HIGH-SPEED IDT70261S/L 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns (max.) – Industrial 20/25ns (max.) Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Standby: 1mW (typ.) Separate upper-byte and lower-byte control for multiplexed bus compatibility ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70261 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master, M/S = L for BUSY input on Slave Busy and Interrupt Flags On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port TTL-compatible, single 5V (±10%) power supply Available in 100-pin Thin Quad Flatpack Industrial temperature range (-40OC to +85OC) is available for selected speeds Functional Block Diagram R/WL UBL R/WR UBR LBL CEL OEL LBR CER OER I/O8L-I/O15L I/O0L-I/O7L I/O8R-I/O15R I/O Control I/O Control I/O0R-I/O7R (1,2) BUSYL A13L A0L (1,2) BUSYR Address Decoder MEMORY ARRAY 14 CEL OEL R/WL SEML (2) INTL Address Decoder A13R A0R 14 ARBITRATION INTERRUPT SEMAPHORE LOGIC M/S CER OER R/WR SEMR INTR(2) 3039 drw 01 NOTES: 1. (MASTER): BUSY is output; (SLAVE): BUSY is input. 2. BUSY and INT outputs are non-tri-stated push-pull. JANUARY 2009 1 ©2009 Integrated Device Technology, Inc. DSC 3039/10 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Description address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 750mW of power. The IDT70261 is packaged in a 100-pin TQFP. The IDT70261 is a high-speed 16K x 16 Dual-Port Static RAM. The IDT70261 is designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. This device provides two independent ports with separate control, Pin Configurations(1,2,3) 11/16/01 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 1 75 2 3 74 73 4 72 5 71 6 7 70 69 8 68 9 67 11 12 13 14 15 N/C N/C N/C A6L A5L A4L A3L A2L A1L A0L INTL BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R A5R N/C N/C N/C 66 10 IDT70261PF PN100-1(4) 65 100-Pin TQFP Top View(5) 62 64 63 61 17 60 59 18 58 19 57 20 21 56 55 22 54 23 53 16 52 51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 24 I/O7R I/O8R I/O9R I/O10R I/O11R I/O12R I/O13R I/O14R GND I/O15R OER R/WR GND SEMR CER UBR LBR A13R A12R A11R A10R A9R A8R A7R A6R N/C N/C N/C N/C I/O10L I/O11L I/O12L I/O13L GND I/O14L I/O15L VCC GND I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R I/O6R N/C N/C N/C N/C I/O9L I/O8L I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L GND I/O1L I/O0L OEL VCC R/WL SEML CEL UBL LBL A13L A12L A11L A10L A9L A8L A7L Index NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. Package body is approximately 14mm x 14mm x 1.4mm. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. 3039 drw 02 , Pin Names Left Port Right Port Names CEL CER Chip Enable R/WL R/WR Read/Write Enable OEL OER Output Enable A0L - A13L A0R - A13R Address I/O0L - I/O15L I/O0R - I/O15R Data Input/Output SEML SEMR Semaphore Enable UBL UBR Upper Byte Select LBL LBR Lower Byte Select INTL INTR Interrupt Flag BUSYL BUSYR Busy Flag M/S Master or Slave Select VCC Power GND Ground 3039 tbl 01 6.42 2 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Maximum Operating Temperature and Supply Voltage(1,2) Grade Commercial Industrial Recommended DC Operating Conditions Symbol Ambient Temperature GND Vcc 0OC to +70OC 0V 5.0V + 10% -40OC to +85OC 0V 5.0V + 10% NOTES: 1. This is the parameter TA. This is the "instant on"case temperature. Parameter VCC Supply Voltage GND Ground Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V 2.2 ____ Input High Voltage VIH (2) 6.0 V 3039 tbl 02 V IL Input Low Voltage (1) -0.5 ____ 0.8 V 3039 tbl 03 NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 10%. Truth Table I – Non-Contention Read/Write Control Inputs(1) Outputs CE R/W OE UB LB SEM I/O8-15 I/O0-7 H X X X X H High-Z High-Z Deselected: Power-Down X X X H H H High-Z High-Z Both Bytes Deselected L L X L H H DATAIN High-Z Write to Upper Byte Only L L X H L H High-Z DATAIN Write to Lower Byte Only L L X L L H DATAIN DATAIN Write to Both Bytes L H L L H H DATAOUT High-Z Read Upper Byte Only L H L H L H High-Z DATAOUT Read Lower Byte Only L H L L L H DATAOUT DATAOUT Read Both Bytes X X H X X X High-Z High-Z Outputs Disabled Mode 3039 tbl 04 NOTE: 1. A0L — A13L ≠ A 0R — A13R. Truth Table II – Semaphore Read/Write Control(1) Inputs Outputs CE R/W OE UB LB SEM I/O8-15 I/O0-7 H H L X X L DATAOUT DATAOUT Read Data in Semaphore Flag X H L H H L DATAOUT DATAOUT Read Data in Semaphore Flag H ↑ X X X L DATAIN DATAIN Write I/O0 into Semaphore Flag X ↑ X H H L DATAIN DATAIN Write I/O0 into Semaphore Flag L X X L X L ______ ______ Not Allowed L X X X L L ______ ______ Not Allowed Mode NOTE: 1. There are eight semaphore flags written to via I/O0 and read from all I/O's(I/O0 - I/O15 ). These eight semaphores are addressed by A0 - A 2. 3 6.42 3039 tbl 05 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Absolute Maximum Ratings(1) Symbol VTERM(2) Rating Capacitance(1) (TA = +25°C, f = 1.0Mhz) Commercial & Industrial Unit Terminal Voltage with Respect to GND -0.5 to +7.0 TBIAS Temperature Under Bias -55 to +125 o TSTG Storage Temperature -65 to +150 o IOUT DC Output Current Symbol V 50 C Parameter CIN Input Capacitance COUT Output Capacitance Conditions(2) Max. Unit VIN = 3dV 9 pF VOUT = 3dV 10 pF 3039 tbl 07 NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. C mA 3039 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VCC = 5.0V ± 10%) 70261S Symbol Parameter Test Conditions 70261L Min. Max. Min. Max. Unit |ILI| Input Leakage Current(1) VCC = 5.5V, VIN = 0V to V CC ___ 10 ___ 5 µA |ILO| Output Leakage Current CE = VIH, VOUT = 0V to V CC ___ 10 ___ 5 µA VOL Output Low Voltage IOL = 4mA ___ 0.4 ___ 0.4 V VOH Output High Voltage IOH = -4mA 2.4 ___ 2.4 ___ V 3039 tbl 08 NOTE: 1. At Vcc < 2.0V, input leakages are undefined. AC Test Conditions Input Pulse Levels 5V GND to 3.0V Input Rise/Fall Times 3ns Input Timing Reference Levels 1.5V Output Reference Levels Output Load 5V 893Ω DATAOUT BUSY INT 1.5V 893Ω DATAOUT 347Ω 30pF 347Ω 5pF* Figures 1 and 2 3039 tbl 09 , 3039 drw 03 Figure 1. AC Output Test Load 6.42 4 3039 drw 04 Figure 2. Output Test Load (for tLZ, tHZ, tWZ, tOW) *Including scope and jig. IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) (VCC = 5.0V ± 10%) 70261X15 Com'l Only Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - All CMOS Level Inputs) Full Standby Current (One Port - All CMOS Level Inputs) Test Condition Version CE = VIL, Outputs Disabled SEM = VIH f = fMAX(3) CEL = CER = VIH SEMR = SEML = VIH f = fMAX(3) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(3) SEMR = SEML = VIH 70261X20 Com'l & Ind 70261X25 Com'l & Ind Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Unit 180 180 315 275 170 170 305 265 mA COM'L S L 190 190 325 285 IND S L ____ ____ ____ ____ 170 345 ____ ____ 180 315 ____ ____ COM'L S L 35 35 95 70 30 30 85 60 25 25 85 60 IND S L ____ ____ ____ ____ 25 100 ____ ____ 30 80 ____ ____ COM'L S L 125 125 220 190 115 115 210 180 105 105 200 170 IND S L ____ ____ ____ ____ 105 230 ____ ____ 115 210 ____ ____ 1.0 0.2 15 5 1.0 0.2 15 5 Both Ports CEL and CER > VCC - 0.2V V IN > VCC - 0.2V or V IN < 0.2V, f = 0(4) SEMR = SEML > VCC - 0.2V COM'L S L 1.0 0.2 15 5 IND S L ____ ____ ____ ____ 1.0 30 ____ ____ 0.2 10 ____ ____ CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) SEMR = SEML > VCC - 0.2V V IN > VCC - 0.2V or V IN < 0.2V Active Port Outputs Disabled f = fMAX(3) COM'L S L 120 120 195 170 110 110 185 160 100 100 170 145 IND S L ____ ____ ____ ____ 100 200 ____ ____ 110 185 ____ ____ mA mA mA mA 3039 tbl 10 70261X35 Com'l Only Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - All CMOS Level Inputs) Full Standby Current (One Port - All CMOS Level Inputs) CEL = CER = VIH SEMR = SEML = VIH f = fMAX(3) Typ.(2) Max. Typ.(2) Max. Unit COM'L S L 160 160 295 255 150 150 270 230 mA IND S L ____ ____ ____ ____ mA ____ ____ ____ ____ COM'L S L 20 20 85 60 13 13 85 60 mA IND S L ____ ____ ____ ____ mA ____ ____ ____ ____ Test Condition CE = VIL, Outputs Disabled SEM = VIH f = fMAX(3) 70261X55 Com'l Only Version CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(3) SEMR = SEML = VIH COM'L S L 95 95 185 155 85 85 165 135 mA IND S L ____ ____ ____ ____ mA ____ ____ ____ ____ Both Ports CEL and CER > VCC - 0.2V V IN > VCC - 0.2V or V IN < 0.2V, f = 0(4) SEMR = SEML > VCC - 0.2V COM'L S L 1.0 0.2 15 5 1.0 0.2 15 5 mA IND S L ____ ____ ____ ____ mA ____ ____ ____ ____ CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) SEMR = SEML > VCC - 0.2V V IN > VCC - 0.2V or V IN < 0.2V Active Port Outputs Disabled f=fMAX(3) COM'L S L 90 90 160 135 80 80 135 110 mA IND S L ____ ____ ____ ____ mA ____ ____ ____ ____ NOTES: 1. 'X' in part numbers indicates power rating (S or L). 2. VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA (Typ.) 3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 5. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 5 6.42 3039 tbl 11 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) 70261X15 Com'l Only Symbol Parameter 70261X20 Com'l & Ind 70261X25 Com'l & Ind Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 15 ____ 20 ____ 25 ____ ns tAA Address Access Time ____ 15 ____ 20 ____ 25 ns Chip Enable Access Time (3) ____ 15 ____ 20 ____ 25 ns tABE Byte Enable Access Time (3) ____ 15 ____ 20 ____ 25 ns tAOE Output Enable Access Time ____ 10 ____ 12 ____ 13 ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ ns tLZ Output Low-Z Time(1,2) 3 ____ 3 ____ 3 ____ ns tHZ (1,2) ____ 10 ____ 12 ____ 15 ns 0 ____ 0 ____ 0 ____ ns ____ 15 ____ 20 ____ 25 ns ____ 10 ____ 12 ____ ns 15 ____ 20 ____ 25 tACE Output High-Z Time tPU Chip Enable to Power Up Time (2) (2) tPD Chip Disable to Power Down Time tSOP Semaphore Flag Update Pulse (OE or SEM) 10 Semaphore Address Access Time ____ tSAA ns 3039 tbl 12a 70261X35 Com'l Only Symbol Parameter 70261X55 Com'l Only Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 35 ____ 55 ____ ns tAA Address Access Time ____ 35 ____ 55 ns Chip Enable Access Time (3) ____ 35 ____ 55 ns tABE Byte Enable Access Time (3) ____ 35 ____ 55 ns tAOE Output Enable Access Time ____ 20 ____ 30 ns tOH Output Hold from Address Change 3 ____ 3 ____ ns 3 ____ 3 ____ ns ____ 15 ____ 25 ns 0 ____ 0 ____ ns tACE tLZ tHZ Output Low-Z Time (1,2) Output High-Z Time (1,2) (2) tPU Chip Enable to Power Up Time tPD Chip Disable to Power Down Time(2) ____ 35 ____ 50 ns tSOP Semaphore Flag Update Pulse (OE or SEM) 15 ____ 15 ____ ns Semaphore Address Access Time ____ 35 ____ 55 tSAA NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. 4. 'X' in part numbers indicates power rating (S or L). 6.42 6 ns 3039 tbl 12b IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Waveform of Read Cycles(5) tRC ADDR tAA (4) (4) tACE CE tAOE (4) OE tABE (4) UB, LB R/W tOH tLZ (1) DATAOUT VALID DATA (4) tHZ (2) BUSYOUT tBDD (3, 4) 3039 drw 05 NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD . 5. SEM = VIH. Timing of Power-Up Power-Down CE ICC tPU tPD 50% 50% ISB 3039 drw 06 7 6.42 , IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage (5) 70261X15 Com'l Only Symbol Parameter 70261X20 Com'l & Ind 70261X25 Com'l & Ind Min. Max. Min. Max. Min. Max. Unit 15 ____ 20 ____ 25 ____ ns tEW Chip Enable to End-of-Write (3) 12 ____ 15 ____ 20 ____ ns tAW Address Valid to End-of-Write 12 ____ 15 ____ 20 ____ ns tAS Address Set-up Time (3) 0 ____ 0 ____ 0 ____ ns 12 ____ 15 ____ 20 ____ ns 0 ____ 0 ____ 0 ____ ns 10 ____ 15 ____ 15 ____ ns ____ 10 ____ 12 ____ 15 ns 0 ____ 0 ____ 0 ____ ns WRITE CYCLE tWC tWP tWR tDW tHZ Write Cycle Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time (1,2) (4) tDH Data Hold Time tWZ Write Enable to Output in High-Z(1,2) ____ 10 ____ 12 ____ 15 ns tOW Output Active from End-of-Write (1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 3039 tbl 13a 70261X35 Com'l Only Symbol Parameter 70261X55 Com'l Only Min. Max. Min. Max. Unit 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write (3) 30 ____ 45 ____ ns tAW Address Valid to End-of-Write 30 ____ 45 ____ ns tAS Address Set-up Time (3) 0 ____ 0 ____ ns 25 ____ 40 ____ ns 0 ____ 0 ____ ns 15 ____ 30 ____ ns ____ 15 ____ 25 ns 0 ____ 0 ____ ns WRITE CYCLE tWC tWP tWR tDW Write Cycle Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write (1,2) tHZ Output High-Z Time tDH Data Hold Time (4) tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 25 ns tOW Output Active from End-of-Write (1,2,4) 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 3039 tbl 13b NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = V IL. Either condition must be valid for the entire t EW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). 6.42 8 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8) tWC ADDRESS tHZ (7) OE tAW CE or SEM (9) UB or LB (9) tAS (6) tWP (2) tWR (3) R/W tWZ (7) tOW (4) DATAOUT (4) tDW tDH DATAIN 3039 drw 07 Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing(1,5) tWC ADDRESS tAW CE or SEM (9) tAS (6) UB or LB tWR (3) tEW (2) (9) R/W tDW tDH DATAIN 3039 drw 08 NOTES: 1. R/W or CE or UB and LB = VIH during all address transitions. 2. A write occurs during the overlap (tEW or tWP ) of a CE = VIL and a R/W = VIL for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going VIH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM = VIL transition occurs simultaneously with or after the R/W = V IL transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE or R/W. 7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 2). 8. If OE = VIL during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW . If OE = VIH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP . 9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. 9 6.42 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Timing Waveform of Semaphore Read after Write Timing, Either Side(1) tOH tSAA VALID ADDRESS A0-A2 tAW VALID ADDRESS tWR tACE tEW SEM tSOP tDW DATAIN VALID I/O0 tAS tWP DATAOUT VALID(2) tDH R/W tSWRD tAOE OE Write Cycle Read Cycle 3039 drw 09 NOTES: 1. CE = VIH or UB and LB = VIH for the duration of the above timing (both write and read cycle). 2. "DATAOUT VALID" represents all I/O's (I/O0-I/O15 ) equal to the semaphore value. Timing Waveform of Semaphore Write Contention(1,3,4) A0"A"-A2"A" (2) SIDE "A" MATCH R/W"A" SEM"A" tSPS A0"B"-A2"B" (2) SIDE "B" MATCH R/W"B" SEM"B" , 3039 drw 10 NOTES: 1. DOR = DOL = V IL, CE R = CEL = VIH, or both UB & LB = VIH. 2. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH. 4. If tSPS is not satisfied, there is no guarantee which side will be granted the semaphore flag. 6.42 10 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6,7) 70261X15 Com'l Only Symbol Parameter 70261X20 Com'l & Ind 70261X25 Com'l & Ind Min. Max. Min. Max. Min. Max. Unit 15 ____ 20 ____ 20 ns 20 ____ 20 ns 20 ns BUSY TIMING (M/S=VIH) tBAA BUSY Access Time from Address Match ____ tBDA BUSY Disable Time from Address Not Matched ____ 15 ____ tBAC BUSY Acce ss Time from Chip Enable Low ____ 15 ____ 20 ____ tBDC BUSY Acce ss Time from Chip Enable High ____ 15 ____ 17 ____ 17 ns 5 ____ 5 ____ 5 ____ ns ____ 18 ____ 30 ____ 30 ns 12 ____ 15 ____ 17 ____ ns 0 ____ 0 ____ 0 ____ ns 12 ____ 15 ____ 17 ____ ns ____ 30 ____ 45 ____ 50 ns 25 ____ 30 ____ 35 tAPS Arbitration Priority Set-up Time tBDD BUSY Disable to Valid Data tWH Write Hold After BUSY (2) (3) (5) BUSY TIMING (M/S=VIL ) tWB BUSY Input to Write(4) tWH Write Hold After BUSY (5) PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay(1) Write Data Valid to Read Data Delay (1) ____ ns 3039 tbl 14a 70261X35 Com'l Only Symbol Parameter 70261X55 Com'l Only Min. Max. Min. Max. Unit 20 ____ 45 ns BUSY TIMING (M/S=VIH) tBAA BUSY Access Time from Address Match ____ tBDA BUSY Disable Time from Address Not Matched ____ 20 ____ 40 ns tBAC BUSY Acce ss Time from Chip Enable Low ____ 20 ____ 40 ns tBDC BUSY Acce ss Time from Chip Enable High ____ 20 ____ 35 ns tAPS Arbitration Priority Set-up Time (2) 5 ____ 5 ____ ns tBDD BUSY Disable to Valid Data(3) ____ 35 ____ 40 ns tWH Write Hold After BUSY 25 ____ 25 ____ ns 0 ____ 0 ____ ns 25 ____ 25 ____ ns (5) BUSY TIMING (M/S=VIL ) tWB BUSY Input to Write(4) tWH Write Hold After BUSY (5) PORT-TO-PORT DELAY TIMING tWDD Write Pulse to Data Delay(1) ____ 60 ____ 80 ns tDDD Write Data Valid to Read Data Delay (1) ____ 45 ____ 65 ns 3039 tbl 14b NOTES: 1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Wave form of Write with Port-to-Port Read and BUSY (M/S = V IH)". 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual). 4. To ensure that the write cycle is inhibited on port "B" during contention on port "A". 5. To ensure that a write cycle is completed on port "B" after contention on port "A". 6. 'X' in part numbers indicates power rating (S or L). 11 6.42 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)(2,4,5) tWC MATCH ADDR"A" tWP R/W"A" tDW tDH VALID DATAIN "A" tAPS (1) MATCH ADDR"B" tBAA tBDA tBDD BUSY"B" tWDD DATAOUT "B" VALID tDDD (3) NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (SLAVE). 2. CEL = CER = V IL. 3. OE = VIL for the reading port. 4. If M/S = VIL (slave), BUSY is an input. Then for this example BUSY"A" = VIH and BUSY"B" input is shown above. 5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 3039 drw 11 Timing Waveform of Write with BUSY (M/S = VIL) tWP R/W"A" tWB (3) BUSY"B" tWH R/W"B" (1) (2) , 3039 drw 12 NOTES: 1. tWH must be met for both BUSY input (SLAVE) and output (MASTER). 2. BUSY is asserted on port "B" blocking R/W"B" , until BUSY"B" goes HIGH. 3. tWB is only for the “SLAVE” version. 6.42 12 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Waveform of BUSY Arbitration Controlled by CE Timing (M/S = VIH)(1) ADDR"A" and "B" ADDRESSES MATCH CE"A" tAPS (2) CE"B" tBAC tBDC BUSY"B" 3039 drw 13 Waveform of BUSY Arbitration Cycle Controlled by Address Match Timing (M/S = VIH)(1) ADDR"A" ADDRESS "N" tAPS (2) ADDR"B" MATCHING ADDRESS "N" tBAA tBDA BUSY"B" 3039 drw 14 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”. 2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted. AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) 70261X15 Com'l Only Symbol Parameter 70261X20 Com'l & Ind 70261X25 Com'l & Ind Min. Max. Min. Max. Min. Max. Unit INTERRUPT TIMING tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns 15 ____ 20 ____ 20 ns 15 ____ 20 ____ 20 tINS tINR Interrupt Set Time ____ Interrupt Reset Time ____ ns 3039 tbl 15a 70261X35 Com'l Only Symbol Parameter 70261X55 Com'l Only Min. Max. Min. Max. Unit 0 ____ 0 ____ ns 0 ____ 0 ____ ns 25 ____ 40 ns 25 ____ 40 ns INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time ____ Interrupt Reset Time ____ 3039 tbl 15b NOTES: 1. 'X' in part numbers indicates power rating (S or L). 13 6.42 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Waveform of Interrupt Timing(1) tWC ADDR"A" INTERRUPT SET ADDRESS (2) tAS (3) tWR (4) CE"A" R/W"A" tINS (3) INT"B" 3039 drw 15 tRC INTERRUPT CLEAR ADDRESS ADDR"B" (2) tAS (3) CE"B" OE"B" tINR (3) INT"B" 3039 drw 16 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”. 2. See Interrupt Truth Table. 3. Timing depends on which enable signal (CE or R/W) is asserted last. 4. Timing depends on which enable signal (CE or R/W) is de-asserted first. Truth Tables Truth Table III — Interrupt Flag(1) Left Port R/WL L X X X CEL L X X L OEL X X X L Right Port A13L-A0L 3FFF X X 3FFE INTL X R/WR X CER X OER X A13R-A0R X INTR Function (2) Set Right INTR Flag (3) L X L L 3FFF H Reset Right INTR Flag (3) L L X 3FFE X Set Left INTL Flag (2) X X X X X Reset Left INTL Flag X L H 3039 tbl 16 NOTES: 1. Assumes BUSYL = BUSYR =VIH. 2. If BUSYL = V IL, then no change. 3. If BUSYR = VIL, then no change. 6.42 14 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Truth Table IV — Address BUSY Arbitration Inputs Outputs CEL CER AOL-A13L AOR-A13R BUSYL(1) BUSYR(1) Function X X NO MATCH H H Normal H X MATCH H H Normal X H MATCH H H Normal L L MATCH (2) (2) Write Inhibit(3) 3039 tbl 17 NOTES: 1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the IDT70261 are push-pull, not open drain outputs. On slaves the BUSY input internally inhibits writes. 2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. Truth Table V — Example of Semaphore Procurement Sequence(1,2,3) Functions D0 - D15 Left D0 - D15 Right Status No Action 1 1 Semaphore free Le ft Port Writes "0" to Semaphore 0 1 Left port has semaphore token Rig ht Port Writes "0" to Semaphore 0 1 No change. Right side has no write access to semaphore Le ft Port Writes "1" to Semaphore 1 0 Right port obtains semaphore token Le ft Port Writes "0" to Semaphore 1 0 No change. Left port has no write access to semaphore Rig ht Port Writes "1" to Semaphore 0 1 Left port obtains semaphore token Le ft Port Writes "1" to Semaphore 1 1 Semaphore free Rig ht Port Writes "0" to Semaphore 1 0 Right port has semaphore token Rig ht Port Writes "1" to Semaphore 1 1 Semaphore free Le ft Port Writes "0" to Semaphore 0 1 Left port has semaphore token Le ft Port Writes "1" to Semaphore 1 1 Semaphore free NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70261. 2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15 ). These eight semaphores are addressed by A0 - A2. 3. CE = VIH, SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table. 3039 tbl 18 Functional Description The IDT70261 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70261 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = VIH). When a port is enabled, access to the entire memory array is permitted. Interrupts If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location 3FFE (HEX), where a write is defined as CER = R/WR = VIL per Truth Table III. The left port clears the interrupt through access of address location 3FFE when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location 3FFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location 3FFF. The message (16 bits) at 3FFE or 3FFF is user-defined since it is an addressable SRAM location. If the interrupt function is not used, address locations 3FFE and 3FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. 15 6.42 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Busy Logic MASTER Dual Port RAM BUSYL BUSYL MASTER Dual Port RAM BUSYL CE BUSYR CE BUSYR SLAVE Dual Port RAM BUSYL SLAVE Dual Port RAM BUSYL CE BUSYR DECODER Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a BUSY indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of BUSY logic is not desirable, the BUSY logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins high. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for that port low. The BUSY outputs on the IDT 70261 RAM in master mode, are pushpull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the BUSY indication for the resulting array requires the use of an external AND gate. CE BUSYR BUSYR , 3039 drw 17 Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70261 RAMs. Width Expansion with Busy Logic Master/Salve Arrays When expanding an IDT70261 RAM array in width while using BUSY logic, one master part is used to decide which side of the RAM array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the BUSY signal as a write inhibit signal. Thus on the IDT70261 RAM the BUSY pin is an output if the part is used as a master (M/S pin = VIH), and the BUSY pin is an input if the part used as a slave (M/S pin = VIL) as shown in Figure 3. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The BUSY arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with either the R/W signal or the byte enables. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. Semaphores The IDT70261 is an extremely fast Dual-Port 16K x 16 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the DualPort RAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port RAM or any other shared resource. The Dual-Port RAM features a fast access time, and both ports are completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from, or written to, at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port RAM enable, and SEM, the semaphore enable. The CE and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table V where CE and SEM are both HIGH. Systems which can best use the IDT70261 contain multiple processors or controllers and are typically very high-speed systems which are software controlled or software intensive. These systems can benefit from a performance increase offered by the IDT70261's hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT70261 does not use its semaphore flags to control any resources through hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very highspeed systems. How the Semaphore Flags Work The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request 6.42 16 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active low. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT70261 in a separate memory space from the Dual-Port RAM. This address space is accessed by placing a low input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, OE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Table V). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thorough discussion on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read value is latched into one side’s output register when that side's semaphore select (SEM) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (SEM or OE) to go inactive or the output will never change. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Table V). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag LOW and the other side HIGH. This condition will continue until a one is written to the same semaphore request latch. Should the other side’s semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip L PORT R PORT SEMAPHORE REQUEST FLIP FLOP D0 D Q SEMAPHORE REQUEST FLIP FLOP Q D WRITE SEMAPHORE READ D0 WRITE SEMAPHORE READ , 3039 drw 18 Figure 4. IDT70261 Semaphore Logic over to the other side as soon as a one is written into the first side’s request latch. The second side’s flag will now stay low until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. Using Semaphores—Some Examples Perhaps the simplest application of semaphores is their application as resource markers for the IDT70261’s Dual-Port RAM. Say the 16K x 16 RAM was to be divided into two 8K x 16 blocks which were to be dedicated at any one time to servicing either the left or right port. Semaphore 0 could be used to indicate the side which would control the lower section of memory, and Semaphore 1 could be defined as the indicator for the upper section of memory. To take a resource, in this example the lower 8K of Dual-Port RAM, the processor on the left port could write and then read a zero in to Semaphore 0. If this task were successfully completed (a zero was read back rather than a one), the left processor would assume control of the lower 8K. Meanwhile the right processor was attempting to gain control 17 6.42 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges of the resource after the left processor, it would read back a one in response to the zero it had attempted to write into Semaphore 0. At this point, the software could choose to try and gain control of the second 8K section by writing, then reading a zero into Semaphore 1. If it succeeded in gaining control, it would lock out the left side. Once the left side was finished with its task, it would write a one to Semaphore 0 and may then try to gain access to Semaphore 1. If Semaphore 1 was still occupied by the right side, the left side could undo its semaphore request and perform other tasks until it was able to write, then read a zero into Semaphore 1. If the right processor performs a similar task with Semaphore 0, this protocol would allow the two processors to swap 8K blocks of Dual-Port RAM with each other. The blocks do not have to be any particular size and can even be variable, depending upon the complexity of the software using the semaphore flags. All eight semaphores could be used to divide the DualPort RAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides rather than being given a common meaning as was shown in the example above. Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “off-limits” to the CPU, both the CPU and the I/O devices could access their assigned portions of memory continuously without any wait states. Semaphores are also useful in applications where no memory “WAIT” state is available on one or both sides. Once a semaphore handshake has been performed, both processors can access their assigned RAM segments at full speed. Another application is in the area of complex data structures. In this case, block arbitration is very important. For this application one processor may be responsible for building and updating a data structure. The other processor then reads and interprets that data structure. If the interpreting processor reads an incomplete data structure, a major error condition may exist. Therefore, some sort of arbitration must be used between the two different processors. The building processor arbitrates for the block, locks it and then is able to go in and update the data structure. When the update is completed, the data structure block is released. This allows the interpreting processor to come back and read the complete data structure, thereby guaranteeing a consistent data structure. 6.42 18 IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Ordering Information XXXXX A 999 A A Device Type Power Speed Package Process/ Temperature Range Blank I(1) Commercial (0°C to +70°C) Industrial (-40°C to +85°C) PF 100-pin TQFP (PN100-1) 15 20 25 35 55 Commercial Commercial & Industrial Commercial & Industrial Commercial Only Commercial Only S L Standard Power Low Power 70261 256K (16K x 16) Dual-Port RAM with Interrupt NOTE: Speed in nanoseconds 3039 drw 19 1. Contact your local sales office for Industrial temp range for other speeds, packages and powers. Datasheet Document History 1/14/99: 6/4/99: 2/18/00: 5/22/00: 11/20/01: 01/29/09: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Pages 2 Added additional notes to pin configurations Changed drawing format Page 1 Corrected DSC number Added Industrial Temperature Ranges and removed related notes Replaced IDT logo Changed ±200mV in table and waveform notes to 0mV Page 3 Clarified TA parameter Page 4 Increased storage temperature parameter Page 5 DC Electrical parameters–changed wording from open to disabled Page 2 Added date revision for pin configuration Page 5 Removed Industrial temp for standard power 20ns speed from DC Electrical Characteristics Removed Industrial temp for low power 25ns speed from DC Electrical Characteristics Removed Industrial temp for standard and low power for 35ns & 55ns speeds from DC Electrical Characteristics Pages 6,8,11&13 Removed Industrial temp for 35ns and 55ns speeds from AC Electrical Characteristics Page 19 Removed Industrial temp from 35ns and 55ns in ordering information Page 19 Removed "IDT" from orderable part number CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 19 6.42 for Tech Support: 408-284-2794 [email protected] ,