2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 360 mA - 1 1.6 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 500 mA; Tj = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.01 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S mbb076 SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Type number Package 2N7002P Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002P LW% [1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage drain current ID -20 20 V VGS = 10 V; Tamb = 25 °C [1] - 360 mA VGS = 10 V; Tamb = 100 °C [1] - 280 mA - 1.2 A [2] - 350 mW [1] - 420 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 1140 mW Tj junction temperature Tsp = 25 °C - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 360 mA Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 0 −75 125 175 Tamb (°C) Normalized total power dissipation as a function of ambient temperature Fig 2. −25 25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature 017aaa014 10 ID (A) 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 °C (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 310 370 K/W [2] - 260 300 K/W - - 115 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa015 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0.2 0.05 0.02 0.01 10 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa016 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 10 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.75 2.4 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 5 V; ID = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 1.3 2 Ω VGS = 10 V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 1 1.6 Ω VDS = 10 V; ID = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 400 - mS ID = 300 mA; VDS = 30 V; VGS = 4.5 V; Tj = 25 °C - 0.6 0.8 nC - 0.2 - nC - 0.2 - nC - 30 50 pF - 7 - pF - 4 - pF - 3 6 ns - 4 - ns IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 10 20 ns tf fall time - 5 - ns 0.47 0.75 1.1 V VGS = 0 V; VDS = 10 V; f = 1 MHz; Tj = 25 °C VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage 2N7002P Product data sheet IS = 115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa017 0.7 VGS = 4.0 V ID (A) 0.6 017aaa018 10−3 3.5 V ID (A) 0.5 10−4 3.25 V (1) 0.4 0.3 (3) (2) 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 10−6 0.0 0.0 1.0 2.0 3.0 4.0 0 1 2 VDS (V) 3 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa019 10.0 RDSon (Ω) Sub-threshold drain current as a function of gate-source voltage 017aaa020 6.0 RDSon (Ω) (1) 7.5 (2) 4.0 5.0 (1) 2.0 2.5 (2) (3) (4) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 4.0 ID (A) Tamb = 25 °C 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 °C (2) VGS = 3.5 V (2) Tamb = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values 2N7002P Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa021 1.0 017aaa022 2.4 ID (A) a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 (2) 0.0 0.0 1.0 (1) 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 0 60 120 180 Tamb (°C) VDS > ID × RDSon (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa023 3.0 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa024 102 (1) (1) C (pF) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 −60 0 60 120 180 Tamb (°C) 1 10−1 1 VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature 2N7002P Product data sheet 102 10 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa025 5.0 VDS VGS (V) ID 4.0 VGS(pl) 3.0 VGS(th) VGS 2.0 QGS1 QGS2 QGS 1.0 QGD QG(tot) 003aaa508 0.0 0.0 0.2 0.4 0.6 0.8 QG (nC) ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 18. Package outline SOT23 (TO-236AB) 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint for SOT23 (TO-236AB) 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002P v.2 20100729 Product data sheet - 2N7002P_1 Modifications: 2N7002P_1 2N7002P Product data sheet • • Correction of thermal values. Correction of various characteristics values including related graphs. 20100419 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 - © NXP B.V. 2010. All rights reserved. 12 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Definition Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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All rights reserved. 13 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 2N7002P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 July 2010 Document identifier: 2N7002P