UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER) DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s advanced technology to provide customers high DC current gain. The UTC 2SD2686 is suitable for solenoid drive and motor drive applications. FEATURES * High DC current gain * Zener diode included between collector and base EQUIVALENT CIRCUIT Collector Base ≈5kΩ ≈300Ω Emitter ORDERING INFORMATION Order Number 2SB2686G-x-AB3-R Note: Pin Assignment: B: Base C: Collector Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel E: Emitter MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-050.b 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL RATINGS UNIT VCBO 50 V VCEO 60±10 V VEBO 8 V 1 A DC IC Collector Current Pulse ICP 3 A Base Current IB 0.5 A Power Dissipation (Note 2) PD 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Note: 1 .Absolute maximum ratings are stress ratings only and functional device operation is not implied. Note: 2. Mounted on an FR4 board (glass-epoxy; 1.6mm thick; Cu area, 645mm2) ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain SYMBOL BVCEO ICBO ICEO IEBO hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Turn-On Time Storage Time Fall Time VBE(sat) tON tSTG tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=10mA, IB=0 VCB=45V, IE=0 VCE=45V, IE=0 VEB=8V, IC=0 VCE=2V, IC=1.0A IC=0.5A, IB=1mA IC=1.0A, IB=1mA IC=1.0A, IB=1mA See specified test circuit. MIN 50 0.8 2000 TYP MAX UNIT 60 70 V 10 μA 10 μA 4.0 mA 1.2 1.5 2.0 0.4 4.0 0.6 V V V μs μs μs 2 of 3 QW-R208-050.b 2SD2686 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT & TIMING CHART VCC≈30V 30Ω Preliminary 20µs Input Output Duty cycle<1% UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R208-050.b