Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SD2686
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
SILICON NPN EPITAXIAL TYPE
(DARLINGTON POWER)

DESCRIPTION
The UTC 2SD2686 is a silicon NPN epitaxial type transistors,
including a zener diode between collector and base. it uses UTC’s
advanced technology to provide customers high DC current gain.
The UTC 2SD2686 is suitable for solenoid drive and motor drive
applications.

FEATURES
* High DC current gain
* Zener diode included between collector and base

EQUIVALENT CIRCUIT
Collector
Base
≈5kΩ
≈300Ω

Emitter
ORDERING INFORMATION
Order Number
2SB2686G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector

Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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2SD2686

Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
RATINGS
UNIT
VCBO
50
V
VCEO
60±10
V
VEBO
8
V
1
A
DC
IC
Collector Current
Pulse
ICP
3
A
Base Current
IB
0.5
A
Power Dissipation (Note 2)
PD
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: 1 .Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note: 2. Mounted on an FR4 board (glass-epoxy; 1.6mm thick; Cu area, 645mm2)

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
BVCEO
ICBO
ICEO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Turn-On Time
Storage Time
Fall Time
VBE(sat)
tON
tSTG
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC=10mA, IB=0
VCB=45V, IE=0
VCE=45V, IE=0
VEB=8V, IC=0
VCE=2V, IC=1.0A
IC=0.5A, IB=1mA
IC=1.0A, IB=1mA
IC=1.0A, IB=1mA
See specified test circuit.
MIN
50
0.8
2000
TYP MAX UNIT
60
70
V
10
μA
10
μA
4.0
mA
1.2
1.5
2.0
0.4
4.0
0.6
V
V
V
μs
μs
μs
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2SD2686
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT & TIMING CHART
VCC≈30V
30Ω

Preliminary
20µs
Input
Output
Duty cycle<1%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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