datasheet

SKM75GB12V
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
114
A
Tc = 80 °C
87
A
75
A
ICnom
ICRM
SEMITRANS® 2
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
225
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
97
A
Tc = 80 °C
73
A
75
A
Tj = 125 °C
Inverse diode
IF
SKM75GB12V
Tj = 175 °C
IFnom
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
IFRM
IFRM = 3xIFnom
225
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
430
A
-40 ... 175
°C
Tj
Module
It(RMS)
Visol
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
AC sinus 50Hz, t = 1 min
200
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Remarks
Tterminal = 80 °C
Tstg
rCE
Conditions
IC = 75 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 3 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
VCE = 25 V
VGE = 0 V
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.30
V
Tj = 150 °C
2.25
2.55
V
Tj = 25 °C
0.94
1.04
V
Tj = 150 °C
0.88
0.98
V
Tj = 25 °C
12.13
16.8
m
18.27
20.93
m
6
6.5
V
0.1
0.3
mA
Tj = 150 °C
5.5
Tj = 25 °C
Tj = 150 °C
4.5
nF
f = 1 MHz
0.44
nF
f = 1 MHz
0.442
nF
830
nC
VGE = - 8 V...+ 15 V
VCC = 600 V
IC = 75 A
VGE = ±15 V
RG on = 1.3 
RG off = 1.3 
di/dton = 3900 A/µs
di/dtoff = 1020 A/µs
du/dtoff = 9000 V/
µs
per IGBT
mA
f = 1 MHz
Tj = 150 °C
10.0

258
ns
Tj = 150 °C
32
ns
Tj = 150 °C
6.7
mJ
Tj = 150 °C
388
ns
Tj = 150 °C
62
ns
Tj = 150 °C
7.1
mJ
0.38
K/W
GB
© by SEMIKRON
Rev. 5 – 23.03.2011
1
SKM75GB12V
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 75 A
VGE = 0 V
chip
VF0
IRRM
Qrr
Err
Rth(j-c)
typ.
max.
Unit
Tj = 25 °C
2.17
2.49
V
Tj = 150 °C
2.11
2.42
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
11.6
13.2
m
Tj = 150 °C
IF = 75 A
Tj = 150 °C
di/dtoff = 2950 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
16.1
17.6
m
TC = 25 °C
0.65
m
TC = 125 °C
1
m
rF
SEMITRANS® 2
min.
85
A
10
µC
4.2
mJ
0.58
K/W
Module
SKM75GB12V
LCE
RCC'+EE'
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
30
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.04
to terminals M5
nH
0.05
K/W
3
5
Nm
2.5
5
Nm
Nm
w
160
g
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
GB
2
Rev. 5 – 23.03.2011
© by SEMIKRON
SKM75GB12V
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 5 – 23.03.2011
3
SKM75GB12V
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 5 – 23.03.2011
© by SEMIKRON
SKM75GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 5 – 23.03.2011
5