datasheet

SK80GB063
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Symbol Conditions
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Inverse Diode
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SK80GB063
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Preliminary Data
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1
17-11-2006 DIL
© by SEMIKRON
SK80GB063
Characteristics
Symbol Conditions
Inverse Diode
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SEMITOP® 3
IGBT Module
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min.
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SK80GB063
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Preliminary Data
Features
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
! " #$ Typical Applications*
%
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GB
2
17-11-2006 DIL
© by SEMIKRON
SK80GB063
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
17-11-2006 DIL
© by SEMIKRON
SK80GB063
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
17-11-2006 DIL
© by SEMIKRON
SK80GB063
UL recognized file
no. E 63 532
$)1 % , #, O )
$ )1
5
9
17-11-2006 DIL
© by SEMIKRON