Si3812DV Datasheet

Si3812DV
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET with Schottky Diode
FEATURES
MOSFET PRODUCT SUMMARY
VDS (V)
20
RDS(on) ()
ID (A)
0.125 at VGS = 4.5 V
2.4
0.200 at VGS = 2.5 V
1.8
SCHOTTKY PRODUCT SUMMARY
VKA (V)
VF (V)
Diode Forward Voltage
IF (A)
20
0.48 V at 0.5 A
0.5
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
D
K
S
A
TSOP-6
Top View
A
1
K
6
G
3 mm
S
2
5
N/C
G
3
4
D
2.85 mm
N-Channel MOSFET
Ordering Information: Si3812DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
VDS
Drain-Source Voltage (MOSFET)
Steady State
20
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
± 12
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C
TA = 85 °C
ID
2.4
Continuous Source Current (MOSFET Diode Conduction)a
V
V
2.0
1.7
IDM
Pulsed Drain Current (MOSFET)
1.4
8
IS
1.05
0.75
Average Foward Current (Schottky)
IF
0.5
0.5
Pulsed Foward Current (Schottky)
IFM
8
8
TA = 25 °C
1.15
0.83
TA = 85 °C
0.59
0.53
1.0
0.76
Maximum Power Dissipation (MOSFET)a
a
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
TA = 25 °C
PD
TA = 85 °C
0.52
TJ, Tstg
Unit
A
W
0.48
- 55 to 150
°C
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
t5s
Schottky
Junction-to-Ambienta
Steady State
Junction to Foot (MOSFET Drain, Schottky Cathode)
Symbol
MOSFET
Steady State
MOSFET
RthJA
Schottky
MOSFET
Schottky
RthJF
Typical
Maximum
93
110
103
125
130
150
140
165
75
90
80
95
Unit
°C/W
Note:
a. Surface mounted on 1" x 1" FR4 board.
MOSFET AND SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
0.6
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Schottky Diode Forward Voltagea
RDS(on)
V
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 85 °C
10
VDS 5 V, VGS = 4.5 V
5
µA
A
VGS = 4.5 V, ID = 2.4 A
0.100
0.125
VGS = 2.5 V, ID = 1.0 A
0.160
0.200
gfs
VDS = 5 V, ID = 2.4 A
5
VSD
IS = 1.5 A, VGS = 0 V
0.79
1.1
2.1
4.0

S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS = 10 V, VGS = 4.5 V, ID = 2.4 A
0.4
Rg
1
td(on)
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
0.3
3.7
10
17
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 4.5 V, Rg = 6 
30
50
14
25
6
12
IF = 3.0 A, dI/dt = 100 A/µs
30
50

ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Test Conditions
Typ.
Max.
IF = 0.5 A
Min.
0.42
0.48
IF = 0.5 A, TJ = 125 °C
0.33
0.4
VR = 20
0.002
0.100
VR = 20 V, TJ = 75 °C
0.06
1
VR = 20 V, TJ = 125 °C
1.5
10
VR = 10 V
31
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
VGS = 4.5 V thru 3.5 V
TC = - 55 °C
8
3V
I D - Drain Current (A)
I D - Drain Current (A)
8
6
2.5 V
4
2V
2
25 °C
125 °C
6
4
2
1.5 V
0
0
1
2
3
4
0
0.0
5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
4.0
300
0.5
250
0.4
C - Capacitance (pF)
R DS(on) - On-Resistance ()
0.5
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
Ciss
200
150
100
Coss
0.1
50
Crss
0
0.0
0
1
2
3
4
5
6
0
7
16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.8
VDS = 10 V
ID = 2.4 A
1.6
1.8
0.9
VGS = 4.5 V
ID = 2.4 A
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
ID - Drain Current (A)
2.7
0.0
0.0
8
On-Resistance vs. Drain Current
4.5
3.6
4
1.2
1.0
0.8
0.5
1.0
1.5
2.0
2.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.40
10
R DS(on) - On-Resistance ()
I S - Source Current (A)
ID = 2.4 A
TJ = 150 °C
1
TJ = 25 °C
0.32
ID = 1 A
0.24
0.16
0.08
0.00
0.1
0
0.3
0.6
1.2
0.9
1.5
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
8
ID = 250 µA
6
0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
4
2
- 0.4
- 0.6
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
TJ - Temperature (°C)
10
1
30
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
1
I F - Forward Current (A)
I R - Reverse Current (mA)
20
10
0.1
20 V
10 V
0.01
TJ = 150 °C
1
TJ = 25 °C
0.001
0.0001
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
TJ - Junction Temperature (°C)
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
1.0
CT - Junction Capacitance (pF)
150
120
90
60
30
0
0
4
8
12
16
20
VKA - Reverse Voltage (V)
Capacitance
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si3812DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 140 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000