UNISONIC TECHNOLOGIES CO., LTD MGBR10S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR10S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc. FEATURES * Super low forward voltage drop * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10S50CL-TA3-T MGBR10S50CG-TA3-T MGBR10S50CL-TF3-T MGBR10S50CG-TF3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F Pin Assignment 1 2 3 A K A A K A Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-149.b MGBR10S50C Preliminary DIODE ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage VRWM 50 V Peak Repetitive Reverse Voltage VRRM 50 V Average Rectified Forward Current Per Leg 5 A IO (Rated VR-20KHz Square Wave) – 50% Total 10 A duty cycle Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 150 A Single Half Sine-Wave Superimposed on Rated Load Peak Repetitive Reverse Surge Current (2μS-1kHz) IRRM 2 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F θJC RATINGS 62.5 2 3.31 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.) PARAMETER Reverse Breakdown Voltage (Note 1) SYMBOL TEST CONDITIONS V(BR)R IR=0.50mA IF=5A, TJ=25°C Forward Voltage Drop VFM IF=5A, TJ=125°C VR=50V, TJ=25°C Leakage Current (Note 1) IRM VR=50V, TJ=125°C Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Thermal resistance junction to case mounted on heatsink. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 50 TYP MAX UNIT V 0.46 V 0.41 V 50 500 μA 15 50 mA 2 of 3 QW-R601-149.b MGBR10S50C Preliminary DIODE UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R601-149.b