datasheet

SK100GH12T4T
2 #3 4," &
Absolute Maximum Ratings
Symbol Conditions
IGBT
1,
5 2 #3 4,
,
5 2 !83 4,
,:
SEMITOP 4
IGBT module
SK100GH12T4T
!#77
1
!#9
-
2 87 4,
!77
-
$77
-
<#7
1
5 2 !37 4,
!7
@
2 #3 4,
!7#
-
2 87 4,
=!
-
$77
-
8!3
-
,:2 $ ' , " ; !
1,, 2 =77 1> 1) ; !3 1>
1, ? !#77 1
Units
2 #3 4,
1)
®
Values
Inverse Diode
5 2 !83 4,
:
:2 $ ' " ; !
2 !7 > & %
5 2 !37 4,
Module
-
A:B
%5
1
Features
!"#"$
% &
' ( )*+ ,-. + /0
(, Typical Applications*
1 -," ! D
1) 2 1," , 2 $"+ -
,
1) 2 7 1" 1, 2 1,
1, 2 7 1" 1) 2 #7 1
1,7
,
1,AB
,
,
1) 2 !3 1
1)2C81DDDE!31
:)
5 2 #3 4,
AB
A&&B
&
:) 2 !9 G
L 2 !=77 -L@
:)&& 2 !9 G
L 2 !=77 -L@
&&
:A5CB
)*
1
min.
typ.
3
3"=
max.
Units
9"3
1
1,68
-
7"+
!#77
1
5 2 #3 4,
7"=
7"F
5 2 !37 4,
7"8
7"=
5 2 #34,
!7
G
5 2 !374,
!3
G
1
!"=
#
5 2 !374,%D
#"#
#"+
& 2 ! HI
3"3+
7"+!
7"$#
837
,
#
K
9$
93
!9"9
3#!
=7
M
!7
M
7"+$
NL/
,
J)
4,
#377
5 2 !#3 4,
, 2 !77 -" 1) 2 !3 1 5 2 #34,%D
1, 2 #3" 1) 2 7 1
C+7 DDD E!#3
5 2 #3 4,
5 2 !#3 4,
)
4,
2 #3 4," &
Characteristics
Symbol Conditions
IGBT
1)AB
C+7 DDD E!83
1,, 2 9771
,2 !775 2 !37 4,
1
1
GH-T
1
22-03-2016 MS
© by SEMIKRON
SK100GH12T4T
Characteristics
Symbol Conditions
Inverse Diode
1 2 1,
2 !77 -> 1) 2 7 1
17
®
SEMITOP 4
IGBT module
min.
typ.
max.
Units
5 2 #3 4,%D
#"#
#"3
1
5 2 !37 4,%D
#"!
#"+3
1
5 2 #3 4,
!"$
!"3
1
5 2 !37 4,
7"F
!"!
1
5 2 #3 4,
F"3
!7"3
G
5 2 !37 4,
!$
!+
G
5 2 !37 4,
3#
!+
@,
::
J
2 !77 L 2 !=77 -L@
1,,29771
3"#
M
:A5CB0
7"9#
NL/
Freewheeling Diode
1 2 1,
SK100GH12T4T
2 -> 1) 2 1
17
::
J
2 -
5 2 4,%D
1
5 2 4,
1
5 2 4,
1
5 2 4,
@,
M
Features
!"#"$
% &
' ( )*+ ,-. + /0
(, O
NL/
#"3
#"83
(
97
+F$<3P
K
Temperature sensor
:!77
2 !774, A:#323OGB
Typical Applications*
1 GH-T
2
22-03-2016 MS
© by SEMIKRON
SK100GH12T4T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
22-03-2016 MS
© by SEMIKRON
SK100GH12T4T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
22-03-2016 MS
© by SEMIKRON
SK100GH12T4T
, =+ A " ,*" &
Q #B
, =+
)HC
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application
in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications
embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or
other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all
applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by
authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any
consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is
assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of noninfringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of
any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights
of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any
third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on
the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously
supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.
5
22-03-2016 MS
© by SEMIKRON
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