Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13009-K
NPN SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
„
DESCRIPTION
The MJE13009-K is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
„
FEATURES
* VCEO 400V and 300 V
* Reverse Bias SOA with Inductive Loads @ TC = 100°C
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C
tC @ 8 A, 100°C is 120 ns (Typ).
*700 V Blocking Capability
*SOA and Switching Applications Information.
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13009L-K-TA3-T
MJE13009G-K-TA3-T
MJE13009L-K-T3P-T
MJE13009G-K-T3P-T
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Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-3P
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Emitter Voltage (VBE=-1.5V)
VCEV
700
V
Emitter Base Voltage
VEBO
9
V
12
Continuous
IC
A
Collector Current
Peak (Note 3)
ICM
24
Continuous
IB
6
Base Current
A
Peak (Note 3)
IBM
12
18
Continuous
IE
A
Emitter Current
Peak (Note 3)
IEM
36
TO-220
2
Power Dissipation
W
TO-3P
80
PD
TO-220
16
Derate above 25°C
mW/°C
TO-3P
640
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
TO-220
TO-3P
TO-220
TO-3P
θJA
θJC
RATINGS
54
21
4
1.55
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
VCBO=Rated Value
Emitter Cutoff Current
ON CHARACTERISTICS (Note)
DC Current Gain
SYMBOL
VCEO
TEST CONDITIONS
TYP
MAX UNIT
IEBO
IC = 10mA, IB = 0
VBE(OFF) = 1.5VDC
VBE(OFF) = 1.5VDC, TC = 100°C
VEB = 9VDC, IC = 0
hFE1
IC = 5A, VCE = 5V
40
IC = 8A, VCE = 5V
30
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 8A, IB = 1.6A, TC = 100°C
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = 100°C
1
1.5
3
2
1.2
1.6
1.5
ICEV
hFE 2
Current-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
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MIN
400
V
1
5
1
mA
mA
V
V
V
V
V
V
V
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS
Transition frequency
fT
IC = 500mA, VCE = 10V, f = 1MHz
Output Capacitance
COB
VCB = 10V, IE = 0, f = 0.1MHz
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
tDLY
VCC = 125Vdc, IC = 8A
Rise Time
tR
IB1 = IB2 = 1.6A, tP = 25μs
Storage Time
tS
Duty Cycle ≤1%
Fall Time
tF
Inductive Load, Clamped (Table 1, Fig. 13)
Voltage Storage Time
tS
IC=8A, VCLAMP=300V, IB1=1.6A
VBE(OFF) = 5V, TC = 100°C
Crossover Time
tC
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
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MIN
TYP
MAX UNIT
180
MHz
pF
4
0.06
0.45
1.3
0.2
0.1
1
4
0.7
µs
µs
µs
µs
0.92
0.12
2.3
0.7
µs
µs
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TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
+5V
VCC
33
1N4933
MJE210
TEST CIRCUITS
0.001µF
5V
2N2222
VCLAMP
IC
RB
1k
68
1k
+5V
1N4933
0.02µF
Note:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
*SELECTED FOR . 1 kV
VCE
D.U.T.
1k
270
5.1k
IB
2N2905
CIRCUIT VALUES
MR826*
33 1N4933
PW
DUTY CYCLE ≤ 10%
tR, tF ≤ 10 ns
L
47
1/2W
51
MJE200
100
-VBE(OFF)
GAP for 200μH/20A
LCOIL = 200μH
VCC = 20V
VCLAMP = 300VDC
VCC = 125V
RC = 15Ω
D1 = 1N5820 or Equiv.
RB = Ω
TEST WAVEFORMS
+10V
25µs
0
-8V
tR, tF < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
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TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
TIME DIAGRAMS
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
DUTY CYCLE ≤ 10%
24A
SERIES SWITCHING
REGULATOR
PD = 4000 W 2
TC = 100°C
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(OFF) ≤ 9.0 V
DUTY CYCLE ≤ 10%
12A
TURN–ON
VCC
VOUT
TURN–OFF
+
VCC 400V 1
700V
1
COLLECTOR VOLTAGE
RINGING CHOKE
INVERTER
VCC
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
DUTY CYCLE ≤ 10%
24A
VOUT
N
TC = 100 C
IC
PD = 4000 W 2
12A
TURN–OFF
tOFF
tON
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9.0 V
DUTY CYCLE ≤ 10%
TURN–ON
+ VCC
VCC+N(VOUT)
t
LEAKAGE SPIKE
VCE
VCC+
N(VO)
VCC
400V 1
700V
1
COLLECTOR VOLTAGE
t
PUSH–PULL
INVERTER/CONVERTER
VOUT
VCC
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TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC(A)
3
5
8
12
„
NPN SILICON TRANSISTOR
TC(°C)
25
100
25
100
25
100
25
100
tSV(ns)
770
1000
630
820
720
920
640
800
tRV(ns)
100
230
72
100
55
70
20
32
tFI(ns)
150
160
26
55
27
50
17
24
tTI(ns)
200
200
10
30
2
8
2
4
tC(ns)
240
320
100
180
77
120
41
54
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to determine the total switching time. For this reason, the following
new terms have been defined.
tSV = Voltage Storage Time, 90% IB1 to 10% VCEM
tRV = Voltage Rise Time, 10–90% VCEM
tFI = Current Fall Time, 90–10% ICM
tTI = Current Tail, 10–2% ICM
tC = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tC) f
Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ tC. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which
are guaranteed at 100℃.
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TYPICAL CHARATERISTICS
Collector, IC (A)
Collector Current, IC (A)
„
Fig. 3 Forward Bias Power Derating
1
Second Breakdown
Derating
0.6
Thermal
Derating
0.4
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, TC (°C)
Fig. 4 Typical Thermal Response [ZθJC(t)]
Transient Thermal Resistance
(Normalized), r(t)
Power Derating Factor
0.8
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when TC ≥ 25°C.
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Fig. 1 may
be found at any case temperature by using the appropriate curve
on Fig. 3.
TJ(PK) may be calculated from the data in Fig. 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Fig. 2) is discussed in the applications information
section.
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(PK)
ZθJC(t) = r(t) θJC
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(PK) – TC = P(PK) ZθJC(t)
Duty Cycle, D = t1/t2
0.1
0.05
0.07
0.05
0.02
0.03
0.02
0.01
0.01
0.01
Single Pulse
0.02
0.05
0.1
0.2
0.5
1
2
5
Time, t (ms)
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10
20
50
100
200
500
1.0k
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DC Current Gain, hFE
Collector-Emitter Voltage, VCE (V)
TYPICAL CHARACTERISTICS (Cont.)
„
Fig. 9 Collector Cutoff Region
Fig. 10 Capacitance
10k
4k
TJ = 25°C
2k
1k
TJ = 150°C
100
Capacitance, C (pF)
Collector Current, IC (mA)
VCE = 250V
125°C
100°C
10
75°C
50°C
1
25°C
0.1
-0.4
REVERSE
FORWARD
-0.2
0
+0.2
+0.4
Base–Emitter Voltage, VBE (V)
+0.6
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CIB
1k
800
600
400
200
COB
100
80
60
40
0.1 0.2 0.5 1 2 5 10 20 50 100
Reverse Voltage, VR (V)
200
500
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■ RESISTIVE SWITCHING PERFORMANCE
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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