current Gain
hFE
IC=1A, VCE=5V (Note)
IC=2A, VCE=5V (Note)
Transition Frequency
fT
IC=100mA, VCE=10V, f=20MHz
Input Capacitance
CIBO
VCB=500mV, f=1MHz
Output Capacitance
COBO
VCB=10V, f=1MHz
IC=500mA, VCE=10V
Turn-On Time
t(ON)
IB1=IB2=0.5mA
IC=500mA, VCE=10V
Turn-Off Time
t(OFF)
IB1=IB2=0.5mA
Note: Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
140
120
10
TYP MAX UNIT
V
V
V
100
nA
10
μA
0.1
μA
10
μA
1
V
1.5
V
1.8
V
1.7
V
2K
5K
2K 100K
0.5
150
90
15
MHz
pF
pF
0.5
μs
1.6
μs
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Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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