Si5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra-Low On-Resistance APPLICATIONS • Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Longer Battery Life 1206-8 ChipFET® 1 S D D D D Marking Code D D G BP G XXX Lot Traceability and Date Code S Part # Code D Bottom View Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free) Si5499DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±5 TC = 70 °C TA = 25 °C ID IDM TC = 25 °C Continuous Source-Drain Diode Currenta, b TA = 25 °C IS TC = 25 °C TC = 70 °C Maximum Power Dissipationa, b TA = 25 °C Soldering Recommendations (Peak Temperature) c, d - 6a, b, e A - 25 - 5.2 - 2.1a, b 6.2 PD 4 2.5a, b W 1.6a, b TA = 70 °C Operating Junction and Storage Temperature Range - 6e - 5.6a, b TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) V - 6e TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b Unit TJ, Tstg - 55 to 150 260 °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73321 S-83054-Rev. C, 29-Dec-08 www.vishay.com 1 Si5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t≤5s RthJA 48 50 Steady State RthJF 17 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 95 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs ID = - 250 µA VDS = VGS, ID = - 250 µA V 6 mV/°C 2.3 - 0.35 VDS = VGS, ID = - 5 mA - 0.8 - 0.55 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V - 25 V nA µA A VGS = - 4.5 V, ID = - 5.1 A 0.030 0.036 VGS = - 2.5 V, ID = - 4.6 A 0.037 0.045 VGS = - 1.8 V, ID = - 4.3 A 0.046 0.056 VGS = - 1.5 V, ID = - 1.3 A 0.057 0.077 VDS = - 4 V, ID = - 5.1 A 18 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 1290 VDS = - 4 V, VGS = 0 V, f = 1 MHz pF 420 270 VDS = - 4 V, VGS = - 8 V, ID = - 6 A VDS = - 4 V, VGS = - 4.5 V, ID = - 6 A 23 35 14 21 1.7 2.7 f = 1 MHz td(on) Ω 8 10 15 70 110 60 90 tf 30 45 td(on) 8 15 70 110 55 85 55 85 tr td(off) tr td(off) tf nC VDD = - 4 V, RL = 0.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 4 V, RL = 0.7 Ω ID ≅ - 5.6 A, VGEN = - 8 V, Rg = 1 Ω ns Document Number: 73321 S-83054-Rev. C, 29-Dec-08 Si5499DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -6 - 25 IS = - 2.1 A, VGS = 0 V IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.7 - 1.2 V 45 70 ns 18 27 nC 18 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73321 S-83054-Rev. C, 29-Dec-08 www.vishay.com 3 Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 10 VGS = 5 thru 2.5 V 2V 8 ID - Drain Current (A) ID - Drain Current (A) 20 15 1.5 V 10 5 6 4 TC = 125 °C 2 25 °C 1V 0 0.0 0.5 1.0 1.5 - 55 °C 0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 2000 VGS = 1.5 V 1600 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.09 VGS = 1.8 V 0.07 0.06 0.05 VGS = 2.5 V Ciss 1200 800 Coss 0.04 400 VGS = 4.5 V 0.03 Crss 0.02 0 0 5 10 15 20 25 0 1 ID - Drain Current (A) 2 4 5 6 7 8 125 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.4 8 ID = 5.1 A ID = 6 A 7 1.3 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3 6 5 VDS = 4 V 4 VDS = 5.6 V 3 2 1.2 VGS = 4.5 V 1.1 1.0 0.9 0.8 1 0 0 www.vishay.com 4 5 10 15 20 25 0.7 - 50 - 25 0 25 50 75 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73321 S-83054-Rev. C, 29-Dec-08 Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 RDS(on) - Drain-to-Source On-Resistance (Ω) IS - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 1 0.0 ID = 5.1 A 0.08 0.06 TA = 125 °C TA = 25 °C 0.04 0.02 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 50 0.6 40 0.5 Power (W) VGS(th) (V) ID = 250 µA 0.4 0.3 0.2 - 50 30 20 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 0.1 0.01 0.01 100 ms 1s 10 s DC TA = 25 °C Single Pulse 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73321 S-83054-Rev. C, 29-Dec-08 www.vishay.com 5 Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 14 ID - Drain Current (A) 12 10 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73321 S-83054-Rev. C, 29-Dec-08 Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 84 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73321. Document Number: 73321 S-83054-Rev. C, 29-Dec-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1