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Mitsubishi Electric Europe B.V.
UK Branch
Semiconductor Sales Office
Mitsubishi Electric Europe B.V.
Moscow Branch
Semiconductor Sales Office
Gothaer Straße 8
D-40880 Ratingen
Phone: +49 (0) 21 02/486 45 21
Fax:
+49 (0) 21 02/486 72 20
Travellers Lane, Hatfield
GB-Herts. AL 10 8XB
Phone: +44 17 07/27 89 07
Fax:
+44 17 07/27 89 97
Kosmodamianskaya Nab. 52 Bld. 3
113054 Moscow
Phone: +7 495 721 20 70
Fax:
+7 495 721 20 71
Mitsubishi Electric Europe B.V.
French Branch
Semiconductor Sales Office
Mitsubishi Electric Europe B.V.
Italian Branch
Semiconductor Sales Office
Spanish Representative Agent
for Mitsubishi Electric Europe
in Spain and Portugal
25, Boulevard des Bouvets
F-92741 Nanterre Cedex (Paris)
Phone: +33 1/55 68 55 68
Fax:
+33 1/55 68 57 39
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Phone: +39 039/60 53 10
Fax:
+39 039/60 53 212
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28922 Alcorcón (Madrid)
Phone: +34 9/16 43 68 05
MITSUBISHI ELECTRIC
Mitsubishi Electric Europe B.V.
German Branch
Semiconductor Sales Office
www.mitsubishichips.eu · www.mitsubishichips.com · [email protected]
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Selection Guide 2014
Gothaer Straße 8 · D-40880 Ratingen
Phone: +49 (0) 21 02/486 0 · Fax: +49 (0) 21 02/486 72 20
Power Devices
Mitsubishi Electric Europe B.V. (European Headquarters)
– Semiconductor European Business Group –
SF
ET
M
ule
s
Power Devices
od
Power Devices
Selection Guide 2014
Mitsubishi Electric
Environmental Vision 2021
Climate protection is a major issue worldwide and will
have a significant impact on our future. The goals for
the reduction of climatically harmful greenhouse gas
CO2 are laid down in the Kyoto Protocol. Mitsubishi
Electric has had a tradition of reducing CO2 emissions
with advanced technology and highly energy-efficient
products, and is extending this commitment into the
future through its Environmental Initiative.
The Semiconductor European Business Group of
Mitsubishi Electric is working to realise these goals
by producing electronic devices that are more energy
efficient, while also working to reduce the amount of
lead and other controlled substances being used.
As shown in the chart below power losses have been
already decreased step by step with the introduction
of new Generations of Power Modules.
The ”Environmental Vision 2021“ is Mitsubishi
Electric’s long-range vision for environmental
management, which looks towards the year 2021 –
as the 100th anniversary of the company’s founding –
by which to achieve specific and meaningful results.
Based on the principle of ”Making Positive
Contributions to the Earth and its People through
Technology and Action,“ the Vision defines a set of
initiatives for realising a sustainable, recycling-based
global society through application of the company’s
broad range of high-level technologies and the
actions of its global workforce of talented individuals.
”Environmental Vision 2021“ commits Mitsubishi
Electric to deliver the following by 2021:
• Reduction of CO2 emissions
• Sustain resource cycle by Reducing, Reusing and
Recycling (3Rs)
• Run educational/leadership training for employees
and children to nurture environmental awareness
2
Every day, the Mitsubishi Electric Group as a whole
makes a positive contribution to realising its
”Environmental Vision 2021“ through its products,
activities and technologies.
Mitsubishi Electric
Global Leader in Semiconductor Technology
Mitsubishi Electric belongs to the world leading
companies in Manufacturing, Marketing and Sales of
electrical and electronic products. The Semiconductor
European Business Group is operating all sales and
export activities for Western and Eastern Europe,
Russia and South Africa from its headquarters in
Ratingen in North Rhine-Westphalia, Germany.
Semiconductors are indispensable components for
today’s increasingly high performance products,
making them equally important to “resources” for a
better future. Mitsubishi Electric, a global leader in the
field of semiconductors, has secured its top position
with continuous innovative research and development
and the investment in state-of-the-art production
techniques. The worldwide customers of Mitsubishi
Electric profit from extensive technical services as
well as a broad sales and distribution network.
The success is a result of our expertise in four
product areas: High Frequency, Opto and Power
Semiconductors as well as TFT-LCD Modules. With
regarding quality and reliability as our core values,
Mitsubishi Electric Europe B.V. has achieved ISO
9001 and 14001 certification continuously.
Mitsubishi Electric is the first company in Japan, who
received the International Railway Industry Standard
(IRIS) certification in March 2009. The successful
award of IRIS certification reinsures Mitsubishi
Electric’s high-quality, certified products and services
for the railway industry.
Power Semiconductors Core Capabilities
Mitsubishi has more than 40 years experience in
developing and producing power semiconductors.
It has been successfully directed the development of
power semiconductor devices starting from current
controlled GTO and Bipolar Darlington transistor
to the first voltage controlled IGBT. With its constant
innovative research and development in this field,
Mitsubishi Electric has secured its top position.
As the first company worldwide Mitsubishi Electric,
which mastered all required techniques in chip and
package technologies, developed the concept of the
Intelligent Power Module (IPM). IPM concept is widely
accepted on the market, making Mitsubishi Electric
market leader in this field. An integrated solution of
inverter, driver and protection circuit reduce the size,
cost and development time of the system.
Well proved CSTBT (Carrier Stored Trench Bipolar
Transistor) chip technology for IGBT (Insulated Gate
Bipolar Transistor) shows better trade-off of
saturation voltage and turn-off losses providing
suitable modules for a broad spectrum of application
fields including motor control, traction, elevators,
welding, UPS, white goods, pumps and medical
technology. Dedicated IGBT & IPM modules have
also attracted renewable energy applications such
as wind and solar energy. Mitsubishi Electric power
semiconductors ensure greater efficiency and lower
power consumption. With better process and chip
technology, the highest level of reliability is achieved
in high voltage IGBT modules used for traction and
Power Transmission & Distribution applications.
The market trend towards more compact modules
with high efficiency has been continuously pursued
by Mitsubishi Electric. The compact package of
Mini-DIP and Super Mini-DIP proved cost effective
products for white goods applications.
Through eco-products (RoHS confirmed), environmental technologies and activities, Mitsubishi Electric
is working together with its global business partners,
to make the world a better place to live. A future
aim of Mitsubishi Electric emphasizes on the best
utilization and development of new materials and
process to offer more compact products at an
affordable price with environmental features.
Eco Changes is the Mitsubishi Electric Group‘s environmental
statement and expresses the Group‘s stance on environmental
management. Through a wide range of technologies and businesses
for homes, offices, factories, infrastructure and even outer space,
Mitsubishi Electric is striving to contribute to a sustainable society.
www.ecochanges.eu
3
1
IGBT Modules
2
IPM (Intelligent Power Modules)
3
MOSFET Modules
4
High Voltage Devices
5
High Voltage Integrated Circuits (HVIC)
6
Power Loss Calculation Tool (Melcosim)
MITSUBISHI ELECTRIC EUROPE B.V.
1.
IGBT Modules
1.01 Ordering Information for Mitsubishi IGBT Modules. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.02 Overview of IGBT Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.036th Generation IGBT Modules NX-Package (S-Series, S1-Series, SA-Series). . . . . . . . . .
1.046th Generation IGBT Modules Standard-Package (S-Series) and Mega Power Dual. . . . 1.056th Generation IGBT Modules New Mega Power Dual Package (S-Series) . . . . . . . . . . . 1.065th Generation IGBT Modules Standard-Package (A-Series). . . . . . . . . . . . . . . . . . . . . . . 1.075th Generation IGBT Modules Standard-Package (NF-Series) . . . . . . . . . . . . . . . . . . . . . 1.08 AC Switch for 3-Level Applications (Common Collector Module) . . . . . . . . . . . . . . . . . . 1.09 High Frequency IGBT Modules (NFH-Series) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8
10
16
18
20
23
27
29
2.
IPM (Intelligent Power Modules)
2.01 Ordering Information for Mitsubishi IPMs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.02 Overview of IPM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.035th Generation CSTBTTM IPMs (V1-Series). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.045th Generation CSTBTTM IPMs (L1 & S1-Series). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.055th Generation CSTBTTM IPMs (L-Series). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.065th Generation IPMs for Photovoltaic Application. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.07 Overview of DIPIPMTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08 Large DIPIPMTM Ver. 4 for Photovoltaic Application. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.09 1200V DIPIPMTM (Dual-in-line Package Intelligent Power Modules). . . . . . . . . . . . . . . . . 2.10500V Super Mini MOS DIPIPMTM Ver. 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.11600V Super Mini DIPIPMTM Ver. 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.12 600V Large DIPIPMTM Ver. 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.13 600V Industrial Mini DIPIPMTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.14 Mini DIPPFCTM (Dual-in-line Package Power Factor Correction). . . . . . . . . . . . . . . . . . . . 32
33
34
36
40
42
44
45
47
49
51
53
55
57
3.
MOSFET Modules. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
4.
High Voltage Devices
4.01 High Voltage IGBT Modules (HVIGBT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
4.02 High Voltage Diode Modules. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.
High Voltage Integrated Circuits (HVIC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
6.
Power Loss Calculation Tool (Melcosim). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Authorised Distributors for Mitsubishi Electric Power Semiconductors. . . . . . . . . . . . . . 76
All contents and specifications are subject to modifications and amendments without notice. May 2014.
1
Symbols
1
Description
VCES
IC
VCEsat
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
td(on)
Turn-on delay time
t r
td(off)
tf
ton
tc(on)
toff
tc(off)
Turn-off crossover time
VF
Diode forward voltage
Qrr
Diode reverse recovery charge
trr
Diode reverse recovery time
Rth(j-c)
Thermal resistance – junction to case
Rth(c-s)
Contact thermal resistance – case to heat sink
Visol
Isolation voltage
VDSS
Maximum drain source sustain voltage
ID(rms)
Maximum RMS drain current
rDS(on)
Drain source on-state resistance
VSD
Reverse diode forward voltage
EON
Turn-on switching energy
EOFF
Turn-off switching energy
fc(typ)
Maximum collector emitter voltage
Collector current
Collector emitter saturation voltage
Turn-on rise time
Turn-off delay time
Turn-off fall time
Turn-on time
Turn-on crossover time
Turn-off time
Recommended typical PWM frequency
fc / fPWM tDEAD
Minimum dead time
VRRM
Repetitive peak reverse voltage
IF
IFSM
6
Maximum PWM frequency
Diode forward current
Diode surge forward current
1.01
Ordering Information for Mitsubishi IGBT Modules
S-Series, S1-Series and SA-Series
1 IGBT
S-Series, S1-Series and SA-Series are the latest
development of Mitsubishi Electric’s state of the art
6th Generation Carrier Stored Trench Gate Biploar
Transistor (CSTBTTM) and diode chip technology,
offering flexible package concept using common
platform for dual, six- and seven-packs and CIB
(Converter-Inverter-Brake). The comprehensive lineup in 1200V and 1700V of the S-Series, S1-Series
and SA-Series ensures 175°C as Tj(max).
New Mega Power Dual
New Mega Power Dual combines advantages of
new 6th Generation CSTBTTM IGBT chip performance
and mechanical package structure for easy assembly.
1200V and 1700V line-ups are available.
NF- and A-Series
Combining 5th Generation CSTBTTM-chip technology
with a Light Punch-through (LPT) wafer, low VCEsat,
high short circuit robustness and reduced gate
capacitance are achieved.
2 IC = 1800A
3 Internal Connection:
H
= Single IGBT Module
D
= Dual IGBT Module
B
= H-Bridge IGBT Module
T
= Sixpack IGBT Module
R
= Sevenpack IGBT Module
E2 = Back Converter IGBT Module
E3 = Boost Converter IGBT Module
1
4 Package Style:
A
B
U
X
Y
5 VCES:
NFH-Series
Combines CSTBTTM chip technology with adopted
lifetime control providing excellent switching losses
optimised for high frequency switching at 50kHz.
12
= 600V
24
= 1200V 34
= 1700V
6 Chip Technology:
S/S1/SA
=
6th Generation
NF/A
=
5th Generation
NFH
=
5th Generation
(High Frequency)
Example:
CM
1800
D
Y
1
2
3
4
–
34
S
5
6
7
1.02
Overview of IGBT Modules
6th Generation
NX-Package (S-Series, S1-Series, SA-Series)
CIB
1200V
35A-100A
1700V
Dual
6-pack
7-pack
1
Chopper
Modules
75A
1200V
150A-1000A
1700V
150A-600A
1200V
75A-150A
1200V
75A-200A
1700V
75A-150A
1200V
150A-300A
1700V
200A
Standard-Package (S-Series)
Dual
1200V
Dual
(MPD)
300A-800A
900A
1200V
1400A
1000A
1700V
New Mega Power Dual Package (S-Series)
Dual
(New MPD)
2500A
1200V
1800A
1700V
35
8
75
100
150
200
300
600
800 900
1000
1400
1800
2500A
1.02
Overview of IGBT Modules
5th Generation
Standard-Package (A-Series)
Single
Dual
1200V
400A-600A
1700V
500A
100A-600A
1200V
1700V
75A-400A
Standard-Package (NF-Series)
Dual
600V
150A-600A
1200V
1
75A-1400A
1700V
6-pack
1000A
75A-200A
600V
1200V
7-pack
50A-200A
75A-200A
600V
1200V
50A-200A
NFH-Series (High Frequency)
Dual
600V
100A-600A
1200V
100A-600A
50
75 100
150
200
400
500
600
1000
1400A
9
1.03
6th Generation IGBT Modules
NX-Package (S-Series, S1-Series, SA-Series)
Applications
1
•General Purpose Drives
•Photovoltaic Inverters
•UPS
Features
•6th Generation IGBT with CSTBTTM Chip Technology
•Auxiliary C-terminal available for N-side IGBT
•Excellent thermal conductivity by AlN isolation substrate
•For 1200V modules: VCEsat (Chip) = 1.7V(typ) @ Tj = 25°C;
wide SOA @ Vcc = 850V
•For 1700V modules: VCEsat (Chip) = 2.1V(typ) @ Tj = 25°C;
wide SOA @ Vcc = 1200V
•More than 10µs short circuit capability and excellent
paralleling characteristics
•New Free Wheel Diode Chip with optimised trade-off
between VF and Err
•Tj(max) = 175°C
•Comprehensive line-up in 1200V, 1700V
10
1.036th Generation IGBT Modules NX-Package
(S-Series, S1-Series, SA-Series)
Line-up NX-Package
VCES
IC (A)
Symbol
Circuit Diagram
(V)
150
200/225 300
450
600 1000
CM150DX-24S CM200DX-24SCM300DX-24SCM450DX-24S
CM600DXL-24S*
CM1000DXL-24S*
1200
CM225DX-24S1CM300DX-24S1CM450DX-24S1CM600DX-24S1
D
(2 in 1)
1700 CM150DX-34SA CM200DX-34SA CM300DX-34SACM450DXL-34SA*CM600DXL-34SA*
VCES
Symbol
Circuit Diagram
(V)
35
IC (A)
50
75
100 150 200
1200 CM35MXA-24S CM50MXA-24S CM75MXA-24SCM100MXA-24S
M
(CIB)
1700
CM75MXA-34SA**
CM75RX-24S CM100RX-24SCM150RX-24S
1200
CM100RX-24S1CM150RX-24S1 CM200RXL-24S*
R
(7 in 1)
1700
CM75RX-34SA
CM150RXL-34SA*
CM75TX-24S CM100TX-24SCM150TX-24S
1200
CM100TX-24S1CM150TX-24S1
T
(6 in 1)
1700
VCES
Symbol
Circuit Diagram
(V)
EX
1200
IC (A)
150
CM150EXS-24S
1700
200
CM200EXS-24S
300
CM300EXS-24S
CM200EXS-34SA
*Large package type (122mm x 122mm)
**Rectifier Diode 1800V max.
Extentions Type Number:
-S: S-Series g see page 12
-S1:S1-Seriesg see page 12
-SA:SA-Seriesg see page 13
11
1
1.03A6th Generation IGBT Modules NX-Package (S-Series)
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat (Chip)
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Free Wheel Diode
(Tj = 25°C)
VF
(Chip)
Maximum Switching Times
td(on)
Typ. Max. Max. Max. Max. (ns)
tr
(ns)
td(off)
(ns)
(V)
tf
(ns)
Qrr
(µC)
trr
(ns)
Typ. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
1200 Volt Dual IGBT Modules NX6-Series (CIB)
CM35MXA-24S 12003525001.72.153.50.70.06300 200 600 300 1.71.93000.420 0.690 0.015 NX1
CM50MXA-24S 12005025001.72.155.01.00.08300 200 600 300 1.72.73000.350 0.630 0.015 NX1
CM75MXA-24S 12007525001.72.157.51.50.13300 200 600 300 1.74.03000.250 0.400 0.015 NX1
CM100MXA-24S12001002500 1.72.15 10 2.00.17300 200 600 300 1.7 5.3 300 0.200 0.290 0.015 NX1
1200 Volt IGBT Modules NX6-Series (7 in 1)
CM75RX-24S 12007525001.72.157.51.50.13300 200 600 300 1.74.03000.250 0.400 0.015 NX2
CM100RX-24S 12001002500 1.72.15 10 2.00.17300 200 600 300 1.7 5.3 300 0.200 0.290 0.015
NX2
CM150RX-24S 12001502500 1.72.15 15 3.00.25800 200 600 300 1.7 8.0 300 0.130 0.230 0.015
NX2
CM200RXL-24S 12002004000 1.82.25 20 4.00.33800 200 600 300 1.810.7300 0.100 0.190 7.000
NX9
1200 Volt IGBT Modules NX6-Series (6 in 1)
CM75TX-24S
12007525001.72.157.51.50.13300 200 600 300 1.74.03000.250 0.400 0.015 NX3
CM100TX-24S 12001002500 1.72.15 10 2.00.17300 200 600 300 1.7 5.3 300 0.200 0.290 0.015
NX3
CM150TX-24S 12001502500 1.72.15 15 3.00.25800 200 600 300 1.7 8.0 300 0.130 0.230 0.015
NX3
1200 Volt IGBT Modules NX6-Series (2 in 1)
1
CM150DX-24S 12001502500 1.72.15 15 3.00.25800 200 600 300 1.7 8.0 300 0.130 0.230 0.015
NX4
CM200DX-24S 12002002500 1.72.15 20 4.00.33800 200 600 300 1.710.7300 0.100 0.190 0.015
NX4
CM300DX-24S 12003002500 1.72.15 30 6.0 0.5 800 200 600 300 1.7 16 300 0.066 0.120 0.015
NX4
CM450DX-24S 12004502500 1.72.15 45 9.00.75800 200 600 300 1.7 24 300 0.044 0.078 0.015
NX4
CM600DXL-24S 12006002500 1.72.15 60 12 1.00800 200 600 300 1.7 32 300 0.033 0.063 0.007
NX5
CM1000DXL-24S12009002500 1.72.15100 20 1.70800 200 600 300 1.753.3300 0.020 0.038 0.007
NX5
1200 Volt IGBT Modules (Chopper)
CM150EXS-24S
1200 150 4000 1.85 2.25 15
3.0 0.25 800
200
600
300 1.85
8.0 300 0.130
0.230
0.025
NXS
CM200EXS-24S 120020040001.852.25 20 4.00.33800 200 600 300 1.8510.7300 0.100 0.190 0.025
NXS
CM300EXS-24S 120030040001.852.25 30 6.00.50800 200 600 300 1.8516.0300 0.065 0.115 0.025
NXS
1.03B6th Generation IGBT Modules NX-Package (S1-Series)
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat (Chip)
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Free Wheel Diode
(Tj = 25°C)
Maximum Switching Times
td(on)
Typ. Max. Max. Max. Max. (ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
(Chip)
(V)
Qrr
(µC)
trr
(ns)
Typ. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
1200 Volt IGBT Modules NX6-Series (7 in 1)
CM100RX-24S1 12001004000 1.72.15 10 2.00.17300 200 600 300 2.505.0 300 0.240 0.370 0.015
NX6
CM150RX-24S1 12001504000 1.72.15 15 3.00.25800 200 600 300 2.506.0 300 0.160 0.260 0.015
NX6
1200 Volt IGBT Modules NX6-Series (6 in 1)
CM100TX-24S1 12001004000 1.72.15 10 2.00.17300 200 600 300 2.505.0 300 0.240 0.370 0.015
NX7
CM150TX-24S1 12001504000 1.72.15 15 3.00.25800 200 600 300 2.506.0 300 0.160 0.260 0.015
NX7
1200 Volt IGBT Modules NX6-Series (2 in 1)
CM225DX-24S1 1200 225 4000 1.8 2.25 20
4.0 0.33 800
200
600
300 2.65
8.0 300 0.120
0.180
0.015
NX8
CM300DX-24S1 1200 300 4000 1.7 2.15 30
6.0 0.50 800
200
600
300 2.50
8.0 300 0.081
0.130
0.015
NX8
CM450DX-24S1 1200 450 4000 1.7 2.15 45
9.0 0.75 800
200
600
300 2.50 14.0 300 0.054
0.086
0.015
NX8
CM600DX-24S1 12006004000 1.92.35 50 10.00.84800 200 600 300 2.7024.0300 0.045 0.072 0.015
12
NX8
1.03C6th Generation IGBT Modules NX-Package (SA-Series)
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat (Chip)
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Free Wheel Diode
(Tj = 25°C)
Maximum Switching Times
td(on)
Typ. Max. Max. Max. Max. (ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
(Chip)
(V)
Qrr
(µC)
trr
(ns)
Typ. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
1700 Volt IGBT Modules NX6-Series (CIB)
CM75MXA-34SA17007540001.92.4  201.60.362001007006004.0  2.0200 0.180 0.270
15
NX6
15
NX6
CM150RXL-34SA*1700 150 4000 1.9 2.4 40 3.3 0.73 400 100 700 600 4.0 5.0 300 0.100 0.160 7
NX9
1700 Volt IGBT Modules NX6-Series (7 in 1)
CM75RX-34SA 1700 75 4000 1.9 2.4 20 1.6 0.36 200 100 700 600 4.0 2.0 200 0.18
0.207
1700 Volt IGBT Modules NX6-Series (2 in 1)
CM150DX-34SA 1700 150 4000 1.9 2.4 40 3.3 0.73 400 100 700 600 4.0 5.0 300 0.100 0.160
15
CM200DX-34SA 1700 200 4000 1.9 2.4 53 4.3 0.97 400 100 700 600 4.0 8.0 300 0.075 0.120
15
NX7
NX7
CM300DX-34SA 1700 300 40001.92.4 
796.51.505001008006004.011.03000.0500.080 15
NX7
CM450DXL-34SA*1700 450 40001.92.41199.82.209001509004004.017.03000.0340.052 
7
NX5
CM600DXL-34SA*1700 600 40001.92.4158132.909001509004004.023.03000.0260.039 
7
NX5
1700 Volt IGBT Modules (Chopper)
CM200EXS-34SA17002004000 2.2 2.7   351.50.35400   706006004.110.02000.0750.1200.025 NXS
*Large package type (122mm x 122mm)
1.03 6th Generation NX-Package types
Package NX1
Package NX2
Package NX3
Package NX4
1
Dimensions in mm
13
1.03 6th Generation NX-Package types
Package NX5
Package NX6
1
Package NX7
Dimensions in mm
14
1.03 6th Generation NX-Package types
Package NX8
Package NX9
1
Package NXS
Dimensions in mm
15
1.04
6th Generation IGBT Modules
Standard-Package (S-Series) and Mega Power Dual
Applications
1
• General Purpose Drives
• Photovoltaic Inverters
• UPS
Features
• 6th Generation IGBT with CSTBTTM
Chip Technology
• Excellent thermal conductivity
by AlN isolation substrate
• More than 10µs short circuit capability
and excellent paralleling characteristics
• New Free Wheel Diode Chip with
optimised trade-off between VF and Err
• Tj(max) = 175°C
Line-up Standard-Package
Symbol
Circuit
Diagram
IC (A)
VCES
(V)
300
400
600
800
900
1200
CM300DY-24S
CM450DY-24S
CM600DY-24S
CM800DY-24S
CM900DUC-24S
1000
CM1400DUC-24S
D
(2 in 1)
1700
16
1400
CM1000DUC-34S
1.046th Generation IGBT Modules Standard-Package (S-Series) and MPD
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat (Chip)
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Maximum Switching Times
td(on)
Typ. Max. Max. Max. Max. (ns)
Free Wheel Diode
(Tj = 25°C)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
(Chip)
(V)
Qrr
(µC)
trr
(ns)
Typ. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
0.120
0.020
PackageNo.
1200/1700 Volt IGBT Modules (2 in 1)
CM300DY-24S
1200 300 2500 1.85 2.25
30
6.0 0.50 800
200
600 300 1.85 16.0 300 0.066
NF2
CM450DY-24S
1200 450 2500 1.85 2.25
45
9.0 0.75 800
200
600 300 1.85 24.0 300 0.045
0.068
0.018
NF3
CM600DY-24S
1200 600 2500 1.85 2.25
60 12.0 1.00 800
200
600 300 1.85 32.0 300 0.037
0.060
0.018
NF3
CM800DY-24S
1200 800 2500 1.95 2.40
80 16.0 1.32 800
200
600 300 1.85 42.8 300 0.028
0.045
0.015
NF6
CM900DUC-24S
1200 900 2500 1.55 1.90
90 18.0 1.50 900
250
950 350 1.65 50.0 450 0.023
0.039
0.006
MPD
CM1400DUC-24S 1200 1400 2500 1.55 1.90 150 30.0 2.50 900
250
950 350 1.65 90.0 450 0.016
0.026
0.006
MPD
CM1000DUC-34SA 170010004000 1.902.40 260 27.05.00 900 350 1250 400 4.00270.0400 0.015 0.024 0.006
Package NF2
MPD
Package NF3
1
Package NF6
Package MPD
Dimensions in mm
17
1.05
6th Generation IGBT Modules
New Mega Power Dual Package (S-Series)
Applications
1
•Renewable Energy
•High Power Energy Conversion
•Medium Voltage Drives
Features
•6th Generation IGBT with CSTBTTM Chip Technology
•For 1200V modules: VCEsat (Chip) = 1.7V(typ) @ Tj = 25°C;
wide SOA @ Vcc = 850V
•For 1700V modules: VCEsat (Chip) = 2.1V(typ) @ Tj = 25°C;
wide SOA @ Vcc = 1200V
•Tj(max) = 175°C
•New solderless lightweight Al-baseplate
––> high ∆Tc temperature cycling capability
•Wide internal chip layout ––> low Rth(j-f)
•Minimized internal package inductance LPN = 5.25nH
•AC and DC main terminals separated ––> easy DC-bus
design
•Multi-hole main terminals ––> low contact resistance and
reliable long-term electrical connection
•Integrated NTC for Tc-sensing
•Auxiliary C-terminals available for P- and N-side IGBT
18
For
Dual
P
Mega ower
s (S-Series)
IGBT Module
to
please refer
16
e
g
pa
1.056th Generation IGBT Modules New MPD Package (S-Series)
Line-up New MPD
IC (A)
VCES
Symbol
Circuit Diagram
(V)
18002500
1200
CM2500DY-24S
D
1700
CM1800DY-34S
New MPD Package
1
Dimensions in mm
Remark: Mega Power Dual IGBT Modules with 6th Gen. IGBT Chips see page 16.
19
1.06
5th Generation IGBT Modules
Standard-Package (A-Series)
Features
1
•Combining 5th Generation CSTBTTM
(Carrier Stored Trench Gate Bipolar
Transistor) chip technology with a
LPT (Light Punch-through) wafer for:
– Low VCEsat
– High Short Circuit Robustness
– Reduced Gate Capacitance
•Excellent thermal conductivity by
AIN isolation substrate
•Low internal inductance
20
1.065th Generation IGBT Modules Standard-Package (A-Series)
Line-up A-Series
IC (A)
VCES
Circuit
Symbol
Diagram (V)
75 100150200300400500600800
CM600HA-24A
1200
CM400HA-24A
CM600HB-24A
H
1700
CM500HA-34A
1200CM100DY-24A
CM150DY-24ACM200DY-24ACM300DY-24ACM400DY-24ACM600DY-24A
D
1700 CM75DY-34A CM100DY-34ACM150DY-34ACM200DY-34ACM300DY-34ACM400DY-34A
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Free Wheel Diode
(Tj = 25°C)
Maximum Switching Times
td(on)
Typ. Max. Max. Max. Max. (ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
(V)
Qrr
(µC)
trr
(ns)
Max. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
1200 Volt Dual IGBT Modules A-Series
CM100DY-24A 12001002500 2.1 3.017.5 1.50.34100 70 400 350 3.8 5.0 150 0.186 0.340 0.022
A1
CM150DY-24A 12001502500 2.1 3.023.0 2.00.45130 100 450 350 3.8 6.0 150 0.130 0.230 0.022
A1
CM200DY-24A 12002002500 2.1 3.035.0 3.00.68130 100 450 350 3.8 9.0 150 0.093 0.170 0.022
A1
CM300DY-24A 12003002500 2.1 3.047.0 4.00.90550 180 600 350 3.8 9.0 250 0.066 0.120 0.020
A2
CM400DY-24A 12004002500 2.1 3.070.0 6.01.40550 180 600 350 3.816.0250 0.046 0.085 0.020
A3
CM600DY-24A 12006002500 2.1 3.094.0 8.01.80660 190 700 350 3.819.0250 0.034 0.062 0.018
A3
1200 Volt Single IGBT Modules A-Series
CM400HA-24A 12004002500 2.1 3.0 70 6.01.40550 180 600 350 3.814.7250 0.053 0.080 0.020
A4
CM600HA-24A 12006002500 2.1 3.0 105 9.02.00660 190 700 350 3.819.0250 0.034 0.053 0.020
A4
CM600HB-24A 12006002500 2.1 3.0 105 9.02.00660 190 700 350 3.819.0250 0.034 0.053 0.015
A5
1700 Volt Dual IGBT Modules A-Series
CM75DY-34A
17007535002.22.818.52.10.4200 150 550 350 3.07.53000.160 0.290 0.022
A1
CM100DY-34A 17001003500 2.2 2.824.7 2.80.53200 150 550 350 3.0 10 300 0.130 0.210 0.022
A1
CM150DY-34A 17001503500 2.2 2.837.0 4.2 0.8 550 190 750 350 3.0 15 450 0.078 0.150 0.020
A2
CM200DY-34A 17002003500 2.2 2.849.4 5.61.06550 190 750 350 3.0 20 450 0.063 0.110 0.020
A2
CM300DY-34A 17003003500 2.2 2.874.0 8.4 1.6 600 200 850 350 3.0 30 450 0.043 0.072 0.020
A3
CM400DY-34A 17004003500 2.2 2.898.811.22.12950 300 1000 350 3.0 40 450 0.033 0.055 0.019
A6
1700 Volt Single IGBT Modules A-Series
CM500HA-34A 17005003500 2.3 3.0 120 14 2.6 900 500 1200 350 3.2 50 650 0.025 0.042 0.015
A4
21
1
1.065th Generation IGBT Modules Standard-Package (A-Series)
Package A1
Package A2
Package A3
Package A4
Package A5
Package A6
1
Dimensions in mm
22
1.07
5th Generation IGBT Modules
Standard-Package (NF-Series)
Features
1
•Combining 5th Generation CSTBTTM (Carrier Stored
Trench Gate Bipolar Transistor chip technology
with a LPT (Light Punch-through) wafer for:
–L
ow VCEsat
(Typ. 1.7V @ Tj = 125°C for 600V and
2V @ Tj = 125°C for 1200V)
– High Short Circuit Robustness
– Reduced Gate Capacitance
•Standard dual package equal to well
accepted H-Series package
•Excellent thermal conductivity by
AIN isolation substrate
•Low internal inductance (half of H-Series)
•Also available as Mega Power Dual IGBT Modules
1200V (900 & 1400A) and 1700V (1000A) for
High Power UPS, Distributed Power Generation
and General Purpose Inverters
(Chopper modules on request)
23
1.075th Generation IGBT Modules Standard-Package (NF-Series)
Line-up NF-Series
IC (A)
VCES
Circuit Diagram
Symbol
(V)
50 75 100150200
D
600
CM150DY-12NFCM200DY-12NF
1200
CM75DY-24NFCM100DY-24NFCM150DY-24NFCM200DY-24NF
T
600
1200CM50TL-24NF CM75TL-24NF CM100TL-24NFCM150TL-24NFCM200TL-24NF
600
CM75RL-12NFCM100RL-12NFCM150RL-12NFCM200RL-12NF
R
1
CM75TL-12NF CM100TL-12NFCM150TL-12NFCM200TL-12NF
1200CM50RL-24NF CM75RL-24NF CM100RL-24NFCM150RL-24NFCM200RL-24NF
IC (A)
VCES
Circuit
Symbol
(V)
Diagram
30040060090010001400
600CM300DY-12NFCM400DY-12NFCM600DY-12NF
D1200
CM300DY-24NFCM400DY-24NF CM600DU-24NFCM900DUC-24NF*
CM1400DUC-24NF*
1700
CM1000DUC-34NF*
*Mega Power Dual IGBT Modules (NF-Series). Chopper Modules for 1000A/1700V and 1400A/1200V available.
Mega Power Dual IGBT Modules with 6th Gen. IGBT chips (S-Series) see page 17.
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Typ. Max. Max. Max. Max.
Free Wheel Diode
(Tj = 25°C)
Maximum Switching Times
td(on)
(ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
trr
Qrr
(V) (µC) (ns)
Max. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
600 Volt IGBT Modules NF-Series (2 in 1)
CM150DY-12NF 60015025001.72.2 23 2.80.9120 100 300 3002.62.51500.160 0.290 0.02
NF1
CM200DY-12NF 60020025001.72.2 30 3.71.2120 120 300 3002.63.51500.130 0.220 0.02
NF1
CM300DY-12NF 60030025001.72.2 45 5.51.8120 120 350 3002.65.51500.093 0.160 0.02
FN1
CM400DY-12NF 60040025001.72.2 60 7.32.4300 200 450 3002.66.82500.066 0.110 0.02
NF2
CM600DY-12NF 60060025001.72.290 113.65003007503002.68.72500.0460.078 0.02 NF3
600 Volt IGBT Modules NF-Series (6 in 1)
CM75TL-12NF
600 75 25001.7 2.211.31.40.45120 100 300 300 2.8 1.2 100 0.29 0.510 0.085
NF4
CM100TL-12NF 60010025001.72.2 15 1.90.6120 100 300 3002.82.1120 0.23 0.410 0.085 NF4
CM150TL-12NF 60015025001.72.2 23 2.80.9120 100 300 3002.82.5150 0.17 0.310 0.085 NF4
CM200TL-12NF 60020025001.72.2 30 3.71.2120 100 300 3002.84.8150 0.14 0.220 0.051 NF5
24
1.075th Generation IGBT Modules Standard-Package (NF-Series)
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Typ. Max. Max. Max. Max.
Free Wheel Diode
(Tj = 25°C)
Maximum Switching Times
td(on)
(ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
trr
Qrr
(V) (µC) (ns)
Max. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K /W)
Typ.
PackageNo.
600 Volt IGBT Modules NF-Series (6 in 1)
CM75RL-12NF
600 75 25001.7 2.211.31.40.45120 100 300 300 2.8 1.2 100 0.290 0.510 0.085
NF4
CM100RL-12NF 60010025001.72.2 15 1.90.6120 100 300 3002.82.11200.230 0.410 0.085 NF4
CM150RL-12NF 60015025001.72.2 23 2.80.9120 100 300 3002.82.51500.170 0.310 0.085 NF4
CM200RL-12NF 60020025001.72.2 30 3.71.2120 100 300 3002.84.81500.140 0.220 0.051 NF5
1200 Volt Dual IGBT Modules NF-Series (2 in 1)
CM75DY-24NF 1200 75 25001.8 2.517.51.50.34120 100 450 350 3.2 5.0 150 0.200 0.300 0.022
NF1
CM100DY-24NF 12001002500 1.8 2.5 23 2.00.45 120 80 450 350 3.2 5.0 150 0.130 0.230 0.022
NF1
CM150DY-24NF 12001502500 1.8 2.5 35 3.00.68 120 80 450 350 3.2 7.5 150 0.093 0.170 0.022
NF1
CM200DY-24NF 120020025001.82.5 47 4.00.9500 150 600 3503.27.52500.066 0.120 0.020 NF2
CM300DY-24NF 120030025001.82.5 70 6.01.4500 150 600 3503.2 132500.046 0.085 0.018 NF3
CM400DY-24NF 120040025001.82.5 94 8.01.8600 160 700 3503.2 162500.034 0.062 0.018 NF3
CM600DU-24NF12006002500
1.95
2.65140122.78001809003503.35283000.0250.0420.015 NF6
CM900DUC-24NF
120090025001.82.514016 3.0600 200 800 3003.2 505000.021 0.034 0.012 MPD
CM1400DUC-24NF1200
1400
25001.82.522025 4.7800 30010003003.2 907000.014 0.023 0.012 MPD
1200 Volt IGBT Modules NF-Series (6 in 1)
1
CM50TL-24NF 12005025002.13.08.50.750.17100 50 300 3503.82.01000.320 0.430 0.085 NF4
CM75TL-24NF 1200 75 25002.1 3.011.51.00.23100 50 300 350 3.8 3.0 120 0.240 0.360 0.085
NF4
CM100TL-24NF 120010025002.1 3.017.51.50.34100 70 300 350 3.8 4.8 150 0.200 0.280 0.085
NF4
CM150TL-24NF 12001502500 2.1 3.0 23 2.00.45 130 70 400 350 3.8 5.8 150 0.140 0.230 0.051
NF5
CM200TL-24NF 12002002500 2.1 3.1 35 3.00.68 130 70 400 350 3.8 9.0 150 0.110 0.170 0.051
NF5
1200 Volt IGBT Modules NF-Series (7 in 1)
CM50RL-24NF 12005025002.13.08.50.750.17100 50 300 3503.82.01000.320 0.430 0.085 NF4
CM75RL-24NF 1200 75 25002.1 3.011.51.00.23100 50 300 350 3.8 3.0 120 0.240 0.360 0.085
NF4
CM100RL-24NF 120010025002.1 3.017.51.50.34100 70 300 350 3.8 4.8 150 0.200 0.280 0.085
NF4
CM150RL-24NF 12001502500 2.1 3.0 23 2.00.45 130 70 400 350 3.8 5.8 150 0.140 0.230 0.051
NF5
CM200RL-24NF 12002002500 2.1 3.1 35 3.00.68 130 70 400 350 3.8 9.0 150 0.110 0.170 0.051
NF5
1700 Volt Dual IGBT Modules NF-Series (2 in 1)
CM1000DUC-34NF1700
1000
35002.22.822025 4.7600 20010003003.0 905000.014 0.023 0.012 MPD
* Measurement point of case temperature (Tc) is side of base plate. Please refer to package outline.
Package NF1
Package NF2
Dimensions in mm
25
1.075th Generation IGBT Modules Standard-Package (NF-Series)
Package NF3
Package NF4
Package NF5
Package NF6
Package MPD
Notes
1
Dimensions in mm
26
1.08
AC Switch for 3-Level Applications (Common Collector Module)
Applications
1
•UPS
•Photovoltaic Inverters
•Motor Control
Features
•6th Generation IGBT with CSTBTTM Chip Technology
•VCEsat (Chip) = 1.7V(typ) @ Tj = 25°C;
wide SOA @ Vcc = 850V
•Tj(max) = 175°C
•New Free Wheeling Diode Chip with optimised trade-off
between VF and Err
•Rating 400A/1200V
•Low internal inductance
•Excellent thermal conductivity by AIN isolation substrate
27
1.08 AC Switch for 3-Level Applications (Common Collector Module)
Electrical Characteristics
(Tj = 25°C)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat (Chip)
(V)
Cies
(nF)
Coes
(nF)
Cres
(nF)
Free Wheel Diode
(Tj = 25°C)
Maximum Switching Times
td(on)
Typ. Max. Max. Max. Max. (ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
(Chip)
(V)
Qrr
(µC)
trr
(ns)
Typ. Typ. Max.
Thermal
Characteristics
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
AC Power Switch for 3-Level Applications
CM400C1Y-24S 12004002500 1.72.15 40 8.00.66800 200 600 300 1.721.4300 0.056 0.095 0.018
AC Switch Topology
CM400C1Y-24S
A3
Circuit Diagram
Standard
Dual Module
e. g. CM450DY-24S
1
Package A3
Dimensions in mm
28
1.09
High Frequency IGBT Modules (NFH-Series)
Features
•Super low turn-off switching losses by combining
Carrier Stored Trench Gate Bipolar Transistor
(CSTBTTM) chip technology with adopted lifetime
control
•Optimised for high frequency switching at 50kHz
•Excellent performance also in soft switching
applications (resonant mode)
•Low internal inductance package
•Significant improvement of power cycling capability
1
Line-up NFH-Series
IC (A)
Circuit
VCES
Symbol
Diagram
(V)
100150200300400600
D
600 CM100DUS-12F CM150DUS-12F CM200DU-12NFHCM300DU-12NFHCM400DU-12NFHCM600DU-12NFH
1200CM100DU-24NFHCM150DU-24NFHCM200DU-24NFHCM300DU-24NFHCM400DU-24NFHCM600DU-24NFH
29
1.09 High Frequency IGBT Modules (NFH-Series)
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
Free Wheel Diode
(Tj = 25°C)
Electrical Characteristics
(Tj = 25°C)
VCEsat
(V)
Cies
(nF)
Typ. Max. Max.
Coes
(nF)
Cres
(nF)
Max. Max.
Maximum Switching Times
td(on)
(ns)
tr
(ns)
td(off)
(ns)
tf
(ns)
VF
(V)
Qrr
(µC)
trr
(ns)
Max.
Typ.
Max.
Thermal
Characteristics*
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Rth(c-s)
(K/W)
Typ.
PackageNo.
600 Volt IGBT Modules NFH-Series
CM100DUS-12F6001002.02.727 1.81.0100803001502.61.91500.3500.70090.022 NFH1
CM150DUS-12F 600150 2.02.7 41 2.7 1.5 120100350150 2.6 2.8 1500.2400.4700.022 NFH1
CM200DU-12NFH600200 2.02.7 55 3.6 2.0 250150500150 2.6 3.5 1500.2100.3500.022 NFH1
CM300DU-12NFH600300 2.02.7 83 5.4 3.0 350150700150 2.6 5.5 2000.1600.2400.020 NFH2
CM400DU-12NFH6004002.02.71107.2 4.04002007001502.6 7.72000.1300.1800.020 NFH2
CM600DU-12NFH600600 2.02.7166 11 6.0 650250800150 2.6 11 2000.1100.1200.018 NFH3
1200 Volt IGBT Modules NFH-Series
CM100DU-24NFH
1200
1005.06.516 1.30.3100502501503.55.01500.1700.2900.022 NFH1
CM150DU-24NFH
1200
1505.06.524 2.00.5150804001503.57.51500.1300.2100.022 NFH1
CM200DU-24NFH
1200
2005.06.532 2.70.6300805001503.57.52500.0950.1400.020 NFH2
CM300DU-24NFH
1200
3005.06.547 4.00.9300805001503.5 132500.0660.1000.020 NFH2
1
CM400DU-24NFH
1200400 5.06.5 63 5.3 1.2 300100500150 3.5 16 2500.0510.0930.018 NFH3
CM600DU-24NFH
1200600 5.06.5 95 8.0 1.8 400120700150 3.5 28 2500.0340.0600.018 NFH3
* Measurement point of case temperature (Tc) is side of base plate. Please refer to package outline.
Comparison of Turn-off Waveform
30
Circuit Diagram
1.09 High Frequency IGBT Modules (NFH-Series)
Package NFH1
Package NFH2
1
Package NFH3
Dimensions in mm
31
2.01
Ordering Information for Mitsubishi IPMs
Information:
1 IPM
The Intelligent Power Module was first developed
and mass-produced by Mitsubishi Electric assuming
the leadership in the industry for this technology.
The reliability of our IPMs is proven since many years
of experience in volume production.
The latest L1-Series IPM incorporates CSTBT IGBT
chip for loss performance keeping the mechanical
compatibility with existing L-Series IPM family. It also
introduces a new small S package for 600V and
1200V (Reduced package size by 32% of existing
L-Series IPM).
TM
L-Series: Employing 5th Generation Carrier Stored
Trench Gate Bipolar Transistor (CSTBTTM) chip
technology for good loss performance. Featuring
on-chip temperature sensing for all IGBT chips.
2 IC = 300A
3 Internal Connection:
D
= Dual IPM
B
= H-Bridge
C
= Sixpack IPM
R
= Sevenpack IPM
4 Series Name:
V1 = V1-Series
L
= L-Series
L1 = L1-Series
2
V1-Series is a new intelligent power module (IPM)
family in dual configuration which is mainly developed
to increase the inverter efficiency. For this purpose
several new technologies have been implemented
such as a CSTBTTM chip. Chip technology and
structural improvements reduce the effective junction
temperature and increase the power and thermal
cycling capability while keeping the mechanical
compatibility to the existing V-Series.
DIP and Mini-DIPIPMs use an ultra compact transfer
mold package and include drive and protection ICs.
S1 = S1-Series
5 Change of Appearance or Other:
A
B
C
D
S
6 VCES:
060 = 600V
120 = 1200V
Example:
32
PM
300
C
L1
A
060
1
2
3
4
5
6
2.02
Overview of IPM
L1-Series
L1-Series
50A-300A
600V
25A-150A
1200V
S1-Series
S1-Series
50A-200A
600V
25A-100A
1200V
L-Series
L-Series
450A-600A
600V
1200V
2
200A-450A
IPM for Photovoltaic
IPM for
Photovoltaic
600V
50A75A
V1-Series
V1-Series
400A-800A
600V
200A-450A
1200V
25
50
75
100
150 200
300
400 450
600
800A
33
2.03
5th Generation CSTBTTM IPMs (V1-Series)
Features
2
•Low loss by 5th Generation CSTBTTM Chip
– for 600V modules:
VCEsat (@Tj = 125°C) = 1.90V
– for 1200V modules:
VCEsat (@Tj = 125°C) = 1.85V
•Optimized thermal sensor on chip
•Mechanical compatibility with previous V-Series Small Package
•Short circuit protection (SC)
•Control supply under voltage protection (UV)
•Over temperature (OT) protection
(on chip temperature sensor)
•Fault signal output in case of a failure (FO)
34
2.035th Generation CSTBTTM IPMs (V1-Series)
Line-up V1-Series
VCES
IC (A)
Circuit
Symbol
Diagram
(V)
200 300 400450 600800
D
Type Number
600
PM400DV1A060
1200PM200DV1A120 PM300DV1A120
Maximum
Ratings
VCEsat
@ Tj = 25°C
(V)
PM450DV1A120
Thermal Characteristics
Electrical Characteristics
Maximum Switching Times
@ Tj = 125°C
PM600DV1A060PM800DV1B060
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-s)
(K/W)
Max.
Max.
Typ.
Protection Functions
PackageNo.
SC
(A)
OT
(°C)
UV
(V)
Min.
Min.
Typ.
135
12
V1
PM600DV1A0606006001.902.350.80.41.00.30.40.073 0.109 0.018 1000 135
12
V1
PM800DV1B0606008001.852.350.8 0.4 1.4 0.30.250.050 0.090 0.014 1200
135
12
V2
PM200DV1A120
12002001.652.150.80.42.40.40.30.090 0.146 0.018 300
135
12
V1
PM300DV1A120
12003001.652.150.80.42.40.40.30.070 0.107 0.018 450
135
12
V1
PM450DV1A120
12004501.652.150.80.42.40.40.30.056 0.079 0.018 675
135
12
V1
VCES
(V)
IC
(A)
Typ.
Max.
ton
(µs)
tc(on)
(µs)
toff
(µs)
tc(off)
(µs)
trr
(µs)
600 Volt IPM (V1-Series)
PM400DV1A0606004001.902.350.80.41.00.30.40.099 0.153 0.018 600
2
1200 Volt IPM (V1-Series)
Package V1
Package V2
Dimensions in mm
35
2.04
5th Generation CSTBTTM IPMs (L1 & S1-Series)
Applications
•General purpose inverter
•Servo drives
•Other motor controls
2
Features
•5th Generation IGBT chip with
CSTBTTM resulting low power loss
•Better trade off between VCEsat and Eoff
Typical VCEsat @ 125°C: 1.75V (600V) and 1.85V (1200V)
•Package compatibility with existing range of
L-Series IPM
•New small package for 7 in 1, 50A/600V and
25A/1200V (Reduced package size by 32% of existing
L-Series IPM)
•Improved Power cycling capability
•Detection, protection and status indication for SC, OT
(with On-chip temperature sensor) & UV
•Available from 25A to 150A/1200V and 50A to 300A/600V
•Up to 75A (1200V) and 150A (600V), Solder pin & screw
types with same package foot size
•Newly developed L1-Series evaluation board is available
on request
36
2.045th Generation CSTBTTM IPMs (L1 & S1-Series)
Line-up L1-Series
IC (A)
VCES
Symbol Internal Function
(V)
25 50 75 100150200300
PM50CL1A060 PM75CL1A060 PM100CL1A060PM150CL1A060
600
PM200CL1A060 PM300CL1A060
3 Ø Inverter IGBT
PM50CL1B060 PM75CL1B060 PM100CL1B060PM150CL1B060
Integrated Gate Drive
C
SC / OT / UV
PM25CL1A120PM50CL1A120 PM75CL1A120
1200
PM100CL1A120 PM150CL1A120 PM25CL1B120
PM50CL1B120
PM75CL1B120
PM50RL1A060
PM75RL1A060 PM100RL1A060PM150RL1A060
600
PM50RL1B060
PM200RL1A060 PM300RL1A060
3 Ø Inverter IGBT
PM75RL1B060 PM100RL1B060PM150RL1B060
PM50RL1C060
R
Integrated Gate Drive
PM25RL1A120
SC / OT / UV
PM50RL1A120PM75RL1A120
1200PM25RL1B120
PM100RL1A120 PM150RL1A120 PM50RL1B120PM75RL1B120
PM25RL1C120
Line-up S1-Series
IC (A)
VCES
Symbol Internal Function
(V)
25 50 75 100150200300
C
3 Ø Inverter IGBT
Integrated Gate Drive
SC / OT / UV
600
PM50CS1D060 PM75CS1D060 PM100CS1D060PM150CS1D060PM200CS1D060
1200PM25CS1D120PM50CS1D120 PM75CS1D120PM100CS1D120
CLA / RLA types with screw terminals; CLB / RLB types with solder pins
Structure of L1-series IPM
SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.
2
Internal configuration L1/S1 series IPM
CSTBT
Technology
37
2.045th Generation CSTBTTM IPMs (L1 & S1-Series)
Type Number
Maximum
Ratings
VCES
(V)
IC
(A)
VCEsat
@ Tj = 25°C
(V)
Typ.
2
Thermal Characteristics
Electrical Characteristics
Max.
Maximum Switching Times
@ Tj = 125°C
ton
(µs)
tc(on)
(µs)
toff
(µs)
tc(off)
(µs)
trr
(µs)
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-s)
(K/W)
Max.
Max.
Max.
600 Volt IPM (L1-Series)
PM50CL1A060 600501.752.350.80.41.00.30.4 0.44
PM50CL1B060 600501.752.350.80.41.00.30.4 0.44
PM50RL1A060 600501.752.350.80.41.00.30.4 0.44
PM50RL1B060 600501.752.350.80.41.00.30.4 0.44
PM50RL1C060 600501.752.350.80.41.00.30.4 0.74
PM75CL1A060 600751.752.350.80.41.00.30.4 0.37
PM75CL1B060 600751.752.350.80.41.00.30.4 0.37
PM75RL1A060 600751.752.350.80.41.00.30.4 0.37
PM75RL1B060 600751.752.350.80.41.00.30.4 0.37
PM100CL1A0606001001.752.350.80.41.00.30.4 0.32
PM100CL1B0606001001.752.350.80.41.00.30.4 0.32
PM100RL1A0606001001.752.350.80.41.00.30.4 0.32
PM100RL1B0606001001.752.350.80.41.00.30.4 0.32
PM150CL1A0606001501.752.350.80.41.00.30.4 0.25
PM150CL1B0606001501.752.350.80.41.00.30.4 0.25
PM150RL1A0606001501.752.350.80.41.00.30.4 0.25
PM150RL1B0606001501.752.350.80.41.00.30.4 0.25
PM200CL1A0606002001.752.350.80.41.00.30.4 0.20
PM200RL1A0606002001.752.350.80.41.00.30.4 0.20
PM300CL1A0606003001.752.350.80.41.00.30.4 0.15
PM300RL1A0606003001.752.350.80.41.00.30.4 0.15
1200 Volt IPM (L1-Series)
PM25CL1A1201200251.652.150.80.41.20.40.3 0.97
PM25CL1B1201200251.652.150.80.41.20.40.3 0.97
PM25RL1A120 1200251.652.150.80.41.20.40.3 0.97
PM25RL1B1201200251.652.150.80.41.20.40.3 0.97
PM25RL1C1201200251.652.150.80.41.50.40.3 0.70
PM50CL1A1201200501.652.150.80.41.20.40.3 0.27
PM50CL1B1201200501.652.150.80.41.20.40.3 0.27
PM50RL1A1201200501.652.150.80.41.20.40.3 0.27
PM50RL1B1201200501.652.150.80.41.20.40.3 0.27
PM75CL1A1201200751.652.150.80.41.20.40.3 0.21
PM75CL1B1201200751.652.150.80.41.20.40.3 0.21
PM75RL1A1201200751.652.150.80.41.20.40.3 0.21
PM75RL1B1201200751.652.150.80.41.20.40.3 0.21
PM100CL1A12012001001.652.150.80.41.20.40.3 0.19
PM100RL1A12012001001.652.150.80.41.20.40.3 0.19
PM150CL1A12012001501.652.150.80.41.20.40.3 0.15
PM150RL1A12012001501.652.150.80.41.20.40.3 0.15
600 Volt IPM (S1-Series)
PM50CS1D060 600501.802.400.80.41.40.30.3 0.40
PM75CS1D060 600751.802.400.80.41.40.30.3 0.33
PM100CS1D0606001001.802.400.80.41.40.30.3 0.28
PM150CS1D0606001501.802.400.80.41.40.30.3 0.21
PM200CS1D060 6002001.902.600.80.41.40.30.3 0.18
1200 Volt IPM (S1-Series)
PM25CS1D120 120025 1.652.150.650.351.10.350.2 0.37
PM50CS1D120 120050 1.652.150.650.351.10.350.2 0.25
PM75CS1D120 120075 1.652.150.650.351.10.350.2 0.20
PM100CS1D120 1200100 1.652.150.650.35 1.1 0.35 0.2 0.18
SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.
38
Protection Functions
PackageNo.
SC
(A)
OT
(°C)
UV
(V)
Min.
Min.
Typ.
0.75 0.038
0.75 0.038
0.75 0.038
0.75 0.038
1.28 0.085
0.63 0.038
0.63 0.038
0.63 0.038
0.63 0.038
0.52 0.038
0.52 0.038
0.52 0.038
0.52 0.038
0.41 0.038
0.41 0.038
0.41 0.038
0.41 0.038
0.30 0.023
0.30 0.023
0.23 0.023
0.23 0.023
100
100
100
100
100
150
150
150
150
200
200
200
200
300
300
300
300
400
400
600
600
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
L1
L2
L1
L2
L5
L1
L2
L1
L2
L1
L2
L1
L2
L1
L2
L1
L2
L3
L3
L3
L3
1.60 0.038
1.60 0.038
1.60 0.038
1.60 0.038
1.18 0.085
0.47 0.038
0.47 0.038
0.47 0.038
0.47 0.038
0.36 0.038
0.36 0.038
0.36 0.038
0.36 0.038
0.31 0.023
0.31 0.023
0.23 0.023
0.23 0.023
50
50
50
50
50
100
100
100
100
150
150
150
150
200
200
300
300
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
12
L1
L2
L1
L2
L5
L1
L2
L1
L2
L1
L2
L1
L2
L3
L3
L3
L3
0.68
0.55
0.46
0.35
0.27
0.046
0.046
0.046
0.046
0.046
75
112
150
225
300
135
135
135
135
135
12
12
12
12
12
S1
S1
S1
S1
S1
0.59
0.41
0.32
0.27
0.046
0.046
0.046
0.046
38
75
112
150
135
135
135
135
12
12
12
12
S1
S1
S1
S1
2.045th Generation CSTBTTM IPMs (L1 & S1-Series)
Package L1
Package L2
Package L3
Package L5
2
Package S1
Dimensions in mm
39
2.05
5th Generation CSTBTTM IPMs (L-Series)
Features
• 5th Generation IGBT chip with CSTBTTM
Technology
2
• Typical VCEsat =
1.8V @ Tj = 125°C for 600V and
1.9V @ Tj = 125°C for 1200V
• Integrated turn-on speed controller circuit
optimises EMI performance
• On-chip temperature sensor for Tj detection of
CSTBTTM chip
• Detection, protection and status indication
circuits for short-circuit, over-temperature,
and under-voltage
• Monolithic gate drive & protection logic
40
2.055th Generation CSTBTTM IPMs (L-Series)
Line-up L-Series
VCES
IC (A)
Internal Function
Symbol
(V)
200 300450600
600
PM450CLA060PM600CLA060
3 Ø Inverter IGBT
Integrated Gate Drive
C
SC / OT / UV
1200
PM200CLA120 PM300CLA120PM450CLA120
SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.
Type Number
Maximum
Ratings
VCES
(V)
IC
(A)
Electrical Characteristics
VCEsat
@ Tj = 25°C
(V)
Thermal Characteristics
Typical Switching Times
@ Tj = 125°C
IGBT
Rth(j-c)
(K/W)
Max.
Diode
Rth(j-c)
(K/W)
Max.
Typical Protection
Functions
OT
(°C)
Min.
UV
(V)
Typ.
135
12
L4
PM600CLA060 6006001.72.21.00.42.20.60.2 0.07 0.11 0.014 1200 135
12
L4
Typ.
Max.
ton
(µs)
tc(on)
(µs)
toff
(µs)
tc(off)
(µs)
trr
(µs)
Rth(c-s)
(K/W)
Max.
SC
(A)
Min.
PackageNo.
600 Volt IPM (L-Series)
PM450CLA060 6004501.72.21.00.42.20.60.2 0.12 0.19 0.014 900
1200 Volt IPM (L-Series)
PM200CLA12012002001.82.31.00.42.30.70.5 0.12 0.20 0.014 400
135
12
L4
PM300CLA12012003001.82.31.00.42.30.70.5 0.08 0.13 0.014 600
135
12
L4
PM450CLA12012004501.82.31.00.42.30.70.5 0.05 0.09 0.014 900
135
12
L4
SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.
Package L4
2
Dimensions in mm
41
2.06
5th Generation IPMs for Photovoltaic Application
Features
•5th Generation trench chip (CSTBTTM)
•On-chip temperature sensing and individual OT protection
•Compact L1-Series IPM package with pin terminals
2
•0, 1 or 2 boost converters built in for multi-string operation
•50A/600V modules good for approximately 7.5kW (16kHz)
fed to mains
•Rated currents of 50A and 75A with a rated voltage of 600V
Line-up (600V)
IC (A)
Circuit
Package
Type name
1 Inverter
L5
PM50B4L1C060
1 Inverter & 1 Chopper
L5
PM50B5L1C060
1 Inverter & 2 Chopper
L5
PM50B6L1C060
1 Inverter
L5
PM75B4L1C060
1 Inverter & 1 Chopper
L5
PM75B5L1C060
1Inverter & 2 Chopper
L5
PM75B6L1C060
50
75
42
2.065th Generation IPMs for Photovoltaic Application
Circuit Diagram
Maximum
Ratings
Type Number
VCES
(V)
IC
(A)
VCEsat
@ Tj = 125°C
(V)
Typ.
Typical Switching Times
ton
(µs)
tc(on)
(µs)
toff
(µs)
tc(off)
(µs)
Typical Protection
Functions
Thermal Characteristics
Electrical Characteristics
trr
(µs)
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-s)
(K/W)
SC*
(A)
OT
(°C)
UV
(V)
PackageNo.
600 Volt IPM for Solar Power
PM50B4L1C060600 50
2.2
0.50.151.1 0.2 0.1 0.74 1.28 0.06
75
135
12
L5
PM50B5L1C060600 50
2.2
0.50.151.1 0.2 0.1 0.74 1.28 0.06
75
135
12
L5
PM50B6L1C060600 50
2.2
0.50.151.1 0.2 0.1 0.74 1.28 0.06
75
135
12
L5
PM75B4L1C060600 75
2.2
0.50.151.1 0.2 0.1 0.62 1.06 0.06
112
135
12
L5
PM75B5L1C060600 75
2.2
0.50.151.1 0.2 0.1 0.62 1.06 0.06
112
135
12
L5
PM75B6L1C060600 75
2.2
0.50.151.1 0.2 0.1 0.62 1.06 0.06
112
135
12
L5
*minimum trip values
2
OC: over-current prot. / SC: short-circuit prot. / OT: over-temperature prot. / UV: under-voltage lock prot.
Package L5
Dimensions in mm
43
2.07
Overview of DIPIPMTM (Dual-in-line Package Intelligent Power Modules)
Large DIPIPMTM
Large DIPIPMTM
600V
50A-75A
1200V
5A-50A
Mini DIPIPMTM
Mini-DIPIPMTM
600V
5A-50A
1200V
5A-10A
2
Super-Mini DIPIPMTM
Super-Mini
DIPIPMTM
Super-Mini
DIPIPMTM
MOSFET type
600V
10A-35A
3A5A
500V
3
44
5
10
15
20
25
30
35
50
75A
2.08
Large DIPIPMTM Ver. 4 for Photovoltaic Application
Features
•5th Generation fast Full-gate CSTBTTM
•Rating: 50A/600V
•High performance Driver IC
for high frequency switching
2
•Optional IGBT/FWDi channel
for improving total efficiency
•Low thermal resistance
by innovative insulation material
•Single phase DC/AC conversion
•Under voltage protection of control voltage supply
•5V/3V input compatible high active logic
•Fault signal output in case of a failure
•Short circuit protection
•2500Vrms isolation voltage
•N-side open emitter
•RoHS directive compliance
45
2.08 Large DIPIPMTM Ver. 4 for Photovoltaic Application
Line-up Large DIPIPMTM for Photovoltaic Application
VCES
Isolation Voltage
Type
(Vrms)
(V)
Large DIPIPM 2500600
Circuit Diagram
IC (A)
50
PS61A99
PackageNo.
D1
Package D1
2
Dimensions in mm
Block Diagram
46
2.09
1200V DIPIPMTM
(Dual-in-line Package Intelligent Power Modules)
Features
• 6.1 Generation IGBT with CSTBTTM chip technology (in Ver. 6)
• Designed for low power motor control (0.4kW-7.5kW at 400V AC line voltage)
• Lead free compact dual-in-line transfer mold package
• Rated currents ranging from 5A-50A and VCES = 1200V
2
• Protection functions:
– UV: Control supply under voltage (P, N)
– On-chip current sense for short circuit protection
– Analog temperature sensor output (Tc)
• 2500Vrms isolation voltage
• N-side open emitter structure
• RoHS compliant
Circuit Diagram
HVIC X 1
IGBT & FWDi X 6
•Gatedrive
•Levelshift
•Undervoltageprotection(UV,withoutfaultsignalFo)
LVIC X 1
•Gatedrive
•Levelshift
•Undervoltageprotection(UV,withoutfaultsignalFo)
•Shortcircuitprotection(SC,withfaultsignalFo)
•Faultsignaloutput
•Temperatureoutput
47
2.09 1200V DIPIPMTM
(Dual-in-line Package Intelligent Power Modules)
Line-up 1200V DIPIPMTM
VCES
IC (A)
Isolation Voltage
Type
(Vrms)
(V)
5
10 15253550
Large DIPIPM Ver. 4
2500
PackageNo.
1200 PS22A72 PS22A73 PS22A74 PS22A76PS22A78-EPS22A79
Large DIPIPM Ver. 62500 1200
PSS05SA2FTPSS10SA2FT PSS15SA2FTPSS25SA2FTPSS35SA2FTPSS50SA2FT
D1
D1
Mini DIPIPM Ver. 6 25001200
PSS05S72FT
PSS10S72FT
D5
under development
Thermal &
Mechanical
Characteristics
Electrical Characteristics
Type Number
VCES
(V)
Applicable
Motor
Ratings
(kW)
PS22A72 12000.7
PS22A73 12001.5
PS22A74 12002.2
PS22A76 12003.7
PS22A78-E12005.5
PS22A79 12007.5
2
Package D1
IC
(A)
fC
(kHz)
Max.
Isolation
Voltage
(Vrms)
VCEsat
@ Tj = 25°C
(V)
Typ.
Max.
Typical Switching Times @ Tj = 125°C
ton
(µs)
trr
(µs)
tc(on)
(µs)
toff
(µs)
tc(off)
(µs)
IGBT
Rth(j-c)
(°C/W)
Diode
Rth(j-c)
(°C/W)
1200V Large DIPIPM
5202500 1.92.61.20.50.62.40.62.24
2.74
10202500 1.92.61.20.50.62.40.61.51
1.78
15202500 1.92.61.20.50.62.40.61.15
1.60
25202500 1.92.61.20.50.62.40.60.88
1.40
35202500 1.92.61.20.50.62.40.60.77
1.25
50202500 1.92.61.20.50.62.40.60.77
1.25
Package D5
Dimensions in mm
48
2.10
500V Super Mini MOS DIPIPMTM
(Dual-in-line Package Intelligent Power Modules)
Applications
• Refrigerator
Features
• 3-phase DC/AC conversion
2
• Junction Temp. Tj: -20°C - 150°C
• Protection functions:
Short Circuit (SC),
Under Voltage (UV),
Over Temperature (OT)
• Fault signal output in case of a failure
• Built-in Bootstrap diode with current limiting resistor
• 3-15V input compatible high active logic
• Pin compatible with Ver. 4 and 5 PS219xx series (38mm x 24mm)
• N-side open Emitter
• Isolation voltage: AC 1500Vrms
49
2.10
500V Super Mini MOS DIPIPMTM (Dual-in-line Package Intelligent Power Modules)
Line-up 500V Super Mini MOS DIPIPMTM
TypeVcesICPackage
(V)(A)No.
PSM03S93E5-A
5003 D2
Built-in
Over Temp.
Protection
PSM05S93E5-A
5005 D2
Package D2
2
Dimensions in mm
50
2.11
600V Super Mini DIPIPMTM Ver. 6
(Dual-in-line Package Intelligent Power Modules)
Applications •
Air-Conditioner
•
Washing Machine
•
Refrigerator
•Small Power Drives
2
Features
•7th Generation IGBT with CSTBTTM chip technology
•3-phase DC/AC conversion
•Junction Temp. Tj: -30°C - 150°C
•Protection functions:
Short Circuit (SC), Under Voltage (UV), Over Temperature (OT) •Analog output of LVIC temp. (optional)
•Fault signal output in case of a failure
• Built-in Bootstrap diode with current limiting resistor
•3-15V input compatible high active logic
•Pin compatible with Ver. 4 and 5 PS219xx series (38mm x 24mm)
•N-side open Emitter •Isolation voltage: AC 1500Vrms
51
2.11
600V Super Mini DIPIPMTM Ver. 6 (Dual-in-line Package Intelligent Power Modules)
Line-up 600V Super Mini DIPIPMTM Ver. 6
TypeVcesICPackage
(V)(A)No.
PSS10S92E6-AG
60010 D2
Built-in
Over Temp.
Protection
PSS15S92E6-AG
60015 D2
PSS20S92E6-AG
60020 D2
PSS30S92E6-AG
60030 D2
PSS35S92E6-AG
60035 D2
PSS10S92F6-AG
60010 D2
Built-in
Analog Output
of Temp.
PSS15S92F6-AG
60015 D2
PSS20S92F6-AG
60020 D2
PSS30S92F6-AG
60030 D2
PSS35S92F6-AG
60035 D2
Circuit Diagram
Package D2
Bootstrap Circuit
2
Analog
Temperature Output
N-side Open Emitter
Dimensions in mm
52
2.12
600V Large DIPIPMTM Ver. 4
(Dual-in-line Package Intelligent Power Modules)
Features
•Low thermal resistance by innovative insulation material
•RoHS compliant
•For P-side IGBTs:
– Drive circuit
– High voltage level shift circuit
– Control supply under voltage (UV) lockout circuit
2
•For N-side IGBTs:
– Drive circuit
– Short circuit (SC) protection circuit
(by using external sense resistor)
– Control supply under voltage (UV) lockout circuit
•IGBT Drive Supply
– Single DC 15V power supply required
•Control Input interface
– Schmitt-triggered 3V, 5V, 15V input compatible, high active logic
•Open emitter topology available
•DIPIPMTM available in 50A and 75A/600V
53
2.12 600V Large DIPIPMTM Ver. 4
(Dual-in-line Package Intelligent Power Modules)
Line-up 600V Large DIPIPMTM Ver. 4
TypeSeries
Isolation Voltage
VcesIC
(V)(A)
(Vrms)
Motor Rating
Package(kW)No.
PS21A79
Large DIPIPM Ver. 4
60050
2500
4.0
D1
PS21A7A
Large DIPIPM Ver. 4
60075
2500
5.5
D1
Package D1: DIPIPM Ver. 4 PS21A7x
2
Notes
Dimensions in mm
Dimensions in mm
54
2.13
600V Industrial Mini DIPIPMTM
(Dual-in-line Package Intelligent Power Modules)
Applications
• Small Motor Drives
• Textile Machines
• Automatic Doors
Features
2
• 6th Generation CSTBTTM
• Designed for low power motor control
(0.2kW-3.7kW at 240V AC line voltage)
• Lead free compact dual-in-line transfer mold package
• Rated currents ranging from 5A-50A and VCES = 600V
• Built-in Bootstrap diode with current limiting resistor
• Protection functions:
– SC: Short circuit (N) with external shunt resistor
– UV: Control supply under voltage (P, N)
– Analog temperature sensor output (Tc)
• 2500Vrms isolation voltage
• N-side open emitter structure
• RoHS compliant
• Two type package (Mini DIPIPMTM Ver. 3 package*
for 5-20A / Mini DIP Ver. 4 package* for 20-50A)
* A part of terminal assignment and shape is different from current Mini DIPIPMTM Ver. 3 and 4
55
2.13 600V Industrial Mini DIPIPMTM
(Dual-in-line Package Intelligent Power Modules)
Line-up 600V Industrial Mini DIPIPMTM
TypeVcesICPackage
(V)(A)No.
PSS05S51F6/-C
6005 D3
PSS10S51F6/-C
60010 D3
Built-in
Analog Output
of Temp.
PSS15S51F6/-C
60015 D3
PSS20S51F6/-C
60020 D3
PSS20S71F6
60020 D5
PSS30S71F6
60030 D5
PSS50S71F6
60050 D5
Package D3: Mini DIP Ver. 3
Package D5: Mini DIP Ver. 4
2
Dimensions in mm
56
2.14
Mini DIPPFCTM (Dual-in-line Package Power Factor Correction)
Features
•Employing low loss & high speed Trench IGBTs
for total loss reduction at high frequencies
•High reliability (long power life cycle)
•Low thermal resistance by innovative insulation
material
2
•Low noise by optimization of gate driver
•RoHS compliant
•Under voltage (UV) protection
57
2.14 Mini DIPPFCTM (Dual-in-line Package Power Factor Correction)
Line-up DIPPFCTM
Type
Isolation Voltage
VCES
(Vrms)
(V)
Mini DIPPFC 2500 600
Input AC current (Arms)
20
PackageNo.
30
PS51787
PS51789
Thermal & Mechanical
Characteristics
Electrical Characteristics
Type Number
Input AC
Line Voltage
(Vrms)
Input AC
current
(Arms)
fC
(kHz)
Isolation
Voltage
(Vrms)
D11
VCEsat
@ Tj = 25°C
(V)
Typ.
Max.
Typical Switching Times
ton
(µs)
trr
(µs)
tc(on)
(µs)
toff
(µs)
tc(off)
(µs)
IGBT
Rth(j-c)
(°C/W)
Diode
Rth(j-c)
(°C/W)
PS51787
264 2020
2500
1.9
2.5
0.25 0.11 0.140.400.18
0.96
1.35
PS51789
264
2500
2
2.6
0.25 0.11 0.140.400.18
0.68
0.90
Circuit Diagram
30
20
Package D11
2
Dimensions in mm
58
3.
MOSFET Modules
Features
•Low VDS(ON) and Low VSD
•Trench gate MOSFET chip technology
•RDS(ON) = 0.8mΩ (FM400TU-07A @ 25°C)
•Operation without snubber circuit possible
•Avalanche capability is guaranteed at turn-off
3
•Control terminals for standard connector
•Inbuilt Thermal sensor (NTC)
•High reliability
•100A(rms), 200A(rms), 300A(rms) available in 75V, 100V and 150V
in a 6 in 1 compact package
59
3. MOSFET Modules
Circuit Diagram
Rated Current (A) P
(7)
(1)
(8)
(2)
Voltage (V)
Type Number
75FM200TU-07A
100
100FM200TU-2A
(9)
(3)
150FM200TU-3A
75FM400TU-07A
U
(10)
(4)
V
(11)
(5)
W
(12)
(5)
200
N
(13)
100FM400TU-2A
150FM400TU-3A
75FM600TU-07A
(14)
(1) SUP
(5) SVN
VP
VN
(9)
GWP
UN
(7) GUP
(8) GVP
(11) GVN
(12) GVN
300
(2) S
(6) S
(10) G
(3) SWP
(4) SUN
(13) TH1
(14) TH2
Maximum
Ratings
3
Type Number
VDSS
(V)
ID
(A)
Typ.
Max.
Ciss
(nF)
Coss
(nF)
Crss
(nF)
Max.
Max.
Max.
Maximum Switching Times
td(on)
(ns)
tr
(ns)
150FM600TU-3A
Thermal & Mechanical
Characteristics
Electrical Characteristics
rDS(ON)
@ Tch = 25°C
(mΩ)
100FM600TU-2A
td(off)
(ns)
tf
(ns)
trr
(ns)
Qrr
(µC)
VSD
(V)
Typ.
Max.
MOSFET
Rth(j-c)
(K/W)
Max.
Rth(c-f)
(K/W)
Typ.
PackageNo.
FM200TU-07A 75 1001.201.65 50 7 4 450400600400200 2.0 1.3
0.220
0.1
FM1
FM400TU-07A 75 2000.801.10 75 10 6 450500450400200 4.5 1.3
0.142
0.1
FM1
FM600TU-07A 75 3000.530.73110 15 10 450600600600200 4.8 1.3
0.096
0.1
FM1
FM200TU-2A 1001002.403.30 50 7 4 400300450300250 3.6 1.3
0.220
0.1
FM1
FM400TU-2A 1002001.452.00 75 10 6 400400450300250 6.0 1.3
0.142
0.1
FM1
FM600TU-2A 1003000.801.10110 15 10 400600600400250 6.2 1.3
0.096
0.1
FM1
FM200TU-3A 1501004.806.60 50 7 4 400250450200200 6.5 1.3
0.220
0.1
FM1
FM400TU-3A 1502002.603.55 75 10 6 400300450200200 7.0 1.3
0.142
0.1
FM1
FM600TU-3A 1503001.602.20110 15 10 400400500400200 8.0 1.3
0.096
0.1
FM1
60
3. MOSFET Modules
Comparison
Output Characteristics
Pachage FM1
Package
Outline
Example FM400TU-07A
400
VDS = 20V
12V
3
10V
15V
350
Tch = 25°C
Drain-Current ID (A)
300
0.8mΩ
250
200
9V
150
100
50
No Threshold Voltage
0
0
01
02
03
04
05
06
07
08
09
1
Drain-Source Voltage VDS (V)
Dimensions in mm
61
4.01
High Voltage IGBT Modules (HVIGBT)
Features
•Highest Reliability in Material and Processes:
Improvement of power cycling capability
•High robust design
•Highest Quality Controls:
– Static and switching tests
– 100% shipping inspection
•HVIGBT and HVDiode modules are available in rated
voltages of 1.7kV, 2.5kV, 3.3kV, 4.5kV, 6.5kV and rated
currents ranging from 200A to 2400A
4
•1.7kV HVIGBT modules with Light Punch Through
Carrier Stored Trench Gate Bipolar Transistor
(LPT-CSTBTTM) technology and a new free-wheel diode
design for reduced IGBT losses and suppressed diode
oscillation
•3.3kV, 4.5kV & 6.5kV HVIGBT modules and diodes with
10.2kV isolated package available
•New 3.3kV, 4.5kV, 6.5kV R-Series IGBT Modules
–Increased rated current and low loss performance
– Increased terminal torque capability to 22Nm
–10.2kV high isolation package available on request
–Extended maximum operating temperature
and minimum storage temperature up to
150°C and -55°C respectively
– High Robustness (Wide SOA)
62
•New 1.7kV 1200A Dual Hybrid SiC Module
– New 6th Generation IGBT chip, CSTBTTM (III)
– Extended maximum operation temperature
and minimum storage temperature up to
150°C and -50°C respectively
– SiC Schottky-Barrier Diode
Generation
IC (A)
& Base ConfiguPlate
(V)
ration
Material
200 400 600 750 800 900 100012001500160018002400
Line-up HVIGBTs
1
CSTBTTM Chip Technology
2
High Isolation Package (10.2kVrms)
3
New R-Series
4
CSTBTTM (III) Chip Technology
5
SiC Schottky-Barrier Diode
CM1200DC-34S4
G5 (AlSiC)
Dual
CMH1200DC-34S4,5
Single
CM800HA-50H
CM1200HA-50H
G1 (Cu)
Dual
CM400DY-50H
2500
G2 (Cu)
Single
CM800HB-50H
CM1200HB-50H
G3 (AlSiC)
Single
CM1200HC-50H
Single
CM800HA-66H
CM1200HA-66H
G1 (Cu)
Dual
CM400DY-66H
G2 (Cu)
Single
CM800HB-66H
CM1200HB-66H
CM1200HC-66H
CM1500HC-66R3
3300
Single
CM400HG-66H2CM800HC-66HCM1000HC-66R3
2
2,3
CM1500HG-66R
CM1200HG-66H
G3 (AlSiC)
CM800E2C-66H
Chopper
CM800E4C-66H
CM1000E4C-66R3
CM800E6C-66H
G2 (Cu)
SingleCM400HB-90H
CM600HB-90HCM900HB-90H
CM1200HC-90R
4500
CM800HC-90R3CM900HC-90H
CM1200HC-90RA3
G3 (AISiC)
Single
CM600HG-90H2
2,3
2
CM800HG-90R CM900HG-90H
CM1200HG-90R2,3
2
2
CM400HG-130H2CM600HG-130H
CM750HG-130R2,3
SingleCM200HG-130H
6500
G3 (AlSiC)
ChopperCM400E4G-130H2
Single
CM800HA-34H
CM1200HA-34H
G1 (Cu)Dual
CM600DY-34H
ChopperCM600E2Y-34H
Single
CM1200HC-34H
CM1600HC-34H
CM1800HC-34H
CM2400HC-34H
G3 (AlSiC)
CM800DZ-34H
Dual
CM800DZB-34N1
1700 G4 (Cu)
Dual
CM1200DB-34N 1
1
CM2400HC-34N 1
CM1200HCB-34N 1 CM1800HC-34N
Single
CM1800HCB-34N 1CM2400HCB-34N 1
G4 (AlSiC)
Dual
CM1200DC-34N 1
Chopper
CM1200E4C-34N 1
VCES
4.01 High Voltage IGBT Modules (HVIGBT)
63
4
4.01 High Voltage IGBT Modules (HVIGBT)
Circuit Diagrams
D
H
E2
E4
Electrical
Characteristics
Free Wheel
Diode
E6
For detailed connections please refer data sheet.
Maximum
Ratings
Package
Symbol
Type
Number
VCES
(V)
IC
(A)
Visol
(V)
VCEsat
@ Tj = 25°C
(V)
Typ.
Thermal & Mechanical
Characteristics
Eon
Eoff
VF
Err
@ Tj = 125°C @ Tj = 125°C @ Tj = 25°C @ Tj = 125°C
(J/P)
(J/P)
(V)
(J/P)
Typ.
Typ.
Typ.
Typ.
2.40
0.09
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-s)
(K/W)
Max.
Max.
Max.
PackageNo.
1700 Volt HVIGBT Modules
4
CM600DY-34H
1700 6004000
2.75
0.28
0.15
0.0180 0.056 0.016
HV2
CM800DZ-34H 1700 8004000
2.60
0.35
0.26
2.30
0.12
0.0200 0.034 0.016
HV2
CM800DZB-34N 1700 8004000
2.10
0.30
0.20
2.20
0.18
0.0240 0.036 0.018
HV2
D
CM1200DC-34N 1700 12004000
2.15
0.38
0.36
2.60
0.22
0.0190 0.042 0.016
HV10
CM1200DB-34N 1700 12004000
2.15
0.38
0.36
2.60
0.22
0.0180 0.04 0.016
HV10
CM1200DC-34S 1700 12004000
1.95
0.34
0.28
2.60
0.17
0.0185 0.042 0.016
HV10
CMH1200DC-34S 1700 1200 4000
1.95
0.15
0.28
1.60
–
0.0185
HV10
0.036
0.016
CM800HA-34H 1700 8004000
2.75
0.30
0.30
2.40
0.15
0.0135 0.042 0.012
HV1
CM1200HA-34H 1700 12004000
2.75
0.45
0.45
2.40
0.22
0.0090 0.028 0.008
HV1
CM1200HC-34H
2.50
0.40
0.44
2.25
0.18
0.0120
CM1200HCB-34N 1700 12004000
1700 1200 4000
2.05
0.43
0.32
2.20
0.29
0.0140 0.021 0.010
0.020 0.010
HV7
HV1
CM1600HC-34H 1700 16004000
2.60
0.54
0.58
2.30
0.22
0.0100 0.017 0.008
HV1
H
CM1800HC-34H 1700 18004000
2.40
0.59
0.67
2.20
0.26
0.0080 0.013 0.007
HV4
CM1800HC-34N 1700 18004000
2.15
0.55
0.56
2.60
0.28
0.0125 0.028 0.011
HV12
CM1800HCB-34N 1700 18004000
2.00
0.56
0.50
2.10
0.44
0.0090 0.013 0.007
HV4
CM2400HC-34H 1700 24004000
2.60
0.81
0.87
2.30
0.33
0.0070 0.012 0.006
HV4
CM2400HC-34N 1700 24004000
2.15
0.64
0.84
2.60
0.38
0.0095 0.021 0.008
HV12
CM2400HCB-34N 1700 2400 4000
2.10
0.65
0.70
2.20 0.50 0.0080
0.012
0.006
HV4
E2
CM600E2Y-34H
1700 600 4000
2.75
0.28
0.15
2.40 0.09
0.0180
0.056
0.016
HV13
E4
CM1200E4C-34N 1700 1200 4000
2.15
0.38
0.36
2.60 0.22
0.0190
0.042
0.016
HV12
2500 Volt HVIGBT Modules
D
CM400DY-50H
2500 400 6000
3.20 0.50 0.40
2.90 0.11
0.036
0.072
0.016
HV3
CM800HA-50H
2500 800 6000
3.20 1.00 0.80 2.90 0.21
0.018
0.036
0.008
HV5
CM800HB-50H
2500 800 6000
2.80 0.80 0.86 2.50 0.33
0.012
0.024
0.008
HV7
H
CM1200HA-50H
2500 1200 6000
3.20 1.50 1.20 2.90 0.31
0.012
0.024
0.006
HV6
CM1200HB-50H
2500 1200 6000
2.80 1.20 1.29 2.50 0.45
0.008
0.016
0.006
HV4
CM1200HC-50H
2500 1200 6000
2.80 1.30 1.20 2.50 0.45
0.0085
0.017
0.006
HV4
64
4.01 High Voltage IGBT Modules (HVIGBT)
Maximum
Ratings
Package
Symbol
Type
Number
VCES
(V)
IC
(A)
Free Wheel
Diode
Electrical
Characteristics
Visol
(V)
VCEsat
@ Tj = 25°C
(V)
Typ.
Eon
Eoff
VF
Err
@ Tj = 125°C @ Tj = 125°C @ Tj = 25°C @ Tj = 125°C
(J/P)
(J/P)
(V)
(J/P)
Typ.
Typ.
Thermal & Mechanical
Characteristics
IGBT
Rth(j-c)
(K/W)
Diode
Rth(j-c)
(K/W)
Rth(c-s)
(K/W)
Typ.
Typ.
Max.
Max.
Max.
0.072
PackageNo.
3300 Volt HVIGBT Modules
D
CM400DY-66H
3300 400 6000
4.40 0.67
0.40
3.30 0.17
0.036
0.016
HV3
CM400HG-66H
3300 400 10200
3.30 0.59
0.52
2.80 0.30
0.027 0.0525 0.018
HV9
CM800HA-66H
3300 800 6000
4.40 1.60
0.80
3.30 0.33
0.018
0.036
0.008
HV5
CM800HB-66H
3300 800 6000
3.80 1.20
0.96
2.80 0.47
0.012
0.024
0.008
HV7
CM800HC-66H
3300 800 6000
3.30 1.10
1.05
2.80 0.60
0.013
0.025
0.008
HV7
CM1000HC-66R
3300 1000 6000
2.45 1.85
1.65
2.15 1.20
0.012 0.0225 0.009
HV14
H
CM1200HA-66H
3300 1200 6000
4.40 2.00
1.20
3.30 0.50
0.012
0.024
0.006
HV6
CM1200HB-66H
3300 1200 6000
3.80 1.80
1.44
2.80 0.70
0.008
0.016
0.006
HV4
CM1200HC-66H
3300 1200 6000
3.30 1.60
1.55
2.80 0.90
0.0085 0.017
0.006
HV4
CM1200HG-66H
3300 1200 10200
3.30 1.60
1.55
2.80 0.90
0.009 0.0175 0.006
HV8
CM1500HC-66R
3300 1500 6000
2.45 2.75
2.45
2.15 1.75
0.008
0.006
HV15
CM1500HG-66R
3300 1500 10200
2.45 2.75
2.45
2.15 1.75
0.0085 0.0155 0.006
HV16
E2
CM800E2C-66H
3300 800 6000
3.80 1.20
0.96
2.80 0.47
0.013
0.025
0.008
HV4
E4
CM800E4C-66H
3300 800 6000
3.30 1.10
1.05
2.80 0.60
0.013
0.025
0.006
HV4
CM1000E4C-66R 3300 1000 6000
2.45 1.85
1.65
2.15 1.20
0.012 0.0225 0.007
HV15
CM800E6C-66H
3.30 1.10
1.05
2.80 0.60
0.013
HV4
E6
3300 800 6000
0.015
0.025
0.008
4500 Volt HVIGBT Modules
CM400HB-90H
4500 400 6000
3.00 2.00
1.20 4.00 0.28
0.021
0.042
0.015
HV7
CM600HB-90H
4500 600 6000
3.00 2.80
1.80 4.00 0.42
0.0135 0.027
0.010
HV7
CM600HG-90H
4500 600 10200
3.45 2.80 1.70 4.80 0.67
0.0165 0.033
0.009
HV11
CM800HC-90R
4500 800 6000
3.50 3.15
2.60 2.60 1.50 0.015 0.0285 0.009
HV14
CM800HG-90R
4500 800 10200
3.50 3.15
2.60 2.60 1.50 0.016 0.0295 0.009
HV17
CM900HB-90H
4500 900 6000
3.00 4.00
2.70 4.00 0.88
0.009
0.018
0.007
HV4
CM900HC-90H
4500 900 6000
3.45 4.20 2.50 4.80 1.00 0.0105 0.021
0.006
HV4
CM900HG-90H
4500 900 10200
3.45 4.20 2.50 4.80 1.00 0.011
0.022
0.006
HV8
CM1200HC-90R
4500 1200 6000
3.50 4.70 3.85 2.60 2.25 0.010 0.019
0.006
HV15
CM1200HG-90R
4500 1200 10200
3.50 4.70 3.85 2.60 2.25 0.0105 0.0195 0.006
HV16
CM1200HC-90RA 4500 1200 6000
2.80 5.40 5.20 2.25
3.00 0.0095 0.0185 0.006
HV15
H
6500 Volt HVIGBT Modules
CM200HG-130H6500200
10200 4.50
1.50
1.20
4.0
0.70 0.0420.0660.018 HV9
CM400HG-130H6500400
10200 4.50
H
CM600HG-130H6500600
10200 4.50
3.00
2.70
4.0
1.40 0.0210.0330.009 HV11
4.50
4.30
4.0
2.00 0.0140.0220.006 HV8
CM750HG-130R6500750
10200 3.90
4.10
4.60
3.0
1.85 0.0120.0220.006 HV16
E4 CM400E4G-130H6500400
10200 4.50
3.00
2.70
3.8
1.40 0.0210.0330.009 HV8
4
For detail test conditions please refer to data sheets.
65
4.01 High Voltage IGBT Modules (HVIGBT)
4
Package HV1
Package HV2
Package HV3
Package HV4
Package HV5
Package HV6
Dimensions in mm
66
4.01 High Voltage IGBT Modules (HVIGBT)
Package HV7
Package HV8
Package HV9
Package HV10
Package HV11
Package HV12
4
Dimensions in mm
67
4.01 High Voltage IGBT Modules (HVIGBT)
4
Package HV13
Package H14
Package HV15
Package HV16
Package HV17
Notes
Dimensions in mm
68
4.02
© ALSTOM TRANSPORT
High Voltage Diode Modules
Features
•Complementary to HVIGBT modules for multilevel
inverter designs
•Wide creepage distance between main terminals
•Ease of both installation and connection allows
application equipment to be reduced in
dimensions and weight
4
Circuit Diagrams
H
D
For detailed connections please refer data sheets.
69
4.02 High Voltage Diode Modules
Line-up HVDIODE Modules
Generation ConVCES & Base Plate figuMaterial ration
(V)
1700
IC (A)
200250300400600
800/900
1000120015001800
G3 (AlSiC)
Single
RM1800HE-34S
G3 (Cu)
Dual
RM1200DB-34S
G1 (Cu)
Dual
RM400DY-66S
RM600DY-66S
3300
G2 (Cu)
Dual
RM1200DB-66S
G3 (AlSiC)
Single
RM1200HE-66S
Dual
RM400DG-66S1RM1000DC-66F2RM1200DG-66S1RM1500DC-66F2
G2 (Cu)
Dual
RM900DB-90S
4500
G3 (AlSiC)
Single
RM600HE-90S
Dual
6500
Dual RM200DG-130S1RM250DG-130F1,2RM600DG-130S 1
1
G3 (AlSiC)
High Isolation Package (10.2kVrms)
2
RM300DG-90S1RM400DG-90F1,2RM800DG-90F1,2RM1200DG-90F1,2
New F-Series
Maximum Ratings
Electrical Characteristics
Package
Symbol
Type Number
VRRM
(V)
IF
(A)
Visol
(V)
IFSM
(A)
D
RM1200DB-34S
1700
1200
4000
20800
2.10 H
RM1800HE-34S
1700
1800
6000
9600
2.90 VF
(V)
@ Tj = 25°C
Err
(J/P)
Typ.
Qrr
(µC)
Typ.
trr
(µs)
Max.
0.30 420
0.40 600
Thermal & Mechanical
Characteristics
PackageNo.
Rth(j-c)
(K/W)
Rth(c-s)
(K/W)
0.85
0.020
0.024
RM6
0.80
0.022
0.017
RM2
1700 Volt HVDIODE Modules
3300 Volt HVDIODE Modules
RM400DY-66S
3300
400
6000
3200
3.75 0.15 200
0.75
0.0720
0.0360
RM1
RM400DG-66S
3300
400
10200
3200
2.80 0.30 270
1.00
0.0540
0.0480
RM4
RM600DY-66S 3300 60060004800 3.75
0.23
300
0.75
0.0480 0.0240
RM1
RM1000DC-66F
1.20 1150
0.75
0.0240
RM5
4
D
3300
1000
6000
9400
2.20 0.0260
RM1200DB-66S
3300
1200
6000
9600
3.00 0.75 850
0.75
0.0180
0.0160
RM3
RM1200DG-66S
3300
1200 10200
9600
3.00 0.90 800
1.00
0.0180
0.0160
RM4
RM1500DC-66F
3300
1500
6000
14000
2.20 1.85 1700
0.75
0.0160
0.0175
RM5
H
RM1200HE-66S
3300
1200
6000
9600
3.20 0.85 900
1.40
0.0200
0.0150
RM2
RM300DG-90S
4500
300
10200
2400
4.80 0.33 250
1.00
0.0660
0.0480
RM4
D
RM400DG-90F
4500
400
10200
3400
2.55 0.75 580
0.90
0.0585
0.0480
RM4
0.70
650
0.90
0.0200 0.0160
4500 Volt HVDIODE Modules
RM900DB-90S 4500 90060006400 4.00
RM3
RM800DG-90F 4500 800102006500
2.55
1.50
1040
0.90
0.0300 0.0240
RM4
RM1200DG-90F 4500 120010200 9800
2.55
2.25
1560
0.90
0.0200
0.0160
RM4
H
RM600HE-90S
4500
600
6000
4800
4.80 0.62 600
0.90
0.0390
0.0150
RM2
RM900HC-90S
4500
900
6000
7200
4.80 1.00 750
1.00
0.0210
0.0160
RM3
RM200DG-130S
6500
200
10200
1600
4.00 0.70 300
1.00
0.0660
0.0480
RM4
D
RM250DG-130F
6500
200
10200
2350
3.30 0.80 340
0.60
0.0675
0.0480
RM4
RM600DG-130S
6500
600
10200
4800
4.00 2.00 900
1.00
0.0220
0.0160 RM4
6500 Volt HVDIODE Modules
For detail test conditions please refer to data sheets.
70
4.02 High Voltage Diode Modules
Package RM1
Package RM2
Package RM3
Package RM4
Package RM5
Package RM6
4
Dimensions in mm
71
5.
High Voltage Integrated Circuits (HVIC)
Half Bridge Driver HVIC
This product is a semiconductor intergrated circuit designed to directly
drive the power MOS/IGBT modules of half bridge composition by
integrating the 1200V, 600V and 8/24V dielectric elements onto one chip.
The internal installation of high side/low side driver circuits, protective
circuits against the power supply voltage drop and interlocking circuits
enables a device to drive/control the power elements without using
the photocoupler from a logic circuit such as a microcomputer.
Applications
Most suitable for the following applied products to drive power
MOS/discrete IGBTs or IGBT modules for inverters:
5
•General inverters
•Air conditioners, refrigerators and washing machines
•AC servo motors
•DC brushless motors
•Automotive
•Illumination systems
72
5.
High Voltage Integrated Circuits (HVIC)
1200V
Floating
supply voltage
(V)
Output
current
(A)
Dead-time
control
Functions
Package
outline
1200
1.0
Input Signal
UV, NF, SC, FO, FORST, FOIN
24P2Q
Floating
supply voltage
(V)
Output
current
(A)
Dead-time
control
Functions
Package
outline
M81712FP
600
0.2/-0.5
Input Signal
UV, IL, NF
28X9R
M81706AFP
600
0.2/-0.35
Input Signal
UV, IL
8P2S
M81708FP
600
0.2/-0.35
Input Signal
UV, IL
16P2N
M81719FP
600
0.2/-0.35
Input Signal
UV, NF
8P2S
M81720FP
600
0.2/-0.35
Input Signal
UV, IL, NF
8P2S
M81721FP
600
1.0
Input Signal
UV, NF, SC, FO, FORST, FOIN
24P2Q
M81700FP
3rd
2
M81701FP
600
2.5
Input Signal
UV, IL, SD
16P2N
600
2.5
Input Signal
UV, IL
16P2N
M81702FP
600
2.5
Input Signal
UV, SD
16P2N
M81703FP
Half Bridge
M81709FP
600
2.5
Input Signal
UV
16P2N
600
2.5
Input Signal
UV, IL
16P2N
M81722FP
600
3.0
Input Signal
UV, NF
8P2S
M81729JFP
600
0.2/-0.35
Input Signal
UV, IL
8P2S
UV, IL compatible with M81706AFP
8P2S
UV, IL
16P2N
Driving
method
Number
of input- Generation
signals
Typename
Half Bridge2 3rdM81738FP
600V
Driving
method
3 Phase
Number
of input- Generation
signals
2x3ø
3rd
Typename
M81736FP
600
0.2/-0.35
Input Signal
2
4th
M81735FP
600
0.5
Input Signal
13rd
M81713FP
600
0.5
InternalUV
8P2S
UV
M81734FP600 0.5 Internal
compatible with M81713FP
1
4th
M81740FP
600
3.25
Internal
UV, SD
M81707FP
600
0.1
Input Signal UV
1x23rd
M81731FP
600
3.0
Input Signal UV, NF
Dual Half Bridge
UV
M81723FP
600
0.13/-0.1
Input Signal
compatible with M81707FP
1x2
4th
M81737FP
600
0.2
Input Signal UV
Single High side
8P2S
8P2S
16P2N
16P2N
16P2N
16P2N
1
2nd
M81705FP 600 0.15/-0.13UV
8P2S
1
3rd
M81725FP
8P2S
600
3.0
Output
current
(A)
Dead-time
control
UV, NF
24V
Driving
method
Number
of input- Generation
signals
Typename
M81711FP
Dual Low side
1x23rd
M81716FP
Floating
supply voltage
(V)
Functions
Package
outline
24
1.01/-0.8
Low active
8P2S
24
1.01/-0.8
High active
8P2S
UV: Under Voltage / IL: Inter Lock / NF: Input Noise Filter / SC: Short Current / SD: Shut Down /
SS: Soft Shutdown / FO: Failure Output / FOIN: FO Input / FORST: FO reset / CFO: Capacitor FO
All IC's are RoHS compliant.
73
5
5.
High Voltage Integrated Circuits (HVIC)
Package 8P2S (8pin 225mil SOP)
Package 16P2N (16pin 300mil SOP)
Package 24P2Q (24pin 300mil SSOP)
Package 28X9R (28pin 450mil SSOP)
Dimensions in mm
5
Reference: Front Page: © SeanPavonePhoto - istockphoto.com; Page 16: © Luftbildfotograf - Fotolia.com;
Page 49: © Africa Studio - Fotolia.com; Page 55: © PHB.cz - Fotolia.com; Page 72: © algre - Fotolia.com
74
6.
Power Loss Calculation Tool (MELCOSIM)
MELCOSIM 5
MELCOSIM is a software tool for a proper selection of MITSUBISHI ELECTRIC power
modules based on fast power loss and junction temperature calculation.
MELCOSIM is software designed for the power loss
calculation occurring in power modules under specific
user application conditions and for junction temperature rises as a consequence of power loss.
The latest version of MELCOSIM is available at
www.mitsubishielectric.com/semiconductors/
g Power modules g Simulation Software
Since the first version MELCOSIM 1.0 has been issued
in the year 2001, five versions of this software were
introduced through the Mitsubishi Electric website to
our customers. We are very pleased for
all comments and suggestion we have
received in order to develop and improve
the current version MELCOSIM 5.
6
75
Mitsubishi Electric Europe B.V.
UK Branch
Semiconductor Sales Office
Mitsubishi Electric Europe B.V.
Moscow Branch
Semiconductor Sales Office
Gothaer Straße 8
D-40880 Ratingen
Phone: +49 (0) 21 02/486 45 21
Fax:
+49 (0) 21 02/486 72 20
Travellers Lane, Hatfield
GB-Herts. AL 10 8XB
Phone: +44 17 07/27 89 07
Fax:
+44 17 07/27 89 97
Kosmodamianskaya Nab. 52 Bld. 3
113054 Moscow
Phone: +7 495 721 20 70
Fax:
+7 495 721 20 71
Mitsubishi Electric Europe B.V.
French Branch
Semiconductor Sales Office
Mitsubishi Electric Europe B.V.
Italian Branch
Semiconductor Sales Office
Spanish Representative Agent
for Mitsubishi Electric Europe
in Spain and Portugal
25, Boulevard des Bouvets
F-92741 Nanterre Cedex (Paris)
Phone: +33 1/55 68 55 68
Fax:
+33 1/55 68 57 39
Viale Colleoni 7 – Palazzo Sirio
I-20041 Agrate Brianza (Milano)
Phone: +39 039/60 53 10
Fax:
+39 039/60 53 212
C/ Las Hayas, 127
28922 Alcorcón (Madrid)
Phone: +34 9/16 43 68 05
MITSUBISHI ELECTRIC
Mitsubishi Electric Europe B.V.
German Branch
Semiconductor Sales Office
www.mitsubishichips.eu · www.mitsubishichips.com · [email protected]
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Selection Guide 2014
Gothaer Straße 8 · D-40880 Ratingen
Phone: +49 (0) 21 02/486 0 · Fax: +49 (0) 21 02/486 72 20
Power Devices
Mitsubishi Electric Europe B.V. (European Headquarters)
– Semiconductor European Business Group –
SF
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s
Power Devices
od
Power Devices
Selection Guide 2014
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