datasheet

SK150MLI066T
Absolute Maximum Ratings
Symbol Conditions
IGBT
+:;
<
!
< , 0>1 9
!?)
, 81 9/ , 81 9
SEMITOP 4
IGBT Module
6..
+
010
$
, >. 9
08.
$
-..
$
@ 8.
+
!?), 8 !
+:; C 6.. +
<
, 081 9
6
D
, 81 9
001
$
E.
$
-..
$
001
$
E.
$
-..
$
Inverse Diode
!&
<
, 0>1 9
, >. 9
!&?)
SK150MLI066T
+ , -6. +A +": B 8. +A
!&?), 8 !&
Freewheeling Diode
!&
<
, 0>1 9
, 81 9
, >. 9
!&?)
Preliminary Data
Units
, 81 9
+":;
®
Values
Module
!?);
Features
!" #
$% # &'
! ( Typical Applications*
) * *
Remarks
+ , -...+ $/0/1.2
#
3 4 , !"
" 11 ( 5 16 7 $
*<
7F. GGG H0>1
9
7F. GGG H081
9
81..
+
+
$/ 0 G
Characteristics
Symbol Conditions
IGBT
+":
+": , +:/ ! , 8 $
!:;
+": , . +/ +: , +:;
!":;
+: , . +/ +": , 8. +
+:.
:
+": , 01 +
+:
! , 01. $/ +": , 01 +
+: , 81/ +": , . +
?"
:
:
?<7
!"
1/I
<
, 81 9
<
, 81 9
< , 01. 9
F
< , 819
, 01.9
max.
Units
6/1
+
./..>6
$
$
08..
$
./I
0/0
+
./>
0
+
1
J
6/1
>
J
< , 819
*G
0/F1
0/I1
+
< , 01.9
*G
0/61
8/.1
+
, 0 )2
, 01. 9
?" , F J
M , F0.. $MD
?" , F J
M , F0.. $MD
1
, 081 9
+":,7>+GGGH01+
<
typ.
<
K"
min.
< , 81 9
<
, 81 9/ + , -..+
!, 01.$
< , 01. 9
+":,7>MH01+
E/F
./6
&
&
./8E
&
0-1.
8
L
0..
1F
8/>
F1.
61
N
1/E
N
./11
5M'
MLI-T
1
16-07-2009 DIL
© by SEMIKRON
SK150MLI066T
Characteristics
Symbol Conditions
Inverse Diode
+& , +:
!& , 01. $A +": , . +
+&.
SEMITOP 4
IGBT Module
typ.
max.
Units
<
, 81 9
*G
0/1
0/>
+
<
, 01. 9
*G
0/1
0/>
+
0
0/0
+
< , 01. 9
./E
0
+
<
, 81 9
-/1
F
J
<
, 01. 9
F
F/>
J
< , 01. 9
0-.
I
$
D
< , 81 9
&
®
min.
!??)
K
!& , 01. $
M , F0.. $MD
:
+?, -..+
8/6
N
?<7
./>8
5M'
Freewheeling Diode (Neutral Clamp Diode)
+& , +:
SK150MLI066T
!& , 01. $A +": , . +
+&.
, 81 9
*G
0/1
0/>
+
< , 01. 9
*G
0/1
0/>
+
0
0/0
+
./E
0
+
-/1
F
+
< , 01. 9
F
F/>
+
, 01. 9
08.
I
<
< , 81 9
<
&
< , 81 9
Preliminary Data
Features
!" #
$% # &'
! ( Typical Applications*
) * *
Remarks
+ , -...+ $/0/1.2
#
3 4 , !"
" 11 ( 5 16 7 , 01. 9
!??)
K
!& , 01. $
M , -0.. $MD
:
+?,-..+
8/F
N
?<7&
./>8
5M'
)
O
<
8/1
$
D
8/>1
(
6.
[email protected]
J
Temperature sensor
?0..
,0..9
?81,1OJ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
MLI-T
2
16-07-2009 DIL
© by SEMIKRON
SK150MLI066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
16-07-2009 DIL
© by SEMIKRON
SK150MLI066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
16-07-2009 DIL
© by SEMIKRON
SK150MLI066T
UL recognized
file no. E 63 532
II ; 3 8G ; 3 -/6 5
II
)%!7
16-07-2009 DIL
© by SEMIKRON