UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4124D is suitable for electronic ballasts, commonly power amplifier circuit and energy-saving light etc. FEATURES * High switching speed * High reliability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free TO-92 4124DL-T92-B 4124DG-T92-B TO-92 4124DL-T92-K 4124DG-T92-K TO-92 4124DL-T92-R 4124DG-T92-R 4124DL-T60-K 4124DG-T60-K TO-126 Note: Pin Assignment: B: Base C: Collector E: Emitter 4124DL-T92-B Pin Assignment 1 2 3 B C E B C E B C E B C E (1)Packing Type (1) B: Tape Box, K: Bulk, R: Tape Reel (2)Package Type (2) T92: TO-92, T60: TO-126 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Packing Tape Box Bulk Tape Reel Bulk 1 of 3 QW-R204-031.B 4124D NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER Collector-Base Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage RATINGS UNIT 350 V 200 V 7 V 2 A DC Continuous Collector Current Pulse (Note 2) 4 A 1 A DC Base Current Pulse (Note 2) 2 A TO-92 1.5 W Total Dissipation PC TO-126 20 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%. SYMBOL VCES VCEO VEBO IC ICP IB IBP THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL TO-92 TO-126 θJC RATINGS 80 6.25 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT) hFE1 hFE2 fT tS tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=1mA, IB=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=350V, IE=0 VCE=200V, IB=0 VEB=7V, IC=0 IC=0.5A, IB=0.1A IC=1.5A, IB=0.5A IC=1A, IB=0.25A IC=0.2A,VCE=5V IC=2A,VCE=5V IC=0.5A, VCE=10V VCC=24V, IC=0.5A, IB1=-IB2=0.1A MIN 350 200 7 8 5 4 TYP MAX UNIT V V V 100 µA 50 µA 10 μA 0.8 V 1.0 V 1.5 V 50 4 0.7 MHz μs μs 2 of 3 QW-R204-031.B 4124D NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current vs. Collector-Base Voltage 1.0 0.8 0.6 0.4 10 8 6 4 2 0.2 0 12 Collector Current, IC (mA) Collector Current, IC (mA) 1.2 Collector Current vs. Collector-Emitter Voltage 0 200 300 400 100 500 Collector-Base Voltage, VCBO (V) 0 0 400 100 200 300 Collector-Emitter Voltage, VCEO (V) Collector Current vs. Collector-Emitter Voltage 2.4 IB=263.85mA 2 1.6 IB=136.24mA 1.2 0.8 0.4 0 IB=7.19mA 0 5 6 1 4 2 3 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-031.B