0.9 µA, High Precision Op Amps

MCP6031/2/3/4
0.9 µA, High Precision Op Amps
Features
Description
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The Microchip Technology Inc. MCP6031/2/3/4 family
of operational amplifiers (op amps) operate with a
single supply voltage as low as 1.8V, while drawing
ultra low quiescent current per amplifier (0.9 µA,
typical). This family also has low input offset voltage
(±150 µV, maximum) and rail-to-rail input and output
operation. This combination of features supports
battery-powered and portable applications.
Rail-to-Rail Input and Output
Low Offset Voltage: ±150 µV (maximum)
Ultra Low Quiescent Current: 0.9 µA (typical)
Wide Power Supply Voltage: 1.8V to 5.5V
Gain Bandwidth Product: 10 kHz (typical)
Unity Gain Stable
Chip Select (CS) capability: MCP6033
Extended Temperature Range:
- -40°C to +125°C
• No Phase Reversal
Applications
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•
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The MCP6031/2/3/4 family is offered in single
(MCP6031), single with power saving Chip Select (CS)
input (MCP6033), dual (MCP6032), and quad
(MCP6034) configurations.
Toll Booth Tags
Wearable Products
Battery Current Monitoring
Sensor Conditioning
Battery Powered
The MCP6031/2/3/4 family is designed with Microchip’s advanced CMOS process. All devices are
available in the extended temperature range, with a
power supply range of 1.8V to 5.5V.
Design Aids
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•
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The MCP6031/2/3/4 family is unity gain stable and has
a gain bandwidth product of 10 kHz (typical). These
specs make these op amps appropriate for low frequency applications, such as battery current
monitoring and sensor conditioning.
SPICE Macro Models
FilterLab® Software
Mindi™ Circuit Designer & Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Typical Application
IDD
Package Types
MCP6031
DFN, SOIC, MSOP
NC 1
8 NC
NC 1
8 CS
VIN– 2
7 VDD
VIN– 2
7 VDD
VIN+ 3
VSS 4
6 VOUT
5 NC
VIN+ 3
VSS 4
6 VOUT
5 NC
MCP6031
SOT-23-5
VDD
1.4V
to
5.5V
10Ω
100 kΩ
VOUT
MCP6031
1 MΩ
I DD
V DD – V OUT
= ----------------------------------------( 10 V/V ) ⋅ ( 10 Ω )
High Side Battery Current Sensor
© 2008 Microchip Technology Inc.
MCP6033
DFN, SOIC, MSOP
VOUT 1
MCP6034
SOIC, TSSOP
5 VDD
VOUTA 1
14 VOUTD
VINA– 2
13 VIND–
4 VIN–
VINA+ 3
VDD 4
12 VIND+
11 VSS
VINB+ 5
10 VINC+
VINB– 6
9 VINC–
VOUTB 7
8 VOUTC
VSS 2
VIN+ 3
MCP6032
SOIC, MSOP
VOUTA 1
8 VDD
VINA– 2
7 VOUTB
VINA+ 3
6 VINB–
5 VINB+
VSS 4
DS22041B-page 1
MCP6031/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD – VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN-)†† .......... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rating conditions for extended periods may affect device
reliability.
†† See 4.1.2 “Input Voltage And Current Limits”
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (TJ) .......................... +150°C
ESD protection on all pins (HBM; MM) ................ ≥ 4 kV; 400V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS=GND, TA= +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
VOS
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
-150
—
+150
Input Offset Drift with Temperature ΔVOS/ΔTA
—
±3.0
—
µV
VDD = 3.0V, VCM = VDD/3
Power Supply Rejection Ratio
PSRR
70
88
—
dB
IB
—
±1.0
100
pA
IB
—
60
—
pA
TA = +85°C
TA = +125°C
µV/°C TA= -40°C to +125°C,
VDD = 3.0V, VCM = VDD/3
VCM = VSS
Input Bias Current and Impedance
Input Bias Current
IB
—
2000
5000
pA
Input Offset Current
IOS
—
±1.0
—
pA
Common Mode Input Impedance
ZCM
—
1013||6
—
Ω||pF
ZDIFF
—
1013||6
—
Ω||pF
Common Mode Input Voltage
Range
VCMR
VSS − 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
70
95
—
dB
VCM = -0.3V to 2.1V,
VDD = 1.8V
72
93
—
dB
VCM = -0.3V to 5.8V,
VDD = 5.5V
70
89
—
dB
VCM = 2.75V to 5.8V,
VDD = 5.5V
72
93
—
dB
VCM = -0.3V to 2.75V,
VDD = 5.5V
95
115
—
dB
0.2V < VOUT < (VDD – 0.2V)
RL = 50 kΩ to VL
Differential Input Impedance
Common Mode
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
DS22041B-page 2
AOL
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS=GND, TA= +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
—
VDD – 10
mV
RL = 50 kΩ to VL,
0.5V input overdrive
—
±5
—
mA
VDD = 1.8V
—
±23
—
mA
VDD = 5.5V
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
VOL, VOH VSS + 10
ISC
Power Supply
Supply Voltage
Quiescent Current per Amplifier
VDD
1.8
—
5.5
V
IQ
0.4
0.9
1.35
µA
IO = 0, VCM = VDD,
VDD = 5.5V
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, CL = 60 pF, RL = 1 MΩ to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
kHz
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
10
—
Phase Margin
PM
—
65
—
°
Slew Rate
SR
—
4.0
—
V/ms
Input Noise Voltage
Eni
—
3.9
—
µVp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—
165
—
nV/√Hz
f = 1 kHz
Input Noise Current Density
ini
—
0.6
—
fA/√Hz
f = 1 kHz
G = +1 V/V
Noise
© 2008 Microchip Technology Inc.
DS22041B-page 3
MCP6031/2/3/4
MCP6033 CHIP SELECT ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS =GND, TA = +25°C, VCM = VDD/2,
VOUT = VDD/2, VL = VDD/2, CL = 60 pF, RL = 1 MΩ to VL and CS is tied low (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Logic Threshold, Low
VIL
VSS
—
0.2VDD
V
CS Input Current, Low
ICSL
—
-10
—
pA
CS Logic Threshold, High
VIH
0.8VDD
VDD
V
CS Input Current, High
ICSH
—
10
—
pA
CS = VDD
ISS
—
-400
—
pA
CS = VDD
IO(LEAK)
—
10
—
pA
CS = VDD
CS Low to Amplifier Output
Turn-on Time
tON
—
4
100
ms
CS ≤ 0.2VDD to VOUT = 0.9VDD/2,
G = +1 V/V, VIN = VDD/2,
RL = 50 kΩ to VL = VSS.
CS High to Amplifier Output
High-Z
tOFF
—
10
—
µs
CS ≥ 0.8VDD to VOUT = 0.1VDD/2,
G = +1 V/V, VIN = VDD/2,
RL = 50 kΩ to VL = VSS.
VHYST
—
0.3VDD
—
V
CS Low Specifications
CS = VSS
CS High Specifications
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Hysteresis
CS
VIL
VIH
tON
VOUT
High-Z
High-Z
ISS -400 pA
(typical)
ICS
tOFF
-0.9 µA
(typical)
-400 pA
(typical)
10 pA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP6033.
DS22041B-page 4
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SOT-23
θJA
—
256
—
°C/W
Thermal Resistance, 8L-DFN (2x3)
θJA
—
84
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
θJA
—
206
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Conditions
Temperature Ranges
Note
Thermal Package Resistances
Note:
1.1
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-3. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
VDD
2.2 µF
VIN
0.1 µF
RN
VOUT
MCP603X
CL
RL
VDD/2
VL
RG
RF
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
2.2 µF
VDD/2
0.1 µF
RN
VOUT
MCP603X
CL
RL
VIN
VL
RG
RF
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
© 2008 Microchip Technology Inc.
DS22041B-page 5
MCP6031/2/3/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL , CL = 60 pF and CS is tied low.
400
-300
200
100
-300
8%
6%
4%
2%
0%
0
6
12
18
24
30
250
200
150
100
50
0
-50
-100
-150
-200
-250
VDD = 3.0V
DS22041B-page 6
2.2
2.0
1.8
1.4
1.2
1.0
0.8
0.6
0.4
VDD = 5.5V
VDD = 1.8V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Offset Drift with Temperature (μV/°C)
FIGURE 2-3:
Input Offset Voltage Drift
with VDD = 3.0V and TA ≥ +85°C.
0.2
VDD = 1.8V
-0.4
Input Offset Voltage (μV)
640 Samples
VDD = 3.0V
VCM = VDD/3
TA = +85°C to +125°C
-6
6.0
-200
FIGURE 2-5:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 1.8V.
14%
-30 -24 -18 -12
5.5
0
-100
Common Mode Input Voltage (V)
FIGURE 2-2:
Input Offset Voltage Drift
with VDD = 3.0V and TA ≤ +85°C.
10%
5.0
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
300
-400
12%
4.5
4.0
3.5
400
640 Samples
VDD = 3.0V
VCM = VDD/3
TA = -40°C to +85°C
-20 -16 -12 -8 -4 0
4
8 12 16 20
Input Offset Drift with Temperature (μV/°C)
Percentage of Occurences
3.0
-0.5
FIGURE 2-4:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 5.5V.
Input Offset Voltage (μV)
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
Input Offset Voltage with
Common Mode Input Voltage (V)
1.6
FIGURE 2-1:
VDD = 3.0V.
2.5
VDD = 5.5V
-400
0%
-150 -120 -90 -60 -30 0 30 60 90 120 150
Input Offset Voltage (μV)
Percentage of Occurences
-200
2.0
2%
1.5
4%
0
-100
1.0
6%
100
0.5
8%
200
0.0
10%
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
300
-0.2
12%
0.0
640 Samples
VDD = 3.0V
VCM = VDD/3
Input Offset Voltage (μV)
Percentage of Occurences
14%
Output Voltage (V)
FIGURE 2-6:
Output Voltage.
Input Offset Voltage vs.
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
PSRR, CMRR (dB)
Input Noise Voltage Density
(nV/√Hz)
1,000
100
0.1
1E-1
1
1E+0
10
1E+1
100
1E+2
1k
1E+3
10k
1E+4
100k
1E+5
110
105
100
95
90
85
80
75
70
65
60
10000
Input Bias and Offset
Currents (pA)
175
150
125
100
75
50
f = 1 kHz
VDD = 5.5V
25
10
CMRR, PSRR (dB)
Input Bias Current (pA)
VDD = 5.5V
Input Offset Current
45
65
85
105
Ambient Temperature (°C)
125
FIGURE 2-11:
Input Bias, Offset Currents
vs. Ambient Temperature.
10000
CMRR
125
Input Bias Current
100
25
PSRR-
PSRR+
100
VDD = 5.5V
VCM = VDD
1
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
FIGURE 2-8:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
0
25
50
75
Ambient Temperature (°C)
1000
Common Mode Input Voltage (V)
100
90
80
70
60
50
40
30
20
10
0
-25
FIGURE 2-10:
Common Mode Rejection
Ratio, Power Supply Rejection Ratio vs. Ambient
Temperature.
200
-0.5
Input Noise Voltage Density
(nV/√Hz)
Input Noise Voltage Density
CMRR (VDD = 5.5V,
VCM = -0.3V to 5.8V)
PSRR (VDD = 1.8V to 5.5V, VCM = VSS)
-50
Frequency (Hz)
FIGURE 2-7:
vs. Frequency.
CMRR (VDD = 1.8V,
VCM = -0.3V to 2.1V)
1000
VDD = 5.5V
TA = +125°C
100
TA = +85°C
10
0.1
1
10
Frequency (Hz)
100
1000
FIGURE 2-9:
Common Mode Rejection
Ratio, Power Supply Rejection Ratio vs.
Frequency.
© 2008 Microchip Technology Inc.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
FIGURE 2-12:
Input Bias Current vs.
Common Mode Input Voltage.
DS22041B-page 7
MCP6031/2/3/4
VDD = 5.5V @ VCM = VDD
VDD = 1.8V @ VCM = VDD
VDD = 5.5V @ VCM = VSS
VDD = 1.8V @ VCM = VSS
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
DC Open-Loop Gain (dB)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
DC Open-Loop Gain (dB)
7.0
5.5
6.0
6.5
5.0
3.5
4.0
4.5
2.0
2.5
3.0
0.5
1.0
1.5
0.0
Quiescent Current
(μA/Amplifier)
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
DS22041B-page 8
-90
40
-120
20
-150
0
-180
VDD = 5.5V
130
125
120
115
110
105
100
95
90
85
80
-210
1k 10k
100 100
100 100k
1E+
00 05
Frequency (Hz) 0
1
10
Open-Loop Gain, Phase vs.
RL = 50 kΩ
VSS + 0.2V < VOUT < VDD - 0.2V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
FIGURE 2-17:
DC Open-Loop Gain vs.
Power Supply Voltage.
VCM = VSS
FIGURE 2-15:
Quiescent Current vs.
Power Supply Voltage with VCM = VSS.
-60
Power Supply Voltage VDD (V)
FIGURE 2-14:
Quiescent Current vs.
Power Supply Voltage with VCM = VDD.
Power Supply Voltage (V)
Open-Loop Phase
1.5
Power Supply Voltage (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-30
60
FIGURE 2-16:
Frequency.
VCM = VDD
0.0
Quiescent Current
(μA/Amplifier)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
-20
0.001
0.01 0.1
0 0.01
125
FIGURE 2-13:
Quiescent Current vs
Ambient Temperature.
0
Open-Loop Gain
100
Open-Loop Phase (°)
120
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Open-Loop Gain (V/V)
Quiescent Current
(μA/Amplifier)
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
130
125
VDD = 5.5V
120
115
110
105
VDD = 1.8V
100
95
90
Large Signal AOL
85 RL = 50 kΩ
80
0.00
0.05
0.10
0.15
0.20
0.25
Output Voltage Headroom
VDD - VOUT or VOUT - VSS (V)
FIGURE 2-18:
DC Open-Loop Gain vs.
Output Voltage Headroom.
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
Gain Bandwidth Product
(kHz)
120
110
100
90
80
70
Input Referred
60
100
1,000
Frequency (Hz)
Gain Bandwidth Product
Phase Margin
VDD = 5.5V
G = +1 V/V
60
Gain Bandwidth Product
50
40
30
VDD = 5.5V
G = +1 V/V
-50
20
10
0
-25
0
25
50
75 100 125
Ambient Temperature (°C)
FIGURE 2-21:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
© 2008 Microchip Technology Inc.
-25
0
25
50
75 100
Ambient Temperature (°C)
30
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-23:
Ouput Short Circuit Current
vs. Power Supply Voltage.
Output Voltage Swing (V
Phase Margin
VDD = 1.8V
G = +1 V/V
FIGURE 2-22:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
P-P )
90
Phase Margin (°)
Gain Bandwidth Product
(kHz)
FIGURE 2-20:
Gain Bandwidth Product,
Phase Margin vs. Common Mode Input Voltage.
80
70
Gain Bandwidth Product
-50
Common Mode Input Voltage (V)
20
18
16
14
12
10
8
6
4
2
0
Phase Margin
90
80
70
60
50
40
30
20
10
0
125
35
Phase Margin (°)
180
160
140
120
100
80
60
40
20
0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Gain Bandwidth Product
(kHz)
FIGURE 2-19:
Channel-to-Channel
Separation vs. Frequency ( MCP6032/4 only).
20
18
16
14
12
10
8
6
4
2
0
20
18
16
14
12
10
8
6
4
2
0
10,000
Output Short Circuit Current
(mA)
Channel-to-Channel
Seperation (dB)
130
Phase Margin (°)
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
10
VDD = 5.5V
VDD = 3.0V
VDD = 1.8V
1
0.1
10
FIGURE 2-24:
Frequency.
1K
100
1000
Frequency (Hz)
10K
10000
Output Voltage Swing vs.
DS22041B-page 9
MCP6031/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
VDD - VOH @ VDD = 1.8V
VOL - VSS @ VDD = 1.8V
100
10
VDD - VOH @ VDD = 5.5V
VOL - VSS @ VDD = 5.5V
1
10μ
1m
100µ
Output Current (A)
Time (100 μs/Div)
VDD - VOH
VSS - VOL
-25
FIGURE 2-28:
Pulse Response.
Output Voltage (20 mV/div)
Output Voltage Headroom
VDD - V OH or V SS - V OL (mV)
VDD = 5.5V
RL = 50 kΩ
-50
0
25
50
75
100
Ambient Temperature (°C)
FIGURE 2-29:
Response.
Output Voltage (V)
Slew Rate (V/ms)
Falling Edge, VDD = 5.5V
Falling Edge, VDD = 1.8V
5.0
4.0
3.0
Rising Edge, VDD = 5.5V
Rising Edge, VDD = 1.8V
1.0
-50
-25
FIGURE 2-27:
Temperature.
DS22041B-page 10
0
25
50
75
Ambient Temperature (°C)
100
VDD = 5.5V
G = -1 V/V
Time (100 μs/Div)
7.0
2.0
Small Signal Non-Inverting
125
FIGURE 2-26:
Output Voltage Headroom
vs. Ambient Temperature.
6.0
VDD = 5.5V
G = +1 V/V
10m
FIGURE 2-25:
Output Voltage Headroom
vs. Output Current.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Output Voltage (20 mV/div)
Output Voltage Headroom
VDD - V OH, V OL - V SS (mV)
1000
125
Slew Rate vs. Ambient
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Small Signal Inverting Pulse
VDD = 5.5V
G = +1 V/V
Time (0.5 ms/div)
FIGURE 2-30:
Pulse Response.
Large Signal Non-Inverting
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Internal CS Switch Ouptut (V)
Output Voltage (V)
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
VDD = 5.5V
G = -1 V/V
4.0
2.5
1.5
0.5
VDD = 3.0V
1.8
Ouptut Voltage (V)
Output Voltage (V)
Output High-Z
0.0
3.0
2.0
1.0
VDD = 5.0V
G = +2 V/V
Output On
1.5
Hysteresis
1.2
0.9
CS Input
High to Low
0.6
CS Input
Low to High
0.3
Output High-Z
0.0
-1.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
Chip Select Voltage (V)
Time (2 ms/div)
FIGURE 2-32:
The MCP6031/2/3/4 family
shows no phase reversal .
6.0
1.2
VDD = 5.5V
G = +1 V/V
RL = 50 kΩ to VSS
4.0
Output On
Output
High-Z
3.0
2.0
Output
High-Z
1.0
0.0
Time (1 ms/div)
FIGURE 2-33:
Chip Select (CS) to
Amplifier Output Response Time (MCP6033
only).
© 2008 Microchip Technology Inc.
Ouptut Voltage (V)
1.5
5.0
Chip Select
FIGURE 2-35:
Chip Select (CS) Hysteresis
(MCP6033 only) with VDD = 3.0V.
7.0
Output Voltage (V)
Chip Select Voltage (V)
CS Input
Low to High
2.1
VOUT
4.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
-7.0
-8.0
CS Input
High to Low
1.0
FIGURE 2-34:
Chip Select (CS) Hysteresis
(MCP6033 only) with VDD = 5.5V.
VIN
5.0
0.0
Hysteresis
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Chip Select Voltage (V)
Large Signal Inverting Pulse
6.0
Output On
3.0
Time (0.5 ms/div)
FIGURE 2-31:
Response.
VDD = 5.5V
3.5
VDD = 1.8V
Output On
0.9
Hysteresis
0.6
CS Input
High to Low
CS Input
Low to High
0.3
Output High-Z
0.0
0.0
0.2
0.4
0.6 0.8 1.0 1.2 1.4
Chip Select Voltage (V)
1.6
1.8
FIGURE 2-36:
Chip Select (CS) Hysteresis
(MCP6033 only) with VDD = 1.8V.
DS22041B-page 11
MCP6031/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
10k
10000
1k
1000
GN:
101 V/V
11 V/V
1 V/V
100
100
10
10
11
1
10
100
1k
1000
10k
10000
Frequency (Hz)
FIGURE 2-37:
Closed Loop Output
Impedance vs. Frequency.
DS22041B-page 12
10m
1.00E-02
1m
1.00E-03
100µ
1.00E-04
10µ
1.00E-05
1µ
1.00E-06
100n
1.00E-07
10n
1.00E-08
1n
1.00E-09
100p
1.00E-10
10p
1.00E-11
1p
1.00E-12
-IIN (A)
Closed Loop Output
Impedance (Ω)
100000
100k
100k
100000
+125°C
+85°C
+25°C
-40°C
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
VIN (V)
FIGURE 2-38:
Measured Input Current vs.
Input Voltage (below VSS).
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP6031
MCP6032
MCP6033
MCP6034
SOT-23-5
DFN,
MSOP,
SOIC
MSOP,
SOIC
DFN,
MSOP,
SOIC
SOIC,
TSSOP
Symbol
1
6
1
6
1
VOUT, VOUTA
Analog Output (op amp A)
4
2
2
2
2
VIN–, VINA–
Inverting Input (op amp A)
3
3
3
3
3
VIN+, VINA+
Non-inverting Input (op amp A)
5
7
8
7
4
VDD
—
—
5
—
5
VINB+
Non-inverting Input (op amp B)
—
—
6
—
6
VINB–
Inverting Input (op amp B)
—
—
7
—
7
VOUTB
Analog Output (op amp B)
—
—
—
—
8
VOUTC
Analog Output (op amp C)
—
—
—
—
9
VINC–
Inverting Input (op amp C)
—
—
—
—
10
VINC+
Non-inverting Input (op amp C)
2
4
4
4
11
VSS
—
—
—
—
12
VIND+
Non-inverting Input (op amp D)
—
—
—
—
13
VIND–
Inverting Input (op amp D)
Analog Output (op amp D)
3.1
Negative Power Supply
—
—
—
—
14
VOUTD
—
—
8
—
CS
Chip Select
—
1, 5, 8
—
1, 5
—
NC
No Internal Connection
Analog Outputs
Analog Inputs
The non-inverting and inverting inputs are highimpedance CMOS inputs with low bias currents.
3.3
Positive Power Supply
—
The output pins are low-impedance voltage sources.
3.2
Description
Chip Select Digital Input
3.4
Power Supply Pins
The positive power supply (VDD) is 1.8V to 5.5V higher
than the negative power supply (VSS). For normal
operation, the other pins are at voltages between VSS
and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
This is a CMOS, Schmitt-trigerred input that places the
device into a low power mode of operation.
© 2008 Microchip Technology Inc.
DS22041B-page 13
MCP6031/2/3/4
4.0
APPLICATION INFORMATION
VDD
The MCP6031/2/3/4 family of op amps is manufactured
using Microchip’s state-of-the-art CMOS process and
is specifically designed for low-power, high precision
applications.
4.1
D1
R1
Rail-to-Rail Input
4.1.1
PHASE REVERASAL
R2
R3
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
R1 >
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltage that go too far above
VDD; their breakdown voltage is high enough to allow
normal operation and low enough to bypass ESD
events within the specified limits.
VDD Bond
Pad
VIN+ Bond
Pad
Bond V –
IN
Pad
VSS Bond
Pad
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these op amps, the circuit they are in must limit the
voltages and currents at the VIN+ and VIN- pins (see
Absolute Maximum Ratings at the beginning of
Section 1.0 “Electrical Characteristics”). Figure 4-2
shows the recommended approach to protecting these
inputs. The internal ESD diodes prevent the input pins
(VIN+ and VIN-) from going too far below ground, and
the resistors R1 and R2 limit the possible current drawn
out of the input pins. Diodes D1 and D2 prevent the
input pins (VIN+ and VIN-) from going too far above VDD.
When implemented as shown, resistors R1 and R2 also
limit the current through D1 and D2.
DS22041B-page 14
FIGURE 4-2:
Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of the
resistors R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC currents into the input pins (VIN+ and
VIN-) should be very small. A significant amount of
current can flow out of the inputs when the common
mode voltage (VCM) is below ground (VSS).
4.1.3
Input
Stage
MCP603X
V2
The MCP6031/2/3/4 op amps are designed to prevent
phase reversal when the input pins exceed the supply
voltages. Figure 2-32 shows the input voltage exceeding the supply voltage without any phase reversal.
4.1.2
D2
V1
NORMAL OPERATION
The input stage of the MCP6031/2/3/4 op amps uses
two differential input stages in parallel. One operates at
a low common mode input voltage (VCM), while the
other operates at a high VCM. With this topology, the
device operates with a VCM up to 300 mV above VDD
and 300 mV below VSS. The input offset voltage is
measured at VCM = VSS – 0.3V and VDD + 0.3V to
ensure proper operation.
There are two transitions in input behavior as VCM is
changed. The first occurs, when VCM is near
VSS + 0.4V, and the second occurs when VCM is near
VDD – 0.5V. For the best distortion performance with
non-inverting gains, avoid these regions of operation.
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
Rail-to-Rail Output
The output voltage range of the MCP6031/2/3/4 op
amps is VSS + 10 mV (minimum) and VDD – 10 mV
(maximum) when RL = 50 kΩ is connected to VDD/2
and VDD = 5.5V. Refer to Figures 2-25 and 2-26 for
more information.
4.3
–
VOUT
CL
Output Loads and Battery Life
The MCP6031/2/3/4 op amp family has outstanding
quiescent current, which supports battery-powered
applications. There is minimal quiescent current glitching when Chip Select (CS) is raised or lowered. This
prevents excessive current draw, and reduced battery
life, when the part is turned off or on.
Heavy resistive loads at the output can cause excessive battery drain. Driving a DC voltage of 2.5V across
a 100 kΩ load resistor will cause the supply current to
increase by 25 µA, depleting the battery 28 times as
fast as IQ (0.9 µA, typical) alone.
High frequency signals (fast edge rate) across capacitive loads will also significantly increase supply current.
For instance, a 0.1 µF capacitor at the output presents
an AC impedance of 15.9 kΩ (1/2πfC) to a 100 Hz
sinewave. It can be shown that the average power
drawn from the battery by a 5.0 Vp-p sinewave
(1.77 Vrms), under these conditions, is
FIGURE 4-3:
Output resistor, RISO
stabilizes large capacitive loads.
Figure 4-4 gives recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit's noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
1000000
1M
PSupply = (VDD - VSS) (IQ + VL(p-p) f CL )
= (5V)(0.9 µA + 5.0Vp-p · 100Hz · 0.1µF)
= 4.5 µW + 50 µW
This will drain the battery about 12 times as fast as IQ
alone.
Capacitive Loads
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. While a unity-gain buffer (G = +1) is the most
sensitive to capacitive loads, all gains show the same
general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = +1), a small series
resistor at the output (RISO in Figure 4-3) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitance load.
© 2008 Microchip Technology Inc.
100k
100000
10k
10000
GN:
1 V/V
2 V/V
≥ 5 V/V
1k
1000
10p
100p 1.E-09
1n
10n
100n
1µ
1.E-11
1.E-10
1.E-08
1.E-07
1.E-06
Normalized Load Capacitance; CL/GN (F)
EQUATION 4-1:
4.4
RISO
MCP603X
+
VIN
Recommended R ISO (Ω)
4.2
FIGURE 4-4:
Recommended RISO values
for Capacitive Loads.
After selecting RISO for your circuit, double-check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable. Bench evaluation and simulations with the MCP6031/2/3/4 SPICE macro model are
very helpful.
4.5
MCP6033 Chip Select
The MCP6033 is a single op amp with Chip Select
(CS). When CS is pulled high, the supply current drops
to 0.4 nA (typical) and flows through the CS pin to VSS.
When this happens, the amplifier output is put into a
high impedance state. By pulling CS low, the amplifier
is enabled. If the CS pin is left floating, the amplifier will
not operate properly. Figure 1-1 shows the output
voltage and supply current response to a CS pulse.
DS22041B-page 15
MCP6031/2/3/4
4.6
Supply Bypass
With this family of operational amplifiers, the power
supply pin (VDD for single-supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high frequency performance. It can use a bulk
capacitor (i.e., 1 µF or larger) within 100 mm to provide
large, slow currents. This bulk capacitor can be shared
with other analog parts.
4.7
Unused Op Amps
An unused op amp in a quad package (MCP6034)
should be configured as shown in Figure 4-5. These
circuits prevent the output from toggling and causing
crosstalk. Circuits A sets the op amp at its minimum
noise gain. The resistor divider produces any desired
reference voltage within the output voltage range of the
op amp; the op amp buffers that reference voltage.
Circuit B uses the minimum number of components
and operates as a comparator, but it may draw more
current.
¼ MCP6034 (A)
¼ MCP6034 (B)
VDD
R1
VDD
VDD
VREF
R2
Guard Ring
FIGURE 4-6:
for Inverting Gain.
1.
2.
VIN– VIN+
VSS
Example Guard Ring Layout
Non-inverting Gain and Unity-Gain Buffer:
a. Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b. Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
common mode input voltage.
Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo
detectors):
a. Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b. Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
R2
V REF = V DD ⋅ -----------------R1 + R2
FIGURE 4-5:
4.8
Unused Op Amps.
PCB Surface Leakage
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012Ω. A 5V difference would
cause 5 pA of current to flow; which is greater than the
MCP6031/2/3/4 family’s bias current at +25°C
(±1.0 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-6.
DS22041B-page 16
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
4.9
4.9.1
Application Circuits
4.9.2
BATTERY CURRENT SENSING
The MCP6031/2/3/4 op amps’ Common Mode Input
Range, which goes 0.3V beyond both supply rails,
supports their use in high side and low side battery
current sensing applications. The ultra low quiescent
current (0.9 µA, typical) helps prolong battery life, and
the rail-to-rail output supports detection of low currents.
Figure 4-7 shows a high side battery current sensor
circuit. The 10Ω resistor is sized to minimize power
losses. The battery current (IDD) through the 10Ω
resistor causes its top terminal to be more negative
than the bottom terminal. This keeps the common
mode input voltage of the op amp below VDD, which is
within its allowed range. The output of the op amp will
also be below VDD, which is within its Maximum Output
Voltage Swing specification.
Use high gain before a comparator to improve the latter’s input offset performance. Figure 4-8 shows a gain
of 11 V/V placed before a comparator. The reference
voltage VREF can be any value between the supply
rails.
VIN
MCP6031
1 MΩ
100 kΩ
FIGURE 4-8:
Comparator.
4.9.3
IDD
1.4V
to
5.5V
VDD
10Ω
100 kΩ
VOUT
MCP6031
1 MΩ
V DD – V OUT
I DD = ----------------------------------------( 10 V/V ) ⋅ ( 10 Ω )
FIGURE 4-7:
Sensor.
High Side Battery Current
PRECISION COMPARATOR
MCP6541
Precision, Non-inverting
DRIVING MCP3421 ΔΣ A/D
CONVERTER
A RSH and CSH snubber reduces the output impedance
of MCP6031 op amp, which reduces the gain error
caused by switching transients, which occur at the
MCP3421 ADC's sampling rate. The snubber also
maintains feedback stability and avoids AC response
peaking and step response overshoot and ringing
(caused by the op amp’s inductive output impedance
resonating with the ADC’s input capacitance). The cost
for this improvement is low. Best of all, using an op amp
with higher supply current is avoided. See Figure 4-9.
This figure also includes a resistor to balance the
impedance at the ADC's inputs (RBAL) at the sampling
frequency; it may not be needed in all designs.
MCP6031
VIN
1.00 kΩ
RSH
1.00 kΩ
CSH
2.2 µF
FIGURE 4-9:
an R-C Snubber.
© 2008 Microchip Technology Inc.
VOUT
VREF
ZIND
2.25 MΩ MCP3421
ΔΣ
RBAL
1.00 kΩ
Driving the MCP3421 using
DS22041B-page 17
MCP6031/2/3/4
5.0
DESIGN AIDS
Microchip provides the basic design tools needed for
the MCP6031/2/3/4 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP6031/2/3/4
op amps is available on the Microchip web site at
www.microchip.com. This model is intended to be an
initial design tool that works well in the op amp’s linear
region of operation over the temperature range. See
the model file for information on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter (using
op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
FilterLab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Mindi™ Circuit Designer &
Simulator
Microchip’s Mindi™ Circuit Designer & Simulator aids
in the design of various circuits useful for active filter,
amplifier and power-management applications. It is a
free online circuit designer & simulator available from
the Microchip web site at www.microchip.com/mindi.
This interactive circuit designer & simulator enables
designers to quickly generate circuit diagrams,
simulate circuits. Circuits developed using the Mindi
Circuit Designer & Simulator can be downloaded to a
personal computer or workstation.
5.4
5.5
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit the Microchip web site at www.microchip.com/
analogtools.
Two of our boards that are especially useful are:
• P/N SOIC8EV: 8-Pin SOIC/MSOP/TSSOP/DIP
Evaluation Board
• P/N SOIC14EV: 14-Pin SOIC/TSSOP/DIP Evaluation Board
5.6
Application Notes
The following Microchip Analog Design Note and
Application Notes are available on the Microchip web
site at www.microchip. com/appnotes and are recommended as supplemental reference resources.
ADN003: “Select the Right Operational Amplifier for
your Filtering Circuits”, DS21821
AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
AN723: “Operational Amplifier AC Specifications and
Applications”, DS00723
AN884: “Driving Capacitive Loads With Op Amps”,
DS00884
AN990: “Analog Sensor Conditioning Circuits – An
Overview”, DS00990
These application notes and others are listed in the
design guide:
“Signal Chain Design Guide”, DS21825
MAPS (Microchip Advanced Part
Selector)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip website at www.microchip.com/
maps, the MAPS is an overall selection tool for
Microchip’s product portfolio that includes Analog,
Memory, MCUs and DSCs. Using this tool you can
define a filter to sort features for a parametric search of
devices and export side-by-side technical comparasion
reports. Helpful links are also provided for Datasheets,
Purchase, and Sampling of Microchip parts.
DS22041B-page 18
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Example:
5-Lead SOT-23 (MCP6031)
Device
XXNN
MCP6031T-E/OT
8-Lead 2x3 DFN (MCP6031 & MCP6033)
XXX
YWW
NN
EANN
EA25
Example:
ABV
809
25
Example:
8-Lead MSOP
XXXXXX
6031E
YWWNNN
809256
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
E-Temp
Code
Example:
MCP6033E
e3
SN^^0809
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS22041B-page 19
MCP6031/2/3/4
Package Marking Information (Continued)
14-Lead SOIC (150 mil) (MCP6034)
Example:
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6034)
XXXXXX
YYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS22041B-page 20
MCP6034
e3
E/SL^^
0711256
Example:
6034EST
0711
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
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DS22041B-page 21
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DS22041B-page 22
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
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DS22041B-page 23
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DS22041B-page 24
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DS22041B-page 25
MCP6031/2/3/4
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DS22041B-page 26
© 2008 Microchip Technology Inc.
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DS22041B-page 27
MCP6031/2/3/4
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DS22041B-page 28
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
APPENDIX A:
REVISION HISTORY
Revision B (March 2008)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
8.
Added SOT-23-5 and 2x3 DFN packages.
Added test circuits.
Corrected VOS temperature drift information.
Added Section 4.9.3.
Updated Package Marking Information.
Updated all package outline drawings and
added package outline drawings for SOT-23-5
and 2x3 DFN packages.
Added Landing Pattern drawings for 2x3 DFN
and 8-lead SOIC packages.
Updated information in Product Identification
System for SOT-23-5 and 2x3 DFN packages.
Revision A (March 2007)
• Original Release of this Document.
© 2008 Microchip Technology Inc.
DS22041B-page 29
MCP6031/2/3/4
NOTES:
DS22041B-page 30
© 2008 Microchip Technology Inc.
MCP6031/2/3/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
/XX
Device
Temperature
Range
Package
Device:
MCP6031:
MCP6031T:
MCP6032:
MCP6032T:
MCP6033:
MCP6033T:
MCP6034:
MCP6034T:
Single Op Amp
Single Op Amp (Tape and Reel)
Dual Op Amp
Dual Op Amp (Tape and Reel)
Single Op Amp with Chip Select
Single Op Amp with Chip Select
(Tape and Reel)
Quad Op Amp
Quad Op Amp (Tape and Reel)
Temperature Range:
E
= -40°C to +125°C
Package:
MC
MS
OT
SL
SN
ST
=
=
=
=
=
=
Plastic Dual Flat, No Lead, (2x3 DFN ) 8-lead **
Plastic MSOP, 8-lead
Plastic Small Outline Transistor, 5-lead *
Plastic SOIC (150 mil Body), 14-lead
Plastic SOIC, (150 mil Body), 8-lead
Plastic TSSOP (4.4mm Body), 14-lead
* This package is only available on the MCP6031 device.
** These packages are only available on the MCP6031 and
MCP6033 devices.
Examples:
a)
b)
c)
d)
e)
f)
g)
a)
b)
c)
d)
a)
b)
c)
d)
e)
f)
a)
b)
c)
d)
© 2008 Microchip Technology Inc.
MCP6031-E/SN: 8LD SOIC package.
MCP6031T-E/SN: Tape and Reel,
8LD SOIC package.
MCP6031-E/MS: 8LD MSOP package.
MCP6031T-E/MS: Tape and Reel,
8LD MSOP package.
MCP6031-E/MC: 8LD DFN package.
MCP6031T-E/MC: Tape and Reel,
8LD DFN package.
MCP6031T-E/OT: Tape and Reel,
5-LD SOT-23 package.
MCP6032-E/SN: 8LD SOIC package.
MCP6032T-E/SN: Tape and Reel,
8LD SOIC package.
MCP6032-E/MS: 8LD MSOP package
MCP6032T-E/MS: Tape and Reel
8LD MSOP package.
MCP6033-E/SN: 8LD SOIC package.
MCP6033T-E/SN: Tape and Reel,
8LD SOIC package.
MCP6033-E/MS: 8LD MSOP package.
MCP6033T-E/MS: Tape and Reel,
8LD MSOP package.
MCP6033-E/MC: 8LD DFN package.
MCP6033T-E/MC: Tape and Reel,
8LD DFN package.
MCP6034-E/SL: 14LD SOIC package.
MCP6034T-E/SL: Tape and Reel,
14LD SOIC package.
MCP6034-E/ST: 14LD TSSOP package.
MCP6034T-E/ST: Tape and Reel,
14LD TSSOP package.
DS22041B-page 31
MCP6031/2/3/4
NOTES:
DS22041B-page 32
© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, rfPIC and SmartShunt are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS22041B-page 33
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
01/02/08
DS22041B-page 34
© 2008 Microchip Technology Inc.
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