Data Sheet

BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
„
„
„
„
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
„
„
„
„
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
60
V
Per transistor
VDS
drain-source voltage
Tamb = 25 °C
VGS
gate-source voltage
Tamb = 25 °C
ID
drain current
RDSon
drain-source on-state
resistance
-
-
±20
V
Tamb = 25 °C;
VGS = 10 V
[1]
-
-
320
mA
Tj = 25 °C;
VGS = 10 V;
ID = 300 mA
[2]
-
0.9
1.6
Ω
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2]
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
S1
source1
2
G1
gate1
3
D2
drain2
4
S2
source2
5
G2
gate2
6
D1
drain1
Simplified outline
6
5
4
1
2
3
Graphic symbol
D1
S1
D2
G1
S2
G2
msd901
3. Ordering information
Table 3.
Ordering information
Type number
BSS138PS
Package
Name
Description
Version
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
BSS138PS
NZ*
[1]
* = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
drain-source voltage
Tamb = 25 °C
-
60
V
VGS
gate-source voltage
Tamb = 25 °C
-
±20
V
Tamb = 25 °C
-
320
mA
Tamb = 100 °C
-
200
mA
-
1.2
A
ID
IDM
BSS138PS
Product data sheet
drain current
peak drain current
VGS = 10 V
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
[1]
© NXP B.V. 2010. All rights reserved.
2 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb = 25 °C
Min
Max
Unit
[2]
-
280
mW
[1]
-
320
mW
-
960
mW
290
mA
Tsp = 25 °C
Source-drain diode
source current
Tamb = 25 °C
[1]
-
Ptot
total power dissipation
Tamb = 25 °C
[2]
-
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
IS
Per device
mW
°C
−55
+150
°C
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001
120
Pder
(%)
017aaa002
120
Ider
(%)
80
80
40
40
0
−75
−25
25
75
0
−75
125
175
Tamb (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 1.
420
150
Product data sheet
25
75
125
175
Tamb (°C)
ID
I der = -------------------- × 100 %
I D ( 25°C )
Normalized total power dissipation as a
function of ambient temperature
BSS138PS
−25
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
3 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
017aaa122
10
ID
(A)
Limit RDSon = VDS/ID
1
(1)
(2)
10−1
(3)
(4)
10−2
(5)
(6)
10−3
10−1
1
102
10
VDS (V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3.
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
390
445
K/W
[2]
-
340
390
K/W
-
-
130
K/W
-
-
300
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Per device
Rth(j-a)
BSS138PS
Product data sheet
thermal resistance from
junction to ambient
in free air
[1]
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
4 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
017aaa034
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.25
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa035
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.25
0.33
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BSS138PS
Product data sheet
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
5 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
60
-
-
V
0.9
1.2
1.5
V
Tj = 25 °C
-
-
1
μA
Tj = 150 °C
-
-
10
μA
-
-
100
nA
-
1
2
Ω
-
0.9
1.6
Ω
-
700
-
mS
-
0.72
0.8
nC
Per transistor
Static characteristics
V(BR)DSS
drain-source breakdown ID = 10 μA; VGS = 0 V
voltage
VGS(th)
gate-source threshold
voltage
ID = 250 μA; VDS = VGS
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
VGS = ±20 V; VDS = 0 V
[1]
VGS = 5 V; ID = 50 mA
VGS = 10 V; ID = 300 mA
forward
transconductance
gfs
VDS = 10 V; ID = 200 mA
[1]
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
ID = 300 mA;
VDS = 30 V;
VGS = 4.5 V
VGS = 0 V; VDS = 10 V;
f = 1 MHz
VDS = 50 V;
RL = 250 Ω;
VGS = 10 V;
RG = 6 Ω
-
0.14
-
nC
-
0.24
-
nC
-
38
50
pF
-
7
-
pF
-
4
-
pF
-
2
6
ns
-
3
-
ns
-
9
20
ns
-
4
-
ns
0.47
0.75
1.1
V
Source-drain diode
VSD
[1]
BSS138PS
Product data sheet
source-drain voltage
IS = 115 mA; VGS = 0 V
Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
6 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
017aaa112
1.0
VGS = 3.5 V
ID
(A)
017aaa113
10−3
2.75 V
3.0 V
ID
(A)
0.8
2.5 V
10−4
(1)
0.6
(2)
(3)
2.25 V
0.4
10−5
2.0 V
0.2
0.0
0.0
1.0
2.0
3.0
4.0
10−6
0.0
0.5
1.0
1.5
VDS (V)
2.0
VGS (V)
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Per transistor: Output characteristics: drain
current as a function of drain-source voltage;
typical values
Fig 7.
017aaa114
5.0
RDSon
(Ω)
(1)
Per transistor: Sub-threshold drain current as
a function of gate-source voltage
017aaa115
6.0
RDSon
(Ω)
(2)
4.0
4.0
3.0
2.0
(1)
(3)
2.0
(4)
(2)
1.0
(5)
0.0
0.0
0.2
0.4
0.6
0.8
0.0
0.0
1.0
2.0
ID (A)
Tamb = 25 °C
4.0
6.0
8.0
10.0
VGS (V)
ID = 300 mA
(1) VGS = 2 V
(1) Tamb = 150 °C
(2) VGS = 2.5 V
(2) Tamb = 25 °C
(3) VGS = 3 V
(4) VGS = 3.5 V
(5) VGS = 10 V
Fig 8.
Per transistor: Drain-source on-state
resistance as a function of drain current;
typical values
BSS138PS
Product data sheet
Fig 9.
Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
7 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
017aaa116
0.8
ID
(A)
017aaa022
2.4
a
(1)
(2)
0.6
1.8
0.4
1.2
0.2
0.6
(2)
0.0
0.0
1.0
(1)
2.0
3.0
VGS (V)
0.0
−60
VDS > ID × RDSon
0
60
120
180
Tamb (°C)
R DSon
a = ----------------------------R DSon ( 25°C )
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Per transistor: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
017aaa117
2.0
Fig 11. Per transistor: Normalized drain-source
on-state resistance as a function of ambient
temperature; typical values
017aaa118
102
VGS(th)
(V)
(1)
C
(pF)
(1)
1.5
(2)
1.0
(2)
10
(3)
(3)
0.5
0.0
−60
0
60
120
180
Tamb (°C)
ID = 0.25 mA; VDS = VGS
1
10−1
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Per transistor: Gate-source threshold voltage
as a function of ambient temperature
Product data sheet
102
10
VDS (V)
(1) maximum values
BSS138PS
1
Fig 13. Per transistor: Input, output and reverse
transfer capacitances as a function of
drain-source voltage; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
8 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
017aaa119
5.0
VGS
(V)
4.0
VDS
ID
3.0
VGS(pl)
2.0
VGS(th)
VGS
1.0
QGS1
0.0
0.0
QGS2
QGS
0.2
0.4
0.6
0.8
QGD
QG(tot)
QG (nC)
003aaa508
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 14. Per transistor: Gate-source voltage as a
function of gate charge; typical values
Fig 15. Per transistor: Gate charge waveform
definitions
017aaa120
1.2
IS
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
BSS138PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BSS138PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
10 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
c
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Fig 18. Package outline SOT363 (SC-88)
BSS138PS
Product data sheet
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
10. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 19. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 20. Wave soldering footprint SOT363 (SC-88)
BSS138PS
Product data sheet
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
12 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BSS138PS v.1
20101102
Product data sheet
-
-
BSS138PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
13 of 16
BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
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Suitability for use — NXP Semiconductors products are not designed,
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BSS138PS
Product data sheet
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Rev. 1 — 2 November 2010
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BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BSS138PS
Product data sheet
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Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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BSS138PS
NXP Semiconductors
60 V, 320 mA dual N-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 November 2010
Document identifier: BSS138PS