IDT 49FCT806APYG

IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
FAST CMOS
BUFFER/CLOCK DRIVER
FEATURES:
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IDT49FCT806/A
DESCRIPTION:
0.5 MICRON CMOS Technology
Guaranteed low skew < 700ps (max.)
Low duty cycle distortion < 1ns (max.)
Low CMOS power levels
TTL compatible inputs and outputs
Rail-to-rail output voltage swing
High drive: -24mA IOH, +64mA IOL
Two independent output banks with 3-state control
1:5 fanout per bank
"Heartbeat" monitor output
Available in SSOP and SOIC packages
The FCT806 is an inverting buffer/clock driver built using advanced dual
metal CMOS technology. Each bank consists of two banks of drivers. Each
bank drives five output buffers from a standard TTL compatible input. These
devices feature a “heart-beat” monitor for diagnostics and PLL driving. The
MON output is identical to all other outputs and complies with the output
specifications in this document.
The FCT806 offers low capacitance inputs and hysteresis. Rail-to-rail
output swing improves noise margin and allows easy interface with CMOS
inputs.
FUNCTIONAL BLOCK DIAGRAM
OEA
INA
5
INB
5
OA1-OA5
OB1-OB5
OEB
MON
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE
MAY 2010
1
c
2006
Integrated Device Technology, Inc.
DSC-5837/3
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2)
Terminal Voltage with Respect to GND
–0.5 to +7
V
VTERM(3)
Terminal Voltage with Respect to GND
–0.5 to VCC+0.5
V
VCCA
1
20
VCC
OA1
2
19
OB1
TSTG
Storage Temperature
–65 to +150
°C
IOUT
DC Output Current
–60 to +120
mA
OA2
3
18
OB2
OA3
4
17
OB3
GNDA
5
16
GNDB
OA4
6
15
OB4
OA5
7
14
OB5
8
13
MON
OEA
9
12
OEB
INA
10
11
INB
NC
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Input and VCC terminals.
3. Output and I/O terminals.
CAPACITANCE (TA = +25OC, f = 1.0MHz)
Symbol
SOIC/ SSOP
TOP VIEW
Parameter(1)
Conditions
Typ.
Max.
Unit
CIN
Input Capacitance
VIN = 0V
4.5
6
pF
C OUT
Output Capacitance
VOUT = 0V
5.5
8
pF
NOTE:
1. This parameter is measured at characterization but not tested.
NOTE:
1. Pin 8 is not internally connected on devices with a "K" prefix in the date code. On older
devices, pin 8 is internally connected to GND. To insure compatibility with all products,
pin 8 should be connected to GND at the board level.
PIN DESCRIPTION
Pin Names
OEA, OEB
Description
3-State Output Enable Inputs (Active LOW)
INA, INB
Clock Inputs
OAn, OBn
Clock Outputs
MON
Monitor Output
FUNCTION TABLE (1)
Inputs
OEA, OEB
INA, INB
OAn, OBn
MON
L
L
H
H
L
H
L
L
H
L
Z
H
H
H
Z
L
NOTE:
1. H = HIGH
L = LOW
Z = High-Impedance
2
Outputs
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC - 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5V ± 5%
Parameter
Test Conditions(1)
VIH
Input HIGH Level
Guaranteed Logic HIGH Level
VIL
Input LOW Level
Guaranteed Logic LOW Level
IIH
Input HIGH Current
VCC = Max.
VI = VCC
IIL
Input LOW Current
VCC = Max.
Off State (Hi-Z) Output Current
VCC = Max.
Symbol
IOZH
IOZL
Min.
Typ.(2)
Max.
Unit
2
—
—
V
—
—
0.8
V
—
—
±1
µA
VI = GND
—
—
±1
µA
VO = VCC
—
—
±1
µA
VO = GND
—
—
±1
VIK
Clamp Diode Voltage
VCC = Min., IIN = –18mA
—
–0.7
–1.2
V
IOS
Short Circuit Current
VCC = Max., VO = GND(3)
–60
–120
—
mA
—
VOH
Output HIGH Voltage
VCC = 3V, VIN = VLC or VHC
IOH = –32µA
VHC
VCC
VCC = Min.
IOH = –300µA
VHC
VCC
—
VIN = VIH or VIL
IOH = –15mA
3.6
4.3
—
IOH = –24mA
2.4
3.8
—
VCC = 3V, VIN = VLC or VHC
IOL = 300µA
—
GND
VLC
—
GND
VLC
V
VOL
Output LOW Voltage
VCC = Min.
IOL = 300mA
VIN = VIH or VIL
IOL = 64mA
—
0.3
0.55
VH
Input Hysteresis for all inputs
—
—
200
—
mV
ICC
Quiescent Power Supply Current
VCC = Max., VIN = GND or VCC
—
5
500
µA
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
3
V
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
∆ICC
ICCD
Test Conditions(1)
Parameter
Quiescent Power Supply Current
VCC = Max.
TTL Inputs HIGH
VIN = 3.4V(3)
Dynamic Power Supply Current(4)
VCC = Max.
VIN = VCC
Outputs Open
VIN = GND
Min.
Typ.(2)
Max.
Unit
—
1
2.5
mA
—
0.15
0.2
mA/MHz
—
1.5
2.5
—
2
3.8
—
4.1
6
—
5.1
8.5
OEA = OEB = GND
50% Duty Cycle
IC
Total Power Supply Current(6)
VCC = Max.
VIN = VCC
Outputs Open
VIN = GND
fO = 10MHz
50% Duty Cycle
VIN = 3.4V
OEA = OEB = VCC
VIN = GND
Mon. Output Toggling
VCC = Max.
VIN = VCC
Outputs Open
VIN = GND
(5)
fO = 2.5MHz
50% Duty Cycle
VIN = 3.4V
OEA = OEB = GND
VIN = GND
Eleven Outputs Toggling
NOTES:
1.
2.
3.
4.
5.
For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
Typical values are at VCC = 5V, +25°C ambient.
Per TTL driven input (VIN = 3.4V); all other inputs at VCC or GND.
This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
Values for these conditions are examples of the IC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fONO)
ICC = Quiescent Current (ICCL, ICCH and ICCZ)
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fO = Output Frequency
NO = Number of Outputs at fO
All currents are in milliamps and all frequencies are in megahertz.
4
(5)
mA
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE(1)
FCT806
FCT806A
Conditions(2)
Min.
Max.
Min.
Max.
Unit
CL = 50pF
RL = 500Ω
1.5
5.6
1.5
5.3
ns
Output Rise Time
Output Fall Time
—
—
1.5
1.5
—
—
1.5
1.5
ns
ns
tSK(O)
Output skew: skew between outputs of all banks of
same package (inputs tied together)
—
0.7
—
0.7
ns
tSK(P)
Pulse skew: skew between opposite transitions
of same output (|tPHL -– tPLH|)
—
1
—
1
ns
tSK(PP)
Part-to-part skew: skew between outputs of different
—
1.5
—
1.5
ns
Symbol
tPLH
tPHL
tR
tF
Parameter
Propagation Delay
INA to OAn, INB to OBn
packages at same power supply voltage,
tPZL
temperature, package type and speed grade
Output Enable Time
1.5
8
1.5
8
ns
tPZH
tPLZ
OEA to OAn, OEB to OBn
Output Disable Time
1.5
7
1.5
7
ns
tPHZ
OEA to OAn, OEB to OBn
NOTES:
1. Propagation delay range indicated by Min. and Max. limit is due to VCC, operating temperature and process parameters. These propagation delay limits do not imply skew.
2. See test circuits and waveforms.
5
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
TEST CIRCUITS AND WAVEFORMS
SWITCH POSITION
VCC
Test
Switch
Disable LOW
Enable LOW
Closed
Disable HIGH
Enable HIGH
GND
7V
5 00
P ulse
G enera to r
V IN
VOUT
D .U .T .
50pF
50 0
RT
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
CL
Test Circuits for All Outputs
IN P U T
3V
3V
1.5 V
1 .5V
IN P U T
0V
tP H L
tP L H
0V
tP L H 1
tP L H 1
VOH
VOH
2.0V
0.8V
OU TPUT
tR
1 .5V
OUTPUT 1
1.5V
VOL
t S K (o )
VOL
t S K (o )
1 .5V
tF
Package Delay
OUTPUT 2
VOL
tP H L 2
tP L H 2
t S K (o ) = t P L H 2 - t P L H 1
3V
1.5V
IN P U T
or
t P H L 2 - tP H L 1
Output Skew
0V
tP L H
VOH
tP H L
VOH
1 .5V
OU TPUT
3V
VOL
1.5V
t S K (p) = t P H L - t P L H
IN P U T
tP L H 1
Pulse Skew - tSK(P)
tP H L 1
VOH
PACKAGE 1
OUTPUT
D IS A B L E
E N A B LE
C O N TR O L
IN P U T
tP Z L
O U T PU T
N O R M A LL Y
LO W
tP L Z
3 .5V
S W IT C H
CLO SED
S W IT C H
OPEN
t S K (p p )
PACKAGE 2
OU TPUT
0V
1.5V
tP H L 2
tP L H 2
0 .3V V O L
1.5V
0V
t S K (p p) = t P L H 2 - t P L H 1
or
tP H L 2 - tP H L 1
Part-to-Part Skew - tSK(PP)
0 .3V V O H
0V
NOTE:
1. Package 1 and Package 2 are same device type and speed grade.
Enable and Disable Times
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns
6
VOH
VOL
tP H Z
tP Z H
O U T PU T
N O R M A LL Y
H IG H
1.5V
VOL
t S K (p p )
3V
1.5V
3.5V
1.5V
0V
IDT49FCT806/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
ORDERING INFORMATION
IDT49FCT
XXXX
Device Type
X
Package
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806
806A
Fast CMOS Buffer/Clock Driver
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