7/8-Bit Single/Dual SPI Digital POT with Non-Volatile Memory

MCP414X/416X/424X/426X
7/8-Bit Single/Dual SPI Digital POT with
Non-Volatile Memory
Features
Description
• Single or Dual Resistor Network options
• Potentiometer or Rheostat configuration options
• Resistor Network Resolution
- 7-bit: 128 Resistors (129 Steps)
- 8-bit: 256 Resistors (257 Steps)
• RAB Resistances options of:
- 5 kΩ
- 10 kΩ
- 50 kΩ
- 100 kΩ
• Zero-Scale to Full-Scale Wiper operation
• Low Wiper Resistance: 75Ω (typical)
• Low Tempco:
- Absolute (Rheostat): 50 ppm typical
(0°C to 70°C)
- Ratiometric (Potentiometer): 15 ppm typical
• Non-volatile Memory
- Automatic Recall of Saved Wiper Setting
- WiperLock™ Technology
• SPI serial interface (10 MHz, modes 0,0 & 1,1)
- High-Speed Read/Writes to wiper registers
- Read/Write to Data EEPROM registers
- Serially enabled EEPROM write protect
- SDI/SDO multiplexing (MCP41X1 only)
• Resistor Network Terminal Disconnect Feature
via:
- Shutdown pin (SHDN)
- Terminal Control (TCON) Register
• Write Protect Feature:
- Hardware Write Protect (WP) Control pin
- Software Write Protect (WP) Configuration bit
• Brown-out reset protection (1.5V typical)
• Serial Interface Inactive current (2.5 uA typical)
• High-Voltage Tolerant Digital Inputs: Up to 12.5V
• Supports Split Rail Applications
• Internal weak pull-up on all digital inputs
• Wide Operating Voltage:
- 2.7V to 5.5V - Device Characteristics
Specified
- 1.8V to 5.5V - Device Operation
• Wide Bandwidth (-3dB) Operation:
- 2 MHz (typical) for 5.0 kΩ device
• Extended temperature range (-40°C to +125°C)
The MCP41XX and MCP42XX devices offer a wide
range of product offerings using an SPI interface.
WiperLock Technology allows application-specific
calibration settings to be secured in the EEPROM.
Package Types (top view)
MCP41X1
Single Potentiometer
1
2
3
4
CS
SCK
SDI/SDO
VSS
8
7
6
5
MCP41X2
Single Rheostat
CS 1
8 VDD
SCK 2
7 SDO
SDI 3
6 P0B
5 P0W
VSS 4
VDD
P0B
P0W
P0A
PDIP, SOIC, MSOP
PDIP, SOIC, MSOP
CS 1
8 VDD
CS 1
7 P0B
SCK 2
EP
9
VSS 4
6 P0W
SDI 3
5 P0A
VSS 4
5 P0W
SDO
12 WP
2
11 NC
EP
17
3
10 P0B
9 P0W
5
6
7
8
P0A
4
P1A
PDIP, SOIC, TSSOP
16 15 14 13
1
P1B
VDD
SDO SCK
SHDN SDI
WP
P0B VSS
P0W V
SS
P0A
P1W
14
13
12
11
10
9
8
VDD
CS
MCP42X1 Dual Potentiometers
1
2
3
4
5
6
7
6 P0B
3x3 DFN*
3x3 DFN*
CS
SCK
SDI
VSS
P1B
P1W
P1A
7 SDO
EP
9
SHDN
SCK 2
SDI/SDO 3
8 VDD
4x4 QFN*
MCP42X2 Dual Rheostat
CS
SCK
SDI
VSS
P1B
1
2
3
4
5
10
9
8
7
6
MSOP, DFN
CS 1
VDD
SDO SCK 2
P0B
P0W SDI 3
P1W VSS 4
10 VDD
EP
11
9 SDO
8 P0B
7 P0W
6 P1W
P1B 5
3x3 DFN*
* Includes Exposed Thermal Pad (EP); see Table 3-1.
© 2008 Microchip Technology Inc.
DS22059B-page 1
MCP414X/416X/424X/426X
Device Block Diagram
VDD
VSS
CS
SCK
SDI
SDO
WP
SHDN
For Dual Potentiometer
Devices Only
Power-up/
Brown-out
Control
P0A
Resistor
Network 0
(Pot 0)
P0W
Wiper 0
& TCON
Register
SPI Serial
Interface
Module &
Control
Logic
(WiperLock™
Technology)
P0B
P1A
Resistor
Network 1
(Pot 1)
Memory (16x9)
Wiper0 (V & NV)
Wiper1 (V & NV)
TCON
STATUS
Data EEPROM
(10 x 9-bits)
P1W
Wiper 1
& TCON
Register
P1B
For Dual Resistor Network
Devices Only
1
MCP4141
1 Potentiometer (1) SPI
Rheostat
Mid-Scale 5.0, 10.0, 50.0, 100.0
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
129 1.8V to 5.5V
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
129 2.7V to 5.5V
75
VDD
Operating
Range (2)
129 1.8V to 5.5V
MCP4142
1
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
129 2.7V to 5.5V
1 Potentiometer (1) SPI
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
257 1.8V to 5.5V
MCP4152 (3)
1
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
257 1.8V to 5.5V
MCP4161
1 Potentiometer (1) SPI
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
257 2.7V to 5.5V
MCP4162
1
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
257 2.7V to 5.5V
MCP4231 (3)
2 Potentiometer (1) SPI
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
129 1.8V to 5.5V
2
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
129 1.8V to 5.5V
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
129 2.7V to 5.5V
MCP4232
Rheostat
Rheostat
Rheostat
SPI
No
RAB Options (kΩ)
Wiper
- RW
(Ω)
MCP4151 (3)
(3)
Rheostat
SPI
RAM
Resistance (typical)
# of Steps
MCP4132 (3)
POR Wiper
Setting
1 Potentiometer (1) SPI
Wiper
Configuration
WiperLock
Technology
MCP4131 (3)
Device
Memory
Type
Control
Interface
# of POTs
Device Features
SPI
SPI
SPI
MCP4241
2 Potentiometer (1) SPI
MCP4242
2
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
129 2.7V to 5.5V
MCP4251 (3)
2 Potentiometer (1) SPI
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
257 1.8V to 5.5V
MCP4252 (3)
2
RAM
No
Mid-Scale 5.0, 10.0, 50.0, 100.0
75
257 1.8V to 5.5V
MCP4261
2 Potentiometer (1) SPI
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
257 2.7V to 5.5V
2
EE
Yes
NV Wiper 5.0, 10.0, 50.0, 100.0
75
257 2.7V to 5.5V
MCP4262
Note 1:
2:
3:
Rheostat
Rheostat
Rheostat
SPI
SPI
SPI
Floating either terminal (A or B) allows the device to be used as a Rheostat (variable resistor).
Analog characteristics only tested from 2.7V to 5.5V unless otherwise noted.
Please check Microchip web site for device release and availability
DS22059B-page 2
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Voltage on VDD with respect to VSS ............... -0.6V to +7.0V
Voltage on CS, SCK, SDI, SDI/SDO, WP, and
SHDN with respect to VSS ...................................... -0.6V to 12.5V
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V
Input clamp current, IIK
(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
Output clamp current, IOK
(VO < 0 or VO > VDD) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of VSS pin .................................100 mA
Maximum current into VDD pin ....................................100 mA
Maximum current into PXA, PXW & PXB pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
.....................................................................-40°C to +125°C
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins .................................. ≥ 4 kV (HBM),
.......................................................................... ≥ 300V (MM)
Maximum Junction Temperature (TJ) ......................... +150°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOI x IOL)
© 2008 Microchip Technology Inc.
DS22059B-page 3
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Supply Voltage
VDD
2.7
—
5.5
V
1.8
—
2.7
V
Serial Interface only.
VSS
—
12.5V
V
VDD ≥
4.5V
VSS
—
VDD +
8.0V
V
VDD <
4.5V
—
—
1.65
V
RAM retention voltage (VRAM) < VBOR
CS, SDI, SDO,
SCK, WP, SHDN
pin Voltage Range
VHV
VDD Start Voltage
to ensure Wiper
Reset
VBOR
VDD Rise Rate to
ensure Power-on
Reset
VDDRR
Delay after device
exits the reset
state
(VDD > VBOR)
TBORD
—
10
20
µs
IDD
—
—
450
µA
Serial Interface Active,
VDD = 5.5V, CS = VIL, SCK @ 5 MHz,
write all 0’s to volatile Wiper 0 (address
0h)
—
—
1
mA
EE Write Current,
VDD = 5.5V, CS = VIL, SCK @ 5 MHz,
write all 0’s to non-volatile Wiper 0
(address 2h)
—
2.5
5
µA
Serial Interface Inactive,
CS = VIH, VDD = 5.5V
—
0.55
1
mA
Serial Interface Active,
VDD = 5.5V, CS = VIHH,
SCK @ 5 MHz,
decrement non-volatile Wiper 0
(address 2h)
Supply Current
(Note 10)
(Note 9)
The CS pin will be at one
of three input levels
(VIL, VIH or VIHH). (Note 6)
V/ms
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
DS22059B-page 4
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
Parameters
Resistance
(± 20%)
Resolution
Step Resistance
Nominal
Resistance Match
Wiper Resistance
(Note 3, Note 4)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Sym
Min
Typ
Max
Units
Conditions
RAB
4.0
5
6.0
kΩ
-502 devices (Note 1)
8.0
10
12.0
kΩ
-103 devices (Note 1)
40.0
50
60.0
kΩ
-503 devices (Note 1)
80.0
100
120.0
kΩ
-104 devices (Note 1)
N
257
Taps
8-bit
No Missing Codes
129
Taps
7-bit
No Missing Codes
—
RAB /
(256)
—
Ω
8-bit
Note 6
—
RAB /
(128)
—
Ω
7-bit
Note 6
|RAB0 - RAB1|
/ RAB
—
0.2
1.25
%
MCP42X1 devices only
|RBW0 - RBW1|
/ RBW
—
0.25
1.5
%
MCP42X2 devices only,
Code = Full-Scale
RW
—
75
160
Ω
VDD = 5.5 V, IW = 2.0 mA, code = 00h
—
75
300
Ω
VDD = 2.7 V, IW = 2.0 mA, code = 00h
—
50
—
ppm/°C TA = -20°C to +70°C
—
100
—
ppm/°C TA = -40°C to +85°C
—
150
—
ppm/°C TA = -40°C to +125°C
ppm/°C Code = Midscale (80h or 40h)
RS
Nominal
Resistance
Tempco
ΔRAB/ΔT
Ratiometeric
Tempco
ΔVWB/ΔT
—
15
—
Resistor Terminal
Input Voltage
Range (Terminals
A, B and W)
VA,VW,VB
Vss
—
VDD
V
Maximum current
through A, W or B
IW
—
—
2.5
mA
Note 6, Worst case current through
wiper when wiper is either Full-Scale or
Zero Scale.
Leakage current
into A, W or B
IWL
—
100
—
nA
MCP4XX1 PxA = PxW = PxB = VSS
—
100
—
nA
MCP4XX2 PxB = PxW = VSS
Note 5, Note 6
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
© 2008 Microchip Technology Inc.
DS22059B-page 5
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
Parameters
Full-Scale Error
(MCP4XX1 only)
(8-bit code =
100h,
7-bit code = 80h)
Zero-Scale Error
(MCP4XX1 only)
(8-bit code = 00h,
7-bit code = 00h)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Sym
Min
Typ
Max
Units
VWFSE
-6.0
-0.1
—
LSb
-4.0
-0.1
—
LSb
-3.5
-0.1
—
LSb
-2.0
-0.1
—
LSb
-0.8
-0.1
—
LSb
-0.5
-0.1
—
LSb
-0.5
-0.1
—
-0.5
-0.1
—
—
+0.1
+6.0
LSb
VWZSE
Potentiometer
Integral
Non-linearity
INL
Potentiometer
Differential
Non-linearity
DNL
Bandwidth -3 dB
(See Figure 2-58,
load = 30 pF)
BW
Conditions
8-bit
3.0V ≤ VDD ≤ 5.5V
7-bit
3.0V ≤ VDD ≤ 5.5V
8-bit
3.0V ≤ VDD ≤ 5.5V
7-bit
3.0V ≤ VDD ≤ 5.5V
8-bit
3.0V ≤ VDD ≤ 5.5V
7-bit
3.0V ≤ VDD ≤ 5.5V
LSb
100 kΩ 8-bit
3.0V ≤ VDD ≤ 5.5V
LSb
7-bit
3.0V ≤ VDD ≤ 5.5V
5 kΩ
8-bit
3.0V ≤ VDD ≤ 5.5V
7-bit
3.0V ≤ VDD ≤ 5.5V
10 kΩ
8-bit
3.0V ≤ VDD ≤ 5.5V
—
+0.1
+3.0
LSb
—
+0.1
+3.5
LSb
—
+0.1
+2.0
LSb
—
+0.1
+0.8
LSb
5 kΩ
10 kΩ
50 kΩ
50 kΩ
7-bit
3.0V ≤ VDD ≤ 5.5V
8-bit
3.0V ≤ VDD ≤ 5.5V
—
+0.1
+0.5
LSb
7-bit
3.0V ≤ VDD ≤ 5.5V
—
+0.1
+0.5
LSb
100 kΩ 8-bit
3.0V ≤ VDD ≤ 5.5V
—
+0.1
+0.5
LSb
7-bit
3.0V ≤ VDD ≤ 5.5V
-1
±0.5
+1
LSb
8-bit
-0.5
±0.25
+0.5
LSb
7-bit
3.0V ≤ VDD ≤ 5.5V
MCP4XX1 devices only
(Note 2)
3.0V ≤ VDD ≤ 5.5V
MCP4XX1 devices only
(Note 2)
-0.5
±0.25
+0.5
LSb
8-bit
-0.25
±0.125
+0.25
LSb
7-bit
—
2
—
MHz
5 kΩ
—
2
—
MHz
—
1
—
MHz
—
1
—
MHz
—
200
—
kHz
8-bit
Code = 80h
—
200
—
kHz
7-bit
Code = 40h
—
100
—
kHz
100 kΩ 8-bit
Code = 80h
—
100
—
kHz
7-bit
Code = 40h
10 kΩ
50 kΩ
8-bit
Code = 80h
7-bit
Code = 40h
8-bit
Code = 80h
7-bit
Code = 40h
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
DS22059B-page 6
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
Parameters
Rheostat Integral
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Sym
R-INL
Min
Typ
Max
Units
-1.5
±0.5
+1.5
LSb
-8.25
+4.5
+8.25
LSb
-1.125
±0.5
+1.125
LSb
-6.0
+4.5
+6.0
LSb
-1.5
±0.5
+1.5
LSb
-5.5
+2.5
+5.5
LSb
-1.125
±0.5
+1.125
LSb
-4.0
+2.5
+4.0
LSb
-1.5
±0.5
+1.5
LSb
-2.0
+1
+2.0
LSb
-1.125
±0.5
+1.125
LSb
-1.5
+1
+1.5
LSb
-1.0
±0.5
+1.0
LSb
-1.5
+0.25
+1.5
LSb
-0.8
±0.5
+0.8
LSb
-1.125
+0.25
+1.125
LSb
Conditions
5 kΩ
8-bit
5.5V, IW = 900 µA
3.0V, IW = 480 µA
(Note 7)
7-bit
5.5V, IW = 900 µA
3.0V, IW = 480 µA
(Note 7)
10 kΩ
8-bit
5.5V, IW = 450 µA
3.0V, IW = 240 µA
(Note 7)
7-bit
5.5V, IW = 450 µA
3.0V, IW = 240 µA
(Note 7)
50 kΩ
8-bit
5.5V, IW = 90 µA
3.0V, IW = 48 µA
(Note 7)
7-bit
5.5V, IW = 90 µA
3.0V, IW = 48 µA
(Note 7)
100 kΩ 8-bit
5.5V, IW = 45 µA
3.0V, IW = 24 µA
(Note 7)
7-bit
5.5V, IW = 45 µA
3.0V, IW = 24 µA
(Note 7)
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
© 2008 Microchip Technology Inc.
DS22059B-page 7
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
Parameters
Rheostat
Differential
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Sym
Min
Typ
Max
Units
R-DNL
-0.5
±0.25
+0.5
LSb
-1.0
+0.5
+1.0
LSb
-0.375
±0.25
+0.375
LSb
-0.75
+0.5
+0.75
LSb
-0.5
±0.25
+0.5
LSb
-1.0
+0.25
+1.0
LSb
-0.375
±0.25
+0.375
LSb
-0.75
+0.5
+0.75
LSb
-0.5
±0.25
+0.5
LSb
-0.5
±0.25
+0.5
LSb
-0.375
±0.25
+0.375
LSb
-0.375
±0.25
+0.375
LSb
-0.5
±0.25
+0.5
LSb
-0.5
±0.25
+0.5
LSb
-0.375
±0.25
+0.375
LSb
-0.375
±0.25
+0.375
LSb
Conditions
5 kΩ
8-bit
5.5V, IW = 900 µA
3.0V (Note 7)
7-bit
5.5V, IW = 900 µA
3.0V (Note 7)
10 kΩ
8-bit
5.5V, IW = 450 µA
3.0V (Note 7)
7-bit
5.5V, IW = 450 µA
3.0V (Note 7)
8-bit
5.5V, IW = 90 µA
7-bit
5.5V, IW = 90 µA
100 kΩ 8-bit
5.5V, IW = 45 µA
7-bit
5.5V, IW = 45 µA
50 kΩ
3.0V (Note 7)
3.0V (Note 7)
3.0V (Note 7)
3.0V (Note 7)
Capacitance (PA)
CAW
—
75
—
pF
f =1 MHz, Code = Full-Scale
Capacitance (Pw)
CW
—
120
—
pF
f =1 MHz, Code = Full-Scale
Capacitance (PB)
CBW
—
75
—
pF
f =1 MHz, Code = Full-Scale
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
DS22059B-page 8
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
Parameters
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Sym
Min
Typ
Max
Units
Conditions
Digital Inputs/Outputs (CS, SDI, SDO, SCK, WP, SHDN)
Schmitt Trigger
High Input
Threshold
VIH
0.45 VDD
—
—
V
2.7V ≤ VDD ≤ 5.5V
(Allows 2.7V Digital VDD with
5V Analog VDD)
0.5 VDD
—
—
V
1.8V ≤ VDD ≤ 2.7V
Schmitt Trigger
Low Input
Threshold
VIL
—
—
0.2VDD
V
Hysteresis of
Schmitt Trigger
Inputs
VHYS
—
0.1VDD
—
V
High Voltage Input
Entry Voltage
VIHH
8.5
—
12.5 (6)
V
High Voltage Input
Exit Voltage
VIHH
—
—
VDD +
0.8V (6)
V
High Voltage Limit
VMAX
—
—
12.5 (6)
V
Pin can tolerate VMAX or less.
Output Low
Voltage (SDO)
VOL
Output High
Voltage (SDO)
VOH
Weak Pull-up /
Pull-down Current
IPU
CS Pull-up /
Pull-down
Resistance
Input Leakage
Current
Pin Capacitance
Threshold for WiperLock™ Technology
VSS
—
0.3VDD
V
IOL = 5 mA, VDD = 5.5V
VSS
—
0.3VDD
V
IOL = 1 mA, VDD = 1.8V
0.7VDD
—
VDD
V
IOH = -2.5 mA, VDD = 5.5V
0.7VDD
—
VDD
V
IOL = -1 mA, VDD = 1.8V
—
—
1.75
mA
Internal VDD pull-up, VIHH pull-down,
VDD = 5.5V, VCS = 12.5V
—
170
—
µA
CS pin, VDD = 5.5V, VCS = 3V
RCS
—
16
—
kΩ
VDD = 5.5V, VCS = 3V
IIL
-1
—
1
µA
VIN = VDD and VIN = VSS
CIN, COUT
—
10
—
pF
fC = 20 MHz
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
© 2008 Microchip Technology Inc.
DS22059B-page 9
MCP414X/416X/424X/426X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ TA ≤ +125°C (extended)
DC Characteristics
Parameters
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Sym
Min
Typ
Max
Units
Conditions
N
0h
—
1FFh
hex
8-bit device
0h
—
1FFh
hex
7-bit device
RAM (Wiper) Value
Value Range
EEPROM
Endurance
—
1M
—
Cycles
EEPROM Range
N
0h
—
1FFh
hex
Initial Factory
Setting
N
Endurance
EEPROM Programming Write
Cycle Time
80h
hex
8-bit
WiperLock Technology = Off
40h
hex
7-bit
WiperLock Technology = Off
tWC
—
5
10
ms
PSS
—
0.0015
0.0035
%/%
8-bit
VDD = 2.7V to 5.5V,
VA = 2.7V, Code = 80h
—
0.0015
0.0035
%/%
7-bit
VDD = 2.7V to 5.5V,
VA = 2.7V, Code = 40h
Power Requirements
Power Supply
Sensitivity
(MCP41X2 and
MCP42X2 only)
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at VW with VA = VDD and VB = VSS.
MCP4XX1 only.
MCP4XX2 only, includes VWZSE and VWFSE.
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
Note 1:
2:
3:
4:
5:
6:
7:
DS22059B-page 10
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
1.1
SPI Mode Timing Waveforms and Requirements
VIHH
VIH
CS
VIH
VIL
84
70
72
SCK
83
71
78
79
80
MSb
SDO
LSb
BIT6 - - - - - -1
77
75, 76
SDI
MSb IN
BIT6 - - - -1
LSb IN
74
73
FIGURE 1-1:
TABLE 1-1:
#
SPI Timing Waveform (Mode = 11).
SPI REQUIREMENTS (MODE = 11)
Characteristic
SCK Input Frequency
Symbol
Min
Max Units
FSCK
—
—
60
45
500
45
500
10
20
—
—
10
1
—
—
—
—
—
—
—
50
70
170
—
70
71
CS Active (VIL or VIHH) to SCK↑ input
SCK input high time
72
SCK input low time
73
74
77
80
Setup time of SDI input to SCK↑ edge
Hold time of SDI input from SCK↑ edge
CS Inactive (VIH) to SDO output hi-impedance
SDO data output valid after SCK↓ edge
TDIV2scH
TscH2DIL
TcsH2DOZ
TscL2DOV
83
CS Inactive (VIH) after SCK↑ edge
TscH2csI
Hold time of CS Inactive (VIH) to
CS Active (VIL or VIHH)
Note 1: This specification by design.
84
© 2008 Microchip Technology Inc.
TcsA2scH
TscH
TscL
TcsA2csI
100
1
50
—
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
Conditions
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
Note 1
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
DS22059B-page 11
MCP414X/416X/424X/426X
VIH
VIHH
VIH
82
CS
VIL
SCK
84
70
83
71
MSb
SDO
BIT6 - - - - - -1
LSb
75, 76
73
SDI
80
72
MSb IN
77
BIT6 - - - -1
LSb IN
74
FIGURE 1-2:
TABLE 1-2:
#
SPI Timing Waveform (Mode = 00).
SPI REQUIREMENTS (MODE = 00)
Characteristic
Symbol
Min
Max Units
FSCK
10
1
—
—
—
—
—
—
—
50
70
170
70
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—
ns
ms
ns
70
71
CS Active (VIL or VIHH) to SCK↑ input
SCK input high time
72
SCK input low time
73
74
77
80
Setup time of SDI input to SCK↑ edge
Hold time of SDI input from SCK↑ edge
CS Inactive (VIH) to SDO output hi-impedance
SDO data output valid after SCK↓ edge
TDIV2scH
TscH2DIL
TcsH2DOZ
TscL2DOV
—
—
60
45
500
45
500
10
20
—
—
82
SDO data output valid after
CS Active (VIL or VIHH)
CS Inactive (VIH) after SCK↓ edge
TssL2doV
—
TscH2csI
100
1
50
SCK Input Frequency
83
Hold time of CS Inactive (VIH) to
CS Active (VIL or VIHH)
Note 1: This specification by design.
84
DS22059B-page 12
TcsA2scH
TscH
TscL
TcsA2csI
—
Conditions
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
Note 1
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
VDD = 2.7V to 5.5V
VDD = 1.8V to 2.7V
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
TABLE 1-3:
SPI REQUIREMENTS FOR SDI/SDO MULTIPLEXED (READ OPERATION ONLY) (2)
Characteristic
Symbol
Min
Max Units
Conditions
—
250 kHz VDD= 2.7V to 5.5V
SCK Input Frequency
FSCK
TcsA2scH
60
—
ns
CS Active (VIL or VIHH) to SCK↑ input
SCK input high time
TscH
1.8
—
us
SCK input low time
TscL
1.8
—
ns
40
—
ns
Setup time of SDI input to SCK↑ edge
TDIV2scH
40
—
ns
Hold time of SDI input from SCK↑ edge
TscH2DIL
CS Inactive (VIH) to SDO output hi-impedance
TcsH2DOZ
—
50
ns Note 1
—
1.6
us
SDO data output valid after SCK↓ edge
TscL2DOV
TssL2doV
—
50
ns
SDO data output valid after
CS Active (VIL or VIHH)
TscH2csI
100
—
ns
CS Inactive (VIH) after SCK↓ edge
TcsA2csI
50
—
ns
Hold time of CS Inactive (VIH) to
CS Active (VII or VIHH)
Note 1: This specification by design
2: This table is for the devices where the SPI’s SDI and SDO pins are multiplexed (SDI/SDO) and a Read
command is issued. This is NOT required for SDI/SDO operation with the Increment, Decrement, or Write
commands. This data rate can be increased by having external pull-up resistors to increase the rising
edges of each bit.
© 2008 Microchip Technology Inc.
DS22059B-page 13
MCP414X/416X/424X/426X
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +5.5V, VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 8L-MSOP
θJA
—
211
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
89.3
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
149.5
—
°C/W
Thermal Resistance, 8L-DFN (3x3)
θJA
—
60
—
°C/W
Thermal Resistance, 10L-DFN (3x3)
θJA
—
57
—
°C/W
Thermal Resistance, 10L-MSOP
θJA
—
202
—
°C/W
Thermal Resistance, 14L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Thermal Resistance, 16L-QFN
θJA
—
43
—
°C/W
Conditions
Temperature Ranges
Thermal Package Resistances
DS22059B-page 14
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
200
ICS
150
100
50
RCS
0
2.00
4.00
6.00
8.00
fSCK (MHz)
10.00
12.00
FIGURE 2-1:
Device Current (IDD) vs. SPI
Frequency (fSCK) and Ambient Temperature
(VDD = 2.7V and 5.5V).
2
3
4
5
6
7
VCS (V)
8
9
10
FIGURE 2-4:
CS Pull-up/Pull-down
Resistance (RCS) and Current (ICS) vs. CS Input
Voltage (VCS) (VDD = 5.5V).
12
3.0
2.5
CS V PP Threshold (V)
Standby Current (Istby) (µA)
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
250
2.7V -40°C
2.7V 25°C
2.7V 85°C
2.7V 125°C
5.5V -40°C
5.5V 25°C
5.5V 85°C
5.5V 125°C
ICS (µA)
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0.00
RCS (kOhms)
Operating Current (I DD) (µA)
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
5.5V
2.0
1.5
1.0
2.7V
0.5
0.0
10
5.5V Entry
8
2.7V Entry
5.5V Exit
6
4
2.7V Exit
2
0
-40
25
85
125
Ambient Temperature (°C)
FIGURE 2-2:
Device Current (ISHDN) and
VDD. (CS = VDD) vs. Ambient Temperature.
-40
-20
0
20
40
60
80
Ambient Temperature (°C)
100
120
FIGURE 2-5:
CS High Input Entry/Exit
Threshold vs. Ambient Temperature and VDD.
EE Write Current (Iwrite) (µA)
900.0
800.0
700.0
600.0
5.5V
500.0
400.0
300.0
-40
25
85
125
Ambient Temperature (°C)
FIGURE 2-3:
Write Current (IWRITE) vs.
Ambient Temperature and VDD.
© 2008 Microchip Technology Inc.
DS22059B-page 15
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
0.2
0.1
80
0
60
-0.1
125°C
20
0
-40°C 25°C
85°C
-0.2
RW
-40C Rw
-40C INL
-40C DNL
260
25C Rw
25C INL
25C DNL
85C Rw
85C INL
85C DNL
125C Rw
125C INL
125C DNL
0.1
180
0
140
RW
60
-40°C
20
0
32
25°C
-0.1
-0.2
85°C
85°C 25°C
32
-40°C
-1.25
64 96 128 160 192 224 256
Wiper Setting (decimal)
-40C Rw
-40C INL
-40C DNL
25C Rw
25C INL
25C DNL
85C Rw
85C INL
85C DNL
INL
2
0
-40°C
60
125°C
20
0
32
85°C
25°C
DNL
-2
64 96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-10:
5 kΩ Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
AB)
5000
RWB (Ohms)
5100
4
100
5250
5150
4000
3000
2000
-40°C
25°C
85°C
125°C
1000
5.5V
5050
6
RW
6000
2.7V
125C Rw
125C INL
125C DNL
140
5300
5200
-0.75
RW
180
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-7:
5 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
Nominal Resistance (R
(Ohms)
40
260
125°C
0.75
-0.25
DNL
220
DNL
100
60
300
INL
220
1.25
FIGURE 2-9:
5 kΩ Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
0.3
0.2
125C Rw
125C INL
125C DNL
0.25
0
Error (LSb)
Wiper Resistance (RW)
(ohms)
300
85C Rw
85C INL
85C DNL
80
20
FIGURE 2-6:
5 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
25C Rw
25C INL
25C DNL
INL
125°C
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
32
-40C Rw
-40C INL
-40C DNL
100
INL
DNL
40
120
0.3
Error (LSb)
125C Rw
125C INL
125C DNL
Error (LSb)
85C Rw
85C INL
85C DNL
Wiper Resistance (RW)
(ohms)
100
25C Rw
25C INL
25C DNL
Wiper Resistance (RW)
(ohms)
-40C Rw
-40C INL
-40C DNL
Error (LSb)
Wiper Resistance (RW)
(ohms)
120
0
-40
0
40
80
Ambient Temperature (°C)
120
FIGURE 2-8:
5 kΩ – Nominal Resistance
(Ω) vs. Ambient Temperature and VDD.
DS22059B-page 16
0
32
64
96
128 160 192
Wiper Setting (decimal)
224
256
FIGURE 2-11:
5 kΩ – RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-12:
5 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-15:
5 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-13:
5 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-16:
5 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-14:
5 kΩ – Power-Up Wiper
Response Time (20 ms/Div).
© 2008 Microchip Technology Inc.
DS22059B-page 17
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
125C Rw
125C INL
125C DNL
INL
DNL
0.2
0.1
80
0
60
-0.1
25°C -40°C
125°C 85°C
-0.2
RW
20
-0.3
0
260
220
25C Rw
25C INL
25C DNL
85C Rw
85C INL
85C DNL
125C Rw
125C INL
125C DNL
INL
DNL
0.1
180
0
140
100
25°C
125°C 85°C
20
0
32
-0.2
-40°C
125°C
85°C 25°C
2
1
0
100
-40°C
60
DNL
RW
-1
-2
0
25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal)
FIGURE 2-21:
10 kΩ Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
RWB (Ohms)
8000
6000
4000
-40°C
25°C
85°C
125°C
2000
10000
3
INL
20
AB)
5.5V
4
125C Rw
125C INL
125C DNL
140
10000
10050
85C Rw
85C INL
85C DNL
180
10200
10100
25C Rw
25C INL
25C DNL
220
12000
2.7V
-0.5
DNL
-1
64 96 128 160 192 224 256
Wiper Setting (decimal)
-40C Rw
-40C INL
-40C DNL
260
10250
10150
32
RW
-40°C
125°C 85°C 25°C
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-18:
10 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
Nominal Resistance (R
(Ohms)
40
300
-0.1
RW
60
0
60
FIGURE 2-20:
10 kΩ Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
0.3
0.2
1
125C Rw
125C INL
125C DNL
80
0
Error (LSb)
Wiper Resistance (R W)
(ohms)
-40C Rw
-40C INL
-40C DNL
85C Rw
85C INL
85C DNL
0.5
20
FIGURE 2-17:
10 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
25C Rw
25C INL
25C DNL
INL
25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal)
300
-40C Rw
-40C INL
-40C DNL
100
Wiper Resistance (R W)
(ohms)
40
120
0.3
Error (LSb)
85C Rw
85C INL
85C DNL
Error (LSb)
100
25C Rw
25C INL
25C DNL
Wiper Resistance (R W)
(ohms)
-40C Rw
-40C INL
-40C DNL
Error (LSb)
Wiper Resistance (R W)
(ohms)
120
0
-40
0
40
80
Ambient Temperature (°C)
120
FIGURE 2-19:
10 kΩ – Nominal Resistance
(Ω) vs. Ambient Temperature and VDD.
DS22059B-page 18
0
32
64
96 128 160 192
Wiper Setting (decimal)
224
256
FIGURE 2-22:
10 kΩ – RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-23:
10 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-25:
10 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-24:
10 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-26:
10 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
© 2008 Microchip Technology Inc.
DS22059B-page 19
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
INL
DNL
0.2
0.1
80
0
60
-0.1
40
125°C
25°C
85°C
20
0
-40°C
120
0.3
100
-0.2
RW
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
32
260
220
25C Rw
25C INL
25C DNL
85C Rw
85C INL
85C DNL
125C Rw
125C INL
125C DNL
INL
DNL
180
0
140
RW
100
-40°C
60
0
32
-40C Rw
-40C INL
-40C DNL
125C Rw
125C INL
125C DNL
49400
0.75
0.25
-0.25
-0.5
-40°C
60
85°C 25°C
0
32
64
-0.75
-1
96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-31:
50 kΩ Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
40000
30000
20000
-40°C
25°C
85°C
125°C
10000
49600
1
0.5
RW
20
RWB (Ohms)
5.5V
85C Rw
85C INL
85C DNL
DNL
100
50000
49800
25C Rw
25C INL
25C DNL
0
50600
50000
-0.2
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
32
140
60000
2.7V
RW
INL
50800
50200
85°C 25°C
125°C
125°C
50400
-40°C
180
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-28:
50 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
AB)
-0.1
40
125°C 85°C 25°C
20
Nominal Resistance (R
(Ohms)
0
260
-0.2
0.1
60
300
-0.1
0.2
DNL
220
0.1
0.3
125C Rw
125C INL
125C DNL
FIGURE 2-30:
50 kΩ Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
0.3
0.2
85C Rw
85C INL
85C DNL
80
0
Error (LSb)
Wiper Resistance (R W)
(ohms)
-40C Rw
-40C INL
-40C DNL
25C Rw
25C INL
25C DNL
INL
20
FIGURE 2-27:
50 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
300
-40C Rw
-40C INL
-40C DNL
Error (LSb)
125C Rw
125C INL
125C DNL
Error (LSb)
85C Rw
85C INL
85C DNL
Wiper Resistance (R W)
(ohms)
100
25C Rw
25C INL
25C DNL
Wiper Resistance (R W)
(ohms)
-40C Rw
-40C INL
-40C DNL
Error (LSb)
Wiper Resistance (R W)
(ohms)
120
0
-40
0
40
80
Ambient Temperature (°C)
120
FIGURE 2-29:
50 kΩ – Nominal Resistance
(Ω) vs. Ambient Temperature and VDD.
DS22059B-page 20
0
32
64
96 128 160 192
Wiper Setting (decimal)
224
256
FIGURE 2-32:
50 kΩ – RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-33:
50 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-35:
50 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-34:
50 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-36:
50 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
© 2008 Microchip Technology Inc.
DS22059B-page 21
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
125C Rw
125C INL
125C DNL
0.2
120
100
0.1
INL
DNL
80
0
60
-0.1
40
25°C -40°C
-40C Rw
-40C INL
-40C DNL
RW
-0.2
64 96 128 160 192 224 256
Wiper Setting (decimal)
32
-40C Rw
-40C INL
-40C DNL
260
25C Rw
25C INL
25C DNL
85C Rw
85C INL
85C DNL
125C Rw
125C INL
125C DNL
INL
-0.1
40
-40°C
220
DNL
260
0
140
-0.05
100
RW
60
-40°C
-0.15
125°C 85°C 25°C
20
0
32
-0.1
-0.2
64 96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-38:
100 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
125C Rw
125C INL
125C DNL
0
RW
100
60
-40°C
-0.2
-0.4
125°C 85°C 25°C
0
32
-0.6
64 96 128 160 192 224 256
Wiper Setting (decimal)
FIGURE 2-41:
100 kΩ Rheo Mode – RW
(Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
Rwb (Ohms)
80000
60000
40000
-40°C
25°C
85°C
125°C
5.5V
20000
99000
0.4
140
100000
99500
0.6
0.2
DNL
20
AB)
Nominal Resistance (R
(Ohms)
85C Rw
85C INL
85C DNL
180
101000
100000
25C Rw
25C INL
25C DNL
INL
220
120000
2.7V
-0.3
64 96 128 160 192 224 256
Wiper Setting (decimal)
32
-40C Rw
-40C INL
-40C DNL
101500
100500
-0.2
FIGURE 2-40:
100 kΩ Rheo Mode – RW
(Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
0.15
0.05
180
RW
125°C 85°C 25°C
300
0.1
0.1
0
0.2
Error (LSb)
Wiper Resistance (R W)
(ohms)
300
0.2
60
0
FIGURE 2-37:
100 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
0.3
125C Rw
125C INL
125C DNL
DNL
80
20
Wiper Resistance (Rw)
(ohms)
0
85C Rw
85C INL
85C DNL
INL
125°C 85°C
20
25C Rw
25C INL
25C DNL
Error (LSb)
85C Rw
85C INL
85C DNL
Error (LSb)
100
25C Rw
25C INL
25C DNL
Wiper Resistance (R W)
(ohms)
-40C Rw
-40C INL
-40C DNL
Error (LSb)
Wiper Resistance (R W)
(ohms)
120
0
-40
0
40
80
Ambient Temperature (°C)
120
FIGURE 2-39:
100 kΩ – Nominal
Resistance (Ω) vs. Ambient Temperature and
VDD .
DS22059B-page 22
0
32
64
96 128 160 192
Wiper Setting (decimal)
224
256
FIGURE 2-42:
100 kΩ – RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-43:
100 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-45:
100 kΩ – Power-Up Wiper
Response Time (1 µs/Div).
FIGURE 2-44:
100 kΩ – Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-46:
100 kΩ – Low-Voltage
Increment Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
© 2008 Microchip Technology Inc.
DS22059B-page 23
MCP414X/416X/424X/426X
0.12
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.1
0.08
5.5V
%
%
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
0.06
0.04
3.0V
0.02
3.0V
0
-40
0
40
80
Temperature (°C)
120
FIGURE 2-47:
Resistor Network 0 to
Resistor Network 1 RAB (5 kΩ) Mismatch vs. VDD
and Temperature.
-40
0.04
0.05
0.03
0.04
40
80
Temperature (°C)
0.03
5.5V
0.01
0
120
FIGURE 2-49:
Resistor Network 0 to
Resistor Network 1 RAB (50 kΩ) Mismatch vs.
VDD and Temperature.
0.02
5.5V
0.02
0
%
%
5.5V
-0.01
3.0V
0
3.0V
-0.02
0.01
-0.01
-0.03
-0.02
-0.04
-0.03
-40
0
40
80
Temperature (°C)
120
FIGURE 2-48:
Resistor Network 0 to
Resistor Network 1 RAB (10 kΩ) Mismatch vs.
VDD and Temperature.
DS22059B-page 24
-40
10
60
Temperature (°C)
110
FIGURE 2-50:
Resistor Network 0 to
Resistor Network 1 RAB (100 kΩ) Mismatch vs.
VDD and Temperature.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
2.4
0
2.2
-5
IOH (mA)
VIH (V)
-10
5.5V
2
1.8
1.6
1.4
2.7V
2.7V
-15
-20
5.5V
-25
-30
-35
1.2
-40
1
-45
-40
0
40
80
120
-40
0
Temperature (°C)
FIGURE 2-51:
VIH (SDI, SCK, CS, WP, and
SHDN) vs. VDD and Temperature.
1.3
5.5V
IOL (mA)
VIL (V)
1.1
1
0.9
0.8
2.7V
0.7
0.6
-40
0
40
80
120
50
45
40
35
30
25
20
15
10
5
0
120
5.5V
2.7V
-40
Temperature (°C)
FIGURE 2-52:
VIL (SDI, SCK, CS, WP, and
SHDN) vs. VDD and Temperature.
© 2008 Microchip Technology Inc.
80
IOH (SDO) vs. VDD and
FIGURE 2-53:
Temperature.
1.4
1.2
40
Temperature (°C)
0
40
80
120
Temperature (°C)
FIGURE 2-54:
Temperature.
IOL (SDO) vs. VDD and
DS22059B-page 25
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C,
VDD = 5V, VSS = 0V.
2.1
Test Circuits
4.2
+5V
tWC (ms)
4.0
VIN
3.8
3.6
Offset
GND
3.4
3.2
A
W
B
+
VOUT
-
2.5V DC
3.0
-40
0
40
80
120
Temperature (°C)
FIGURE 2-55:
Nominal EEPROM Write
Cycle Time vs. VDD and Temperature.
FIGURE 2-58:
Test.
-3 db Gain vs. Frequency
1.2
1
5.5V
VDD (V)
0.8
0.6
2.7V
0.4
0.2
0
-40
0
40
80
120
Temperature (°C)
FIGURE 2-56:
and Temperature.
POR/BOR Trip point vs. VDD
15.0
14.5
fsck (MHz)
5.5V
14.0
2.7V
13.5
13.0
12.5
12.0
-40
0
40
80
120
Temperature (°C)
FIGURE 2-57:
SCK Input Frequency vs.
Voltage and Temperature.
DS22059B-page 26
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
Additional descriptions of the device pins follows.
TABLE 3-1:
PINOUT DESCRIPTION FOR THE MCP414X/416X/424X/426X
Pin
Single
Symbol
I/O
Buffer
Type
Weak
Pull-up/
down
(Note 2)
Dual
Rheo Pot (1) Rheo
Pot
Standard Function
8L
8L
10L
14L
16L
1
1
1
1
16
CS
I
HV w/ST
“smart”
SPI Chip Select Input
2
2
2
2
1
SCK
I
HV w/ST
“smart”
SPI Clock Input
3
—
3
3
2
SDI
I
HV w/ST
“smart”
SPI Serial Data Input
—
3
—
—
—
SDI/SDO
I/O
HV w/ST
“smart”
SPI Serial Data Input/Output
(Note 1, Note 3)
4
4
4
4
3, 4
VSS
—
P
—
Ground
—
—
5
5
5
P1B
A
Analog
No
Potentiometer 1 Terminal B
—
—
6
6
6
P1W
A
Analog
No
Potentiometer 1 Wiper Terminal
—
—
—
7
7
P1A
A
Analog
No
Potentiometer 1 Terminal A
—
5
—
8
8
P0A
A
Analog
No
Potentiometer 0 Terminal A
5
6
7
9
9
P0W
A
Analog
No
Potentiometer 0 Wiper Terminal
6
7
8
10
10
P0B
A
Analog
No
Potentiometer 0 Terminal B
—
—
—
11
12
WP
I
I
“smart”
Hardware
Protect
—
—
—
12
13
SHDN
I
HV w/ST
“smart”
Hardware Shutdown
7
—
9
13
14
SDO
O
O
No
SPI Serial Data Out
8
8
10
14
15
VDD
—
P
—
Positive Power Supply Input
—
—
—
—
11
NC
—
—
—
No Connection
9
9
11
—
17
EP
—
—
—
Exposed Pad. (Note 4)
Legend:
Note 1:
2:
3:
4:
EEPROM
Write
HV w/ST = High Voltage tolerant input (with Schmidtt trigger input)
A = Analog pins (Potentiometer terminals)
I = digital input (high Z)
O = digital output
I/O = Input / Output
P = Power
The 8-lead Single Potentiometer devices are pin limited so the SDO pin is multiplexed with the SDI pin
(SDI/SDO pin). After the Address/Command (first 6-bits) are received, If a valid Read command has been
requested, the SDO pin starts driving the requested read data onto the SDI/SDO pin.
The pin’s “smart” pull-up shuts off while the pin is forced low. This is done to reduce the standby and shutdown current.
The SDO is an open drain output, which uses the internal “smart” pull-up. The SDI input data rate can be
at the maximum SPI frequency. the SDO output data rate will be limited by the “speed” of the pull-up,
customers can increase the rate with external pull-up resistors.
The DFN and QFN packages have a contact on the bottom of the package. This contact is conductively
connected to the die substrate, and therefore should be unconnected or connected to the same ground as
the device’s VSS pin.
© 2008 Microchip Technology Inc.
DS22059B-page 27
MCP414X/416X/424X/426X
3.1
Chip Select (CS)
The CS pin is the serial interface’s chip select input.
Forcing the CS pin to VIL enables the serial commands.
Forcing the CS pin to VIHH enables the high-voltage
serial commands.
3.2
Serial Data In (SDI)
The SDI pin is the serial interfaces Serial Data In pin.
This pin is connected to the Host Controllers SDO pin.
3.3
Serial Data In / Serial Data Out
(SDI/SDO)
On the MCP41X1 devices, pin-out limitations do not
allow for individual SDI and SDO pins. On these
devices, the SDI and SDO pins are multiplexed.
The MCP41X1 serial interface knows when the pin
needs to change from being an input (SDI) to being an
output (SDO). The Host Controller’s SDO pin must be
properly protected from a drive conflict.
3.4
Ground (VSS)
The VSS pin is the device ground reference.
3.5
Potentiometer Terminal B
The terminal B pin is connected to the internal potentiometer’s terminal B.
The potentiometer’s terminal B is the fixed connection
to the Zero Scale wiper value of the digital potentiometer. This corresponds to a wiper value of 0x00 for both
7-bit and 8-bit devices.
The terminal B pin does not have a polarity relative to
the terminal W or A pins. The terminal B pin can
support both positive and negative current. The voltage
on terminal B must be between VSS and VDD.
MCP42XX devices have two terminal B pins, one for
each resistor network.
3.6
Potentiometer Wiper (W) Terminal
The terminal W pin is connected to the internal potentiometer’s terminal W (the wiper). The wiper terminal is
the adjustable terminal of the digital potentiometer. The
terminal W pin does not have a polarity relative to
terminals A or B pins. The terminal W pin can support
both positive and negative current. The voltage on
terminal W must be between VSS and VDD.
MCP42XX devices have two terminal W pins, one for
each resistor network.
DS22059B-page 28
3.7
Potentiometer Terminal A
The terminal A pin is available on the MCP4XX1
devices, and is connected to the internal potentiometer’s terminal A.
The potentiometer’s terminal A is the fixed connection
to the Full Scale wiper value of the digital
potentiometer. This corresponds to a wiper value of
0x100 for 8-bit devices or 0x80 for 7-bit devices.
The terminal A pin does not have a polarity relative to
the terminal W or B pins. The terminal A pin can
support both positive and negative current. The voltage
on terminal A must be between VSS and VDD.
The terminal A pin is not available on the MCP4XX2
devices, and the internally terminal A signal is floating.
MCP42X1 devices have two terminal A pins, one for
each resistor network.
3.8
Write Protect (WP)
The WP pin is used to force the non-volatile memory to
be write protected.
3.9
Shutdown (SHDN)
The SHDN pin is used to force the resistor network
terminals into the hardware shutdown state.
3.10
Serial Data Out (SDO)
The SDO pin is the serial interfaces Serial Data Out pin.
This pin is connected to the Host Controllers SDI pin.
This pin allows the Host Controller to read the digital
potentiometers registers, or monitor the state of the
command error bit.
3.11
Positive Power Supply Input (VDD)
The VDD pin is the device’s positive power supply input.
The input power supply is relative to VSS.
While the device VDD < Vmin (2.7V), the electrical
performance of the device may not meet the data sheet
specifications.
3.12
No Connection (NC)
Those pins should be either connected to VDD or VSS.
3.13
Exposed Pad (EP)
This pad is conductively connected to the device's
substrate. This pad should be tied to the same potential
as the VSS pin (or left unconnected). This pad could be
used to assist as a heat sink for the device when
connected to a PCB heat sink.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
4.0
FUNCTIONAL OVERVIEW
This Data Sheet covers a family of thirty-two Digital
Potentiometer and Rheostat devices that will be
referred to as MCP4XXX. The MCP4XX1 devices are
the Potentiometer configuration, while the MCP4XX2
devices are the Rheostat configuration.
As the Device Block Diagram shows, there are four
main functional blocks. These are:
•
•
•
•
POR/BOR Operation
Memory Map
Resistor Network
Serial Interface (SPI)
The POR/BOR operation and the Memory Map are
discussed in this section and the Resistor Network and
SPI operation are described in their own sections. The
Device Commands commands are discussed in
Section 7.0.
4.1
POR/BOR Operation
The Power-on Reset is the case where the device is
having power applied to it from VSS. The Brown-out
Reset occurs when a device had power applied to it,
and that power (voltage) drops below the specified
range.
The devices RAM retention voltage (VRAM) is lower
than the POR/BOR voltage trip point (VPOR/VBOR). The
maximum VPOR/VBOR voltage is less then 1.8V.
When VPOR/VBOR < VDD < 2.7V, the electrical
performance may not meet the data sheet
specifications. In this region, the device is capable of
reading and writing to its EEPROM and incrementing,
decrementing, reading and writing to its volatile
memory if the proper serial command is executed.
4.1.1
POWER-ON RESET
When the device powers up, the device VDD will cross
the VPOR/VBOR voltage. Once the VDD voltage crosses
the VPOR/VBOR voltage the following happens:
• Volatile wiper register is loaded with value in the
corresponding non-volatile wiper register
• The TCON register is loaded it’s default value
• The device is capable of digital operation
© 2008 Microchip Technology Inc.
4.1.2
BROWN-OUT RESET
When the device powers down, the device VDD will
cross the VPOR/VBOR voltage.
Once the VDD voltage decreases below the VPOR/VBOR
voltage the following happens:
• Serial Interface is disabled
• EEPROM Writes are disabled
If the VDD voltage decreases below the VRAM voltage
the following happens:
• Volatile wiper registers may become corrupted
• TCON register may become corrupted
As the voltage recovers above the VPOR/VBOR voltage
see Section 4.1.1 “Power-on Reset”.
Serial commands not completed due to a brown-out
condition may cause the memory location (volatile and
non-volatile) to become corrupted.
4.2
Memory Map
The device memory is 16 locations that are 9-bits wide
(16x9 bits). This memory space contains both volatile
and non-volatile locations (see Table 4-1).
TABLE 4-1:
Address
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
MEMORY MAP
Function
Volatile Wiper 0
Volatile Wiper 1
Non-Volatile Wiper 0
Non-Volatile Wiper 1
Volatile TCON Register
Status Register
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Data EEPROM
Memory Type
RAM
RAM
EEPROM
EEPROM
RAM
RAM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
EEPROM
DS22059B-page 29
MCP414X/416X/424X/426X
4.2.1
NON-VOLATILE MEMORY
(EEPROM)
4.2.1.4
This memory can be grouped into two uses of
non-volatile memory. These are:
• General Purpose Registers
• Non-Volatile Wiper Registers
The non-volatile wipers starts functioning below the
devices VPOR/VBOR trip point.
4.2.1.1
General Purpose Registers
These locations allow the user to store up to 10 (9-bit)
locations worth of information.
4.2.1.2
Non-Volatile Wiper Registers
Special Features
There are 3 non-volatile bits that are not directly
mapped into the address space. These bits control the
following functions:
• EEPROM Write Protect
• WiperLock Technology for Non-Volatile Wiper 0
• WiperLock Technology for Non-Volatile Wiper 1
The operation of WiperLock Technology is discussed in
Section 5.3. The state of the WL0, WL1, and WP bits
is reflected in the STATUS register (see Register 4-1).
EEPROM Write Protect
All internal EEPROM memory can be Write Protected.
When EEPROM memory is Write Protected, Write
commands to the internal EEPROM are prevented.
These locations contain the wiper values that are
loaded into the corresponding volatile wiper register
whenever the device has a POR/BOR event. There are
up to two registers, one for each resistor network.
Write Protect (WP) can be enabled/disabled by two
methods. These are:
The non-volatile wiper register enables stand-alone
operation of the device (without Microcontroller control)
after being programmed to the desired value.
• External WP Hardware pin (MCP42X1 devices
only)
• Non-Volatile configuration bit
4.2.1.3
High Voltage commands are required to enable and
disable the nonvolatile WP bit. These commands are
shown in Section 7.9 “Modify Write Protect or WiperLock Technology (High Voltage)”.
Factory Initialization of Non-Volatile
Memory (EEPROM)
The Non-Volatile Wiper values will be initialized to
mid-scale value. This is shown in Table 4-2.
The General purpose EEPROM memory will be
programmed to a default value of 0xFF.
It is good practice in the manufacturing flow to
configure the device to your desired settings.
-502
5.0 kΩ
Mid-scale
80h
40h
Disabled
-103
10.0 kΩ
Mid-scale
80h
40h
Disabled
-503
50.0 kΩ
Mid-scale
80h
40h
Disabled
-104
100.0 kΩ Mid-scale
80h
40h
Disabled
Resistance
Code
Default POR
Wiper Setting
Wiper
Code
WiperLock™
Technology and
Write Protect Setting
DEFAULT FACTORY
SETTINGS SELECTION
Typical
RAB Value
TABLE 4-2:
DS22059B-page 30
8-bit 7-bit
To write to EEPROM, both the external WP pin and the
internal WP EEPROM bit must be disabled. Write
Protect does not block commands to the volatile
registers.
4.2.2
VOLATILE MEMORY (RAM)
There are four Volatile Memory locations. These are:
• Volatile Wiper 0
• Volatile Wiper 1
(Dual Resistor Network devices only)
• Status Register
• Terminal Control (TCON) Register
The volatile memory starts functioning at the RAM
retention voltage (VRAM).
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
4.2.2.1
Status (STATUS) Register
STATUS register can be accessed via the READ
commands. Register 4-1 describes each STATUS
register bit.
This register contains 5 status bits. These bits show the
state of the WiperLock bits, the Shutdown bit the Write
Protect bit, and if an EEPROM write cycle is active. The
REGISTER 4-1:
R-1
The STATUS register is placed at Address 05h.
STATUS REGISTER
R-1
R-1
R-1
D8:D5
R-0
EEWA
R-x
WL1 (1)
R-x
WL0
(1)
R-x
R-x
SHDN
WP (1)
bit 7
bit 0
Legend:
R = Readable bit
W = Writable bit
U = Unimplemented bit, read as ‘0’
-n = Value at POR
‘1’ = Bit is set
‘0’ = Bit is cleared
x = Bit is unknown
bit 8-5
D8:D5: Reserved. Forced to “1”
bit 4
EEWA: EEPROM Write Active Status bit
This bit indicates if the EEPROM Write Cycle is occurring.
1 = An EEPROM Write cycle is currently occurring. Only serial commands to the Volatile memory
locations are allowed (addresses 00h, 01h, 04h, and 05h)
0 = An EEPROM Write cycle is NOT currently occurring
bit 3
WL1: WiperLock Status bit for Resistor Network 1 (Refer to Section 5.3 “WiperLock™ Technology”
for further information)
WiperLock (WL) prevents the Volatile and Non-Volatile Wiper 1 addresses and the TCON register bits
R1HW, R1A, R1W, and R1B from being written to. High Voltage commands are required to enable and
disable WiperLock Technology.
1 = Wiper and TCON register bits R1HW, R1A, R1W, and R1B of Resistor Network 1 (Pot 1) are
“Locked” (Write Protected)
0 = Wiper and TCON of Resistor Network 1 (Pot 1) can be modified
Note:
bit 2
WL0: WiperLock Status bit for Resistor Network 0 (Refer to Section 5.3 “WiperLock™ Technology”
for further information)
The WiperLock Technology bits (WLx) prevents the Volatile and Non-Volatile Wiper 0 addresses and the
TCON register bits R0HW, R0A, R0W, and R0B from being written to. High Voltage commands are
required to enable and disable WiperLock Technology.
1 = Wiper and TCON register bits R0HW, R0A, R0W, and R0B of Resistor Network 0 (Pot 0) are
“Locked” (Write Protected)
0 = Wiper and TCON of Resistor Network 0 (Pot 0) can be modified
Note:
bit 1
Note 1:
The WL1 bit always reflects the result of the last programming cycle to the non-volatile WL1
bit. After a POR or BOR event, the WL1 bit is loaded with the non-volatile WL1 bit value.
The WL0 bit always reflects the result of the last programming cycle to the non-volatile WL0
bit. After a POR or BOR event, the WL0 bit is loaded with the non-volatile WL0 bit value.
SHDN: Hardware Shutdown pin Status bit (Refer to Section 5.4 “Shutdown” for further information)
This bit indicates if the Hardware shutdown pin (SHDN) is low. A hardware shutdown disconnects the
Terminal A and forces the wiper (Terminal W) to Terminal B (see Figure 5-2). While the device is in
Hardware Shutdown (the SHDN pin is low) the serial interface is operational so the STATUS register
may be read.
1 = MCP4XXX is in the Hardware Shutdown state
0 = MCP4XXX is NOT in the Hardware Shutdown state
Requires a High Voltage command to modify the state of this bit (for Non-Volatile devices only). This bit is
Not directly written, but reflects the system state (for this feature).
© 2008 Microchip Technology Inc.
DS22059B-page 31
MCP414X/416X/424X/426X
REGISTER 4-1:
bit 0
Note 1:
STATUS REGISTER (CONTINUED)
WP: EEPROM Write Protect Status bit (Refer to Section “EEPROM Write Protect” for further
information)
This bit indicates the status of the write protection on the EEPROM memory. When Write Protect is
enabled, writes to all non-volatile memory are prevented. This includes the General Purpose EEPROM
memory, and the non-volatile Wiper registers. Write Protect does not block modification of the volatile
wiper register values or the volatile TCON register value (via Increment, Decrement, or Write
commands).
This status bit is an OR of the devices Write Protect pin (WP) and the internal non-volatile WP bit. High
Voltage commands are required to enable and disable the internal WP EEPROM bit.
1 = EEPROM memory is Write Protected
0 = EEPROM memory can be written
Requires a High Voltage command to modify the state of this bit (for Non-Volatile devices only). This bit is
Not directly written, but reflects the system state (for this feature).
DS22059B-page 32
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
4.2.2.2
Terminal Control (TCON) Register
This register contains 8 control bits. Four bits are for
Wiper 0, and four bits are for Wiper 1. Register 4-2
describes each bit of the TCON register.
The state of each resistor network terminal connection
is individually controlled. That is, each terminal
connection (A, B and W) can be individually connected/
disconnected from the resistor network. This allows the
system to minimize the currents through the digital
potentiometer.
© 2008 Microchip Technology Inc.
The value that is written to this register will appear on
the resistor network terminals when the serial
command has completed.
When the WL1 bit is enabled, writes to the TCON
register bits R1HW, R1A, R1W, and R1B are inhibited.
When the WL0 bit is enabled, writes to the TCON
register bits R0HW, R0A, R0W, and R0B are inhibited.
On a POR/BOR this register is loaded with
1FFh (9-bits), for all terminals connected. The
HostController needs to detect the POR/BOR event
and then update the Volatile TCON register value.
DS22059B-page 33
MCP414X/416X/424X/426X
REGISTER 4-2:
TCON BITS (1, 2)
R-1
R/W-1
R/W-1
R/W-1
R/W-1
R/W-1
R/W-1
R/W-1
R/W-1
D8
R1HW
R1A
R1W
R1B
R0HW
R0A
R0W
R0B
bit 8
bit 0
Legend:
R = Readable bit
W = Writable bit
U = Unimplemented bit, read as ‘0’
-n = Value at POR
‘1’ = Bit is set
‘0’ = Bit is cleared
x = Bit is unknown
bit 8
D8: Reserved. Forced to “1”
bit 7
R1HW: Resistor 1 Hardware Configuration Control bit
This bit forces Resistor 1 into the “shutdown” configuration of the Hardware pin
1 = Resistor 1 is NOT forced to the hardware pin “shutdown” configuration
0 = Resistor 1 is forced to the hardware pin “shutdown” configuration
bit 6
R1A: Resistor 1 Terminal A (P1A pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Terminal A to the Resistor 1 Network
1 = P1A pin is connected to the Resistor 1 Network
0 = P1A pin is disconnected from the Resistor 1 Network
bit 5
R1W: Resistor 1 Wiper (P1W pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Wiper to the Resistor 1 Network
1 = P1W pin is connected to the Resistor 1 Network
0 = P1W pin is disconnected from the Resistor 1 Network
bit 4
R1B: Resistor 1 Terminal B (P1B pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Terminal B to the Resistor 1 Network
1 = P1B pin is connected to the Resistor 1 Network
0 = P1B pin is disconnected from the Resistor 1 Network
bit 3
R0HW: Resistor 0 Hardware Configuration Control bit
This bit forces Resistor 0 into the “shutdown” configuration of the Hardware pin
1 = Resistor 0 is NOT forced to the hardware pin “shutdown” configuration
0 = Resistor 0 is forced to the hardware pin “shutdown” configuration
bit 2
R0A: Resistor 0 Terminal A (P0A pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Terminal A to the Resistor 0 Network
1 = P0A pin is connected to the Resistor 0 Network
0 = P0A pin is disconnected from the Resistor 0 Network
bit 1
R0W: Resistor 0 Wiper (P0W pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Wiper to the Resistor 0 Network
1 = P0W pin is connected to the Resistor 0 Network
0 = P0W pin is disconnected from the Resistor 0 Network
bit 0
R0B: Resistor 0 Terminal B (P0B pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Terminal B to the Resistor 0 Network
1 = P0B pin is connected to the Resistor 0 Network
0 = P0B pin is disconnected from the Resistor 0 Network
Note 1:
2:
The hardware SHDN pin (when active) overrides the state of these bits. When the SHDN pin returns to the
inactive state, the TCON register will control the state of the terminals. The SHDN pin does not modify the
state of the TCON bits.
These bits do not affect the wiper register values.
DS22059B-page 34
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
5.0
RESISTOR NETWORK
5.1
The Resistor Network has either 7-bit or 8-bit
resolution. Each Resistor Network allows zero scale to
full scale connections. Figure 5-1 shows a block
diagram for the resistive network of a device.
The Resistor Network is made up of several parts.
These include:
• Resistor Ladder
• Wiper
• Shutdown (Terminal Connections)
Devices have either one or two resistor networks,
These are referred to as Pot 0 and Pot 1.
A
RW
RS
RW
R
RAB S
The resistor ladder is a series of equal value resistors
(RS) with a connection point (tap) between the two
resistors. The total number of resistors in the series
(ladder) determines the RAB resistance (see
Figure 5-1). The end points of the resistor ladder are
connected to analog switches which are connected to
the device Terminal A and Terminal B pins. The RAB
(and RS) resistance has small variations over voltage
and temperature.
For an 8-bit device, there are 256 resistors in a string
between terminal A and terminal B. The wiper can be
set to tap onto any of these 256 resistors thus providing
257 possible settings (including terminal A and terminal
B).
8-Bit
N=
257
(1) (100h)
7-Bit
N=
128
(80h)
For a 7-bit device, there are 128 resistors in a string
between terminal A and terminal B. The wiper can be
set to tap onto any of these 128 resistors thus providing
129 possible settings (including terminal A and terminal
B).
256
(FFh)
127
(7Fh)
Equation 5-1 shows the calculation for the step
resistance.
255
(FEh)
126
(7Eh)
EQUATION 5-1:
RW (1)
RS
Resistor Ladder Module
(1)
RS CALCULATION
R AB
R S = ------------( 256 )
8-bit Device
R AB
R S = ------------( 128 )
7-bit Device
W
RW
RS
RW
1
(1) (01h)
1
(01h)
0
(00h)
0
(00h)
(1)
Analog Mux
B
Note 1:
The wiper resistance is dependent on
several factors including, wiper code,
device VDD, Terminal voltages (on A, B,
and W), and temperature.
Also for the same conditions, each tap
selection resistance has a small variation.
This RW variation has greater effects on
some specifications (such as INL) for the
smaller resistance devices (5.0 kΩ)
compared to larger resistance devices
(100.0 kΩ).
FIGURE 5-1:
Resistor Block Diagram.
© 2008 Microchip Technology Inc.
DS22059B-page 35
MCP414X/416X/424X/426X
5.2
Wiper
5.3
Each tap point (between the RS resistors) is a
connection point for an analog switch. The opposite
side of the analog switch is connected to a common
signal which is connected to the Terminal W (Wiper)
pin.
A value in the volatile wiper register selects which
analog switch to close, connecting the W terminal to
the selected node of the resistor ladder.
The wiper can connect directly to Terminal B or to
Terminal A. A zero-scale connections, connects the
Terminal W (wiper) to Terminal B (wiper setting of
000h). A full-scale connections, connects the Terminal
W (wiper) to Terminal A (wiper setting of 100h or 80h).
In these configurations the only resistance between the
Terminal W and the other Terminal (A or B) is that of the
analog switches.
A wiper setting value greater than full scale (wiper
setting of 100h for 8-bit device or 80h for 7-bit devices)
will also be a Full Scale setting (Terminal W (wiper)
connected to Terminal A). Table 5-1 illustrates the full
wiper setting map.
Equation 5-2 illustrates the calculation used to determine the resistance between the wiper and terminal B.
The MCP4XXX device’s WiperLock technology allows
application-specific calibration settings to be secured in
the EEPROM without requiring the use of an additional
write-protect pin. There are two WiperLock Technology
configuration bits (WL0 and WL1). These bits prevent
the Non-Volatile and Volatile addresses and bits for the
specified resistor network from being written.
The WiperLock technology prevents
commands from doing the following:
RWB CALCULATION
R AB N
R WB = ------------- + RW
( 256 )
8-bit Device
N = 0 to 256 (decimal)
R AB N
- + RW
R WB = ------------( 128 )
7-bit Device
the
serial
• Changing a volatile wiper value
• Writing to a non-volatile wiper memory location
• Changing the volatile TCON register value
For either Resistor Network 0 or Resistor Network 1
(Potx), the WLx bit controls the following:
• Non-Volatile Wiper Register
• Volatile Wiper Register
• Volatile TCON register bits RxHW, RxA, RxW, and
RxB
High Voltage commands are required to enable and
disable WiperLock. Please refer to the Modify Write
Protect or WiperLock Technology (High Voltage)
command for operation.
5.3.1
EQUATION 5-2:
WiperLock™ Technology
POR/BOR OPERATION WHEN
WIPERLOCK TECHNOLOGY
ENABLED
The WiperLock Technology state is not affected by a
POR/BOR event. A POR/BOR event will load the
Volatile Wiper register value with the Non-Volatile
Wiper register value, refer to Section 4.1.
N = 0 to 128 (decimal)
TABLE 5-1:
VOLATILE WIPER VALUE VS.
WIPER POSITION MAP
Wiper Setting
Properties
7-bit Pot 8-bit Pot
3FFh
081h
3FFh
101h
080h
100h
07Fh
041h
040h
03Fh
001h
000h
0FFh
081
080h
07Fh
001
000h
DS22059B-page 36
Reserved (Full Scale (W = A)),
Increment and Decrement
commands ignored
Full Scale (W = A),
Increment commands ignored
W=N
W = N (Mid-Scale)
W=N
Zero Scale (W = B)
Decrement command ignored
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
5.4
5.4.2
Shutdown
Shutdown is used to minimize the device’s current
consumption. The MCP4XXX has two methods to
achieve this. These are:
• Hardware Shutdown Pin (SHDN)
• Terminal Control Register (TCON)
The Hardware Shutdown pin is backwards compatible
with the MCP42XXX devices.
5.4.1
HARDWARE SHUTDOWN PIN
(SHDN)
The SHDN pin is available on the dual potentiometer
devices. When the SHDN pin is forced active (VIL):
The Terminal Control (TCON) register is a volatile
register used to configure the connection of each
resistor network terminal pin (A, B, and W) to the
Resistor Network. This register is shown in
Register 4-2.
The RxHW bits forces the selected resistor network
into the same state as the SHDN pin. Alternate low
power configurations may be achieved with the RxA,
RxW, and RxB bits.
Note:
• The P0A and P1A terminals are disconnected
• The P0W and P1W terminals are simultaneously
connect to the P0B and P1B terminals,
respectively (see Figure 5-2)
• The Serial Interface is NOT disabled, and all
Serial Interface activity is executed
• Any EEPROM write cycles are completed
The Hardware Shutdown pin mode does NOT corrupt
the values in the Volatile Wiper Registers nor the
TCON register. When the Shutdown mode is exited
(SHDN pin is inactive (VIH)):
• The device returns to the Wiper setting specified
by the Volatile Wiper value
• The TCON register bits return to controlling the
terminal connection state
Resistor Network
A
TERMINAL CONTROL REGISTER
(TCON)
5.4.3
When the RxHW bit forces the resistor
network into the hardware SHDN state,
the state of the TCON register RxA, RxW,
and RxB bits is overridden (ignored).
When the state of the RxHW bit no longer
forces the resistor network into the
hardware SHDN state, the TCON register
RxA, RxW, and RxB bits return to controlling the terminal connection state. In other
words, the RxHW bit does not corrupt the
state of the RxA, RxW, and RxB bits.
INTERACTION OF SHDN PIN AND
TCON REGISTER
Figure 5-3 shows how the SHDN pin signal and the
RxHW bit signal interact to control the hardware
shutdown of each resistor network (independently).
Using the TCON bits allows each resistor network (Pot
0 and Pot 1) to be individually “shutdown” while the
hardware pin forces both resistor networks to be
“shutdown” at the same time.
W
SHDN (from pin)
RxHW
(from TCON register)
To Pot x Hardware
Shutdown Control
B
FIGURE 5-2:
Hardware Shutdown
Resistor Network Configuration.
© 2008 Microchip Technology Inc.
FIGURE 5-3:
Interaction.
RxHW bit and SHDN pin
DS22059B-page 37
MCP414X/416X/424X/426X
NOTES:
DS22059B-page 38
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
6.0
SERIAL INTERFACE (SPI)
The MCP4XXX devices support the SPI serial protocol.
This SPI operates in the slave mode (does not
generate the serial clock).
The SPI interface uses up to four pins. These are:
•
•
•
•
CS - Chip Select
SCK - Serial Clock
SDI - Serial Data In
SDO - Serial Data Out
Typical SPI Interfaces are shown in Figure 6-1. In the
SPI interface, The Master’s Output pin is connected to
the Slave’s Input pin and the Master’s Input pin is
connected to the Slave’s Output pin.
The MCP4XXX SPI’s module supports two (of the four)
standard SPI modes. These are Mode 0,0 and 1,1.
The SPI mode is determined by the state of the SCK
pin (VIH or VIL) on the when the CS pin transitions from
inactive (VIH) to active (VIL or VIHH).
All SPI interface signals are high-voltage tolerant.
Typical SPI Interface Connections
Host
Controller
MCP4XXX
SDO
( Master Out - Slave In (MOSI) )
SDI
SDI
( Master In - Slave Out (MISO) )
SDO
SCK
SCK
I/O (1)
CS
Typical MCP41X1 SPI Interface Connections (Host Controller Hardware SPI)
Host
Controller
MCP41X1
SDI/SDO
SDO
SDI
SDI
R1(2)
SDO
SCK
I/O
(1)
SCK
CS
Alternate MCP41X1 SPI Interface Connections (Host Controller Firmware SPI)
Host
Controller
I/O
(SDO/SDI)
MCP41X1
SDI/SDO
SDI
SDO
I/O
(SCK)
I/O (1)
SCK
CS
Note 1: If High voltage commands are desired, some type of external circuitry needs to be
implemented.
2:
FIGURE 6-1:
R1 must be sized to ensure VIL and VIH of the devices are met.
Typical SPI Interface Block Diagram.
© 2008 Microchip Technology Inc.
DS22059B-page 39
MCP414X/416X/424X/426X
6.1
SDI, SDO, SCK, and CS Operation
The operation of the four SPI interface pins are
discussed in this section. These pins are:
•
•
•
•
SDI (Serial Data In)
SDO (Serial Data Out)
SCK (Serial Clock)
CS (Chip Select)
6.1.3
Note:
SDI/SDO
MCP41X1 Devices Only .
For device packages that do not have enough pins for
both an SDI and SDO pin, the SDI and SDO
functionality is multiplexed onto a single I/O pin called
SDI/SDO.
The serial interface works on either 8-bit or 16-bit
boundaries depending on the selected command. The
Chip Select (CS) pin frames the SPI commands.
The SDO will only be driven for the command error bit
(CMDERR) and during the data bits of a read command
(after the memory address and command has been
received).
6.1.1
6.1.3.1
SERIAL DATA IN (SDI)
The Serial Data In (SDI) signal is the data signal into
the device. The value on this pin is latched on the rising
edge of the SCK signal.
6.1.2
SERIAL DATA OUT (SDO)
The Serial Data Out (SDO) signal is the data signal out
of the device. The value on this pin is driven on the
falling edge of the SCK signal.
Once the CS pin is forced to the active level (VIL or
VIHH), the SDO pin will be driven. The state of the SDO
pin is determined by the serial bit’s position in the
command, the command selected, and if there is a
command error state (CMDERR).
SDI/SDO Operation
Figure 6-2 shows a block diagram of the SDI/SDO pin.
The SDI signal has an internal “smart” pull-up. The
value of this pull-up determines the frequency that data
can be read from the device. An external pull-up can be
added to the SDI/SDO pin to improve the rise time and
therefore improve the frequency that data can be read.
Note:
To support the High voltage requirement of
the SDI function, the SDO function is an
open-drain output.
Data written on the SDI/SDO pin can be at the
maximum SPI frequency.
Note:
Care must be take to ensure that a Drive
conflict does not exist between the Host
Controllers SDO pin (or software SDI/SDO
pin) and the MCP41x1 SDI/SDO pin (see
Figure 6-1).
On the falling edge of the SCK pin during the C0 bit
(see Figure 7-1), the SDI/SDO pin will start outputting
the SDO value. The SDO signal overrides the control of
the smart pull-up, such that whenever the SDI/SDO pin
is outputting data, the smart pull-up is enabled.
The SDI/SDO pin will change from an input (SDI) to an
output (SDO) after the state machine has received the
Address and Command bits of the Command Byte. If
the command is a Read command, then the SDI/SDO
pin will remain an output for the remainder of the
command. For any other command, the SDI/SDO pin
returns to an input.
“smart” pull-up
SDI/SDO
SDI
Open
Drain
Control
Logic
FIGURE 6-2:
Diagram.
DS22059B-page 40
SDO
Serial I/O Mux Block
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
6.1.4
SERIAL CLOCK (SCK)
(SPI FREQUENCY OF OPERATION)
6.1.5
THE CS SIGNAL
The SPI interface is specified to operate up to 10 MHz.
The actual clock rate depends on the configuration of
the system and the serial command used. Table 6-1
shows the SCK frequency for different configurations.
The Chip Select (CS) signal is used to select the device
and frame a command sequence. To start a command,
or sequence of commands, the CS signal must
transition from the inactive state (VIH) to an active state
(VIL or VIHH).
TABLE 6-1:
After the CS signal has gone active, the SDO pin is
driven and the clock bit counter is reset.
SCK FREQUENCY
Command
Memory Type Access
Read
Non-Volatile
Memory
Write,
Increment,
Decrement
SDI, SDO
10 MHz
10 MHz (2, 3)
(4)
SDI/SDO 250 kHz
10 MHz (2, 3)
(1)
Volatile
Memory
SDI, SDO
10 MHz
SDI/SDO 250 kHz (4)
10 MHz
10 MHz
(1)
Note 1: MCP41X1 devices only
2: Non-Volatile memory does not support
the Increment or Decrement command.
3: After a Write command, the internal write
cycle must complete before the next SPI
command is received.
4: This is the maximum clock frequency
without an external pull-up resistor.
Note:
There is a required delay after the CS pin
goes active to the 1st edge of the SCK pin.
If an error condition occurs for an SPI command, then
the Command byte’s Command Error (CMDERR) bit
(on the SDO pin) will be driven low (VIL). To exit the
error condition, the user must take the CS pin to the VIH
level.
When the CS pin returns to the inactive state (VIH) the
SPI module resets (including the address pointer).
While the CS pin is in the inactive state (VIH), the serial
interface is ignored. This allows the Host Controller to
interface to other SPI devices using the same SDI,
SDO, and SCK signals.
The CS pin has an internal pull-up resistor. The resistor
is disabled when the voltage on the CS pin is at the VIL
level. This means that when the CS pin is not driven,
the internal pull-up resistor will pull this signal to the VIH
level. When the CS pin is driven low (VIL), the
resistance becomes very large to reduce the device
current consumption.
The high voltage capability of the CS pin allows High
Voltage commands. High Voltage commands allow the
device’s WiperLock Technology and write protect
features to be enabled and disabled.
© 2008 Microchip Technology Inc.
DS22059B-page 41
MCP414X/416X/424X/426X
6.2
The SPI Modes
6.3
The SPI module supports two (of the four) standard SPI
modes. These are Mode 0,0 and 1,1. The mode is
determined by the state of the SDI pin on the rising
edge of the 1st clock bit (of the 8-bit byte).
6.2.1
Figure 6-3 through Figure 6-8 show the different SPI
command waveforms. Figure 6-3 and Figure 6-4 are
read and write commands. Figure 6-5 and Figure 6-6
are read commands when the SDI and SDO pins are
multiplexed on the same pin (SDI/SDO). Figure 6-7
and Figure 6-8 are increment and decrement
commands. The high voltage increment and decrement
commands are used to enable and disable WiperLock
Technology and Write Protect.
MODE 0,0
In Mode 0,0: SCK idle state = low (VIL), data is clocked
in on the SDI pin on the rising edge of SCK and clocked
out on the SDO pin on the falling edge of SCK.
6.2.2
SPI Waveforms
MODE 1,1
In Mode 1,1: SCK idle state = high (VIH), data is
clocked in on the SDI pin on the rising edge of SCK and
clocked out on the SDO pin on the falling edge of SCK.
VIH
CS
VIHH
VIL
SCK
Write to
SSPBUF
CMDERR bit
SDO
bit15 bit14 bit13 bit12 bit11
SDI
AD3 AD2 AD1 AD0
bit15 bit14 bit13 bit12
C1
bit10 bit9
bit8
bit7
bit6
bit5
bit4
bit3
bit2
X
bit9
D8
bit8
D7
bit7
D6
bit6
D5
bit5
D4
bit4
D3
bit3
D2
D1
bit2 bit1
C0
bit1
bit0
D0
bit0
Input
Sample
FIGURE 6-3:
VIH
CS
16-Bit Commands (Write, Read) - SPI Waveform (Mode 1,1).
VIHH
VIL
SCK
Write to
SSPBUF
SDO
SDI
CMDERR bit
bit15
bit14 bit13 bit12 bit11
AD3 AD2 AD1 AD0
bit15 bit14 bit13 bit12
C1
bit10 bit9
bit8
bit7
bit6
bit5
bit4
bit3
bit2
X
bit9
D8
bit8
D7
bit7
D6
bit6
D5
bit5
D4
bit4
D3
bit3
D2
D1
bit2 bit1
C0
bit1
bit0
D0
bit0
Input
Sample
FIGURE 6-4:
DS22059B-page 42
16-Bit Commands (Write, Read) - SPI Waveform (Mode 0,0).
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
VIH
CS
VIHH
VIL
SCK
Write to
SSPBUF
CMDERR bit
D9
D8
D7
bit9
bit8 bit7
SDO
AD3 AD2 AD1 AD0
bit15 bit14 bit13 bit12
SDI
C1
1
C0
1
(1)
(1)
(1)
D6
bit6
D5
bit5
D4
bit4
D3
bit3
D2
bit2
D1
bit1
D0
bit0
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Input
Sample
Note 1: The SDI pin will read the state of the SDI pin which will be the SDO signal, unless overdriven
FIGURE 6-5:
16-Bit Read Command for Devices with SDI/SDO multiplexed SPI Waveform (Mode 1,1).
VIH
CS
VIHH
VIL
SCK
Write to
SSPBUF
CMDERR bit
D8
D7
X
bit9
bit8 bit7
SDO
SDI
AD3 AD2 AD1 AD0
bit15 bit14 bit13 bit12
C1
C0
1
1
(1)
(1)
(1)
D4
D3
bit6
D6
bit5
D5
bit4
bit3
bit2
D2
bit1
D1
bit0
D0
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Input
Sample
Note 1: The SDI pin will read the state of the SDI pin which will be the SDO signal, unless overdriven
FIGURE 6-6:
16-Bit Read Command for Devices with SDI/SDO multiplexed SPI Waveform (Mode 0,0).
© 2008 Microchip Technology Inc.
DS22059B-page 43
MCP414X/416X/424X/426X
CS
VIH
VIHH
VIL
SCK
Write to
SSPBUF
CMDERR bit
“1” = “Valid” Command/Address
“0” = “Invalid” Command/Address
SDO
bit7
SDI
AD3
bit6
AD2
bit5
AD1
bit4
AD0
bit3
C1
bit2
C0
bit1
X
bit0
X
bit0
bit7
Input
Sample
FIGURE 6-7:
8-Bit Commands (Increment, Decrement, Modify Write Protect or WiperLock
Technology) - SPI Waveform with PIC MCU (Mode 1,1).
VIH
CS
VIHH
VIL
SCK
Write to
SSPBUF
SDO
SDI
CMDERR bit
“1” = “Valid” Command/Address
“0” = “Invalid” Command/Address
bit7
AD3
bit7
bit6
AD2
bit5
AD1
bit4
AD0
bit3
C1
bit2
C0
bit1
X
bit0
X
bit0
Input
Sample
FIGURE 6-8:
8-Bit Commands (Increment, Decrement, Modify Write Protect or WiperLock
Technology) - SPI Waveform with PIC MCU (Mode 0,0).
DS22059B-page 44
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.0
DEVICE COMMANDS
7.1
Command Byte
The Command Byte has three fields, the Address, the
Command, and 2 Data bits, see Figure 7-1. Currently
only one of the data bits is defined (D8). This is for the
Write command.
The MCP4XXX’s SPI command format supports 16
memory address locations and four commands. Each
command has two modes. These are:
• Normal Serial Commands
• High-Voltage Serial Commands
The device memory is accessed when the master
sends a proper Command Byte to select the desired
operation. The memory location getting accessed is
contained in the Command Byte’s AD3:AD0 bits. The
action desired is contained in the Command Byte’s
C1:C0 bits, see Table 7-1. C1:C0 determines if the
desired memory location will be read, written,
Incremented (wiper setting +1) or Decremented (wiper
setting -1). The Increment and Decrement commands
are only valid on the volatile wiper registers, and in
High Voltage commands to enable/disable WiperLock
Technology and Software Write Protect.
Normal serial commands are those where the CS pin is
driven to VIL. With High-Voltage Serial Commands, the
CS pin is driven to VIHH. In each mode, there are four
possible commands. These commands are shown in
Table 7-1.
The 8-bit commands (Increment Wiper and Decrement Wiper commands) contain a Command Byte,
see Figure 7-1, while 16-bit commands (Read Data
and Write Data commands) contain a Command Byte
and a Data Byte. The Command Byte contains two data
bits, see Figure 7-1.
As the Command Byte is being loaded into the device
(on the SDI pin), the device’s SDO pin is driving. The
SDO pin will output high bits for the first six bits of that
command. On the 7th bit, the SDO pin will output the
CMDERR bit state (see Section 7.3 “Error Condition”). The 8th bit state depends on the the command
selected.
Table 7-2 shows the supported commands for each
memory location and the corresponding values on the
SDI and SDO pins.
Table 7-3 shows an overview of all the SPI commands
and their interaction with other device features.
TABLE 7-1:
COMMAND BIT OVERVIEW
C1:C0
Bit
Command
States
11
00
01
10
Operates on
Volatile/
Non-Volatile
memory
# of
Bits
Read Data
16-Bits
Both
Write Data
16-Bits
Both
Increment (1)
8-Bits
Volatile Only
Decrement (1)
8-Bits
Volatile Only
Note 1: High Voltage Increment and Decrement
commands on select non-volatile memory
locations
enable/disable
WiperLock
Technology and the software Write
Protect feature.
16-bit Command
8-bit Command
Command Byte
A A A A C C D D
D D D D 1 0 9 8
3 2 1 0
Memory
Address
Data
Bits
Command
Bits
FIGURE 7-1:
Command Byte
Data Byte
A A A A C C D D D D D D D D D D
D D D D 1 0 9 8 7 6 5 4 3 2 1 0
3 2 1 0
Data
Bits
Memory
Address
Command
Bits
Command
Bits
CC
1 0
0 0 = Write Data
0 1 = INCR
1 0 = DECR
1 1 = Read Data
General SPI Command Formats.
© 2008 Microchip Technology Inc.
DS22059B-page 45
MCP414X/416X/424X/426X
TABLE 7-2:
MEMORY MAP AND THE SUPPORTED COMMANDS
Address
Command
Value
00h
01h
02h
03h
Function
Volatile Wiper 0
Volatile Wiper 1
NV Wiper 0
NV Wiper 1
Data
(10-bits) (1)
SPI String (Binary)
MISO (SDO pin) (2)
MOSI (SDI pin)
Write Data
nn nnnn nnnn
0000 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0000 11nn nnnn nnnn
1111 111n nnnn nnnn
Increment Wiper
—
0000 0100
1111 1111
Decrement Wiper
—
0000 1000
1111 1111
Write Data
nn nnnn nnnn
0001 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0001 11nn nnnn nnnn
1111 111n nnnn nnnn
Increment Wiper
—
0001 0100
1111 1111
Decrement Wiper
—
0001 1000
1111 1111
Write Data
nn nnnn nnnn
0010 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0010 11nn nnnn nnnn
1111 111n nnnn nnnn
HV Inc. (WL0 DIS) (3)
—
0010 0100
1111 1111
HV Dec. (WL0 EN) (4)
—
0010 1000
1111 1111
Write Data
nn nnnn nnnn
0011 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0011 11nn nnnn nnnn
1111 111n nnnn nnnn
HV Inc. (WL1 DIS) (3)
—
0011 0100
1111 1111
HV Dec. (WL1 EN) (4)
—
0011 1000
1111 1111
04h (5) Volatile
TCON Register
Write Data
nn nnnn nnnn
0100 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0100 11nn nnnn nnnn
1111 111n nnnn nnnn
05h (5) Status Register
Read Data
nn nnnn nnnn
0101 11nn nnnn nnnn
1111 111n nnnn nnnn
06h (5) Data EEPROM
Write Data
nn nnnn nnnn
0110 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0110 11nn nnnn nnnn
1111 111n nnnn nnnn
07h (5) Data EEPROM
Write Data
nn nnnn nnnn
0111 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
0111 11nn nnnn nnnn
1111 111n nnnn nnnn
08h (5) Data EEPROM
Write Data
nn nnnn nnnn
1000 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1000 11nn nnnn nnnn
1111 111n nnnn nnnn
09h (5) Data EEPROM
Write Data
nn nnnn nnnn
1001 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1001 11nn nnnn nnnn
1111 111n nnnn nnnn
0Ah (5) Data EEPROM
Write Data
nn nnnn nnnn
1010 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1010 11nn nnnn nnnn
1111 111n nnnn nnnn
0Bh (5) Data EEPROM
Write Data
nn nnnn nnnn
1011 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1011 11nn nnnn nnnn
1111 111n nnnn nnnn
Write Data
nn nnnn nnnn
1100 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1100 11nn nnnn nnnn
1111 111n nnnn nnnn
0Dh (5) Data EEPROM
Write Data
nn nnnn nnnn
1101 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1101 11nn nnnn nnnn
1111 111n nnnn nnnn
0Eh (5) Data EEPROM
Write Data
nn nnnn nnnn
1110 00nn nnnn nnnn
1111 1111 1111 1111
0Ch (5) Data EEPROM
0Fh
Data EEPROM
Note 1:
2:
3:
4:
5:
Read Data
nn nnnn nnnn
1110 11nn nnnn nnnn
1111 111n nnnn nnnn
Write Data
nn nnnn nnnn
1111 00nn nnnn nnnn
1111 1111 1111 1111
Read Data
nn nnnn nnnn
1111 11nn nnnn nnnn
1111 111n nnnn nnnn
HV Inc. (WP DIS) (3)
—
1111 0100
1111 1111
HV Dec. (WP EN) (4)
—
1111 1000
1111 1111
The Data Memory is only 9-bits wide, so the MSb is ignored by the device.
All these Address/Command combinations are valid, so the CMDERR bit is set. Any other Address/Command combination is a command error state and the CMDERR bit will be clear.
Disables WiperLock Technology for wiper 0 or wiper 1, or disables Write Protect.
Enables WiperLock Technology for wiper 0 or wiper 1, or enables Write Protect.
Reserved addresses: Increment or Decrement commands are invalid for these addresses.
DS22059B-page 46
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.2
Data Byte
Only the Read Command and the Write Command use
the Data Byte, see Figure 7-1. These commands
concatenate the 8-bits of the Data Byte with the one
data bit (D8) contained in the Command Byte to form
9-bits of data (D8:D0). The Command Byte format
supports up to 9-bits of data so that the 8-bit resistor
network can be set to Full Scale (100h or greater). This
allows wiper connections to Terminal A and to
Terminal B.
The D9 bit is currently unused, and corresponds to the
position on the SDO data of the CMDERR bit.
7.3
Error Condition
The CMDERR bit indicates if the four address bits
received (AD3:AD0) and the two command bits
received (C1:C0) are a valid combination (see
Table 4-1). The CMDERR bit is high if the combination
is valid and low if the combination is invalid.
The command error bit will also be low if a write to a
Non-Volatile Address has been specified and another
SPI command occurs before the CS pin is driven
inactive (VIH).
SPI commands that do not have a multiple of 8 clocks
are ignored.
Once an error condition has occurred, any following
commands are ignored. All following SDO bits will be
low until the CMDERR condition is cleared by forcing
the CS pin to the inactive state (VIH).
© 2008 Microchip Technology Inc.
7.3.1
ABORTING A TRANSMISSION
All SPI transmissions must have the correct number of
SCK pulses to be executed. The command is not
executed until the complete number of clocks have
been received. Some commands also require the CS
pin to be forced inactive (VIH). If the CS pin is forced to
the inactive state (VIH) the serial interface is reset.
Partial commands are not executed.
SPI is more susceptible to noise than other bus
protocols. The most likely case is that this noise
corrupts the value of the data being clocked into the
MCP4XXX or the SCK pin is injected with extra clock
pulses. This may cause data to be corrupted in the
device, or a command error to occur, since the address
and command bits were not a valid combination. The
extra SCK pulse will also cause the SPI data (SDI) and
clock (SCK) to be out of sync. Forcing the CS pin to the
inactive state (VIH) resets the serial interface. The SPI
interface will ignore activity on the SDI and SCK pins
until the CS pin transition to the active state is detected
(VIH to VIL or VIH to VIHH).
Note 1: When data is not being received by the
MCP4XXX, It is recommended that the
CS pin be forced to the inactive level (VIL)
2: It is also recommended that long continuous command strings should be broken
down into single commands or shorter
continuous command strings. This
reduces the probability of noise on the
SCK pin corrupting the desired SPI
commands.
DS22059B-page 47
MCP414X/416X/424X/426X
7.4
Continuous Commands
The device supports the ability to execute commands
continuously. While the CS pin is in the active state (VIL
or VIHH). Any sequence of valid commands may be
received.
The following example is a valid sequence of events:
1.
2.
3.
4.
5.
6.
7.
8.
Note 1: It is recommended that while the CS pin is
active, only one type of command should
be issued. When changing commands, it
is recommended to take the CS pin
inactive then force it back to the active
state.
2: It is also recommended that long
command strings should be broken down
into shorter command strings. This
reduces the probability of noise on the
SCK pin corrupting the desired SPI
command string.
CS pin driven active (VIL or VIHH).
Read Command.
Increment Command (Wiper 0).
Increment Command (Wiper 0).
Decrement Command (Wiper 1).
Write Command (Volatile memory).
Write Command (Non-Volatile memory).
CS pin driven inactive (VIH).
TABLE 7-3:
COMMANDS
Command Name
# of
Bits
Operates on
High
Writes
Volatile/
Voltage
Value in
Non-Volatile (VIHH) on
EEPROM
CS pin?
memory
Impact on
WiperLock or
Write Protect
Works
when
Wiper is
“locked”?
Write Data
16-Bits
Yes (1)
Both
—
unlocked (1)
No
Read Data
16-Bits
—
Both
—
unlocked (1)
No
(1)
No
No
Increment Wiper
8-Bits
—
Volatile Only
—
unlocked
Decrement Wiper
8-Bits
—
Volatile Only
—
unlocked (1)
High Voltage Write Data
16-Bits
Yes
Both
Yes
unchanged
No
High Voltage Read Data
16-Bits
—
Both
Yes
unchanged
Yes
High Voltage Increment Wiper
8-Bits
—
Volatile Only
Yes
unchanged
No
High Voltage Decrement Wiper
8-Bits
—
Volatile Only
Yes
unchanged
No
(2)
Non-Volatile
Only (2)
Yes
locked/
protected (2)
Yes
Non-Volatile
Only (3)
Yes
unlocked/
unprotected (3)
Yes
Modify Write Protect or WiperLock Technology (High Voltage) Enable
8-Bits
—
Modify Write Protect or WiperLock Technology (High Voltage) Disable
8-Bits
— (3)
Note 1: This command will only complete if wiper is “unlocked” (WiperLock Technology is Disabled).
2: If the command is executed using address 02h or 03h, then that corresponding wiper is locked or
if with address 0Fh, then Write Protect is enabled.
3: If the command is executed using with address 02h or 03h, then that corresponding wiper is unlocked or
if with address 0Fh, then Write Protect is disabled.
DS22059B-page 48
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.5
7.5.2
Write Data
Normal and High Voltage
The sequence to write to to a single non-volatile
memory location is the same as a single write to volatile
memory with the exception that after the CS pin is
driven inactive (VIH), the EEPROM write cycle (tWC) is
started. A write cycle will not start if the write command
isn’t exactly 16 clocks pulses. This protects against
system issues from corrupting the Non-Volatile
memory locations.
The Write command is a 16-bit command. The Write
Command can be issued to both the Volatile and
Non-Volatile memory locations. The format of the
command is shown in Figure 7-2.
A Write command to a Volatile memory location
changes that location after a properly formatted Write
Command (16-clock) have been received.
A Write command to a Non-Volatile memory location
will only start a write cycle after a properly formatted
Write Command (16-clock) have been received and the
CS pin transitions to the inactive state (VIH).
Note:
7.5.1
SINGLE WRITE TO NON-VOLATILE
MEMORY
After the CS pin is driven inactive (VIH), the serial
interface may immediately be re-enabled by driving the
CS pin to the active state (VILor VIHH).
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
Writes to certain memory locations will be
dependant on the state of the WiperLock
Technology bits and the Write Protect bit.
SINGLE WRITE TO VOLATILE
MEMORY
The write operation requires that the CS pin be in the
active state (VILor VIHH). Typically, the CS pin will be in
the inactive state (VIH) and is driven to the active state
(VIL). The 16-bit Write Command (Command Byte and
Data Byte) is then clocked in on the SCK and SDI pins.
Once all 16 bits have been received, the specified
volatile address is updated. A write will not occur if the
write command isn’t exactly 16 clocks pulses. This
protects against system issues from corrupting the
Non-Volatile memory locations.
Once a write command to a Non-Volatile memory
location has been received, NO other SPI commands
should be received before the CS pin transitions to the
inactive state (VIH) or the current SPI command will
have a Command Error (CMDERR) occur.
Figure 6-3 and Figure 6-4 show possible waveforms
for a single write.
COMMAND BYTE
A
D
3
1
SDO
1
SDI
A
D
2
1
1
A
D
1
1
1
A
D
0
1
1
DATA BYTE
0
0
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1 Valid Address/Command combination
0 Invalid Address/Command combination (1)
Note 1: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
FIGURE 7-2:
Write Command - SDI and SDO States.
© 2008 Microchip Technology Inc.
DS22059B-page 49
MCP414X/416X/424X/426X
7.5.3
CONTINUOUS WRITES TO
VOLATILE MEMORY
7.5.4
Continuous writes are possible only when writing to the
volatile memory registers (address 00h, 01h, and 04h).
Continuous writes to non-volatile memory are not
allowed, and attempts to do so will result in a command
error (CMDERR) condition.
Figure 7-3 shows the sequence for three continuous
writes. The writes do not need to be to the same volatile
memory address.
COMMAND BYTE
SDI
SDO
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
CONTINUOUS WRITES TO
NON-VOLATILE MEMORY
DATA BYTE
0
0
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
1
1*
1
1
1
1
1
1
1
1
1
0
0
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
1
1*
1
1
1
1
1
1
1
1
1
0
0
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
1
1*
1
1
1
1
1
1
1
1
1
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS pin is driven inactive (VIH).
FIGURE 7-3:
DS22059B-page 50
Continuous Write Sequence (Volatile Memory only).
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.6
7.6.1
Read Data
Normal and High Voltage
The read operation requires that the CS pin be in the
active state (VILor VIHH). Typically, the CS pin will be in
the inactive state (VIH) and is driven to the active state
(VILor VIHH). The 16-bit Read Command (Command
Byte and Data Byte) is then clocked in on the SCK and
SDI pins. The SDO pin starts driving data on the 7th bit
(CMDERR bit) and the addressed data comes out on
the 8th through 16th clocks. Figure 6-3 through
Figure 6-6 show possible waveforms for a single read.
The Read command is a 16-bit command. The Read
Command can be issued to both the Volatile and
Non-Volatile memory locations. The format of the
command is shown in Figure 7-4.
The first 6-bits of the Read command determine the
address and the command. The 7th clock will output
the CMDERR bit on the SDO pin. The remaining
9-clocks the device will transmit the 9 data bits (D8:D0)
of the specified address (AD3:AD0).
Figure 6-5 and Figure 6-6 show the single read
waveforms when the SDI and SDO signals are
multiplexed on the same pin. For additional information
on the multiplexing of these signals, refer to
Section 6.1.3 “SDI/SDO”.
Figure 7-4 shows the SDI and SDO information for a
Read command.
During a write cycle (Write or High Voltage Write to a
Non-Volatile memory location) the Read command can
only read the Volatile memory locations. By reading the
Status Register (04h), the Host Controller can
determine when the write cycle has completed (via the
state of the EEWA bit).
COMMAND BYTE
SDI
SDO
SINGLE READ
DATA BYTE
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
1
1
X
X
X
X
X
X
X
X
X
X
1
1
1
1
1
1
1
1
1
0
D
8
0
D
7
0
D
6
0
D
5
0
D
4
0
D
3
0
D
2
0
D
1
0
D Valid Address/Command combination
0
0 Attempted Non-Volatile Memory Read
during Non-Volatile Memory Write Cycle
READ DATA
FIGURE 7-4:
Read Command - SDI and SDO States.
© 2008 Microchip Technology Inc.
DS22059B-page 51
MCP414X/416X/424X/426X
7.6.2
CONTINUOUS READS
Figure 7-5 shows the sequence for three continuous
reads. The reads do not need to be to the same
memory address.
Continuous reads allows the devices memory to be
read quickly. Continuous reads are possible to all
memory locations. If a non-volatile memory write cycle
is occurring, then Read commands may only access
the volatile memory locations.
COMMAND BYTE
SDI
SDO
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
A
D
3
1
A
D
2
1
A
D
1
1
A
D
0
1
DATA BYTE
1
1
X
X
X
X
X
X
X
X
X
X
1
1
1* D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
1
X
X
X
X
X
X
X
X
X
X
1
1
1* D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
1
X
X
X
X
X
X
X
X
X
X
1
1
1* D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS pin is driven inactive (VIH).
FIGURE 7-5:
DS22059B-page 52
Continuous Read Sequence.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.7
Increment Wiper
Normal and High Voltage
The Increment Command is an 8-bit command. The
Increment Command can only be issued to volatile
memory locations. The format of the command is
shown in Figure 7-6.
An Increment Command to the volatile memory
location changes that location after a properly
formatted command (8-clocks) have been received.
Increment commands provide a quick and easy
method to modify the value of the volatile wiper location
by +1 with minimal overhead.
COMMAND BYTE
(INCR COMMAND (n+1) )
A
D
3
1
SDO
1
SDI
A
D
2
1
1
A
D
1
1
1
A
D
0
1
1
0
1
X
X
1
1
1
1
1*
0
1 Note 1, 2
0 Note 1, 3
Note 1: Only functions when writing the volatile
wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination
all following SDO bits will be low until the
CMDERR condition is cleared.
(the CS pin is forced to the inactive
state).
4: If a Command Error (CMDERR) occurs
at this bit location (*), then all following
SDO bits will be driven low until the CS
pin is driven inactive (VIH).
FIGURE 7-6:
Increment Command SDI and SDO States.
Note:
Table 7-2 shows the valid addresses for
the Increment Wiper command. Other
addresses are invalid.
© 2008 Microchip Technology Inc.
7.7.1
SINGLE INCREMENT
Typically, the CS pin starts at the inactive state (VIH),
but may be already be in the active state due to the
completion of another command.
Figure 6-7 through Figure 6-8 show possible
waveforms for a single increment. The increment
operation requires that the CS pin be in the active state
(VILor VIHH). Typically, the CS pin will be in the inactive
state (VIH) and is driven to the active state (VILor VIHH).
The 8-bit Increment Command (Command Byte) is
then clocked in on the SDI pin by the SCK pins. The
SDO pin drives the CMDERR bit on the 7th clock.
The wiper value will increment up to 100h on 8-bit
devices and 80h on 7-bit devices. After the wiper value
has reached Full Scale (8-bit =100h, 7-bit =80h), the
wiper value will not be incremented further. If the Wiper
register has a value between 101h and 1FFh, the
Increment command is disabled. See Table 7-4 for
additional information on the Increment Command
versus the current volatile wiper value.
The Increment operations only require the Increment
command byte while the CS pin is active (VILor VIHH)
for a single increment.
After the wiper is incremented to the desired position,
the CS pin should be forced to VIH to ensure that
unexpected transitions on the SCK pin do not cause
the wiper setting to change. Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired increment occurs.
TABLE 7-4:
Current Wiper
Setting
7-bit
Pot
8-bit
Pot
3FFh
081h
080h
07Fh
041h
040h
03Fh
001h
000h
3FFh
101h
100h
0FFh
081
080h
07Fh
001
000h
INCREMENT OPERATION VS.
VOLATILE WIPER VALUE
Increment
Command
Operates?
Wiper (W)
Properties
Reserved
(Full-Scale (W = A))
Full-Scale (W = A)
W=N
No
W = N (Mid-Scale)
W=N
Yes
Zero Scale (W = B)
Yes
No
DS22059B-page 53
MCP414X/416X/424X/426X
7.7.2
CONTINUOUS INCREMENTS
Increment commands can be sent repeatedly without
raising CS until a desired condition is met. The value in
the Volatile Wiper register can be read using a Read
Command and written to the corresponding
Non-Volatile Wiper EEPROM using a Write Command.
Continuous Increments are possible only when writing
to the volatile memory registers (address 00h, and
01h).
Figure 7-7 shows a Continuous Increment sequence
for three continuous writes. The writes do not need to
be to the same volatile memory address.
When executing a continuous command string, The
Increment command can be followed by any other valid
command.
When executing an continuous Increment commands,
the selected wiper will be altered from n to n+1 for each
Increment command received. The wiper value will
increment up to 100h on 8-bit devices and 80h on 7-bit
devices. After the wiper value has reached Full-Scale
(8-bit =100h, 7-bit =80h), the wiper value will not be
incremented further. If the Wiper register has a value
between 101h and 1FFh, the Increment command is
disabled.
(INCR COMMAND (n+1) )
A
D
3
1
1
SDO
1
1
A
D
2
1
1
1
1
A
D
1
1
1
1
1
A
D
0
1
1
1
1
After the wiper is incremented to the desired position,
the CS pin should be forced to VIH to ensure that
unexpected transitions (on the SCK pin do not cause
the wiper setting to change). Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired increment occurs.
COMMAND BYTE
COMMAND BYTE
COMMAND BYTE
SDI
The wiper terminal will move after the command has
been received (8th clock).
(INCR COMMAND (n+2) )
0
1
X
X
1
1
1
1
1
1
1
1
1*
0
1
1
1
0
1
1
A
D
3
1
0
1
1
A
D
2
1
0
1
1
A
D
1
1
0
1
1
A
D
0
1
0
1
1
(INCR COMMAND (n+3) )
0
1
X
X
1
0
1
1
1
0
1
1
1*
0
0
1
1
0
0
1
A
D
3
1
0
0
1
A
D
2
1
0
0
1
A
D
1
1
0
0
1
A
D
0
1
0
0
1
0
1
X
X
1
0
0
1
1
0
0
1
1*
0
0
0
1
0
0
0
Note 1, 2
Note 3, 4
Note 3, 4
Note 3, 4
Note 1: Only functions when writing the volatile wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination.
4: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
FIGURE 7-7:
DS22059B-page 54
Continuous Increment Command - SDI and SDO States.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.8
Decrement Wiper
Normal and High Voltage
The Decrement Command is an 8-bit command. The
Decrement Command can only be issued to volatile
memory locations. The format of the command is
shown in Figure 7-6.
An Decrement Command to the volatile memory
location changes that location after a properly
formatted command (8-clocks) have been received.
Decrement commands provide a quick and easy
method to modify the value of the volatile wiper location
by -1 with minimal overhead.
COMMAND BYTE
(DECR COMMAND (n+1))
A
D
3
1
SDO
1
SDI
A
D
2
1
1
A
D
1
1
1
A
D
0
1
1
1
0
X
X
1
1
1
1
1*
0
1 Note 1, 2
0 Note 1, 3
Note 1: Only functions when writing the volatile
wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination
all following SDO bits will be low until the
CMDERR condition is cleared.
(the CS pin is forced to the inactive
state).
4: If a Command Error (CMDERR) occurs
at this bit location (*), then all following
SDO bits will be driven low until the CS
pin is driven inactive (VIH).
FIGURE 7-8:
Decrement Command SDI and SDO States.
Note:
Table 7-2 shows the valid addresses for
the Decrement Wiper command. Other
addresses are invalid.
© 2008 Microchip Technology Inc.
7.8.1
SINGLE DECREMENT
Typically the CS pin starts at the inactive state (VIH), but
may be already be in the active state due to the
completion of another command.
Figure 6-7 through Figure 6-8 show possible
waveforms for a single Decrement. The decrement
operation requires that the CS pin be in the active state
(VILor VIHH). Typically the CS pin will be in the inactive
state (VIH) and is driven to the active state (VILor VIHH).
Then the 8-bit Decrement Command (Command Byte)
is clocked in on the SDI pin by the SCK pins. The SDO
pin drives the CMDERR bit on the 7th clock.
The wiper value will decrement from the wipers Full
Scale value (100h on 8-bit devices and 80h on 7-bit
devices). Above the wipers Full Scale value
(8-bit =101h to 1FFh, 7-bit = 81h to FFh), the
decrement command is disabled. If the Wiper register
has a Zero Scale value (000h), then the wiper value will
not decrement. See Table 7-4 for additional information
on the Decrement Command vs. the current volatile
wiper value.
The Decrement commands only require the Decrement
command byte, while the CS pin is active (VILor VIHH)
for a single decrement.
After the wiper is decremented to the desired position,
the CS pin should be forced to VIH to ensure that
unexpected transitions on the SCK pin do not cause
the wiper setting to change. Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired decrement occurs.
TABLE 7-5:
Current Wiper
Setting
7-bit
Pot
8-bit
Pot
3FFh
081h
080h
07Fh
041h
040h
03Fh
001h
000h
3FFh
101h
100h
0FFh
081
080h
07Fh
001
000h
DECREMENT OPERATION VS.
VOLATILE WIPER VALUE
Decrement
Command
Operates?
Wiper (W)
Properties
Reserved
(Full-Scale (W = A))
Full-Scale (W = A)
W=N
No
Yes
W = N (Mid-Scale)
W=N
Yes
Zero Scale (W = B)
No
DS22059B-page 55
MCP414X/416X/424X/426X
7.8.2
CONTINUOUS DECREMENTS
Decrement commands can be sent repeatedly without
raising CS until a desired condition is met. The value in
the Volatile Wiper register can be read using a Read
Command and written to the corresponding
Non-Volatile Wiper EEPROM using a Write Command.
Continuous Decrements are possible only when writing
to the volatile memory registers (address 00h, 01h, and
04h).
Figure 7-9 shows a continuous Decrement sequence
for three continuous writes. The writes do not need to
be to the same volatile memory address.
When executing a continuous command string, The
Decrement command can be followed by any other
valid command.
When executing an continuous Decrement commands,
the selected wiper will be altered from n to n-1 for each
Decrement command received. The wiper value will
decrement from the wipers Full Scale value (100h on
8-bit devices and 80h on 7-bit devices). Above the
wipers Full-Scale value (8-bit =101h to 1FFh,
7-bit = 81h to FFh), the decrement command is
disabled. If the Wiper register has a Zero Scale value
(000h), then the wiper value will not decrement. See
Table 7-4 for additional information on the Decrement
Command vs. the current volatile wiper value.
(DECR COMMAND (n-1) )
A
D
3
1
1
SDO
1
1
A
D
2
1
1
1
1
A
D
1
1
1
1
1
A
D
0
1
1
1
1
After the wiper is decremented to the desired position,
the CS pin should be forced to VIH to ensure that
“unexpected” transitions (on the SCK pin do not cause
the wiper setting to change). Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired decrement occurs.
COMMAND BYTE
COMMAND BYTE
COMMAND BYTE
SDI
The wiper terminal will move after the command has
been received (8th clock).
1
0
X
X
1
1
1
1
1
1
1
1
1*
0
1
1
1
0
1
1
(DECR COMMAND (n-1) )
A
D
3
1
0
1
1
A
D
2
1
0
1
1
A
D
1
1
0
1
1
A
D
0
1
0
1
1
1
0
X
X
1
0
1
1
1
0
1
1
1*
0
0
1
1
0
0
1
(DECR COMMAND (n-1) )
A
D
3
1
0
0
1
A
D
2
1
0
0
1
A
D
1
1
0
0
1
A
D
0
1
0
0
1
1
0
X
X
1
0
0
1
1
0
0
1
1*
0
0
0
1
0
0
0
Note 1, 2
Note 3, 4
Note 3, 4
Note 3, 4
Note 1: Only functions when writing the volatile wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination.
4: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
FIGURE 7-9:
DS22059B-page 56
Continuous Decrement Command - SDI and SDO States.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
7.9
Modify Write Protect or WiperLock
Technology (High Voltage)
Enable and Disable
This command is a special case of the High Voltage
Decrement Wiper and High Voltage Increment Wiper
commands to the non-volatile memory locations 02h,
03h, and 0Fh. This command is used to enable or
disable either the software Write Protect, wiper 0
WiperLock Technology, or wiper 1 WiperLock Technology. Table 7-6 shows the memory addresses, the High
Voltage command and the result of those commands
on the non-volatile WP, WL0, 0r WL1 bits. The format
of the command is shown in Figure 7-8 (Enable) or
Figure 7-6 (Disable).
7.9.1
SINGLE ENABLE WRITE PROTECT
OR WIPERLOCK TECHNOLOGY
(HIGH VOLTAGE)
Figure 6-7 through Figure 6-8 show possible
waveforms for a single Modify Write Protect or
WiperLock Technology command.
A Modify Write Protect or WiperLock Technology
Command will only start an EEPROM write cycle (twc)
after a properly formatted Command (8-clocks) has
been received and the CS pin transitions to the inactive
state (VIH).
After the CS pin is driven inactive (VIH), the serial
interface may immediately be re-enabled by driving the
CS pin to the active state (VILor VIHH).
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
TABLE 7-6:
Memory
Address
ADDRESS MAP TO MODIFY WRITE PROTECT AND WIPERLOCK TECHNOLOGY
Command’s and Result
High Voltage Decrement Wiper
High Voltage Increment Wiper
00h
Wiper 0 register is decremented
Wiper 0 register is incremented
01h
Wiper 1 register is decremented
Wiper 1 register is incremented
02h
WL0 is enabled
WL0 is disabled
03h
WL1 is enabled
WL1 is disabled
04h (1)
TCON register not changed, CMDERR bit is set TCON register not changed, CMDERR bit is set
05h - 0Eh (1)
Reserved
Reserved
0Fh
WP is enabled
WP is disabled
Note 1: Reserved addresses: Increment or Decrement commands are invalid for these addresses.
© 2008 Microchip Technology Inc.
DS22059B-page 57
MCP414X/416X/424X/426X
NOTES:
DS22059B-page 58
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
8.0
APPLICATIONS EXAMPLES
Non-volatile digital potentiometers have a multitude of
practical uses in modern electronic circuits. The most
popular uses include precision calibration of set point
thresholds, sensor trimming, LCD bias trimming, audio
attenuation, adjustable power supplies, motor control
overcurrent trip setting, adjustable gain amplifiers and
offset trimming. The MCP414X/416X/424X/426X
devices can be used to replace the common mechanical trim pot in applications where the operating and
terminal voltages are within CMOS process limitations
(VDD = 2.7V to 5.5V).
8.1
Split Rail Applications
All inputs that would be used to interface to a Host
Controller support High Voltage on their input pin. This
allows the MCP4XXX device to be used in split power
rail applications.
5V
SDI
CS
SCK
WP
SHDN
SDO
FIGURE 8-1:
System 1.
Figure 8-1 through Figure 8-2 show three example split
rail systems. In this system, the MCP4XXX interface
input signals need to be able to support the PIC MCU
output high voltage (VOH).
In Example #1 (Figure 8-1), the MCP4XXX interface
input signals need to be able to support the PIC MCU
output high voltage (VOH). If the split rail voltage delta
becomes too large, then the customer may be required
to do some level shifting due to MCP4XXX VOH levels
related to Host Controller VIH levels.
In Example #2 (Figure 8-2), the MCP4XXX interface
input signals need to be able to support the lower
voltage of the PIC MCU output high voltage level (VOH).
Table 8-1 shows an example PIC microcontroller I/O
voltage specifications and the MCP4XXX specifications. So this PIC MCU operating at 3.3V will drive a
VOH at 2.64V, and for the MCP4XXX operating at 5.5V,
the VIH is 2.47V. Therefore, the interface signals meet
specifications.
© 2008 Microchip Technology Inc.
SDI
CS
SCK
WP
SHDN
SDO
Example Split Rail
5V
Voltage
Regulator
3V
MCP4XXX
PIC MCU
SDI
CS
SCK
WP
SHDN
SDI
CS
SCK
WP
SHDN
For SPI applications, these inputs are:
CS
SCK
SDI (or SDI/SDO)
WP
SHDN
MCP4XXX
PIC MCU
An example of this is a battery application where the
PIC® MCU is directly powered by the battery supply
(4.8V) and the MCP4XXX device is powered by the
3.3V regulated voltage.
•
•
•
•
•
3V
Voltage
Regulator
SDO
SDO
FIGURE 8-2:
System 2.
Example Split Rail
TABLE 8-1:
VOH - VIH COMPARISONS
PIC
(1)
MCP4XXX (2)
Comment
VDD
5.5
5.0
4.5
3.3
3.0
2.7
Note
VIH
VOH VDD
VIH
VOH
4.4
4.4
2.7 1.215 — (3)
4.0
4.0
3.0 1.35 — (3)
3.6
3.6
3.3 1.485 — (3)
2.64 2.64 4.5 2.025 — (3)
2.4
2.4
5.0 2.25 — (3)
2.16 2.16 5.5 2.475 — (3)
1: VOH minimum = 0.8 * VDD;
VOL maximum = 0.6V
VIH minimum = 0.8 * VDD;
VIL maximum = 0.2 * VDD;
2: VOH minimum (SDA only) =;
VOL maximum = 0.2 * VDD
VIH minimum = 0.45 * VDD;
VIL maximum = 0.2 * VDD
3: The only MCP4XXX output pin is SDO,
which is Open-Drain (or Open-Drain with
Internal Pull-up) with High Voltage Support
DS22059B-page 59
MCP414X/416X/424X/426X
8.2
Techniques to force the CS pin to
VIHH
PIC10F206
The circuit in Figure 8-3 shows a method using the
TC1240A doubling charge pump. When the SHDN pin
is high, the TC1240A is off, and the level on the CS pin
is controlled by the PIC® microcontrollers (MCUs) IO2
pin.
When the SHDN pin is low, the TC1240A is on and the
VOUT voltage is 2 * VDD. The resistor R1 allows the CS
pin to go higher than the voltage such that the PIC
MCU’s IO2 pin “clamps” at approximately VDD.
PIC MCU
TC1240A
C+
VIN
CSHDN
VOUT
IO1
IO2
C1
MCP402X
R1
CS
C2
FIGURE 8-3:
Using the TC1240A to
generate the VIHH voltage.
The circuit in Figure 8-4 shows the method used on the
MCP402X Non-volatile Digital Potentiometer Evaluation Board (Part Number: MCP402XEV). This method
requires that the system voltage be approximately 5V.
This ensures that when the PIC10F206 enters a
brown-out condition, there is an insufficient voltage
level on the CS pin to change the stored value of the
wiper. The MCP402X Non-volatile Digital Potentiometer Evaluation Board User’s Guide (DS51546) contains
a complete schematic.
R1
GP0
MCP4XXX
GP2
CS
C1
C2
FIGURE 8-4:
MCP4XXX Non-volatile
Digital Potentiometer Evaluation Board
(MCP402XEV) implementation to generate the
VIHH voltage.
8.3
Using Shutdown Modes
Figure 8-5 shows a possible application circuit where
the independent terminals could be used.
Disconnecting the wiper allows the transistor input to
be taken to the Bias voltage level (disconnecting A and
or B may be desired to reduce system current).
Disconnecting Terminal A modifies the transistor input
by the RBW rheostat value to the Common B.
Disconnecting Terminal B modifies the transistor input
by the RAW rheostat value to the Common A. The
Common A and Common B connections could be
connected to VDD and VSS.
Common A
Input
A
GP0 is a general purpose I/O pin, while GP2 can either
be a general purpose I/O pin or it can output the internal
clock.
For high-voltage serial commands, force the GP0
output pin to output a high level (VOH) and configure the
GP2 pin to output the internal clock. This will form a
charge pump and increase the voltage on the CS pin
(when the system voltage is approximately 5V).
To base
of Transistor
(or Amplifier)
W
For the serial commands, configure the GP2 pin as an
input (high impedance). The output state of the GP0 pin
will determine the voltage on the CS pin (VIL or VIH).
B
Input
Common B
Balance
Bias
FIGURE 8-5:
Example Application Circuit
using Terminal Disconnects.
DS22059B-page 60
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
8.4
8.4.2
Design Considerations
In the design of a system with the MCP4XXX devices,
the following considerations should be taken into
account:
• Power Supply Considerations
• Layout Considerations
8.4.1
POWER SUPPLY
CONSIDERATIONS
The typical application will require a bypass capacitor
in order to filter high-frequency noise, which can be
induced onto the power supply's traces. The bypass
capacitor helps to minimize the effect of these noise
sources on signal integrity. Figure 8-6 illustrates an
appropriate bypass strategy.
In this example, the recommended bypass capacitor
value is 0.1 µF. This capacitor should be placed as
close (within 4 mm) to the device power pin (VDD) as
possible.
The power source supplying these devices should be
as clean as possible. If the application circuit has
separate digital and analog power supplies, VDD and
VSS should reside on the analog plane.
VDD
Inductively-coupled AC transients and digital switching
noise can degrade the input and output signal integrity,
potentially masking the MCP4XXX’s performance.
Careful board layout minimizes these effects and
increases the Signal-to-Noise Ratio (SNR). Multi-layer
boards utilizing a low-inductance ground plane,
isolated inputs, isolated outputs and proper decoupling
are critical to achieving the performance that the silicon
is capable of providing. Particularly harsh environments may require shielding of critical signals.
If low noise is desired, breadboards and wire-wrapped
boards are not recommended.
8.4.3
VDD
Characterization curves of the resistor temperature
coefficient (Tempco) are shown in Figure 2-8,
Figure 2-19, Figure 2-29, and Figure 2-39.
These curves show that the resistor network is
designed to correct for the change in resistance as
temperature increases. This technique reduces the
end to end change is RAB resistance.
8.4.4
VSS
FIGURE 8-6:
Connections.
PIC® Microcontroller
MCP414X/416X/
424X/426X
B
U/D
HIGH VOLTAGE TOLERANT PINS
High Voltage support (VIHH) on the Serial Interface pins
supports two features. These are:
Note:
0.1 µF
W
RESISTOR TEMPCO
• In-Circuit Accommodation of split rail applications
and power supply sync issues
• User configuration of the Non-Volatile EEPROM,
Write Protect, and WiperLock feature
0.1 µF
A
LAYOUT CONSIDERATIONS
In many applications, the High Voltage will
only be present at the manufacturing
stage so as to “lock” the Non-Volatile wiper
value (after calibration) and the contents
of the EEPROM. This ensures that the
since High Voltage is not present under
normal operating conditions, that these
values can not be modified.
CS
VSS
Typical Microcontroller
© 2008 Microchip Technology Inc.
DS22059B-page 61
MCP414X/416X/424X/426X
NOTES:
DS22059B-page 62
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
9.0
DEVELOPMENT SUPPORT
9.1
Development Tools
9.2
Technical Documentation
Several additional technical documents are available to
assist you in your design and development. These
technical documents include Application Notes,
Technical Briefs, and Design Guides. Table 9-2 shows
some of these documents.
Several development tools are available to assist in
your design and evaluation of the MCP4XXX devices.
The currently available tools are shown in Table 9-1.
These boards may be purchased directly from the
Microchip web site at www.microchip.com.
TABLE 9-1:
DEVELOPMENT TOOLS
Board Name
Part #
Supported Devices
MCP42XX Digital Potentiometer PICtail Plus Demo MCP42XXDM-PTPLS
Board
MCP42XX
MCP4XXX Digital Potentiometer Daughter Board (1)
MCP4XXXDM-DB
MCP42XXX, MCP42XX, MCP4021,
and MCP4011
8-pin SOIC/MSOP/TSSOP/DIP Evaluation Board
SOIC8EV
Any 8-pin device in DIP, SOIC,
MSOP, or TSSOP package
14-pin SOIC/MSOP/DIP Evaluation Board
SOIC14EV
Any 14-pin device in DIP, SOIC, or
MSOP package
Note 1: Requires the use of a PICDEM Demo board (see User’s Guide for details)
TABLE 9-2:
TECHNICAL DOCUMENTATION
Application
Note Number
Title
Literature #
AN1080
Understanding Digital Potentiometers Resistor Variations
DS01080
AN737
Using Digital Potentiometers to Design Low Pass Adjustable Filters
DS00737
AN692
Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect
DS00692
AN691
Optimizing the Digital Potentiometer in Precision Circuits
DS00691
AN219
Comparing Digital Potentiometers to Mechanical Potentiometers
DS00219
—
Digital Potentiometer Design Guide
DS22017
—
Signal Chain Design Guide
DS21825
© 2008 Microchip Technology Inc.
DS22059B-page 63
MCP414X/416X/424X/426X
NOTES:
DS22059B-page 64
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
10.0
PACKAGING INFORMATION
10.1
Package Marking Information
Example:
8-Lead DFN (3x3)
XXXX
XYWW
NNN
Part Number
Code
Part Number
Code
MCP4141-502E/MF
DAAJ
MCP4142-502E/MF
DABC
MCP4141-103E/MF
DAAK
MCP4142-103E/MF
DABD
MCP4141-104E/MF
DAAM
MCP4142-104E/MF
DABF
MCP4141-503E/MF
DAAL
MCP4142-503E/MF
DABE
MCP4161-502E/MF
DAAT
MCP4162-502E/MF
DABG
MCP4161-103E/MF
DAAU
MCP4162-103E/MF
DABH
MCP4161-104E/MF
DAAW
MCP4162-104E/MF
DABK
MCP4161-503E/MF
DAAV
MCP4162-503E/MF
DABJ
Part Number
Code
Part Number
Code
MCP4141-502E/MS
414152
MCP4142-502E/MS
414252
MCP4141-103E/MS
414113
MCP4142-103E/MS
414213
MCP4141-104E/MS
414114
MCP4142-104E/MS
414214
MCP4141-503E/MS
414153
MCP4142-503E/MS
414253
MCP4161-502E/MS
416152
MCP4162-502E/MS
416252
MCP4161-103E/MS
416113
MCP4162-103E/MS
416213
MCP4161-104E/MS
416114
MCP4162-104E/MS
416214
MCP4161-503E/MS
416153
MCP4162-503E/MS
416253
8-Lead MSOP
XXXXXX
YWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DAAJ
E816
256
Example
414152
816256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS22059B-page 65
MCP414X/416X/424X/426X
8-Lead PDIP
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC
4141-502
E/P e3 256
0816
Example
XXXXXXXX
XXXXYYWW
4141502E
SN^^^0816
e3
NNN
256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS22059B-page 66
Example
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
Package Marking Information (Continued)
Example:
10-Lead DFN (3x3)
XXXX
YYWW
NNN
Part Number
Code
Part Number
Code
MCP4242-502E/MF
BAEM
MCP4262-502E/MF
BAEW
MCP4242-103E/MF
BAEP
MCP4262-103E/MF
BAEX
MCP4242-104E/MF
BAER
MCP4262-104E/MF
BAEZ
MCP4242-503E/MF
BAEQ
MCP4262-503E/MF
BAEY
10-Lead MSOP
BAEH
0816
256
Example
XXXXXX
Part Number
Code
Part Number
Code
YWWNNN
MCP4242-502E/MS
424252
MCP4262-502E/MS
426252
MCP4242-103E/MS
424213
MCP4262-103E/MS
426213
MCP4242-104E/MS
424214
MCP4262-104E/MS
426214
MCP4242-503E/MS
424253
MCP4262-503E/MS
426253
14-Lead PDIP
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
14-Lead SOIC (.150”)
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
14-Lead TSSOP
XXXXXXXX
YYWW
NNN
16-Lead QFN (4x4)
XXXXX
XXXXXX
XXXXXX
YYWWNNN
© 2008 Microchip Technology Inc.
423252
816256
Example
MCP4261
e3
502E/P^^
0816256
Example
MCP4261
502E/SL^^
e3
0816256
Example
4261502E
0816
256
Example
4261
502
e3
E/ML^^
0816256
DS22059B-page 67
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b
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© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
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© 2008 Microchip Technology Inc.
DS22059B-page 79
MCP414X/416X/424X/426X
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DS22059B-page 80
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
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DS22059B-page 81
MCP414X/416X/424X/426X
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DS22059B-page 82
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
APPENDIX A:
REVISION HISTORY
APPENDIX B:
Revision B (December 2008)
The following is the list of modifications:
1.
2.
3.
4.
5.
Updated IPU specifications to specify test
conditions and new limit.
Updated DFN and QFN package in “Package
Types (top view)”, to include Exposed Thermal
Pad samples (EP).
Added new descriptions in Section 3.0 “Pin
Descriptions”.
Added new Development Tool support item.
Updated Package Outline section.
Revision A (August 2007)
• Original Release of this Document.
MIGRATING FROM
THE MCP41XXX AND
MCP42XXX DEVICES
This is intended to give an overview of some of the
differences to be aware of when migrating from the
MCP41XXX and MCP42XXX devices.
B.1
MCP41XXX to MCP41XX
Differences
Here are some of the differences to be aware of:
1.
SI pin is now SDI/SDO pin, and the contents of
the device memory can be read
2. Need to address the Terminal Connect Feature
(TCON register) of MCP41XX
3. MCP41XX supports software Shutdown mode
4. New 5 kΩ version
5. MCP41XX have 7-bit resolution options
6. MCP41XX are Non-Volatile
7. Alternate pinout versions (for Rheostat
configuration)
8. Verify device’s electrical specifications
9. Interface signals are now high voltage tolerant
10. Interface signals now have internal pull-up
resistors
B.2
MCP42XXX to MCP42XX
Differences
Here are some of the differences to be aware of:
Hardware Reset (RS) pin replace by Hardware
Write Protect (WP) pin
2. Daisy chaining of devices is no longer supported
3. SDO pin allows contents of device memory to be
read
4. Need to address the Terminal Connect Feature
(TCON register) of MCP42XX
5. MCP42XX supports software Shutdown mode
6. New 5 kΩ version
7. MCP42XX have 7-bit resolution options
8. MCP42XX are Non-Volatile
9. Alternate package/pinout versions (for Rheostat
configuration)
10. Verify device’s electrical specifications
11. Interface signals are now high voltage tolerant
12. Interface signals now have internal pull-up
resistors
1.
© 2008 Microchip Technology Inc.
DS22059B-page 83
MCP414X/416X/424X/426X
NOTES:
DS22059B-page 84
© 2008 Microchip Technology Inc.
MCP414X/416X/424X/426X
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-XXX
X
/XX
Device
Resistance
Version
Temperature
Range
Package
Device
MCP4141:
MCP4141T:
MCP4142:
MCP4142T:
MCP4161:
MCP4161T:
MCP4162:
MCP4162T:
MCP4241:
MCP4241T:
MCP4242:
MCP4242T:
MCP4261:
MCP4261T:
MCP4262:
MCP4262T:
Resistance Version:
Single Non-Volatile 7-bit Potentiometer
Single Non-Volatile 7-bit Potentiometer
(Tape and Reel)
Single Non-Volatile 7-bit Rheostat
Single Non-Volatile 7-bit Rheostat
(Tape and Reel)
Single Non-Volatile 8-bit Potentiometer
Single Non-Volatile 8-bit Potentiometer
(Tape and Reel)
Single Non-Volatile 8-bit Rheostat
Single Non-Volatile 8-bit Rheostat
(Tape and Reel)
Dual Non-Volatile 7-bit Potentiometer
Dual Non-Volatile 7-bit Potentiometer
(Tape and Reel)
Dual Non-Volatile 7-bit Rheostat
Dual Non-Volatile 7-bit Rheostat
(Tape and Reel)
Dual Non-Volatile 8-bit Potentiometer
Dual Non-Volatile 8-bit Potentiometer
(Tape and Reel)
Dual Non-Volatile 8-bit Rheostat
Dual Non-Volatile 8-bit Rheostat
(Tape and Reel)
502
103
503
104
=
=
=
=
Temperature Range
I
E
= -40°C to +85°C (Industrial)
= -40°C to +125°C (Extended)
Package
MF
ML
MS
P
SN
SL
ST
UN
=
=
=
=
=
=
=
=
5 kΩ
10 kΩ
50 kΩ
100 kΩ
Plastic Dual Flat No-lead (3x3 DFN), 8/10-lead
Plastic Quad Flat No-lead (4x4 QFN), 16-lead
Plastic Micro Small Outline (MSOP), 8-lead
Plastic Dual In-line (PDIP) (300 mil), 8/14-lead
Plastic Small Outline (SOIC), (150 mil), 8-lead
Plastic Small Outline (SOIC), (150 mil), 14-lead
Plastic Thin Shrink Small Outline (TSSOP), 14-lead
Plastic Micro Small Outline (MSOP), 10-lead
© 2008 Microchip Technology Inc.
Examples:
a)
b)
c)
d)
e)
f)
g)
h)
MCP4141-502E/XX:
MCP4141T-502E/XX:
MCP4141-103E/XX:
MCP4141T-103E/XX:
MCP4141-503E/XX:
MCP4141T-503E/XX:
MCP4141-104E/XX:
MCP4141T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4142-502E/XX:
MCP4142T-502E/XX:
MCP4142-103E/XX:
MCP4142T-103E/XX:
MCP4142-503E/XX:
MCP4142T-503E/XX:
MCP4142-104E/XX:
MCP4142T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4161-502E/XX:
MCP4161T-502E/XX:
MCP4161-103E/XX:
MCP4161T-103E/XX:
MCP4161-503E/XX:
MCP4161T-503E/XX:
MCP4161-104E/XX:
MCP4161T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4162-502E/XX:
MCP4162T-502E/XX:
MCP4162-103E/XX:
MCP4162T-103E/XX:
MCP4162-503E/XX:
MCP4162T-503E/XX:
MCP4162-104E/XX:
MCP4162T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4241-502E/XX:
MCP4241T-502E/XX:
MCP4241-103E/XX:
MCP4241T-103E/XX:
MCP4241-503E/XX:
MCP4241T-503E/XX:
MCP4241-104E/XX:
MCP4241T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4242-502E/XX:
MCP4242T-502E/XX:
MCP4242-103E/XX:
MCP4242T-103E/XX:
MCP4242-503E/XX:
MCP4242T-503E/XX:
MCP4242-104E/XX:
MCP4242T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4261-502E/XX:
MCP4261T-502E/XX:
MCP4261-103E/XX:
MCP4261T-103E/XX:
MCP4261-503E/XX:
MCP4261T-503E/XX:
MCP4261-104E/XX:
MCP4261T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
a)
b)
c)
d)
e)
f)
g)
h)
MCP4262-502E/XX:
MCP4262T-502E/XX:
MCP4262-103E/XX:
MCP4262T-103E/XX:
MCP4262-503E/XX:
MCP4262T-503E/XX:
MCP4262-104E/XX:
MCP4262T-104E/XX:
5 kΩ, 8LD Device
T/R, 5 kΩ, 8LD Device
10 kΩ, 8-LD Device
T/R, 10 kΩ, 8LD Device
50 kΩ, 8LD Device
T/R, 50 kΩ, 8LD Device
100 kΩ, 8LD Device
T/R, 100 kΩ, 8LD Device
XX
=
=
=
=
=
=
=
=
MF for 8/10-lead 3x3 DFN
ML for 16-lead QFN
MS for 8-lead MSOP
P for 8/14-lead PDIP
SN for 8-lead SOIC
SL for 14-lead SOIC
ST for 14-lead TSSOP
UN for 10-lead MSOP
DS22059B-page 85
MCP414X/416X/424X/426X
NOTES:
DS22059B-page 86
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS22059B-page 87
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ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
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Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
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Tel: 91-80-4182-8400
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India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
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Tel: 34-91-708-08-90
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Fax: 44-118-921-5820
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Tel: 86-756-3210040
Fax: 86-756-3210049
01/02/08
DS22059B-page 88
© 2008 Microchip Technology Inc.