LF PA K 33 BUK7M19-60E N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 13 May 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications • • • • 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 60 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 35.8 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 55 W VGS = 10 V; ID = 10 A; Tj = 25 °C; - 15 19 mΩ - 5.9 - nC Static characteristics RDSon drain-source on-state resistance Fig. 11 Dynamic characteristics QGD gate-drain charge ID = 10 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 Scan or click this QR code to view the latest information for this product BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S Source 2 S Source 3 S Source 4 G Gate mb D Mounting base; connected to drain Graphic symbol D G mbb076 1 2 3 S 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package BUK7M19-60E Name Description Version LFPAK33 Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210 7. Marking Table 4. Marking codes Type number Marking code BUK7M19-60E 71960E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 60 V VDGR drain-gate voltage RGS = 20 kΩ - 60 V VGS gate-source voltage DC; Tj ≤ 175 °C -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 55 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 35.8 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 25.3 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 143 A -55 175 °C IDM peak drain current Tstg storage temperature BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 Symbol Parameter Conditions Tj junction temperature Min Max Unit -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 35.8 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 143 A - 21.1 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 35.8 A; Vsup ≤ 60 V; RGS = 50 Ω; [1][2] VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 ID (A) Pder (%) aaa-020756 40 30 80 20 40 10 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature BUK7M19-60E Product data sheet 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V Fig. 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 ID (A) aaa-020761 103 Limit RDSon = VDS / ID 102 tp = 10 us 10 1 10-1 100 us DC 1 ms 10 ms 100 ms 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-020754 102 (1) 10 (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 2.46 2.75 K/W BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 aaa-020764 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 P 0.02 δ= T single shot tp 10-2 10-6 Fig. 5. tp 10-5 10-4 10-3 10-2 t T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V - - 4.5 V 1 - - V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µA VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 10 A; Tj = 25 °C; - 15 19 mΩ - - 42 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11 VGS = 10 V; ID = 10 A; Tj = 175 °C; Fig. 12 Dynamic characteristics QG(tot) total gate charge ID = 10 A; VDS = 48 V; VGS = 10 V; - 17.3 - nC QGS gate-source charge Tj = 25 °C; Fig. 13; Fig. 14 - 3.6 - nC QGD gate-drain charge - 5.9 - nC BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 794 1055 pF Coss output capacitance Tj = 25 °C; Fig. 15 - 117 141 pF Crss reverse transfer capacitance - 76 104 pF td(on) turn-on delay time VDS = 45 V; RL = 4.3 Ω; VGS = 10 V; - 4.9 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 5.4 - ns td(off) turn-off delay time - 13.3 - ns tf fall time - 6.7 - ns Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.83 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; - 18.8 - ns recovered charge VDS = 25 V; Tj = 25 °C - 16.3 - nC Qr ID (A) aaa-020757 40 20 V VGS = 10 V 5.5 V 7V aaa-020760 80 RDSon (mΩ) 30 60 6V 5V 20 40 4.5 V 10 20 4V 0 Fig. 6. 0 1 2 3 VDS (V) 0 4 0 5 10 15 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 10 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 ID (A) aaa-020762 50 003aah027 5 VGS(th) (V) max 40 4 30 3 typ 20 2 min 10 0 175°C 0 1 2 3 1 Tj = 25°C 4 5 6 7 VGS (V) 0 -60 8 VDS = 12 V Fig. 8. 0 60 120 T j (°C) 180 ID = 1 mA ; VDS = VGS Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah028 10-1 Fig. 9. Gate-source threshold voltage as a function of junction temperature aaa-020759 100 RDSon (mΩ) ID (A) 10-2 4.5 V 5V 5.5 V 80 min 10-3 typ max 60 10-4 40 10-5 20 10-6 0 6V 0 2 4 VGS (V) 6 Fig. 10. Sub-threshold drain current as a function of gate-source voltage Product data sheet 0 8 VGS = 10 V 16 7V 24 32 ID (A) 40 Tj = 25 °C Tj = 25 °C; VDS = 5 V BUK7M19-60E 20 V Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 003aaj815 2.4 VGS (V) a aaa-020758 10 8 VDS = 14 V 1.6 6 48 V 4 0.8 2 0 -60 0 60 120 Tj (°C) 0 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 0 4 8 12 16 QG (nC) Tj = 25 °C; ID = 10 A Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-020755 104 C (pF) VDS ID 20 VGS(pl) 103 Ciss 102 Coss VGS(th) VGS QGS2 QGS1 QGS Crss QGD QG(tot) 003aaa508 10 10-1 Fig. 14. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 aaa-020763 100 IS (A) 80 60 40 20 0 175°C 0 0.2 0.4 0.6 Tj = 25°C 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values 11. Application information For guidance on how to use and understand this datasheet, please refer to application note AN11158 "Understanding power MOSFET datasheet parameters". BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 12. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E e1 L SOT1210 A A c1 b1 E1 D2 mounting base D1 D H 1 4 e b w X A A1 c C θ Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) A A1 b b1 c c1 D(1) D1 D2 E(1) E1 e e1 H L Lp w y max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45 3.40 0.25 0.50 nom 0.50 0.65 0.65 0.20 0.10 3.20 2.00 3.20 0.13 0.30 min 0.80 0.00 0.25 0.25 0.10 0.20 2.50 1.90 mm Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version JEDEC 8° 0° sot1210_po References IEC θ JEITA European projection Issue date 12-03-12 14-04-25 SOT1210 Fig. 17. Package outline LFPAK33 (SOT1210) BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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All rights reserved 11 / 13 BUK7M19-60E NXP Semiconductors N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Application information .........................................9 12 Package outline ................................................... 10 13 13.1 13.2 13.3 13.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 May 2016 BUK7M19-60E Product data sheet All information provided in this document is subject to legal disclaimers. 13 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 13 / 13