A1366 Datasheet

A1366
Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC
With Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output
Description
Features and Benefits
•
•
•
•
•
•
•
Factory programmed sensitivity and quiescent output
voltage with high resolution
Proprietary segmented linear interpolated temperature
compensation (TC) technology provides a typical accuracy of 1% across the full operating temperature range
Extremely low noise and high resolution achieved
via proprietary Hall element and low noise amplifier
circuits
120 kHz nominal bandwidth achieved via proprietary
packaging and chopper stabilization techniques
Patented circuits suppress IC output spiking during fast
current step inputs
Open circuit detection on ground pin (broken wire)
Undervoltage lockout for VCC below specification
Continued on the next page…
Package: 4-pin SIP (suffix KT)
The Allegro™ A1366 factory-programmable linear Halleffect current sensor IC has been designed to achieve high
accuracy and resolution. The goal is achieved through new
proprietary linearly interpolated temperature compensation
technology that is programmed at the Allegro factory, which
provides sensitivity and offset that are virtually flat across
the full operating temperature range. The flat performance
over temperature makes this IC ideally suited for current
sensing applications. Temperature compensation is done in
the digital domain with integrated EEPROM technology
without sacrificing the analog signal path bandwidth, making
this device ideal for HEV inverter, DC-to-DC converter, and
electric power steering (EPS) applications.
This ratiometric Hall-effect sensor IC provides a voltage output
that is proportional to the applied magnetic field. Sensitivity and
quiescent (zero field) output voltage are factory programmed
with high resolution which provides for an accuracy of less
than ±1%, typical, over temperature.
The sensor IC incorporates a highly sensitive Hall element with
a BiCMOS interface integrated circuit that employs a low noise,
small-signal high-gain amplifier, as well as a low-impedance
output stage, and a proprietary, high bandwidth dynamic offset
1 mm case thickness
Not to scale
Continued on the next page…
Functional Block Diagram
V+
VCC
To all subcircuits
Programming
Control
Temperature
Sensor
C BYPASS
Dynamic Offset
Cancellation
Sensitivity Control
GND
A1366-DS
EEPROM and
Control Logic
Signal Recovery
Offset Control
VOUT
CL
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
Features and Benefits (continued)
Description (continued)
•
•
•
•
•
•
cancellation technique. These advances in Hall-effect technology
work together to provide an industry leading sensing resolution at
the full 120 kHz bandwidth. The device has built in broken ground
wire detection for high reliability in automotive applications.
Ratiometric sensitivity and quiescent voltage output
Precise recoverability after temperature cycling
Wide ambient temperature range: –40°C to 150°C
Immune to mechanical stress
Extremely thin package: 1 mm case thickness
AEC Q-100 automotive qualified
Selection Guide
Part Number
Packing*
A1366LKTTN-1-T
4000 pieces per 13-in. reel
A1366LKTTN-2-T
4000 pieces per 13-in. reel
A1366LKTTN-5-T
4000 pieces per 13-in. reel
A1366LKTTN-10-T
4000 pieces per 13-in. reel
*Contact Allegro for additional packing options
Device parameters are specified across an extended ambient
temperature range: –40°C to 150°C. The A1366 sensor IC is
provided in an extremely thin case (1 mm thick), 4-pin SIP (single
in-line package, suffix KT) that is lead (Pb) free, with 100% matte
tin lead frame plating.
Sensitivity (Typ.)
(mV/G)
1
2.5
5
10
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
Absolute Maximum Ratings
Rating
Unit
Forward Supply Voltage
Characteristic
Symbol
VCC
Notes
6
V
Reverse Supply Voltage
VRCC
–0.1
V
Forward Output Voltage
VOUT
25
V
Reverse Output Voltage
VROUT
Output Source Current
IOUT(source)
VOUT to GND
IOUT(sink)
VCC to VOUT
Output Sink Current
Operating Ambient Temperature
Maximum Junction Temperature
Pin-out Diagram
1
V
10
mA
10
mA
–40 to 150
ºC
Tstg
–65 to 165
ºC
TJ(max)
165
ºC
TA
Storage Temperature
–0.1
L temperature range
Terminal List Table
Number
Name
1
VCC
2
VOUT
3
NC
4
GND
Function
Input power supply, use bypass capacitor to connect to ground
Output signal
No connection; connect to GND for optimal ESD performance
Ground
2 3 4
(Ejector pin mark on
opposite side)
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
3
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Thermal Characteristics may require derating at maximum conditions, see application information
Characteristic
Symbol
RθJA
Package Thermal Resistance
Test Conditions*
On 1-layer PCB with exposed copper limited to
solder pads
Value
Unit
174
ºC/W
*Additional thermal information available on the Allegro website
Power Dissipation versus Ambient Temperature
900
800
600
(R
500
θJ
A
=
17
4
ºC
400
/W
)
Power Dissipation, PD (mW)
700
300
200
100
0
20
40
60
80
100
120
140
Temperature, TA (°C)
160
180
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
COMMON OPERATING CHARACTERISTICS Valid through the full operating temperature range, TA, CBYPASS = 0.1 µF,
VCC = 5 V; unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit1
4.5
5.0
5.5
V
Electrical Characteristics
Supply Voltage
VCC
Supply Current
ICC
No load on VOUT
–
10
15
mA
Power-On Time2
tPO
TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =
2.5 mV/G, constant magnetic field of 320 G
–
78
–
µs
Temperature Compensation
Power-On Time2
tTC
TA = 150°C, CBYPASS = Open, CL= 1 nF, Sens =
2.5 mV/G, constant magnetic field of 320 G
–
30
–
µs
VUVLOH
TA = 25°C, VCC rising and device function
enabled
–
4
–
V
VUVLOL
TA = 25°C, VCC falling and device function
disabled
–
3.5
–
V
tUVLOE
TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =
2.5 mV/G, VCC Fall Time (5 V to 3 V) = 1.5 µs
–
64
–
µs
tUVLOD
TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =
2.5 mV/G, VCC Recover Time (3 V to 5 V) =
1.5 µs
–
14
–
µs
VPORH
TA = 25°C, VCC rising
–
2.6
–
V
VPORL
TA = 25°C, VCC falling
–
2.3
–
V
tPORR
TA = 25°C, VCC rising
µs
Undervoltage Lockout (UVLO)
Threshold2
UVLO Enable/Disable Delay
Time2
Power-On Reset Voltage2
Power-On Reset Release
Time2
–
64
–
6.5
7.5
–
V
Small signal –3 dB, CL = 1 nF, TA = 25°C
–
120
–
kHz
fC
TA = 25°C
–
500
–
kHz
Propagation Delay Time2
tPD
TA = 25°C, magnetic field step of 320 G,
CL = 1 nF, Sens = 2.5 mV/G
–
2.2
–
µs
Rise Time2
tR
TA = 25°C, magnetic field step of 320 G,
CL = 1 nF, Sens = 2.5 mV/G
–
3.6
–
µs
tRESPONSE
TA = 25°C, magnetic field step of 320 G,
CL = 1 nF, Sens = 2.5 mV/G
–
3.7
–
µs
4.7
–
–
V
–
–
400
mV
Supply Zener Clamp Voltage
Internal Bandwidth
Chopping Frequency3
Vz
BWi
TA = 25°C, ICC = 30 mA
Output Characteristics
Response Time2
Output Saturation Voltage2
VSAT(HIGH) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND
VSAT(LOW)
TA = 25°C, RL(PULLUP) = 10 kΩ to VCC
Continued on the next page…
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
COMMON OPERATING CHARACTERISTICS (continued) Valid through the full operating temperature range, TA;
CBYPASS = 0.1 µF, VCC = 5 V; unless otherwise specified
Characteristics
Broken Wire Voltage2
Symbol
Test Conditions
Min.
Typ.
Max.
Unit1
VBRK(HIGH) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC
–
VCC
–
V
VBRK(LOW) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND
–
100
–
mV
–
1.1
–
mGRMS/√¯(Hz)
Output Characteristics (continued)
Noise
BN
DC Output Resistance
Output Load Resistance
Output Load Capacitance4
Output Slew
Rate5
TA = 25°C, CL = 1 nF, Bandwidth = BWi
–
9
–
Ω
RL(PULLUP) VOUT to VCC
ROUT
4.7
–
–
kΩ
RL(PULLDWN) VOUT to GND
4.7
–
–
kΩ
CL
VOUT to GND
–
1
10
nF
SR
Sens = 2.5 mV/G, CL = 1 nF
–
230
–
V/ms
–1
< ±0.25
1
%
Error Components
Linearity Sensitivity Error2,6
Symmetry Sensitivity
Error2
Ratiometry Quiescent Voltage Output
Error2,7
Ratiometry Sensitivity Error2,7
LinERR
SymERR
–1
< ±0.25
1
%
RatERRVOUT(Q)
Through supply voltage range (relative to VCC
= 5 V)
–1
0
1
%
RatERRSens
Through supply voltage range (relative to VCC
= 5 V)
–
±1
–
%
11
G (gauss) = 0.1 mT (millitesla).
Characteristic Definitions section.
3f varies up to approximately ± 20% over the full operating ambient temperature range, T , and process.
C
A
4Output stability is maintained for capacitive loads as large as 10 nF.
5High-to-low transition of output voltage is a function of external load components and device sensitivity.
6Linearity applies to output voltage ranges of ±2 V from the quiescent output for bidirectional devices.
7Percent change from actual value at V
CC = 5 V, for a given temperature, through the supply voltage operating range.
2See
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
6
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366LKT-1-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Senisitivity3
Sensitivity Drift through
Temperature Range
Symbol
SensTA
ΔSensTC
Test Conditions
Measured using 600 G, TA = 25°C
Min.
Typ.
Max.
Unit2
0.975
1
1.025
mV/G
TA = 25°C to 150°C
-2.5
0
2.5
%
TA = -40°C to 25°C
-2.5
0
2.5
%
–
±1.25
–
%
Sensitivity Drift Due to
Package Hysteresis
∆SensPKG
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
Sensitivity Drift Over Lifetime4
∆SensLIFE
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
–
±1
–
%
TA = 25°C, CL = 1 nF
–
3.15
–
mVP-P
TA = 25°C, CL = 1 nF
–
0.5
–
mVRMS
Noise
Quiescent Output Voltage5
VN
testing
VOUT(Q)TA
TA = 25°C
2.490
2.500
2.510
V
VOUT(Q)HT
TA = 25°C to 150°C
2.490
2.500
2.510
V
VOUT(Q)LT
TA = –40°C to 25°C
2.490
2.500
2.510
V
–
±2
–
mV
Quiescent Output Voltage Drift
T = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
∆VOUT(Q)LIFE A
Over Lifetime4
testing
1See
Characteristic Performance Data section for parameter distributions across temperature range.
G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSens
LIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔV
OUT(Q)LIFE over lifetime.
21
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
7
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-2-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Senisitivity3
Symbol
SensTA
Sensitivity Drift through
Temperature Range
ΔSensTC
Test Conditions
Measured using 400 G, TA = 25°C
Min.
Typ.
Max.
Unit2
2.437
2.5
2.563
mV/G
TA = 25°C to 150°C
-2.5
0
2.5
%
TA = -40°C to 25°C
-2.5
0
2.5
%
–
±1.25
–
%
Sensitivity Drift Due to
Package Hysteresis
∆SensPKG
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
Sensitivity Drift Over Lifetime4
∆SensLIFE
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
–
±1
–
%
TA = 25°C, CL = 1 nF
–
7.875
–
mVP-P
TA = 25°C, CL = 1 nF
–
1.25
–
mVRMS
Noise
Quiescent Output
VN
Voltage5
testing
VOUT(Q)TA
TA = 25°C
2.490
2.500
2.510
V
VOUT(Q)HT
TA = 25°C to 150°C
2.490
2.500
2.510
V
VOUT(Q)LT
TA = –40°C to 25°C
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
2.490
2.500
2.510
V
–
±2
–
mV
Quiescent Output Voltage Drift
∆VOUT(Q)LIFE
Over Lifetime4
testing
1See
Characteristic Performance Data section for parameter distributions across temperature range.
G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSens
LIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔV
OUT(Q)LIFE over lifetime.
21
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-5-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Senisitivity3
Symbol
SensTA
Sensitivity Drift through
Temperature Range
ΔSensTC
Test Conditions
Measured using 200 G, TA = 25°C
Min.
Typ.
Max.
Unit2
4.875
5
5.125
mV/G
TA = 25°C to 150°C
-2.5
0
2.5
%
TA = -40°C to 25°C
-2.5
0
2.5
%
–
±1.25
–
%
Sensitivity Drift Due to
Package Hysteresis
∆SensPKG
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
Sensitivity Drift Over Lifetime4
∆SensLIFE
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
–
±1
–
%
TA = 25°C, CL = 1 nF
–
15.75
–
mVP-P
TA = 25°C, CL = 1 nF
–
2.5
–
mVRMS
Noise
Quiescent Output
VN
Voltage5
testing
VOUT(Q)TA
TA = 25°C
2.490
2.500
2.510
V
VOUT(Q)HT
TA = 25°C to 150°C
2.490
2.500
2.510
V
VOUT(Q)LT
TA = –40°C to 25°C
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
2.490
2.500
2.510
V
–
±2
–
mV
Quiescent Output Voltage Drift
∆VOUT(Q)LIFE
Over Lifetime4
testing
1See
Characteristic Performance Data section for parameter distributions across temperature range.
G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSens
LIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔV
OUT(Q)LIFE over lifetime.
21
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
9
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-10-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Senisitivity3
Symbol
SensTA
Sensitivity Drift through
Temperature Range
ΔSensTC
Test Conditions
Min.
Typ.
Max.
Unit2
Measured using 100 G, TA = 25°C
9.75
10
10.25
mV/G
TA = 25°C to 150°C
-2.5
0
2.5
%
TA = -40°C to 25°C
-2.5
0
2.5
%
–
±1.25
–
%
Sensitivity Drift Due to
Package Hysteresis
∆SensPKG
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
Sensitivity Drift Over Lifetime4
∆SensLIFE
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
–
±1
–
%
TA = 25°C, CL = 1 nF
–
31.5
–
mVP-P
TA = 25°C, CL = 1 nF
–
5
–
mVRMS
Noise
Quiescent Output
VN
Voltage5
testing
VOUT(Q)TA
TA = 25°C
2.485
2.500
2.515
V
VOUT(Q)HT
TA = 25°C to 150°C
2.485
2.500
2.515
V
VOUT(Q)LT
TA = –40°C to 25°C
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
2.485
2.500
2.515
V
–
±2
–
mV
Quiescent Output Voltage Drift
∆VOUT(Q)LIFE
Over Lifetime4
testing
1See
Characteristic Performance Data section for parameter distributions across temperature range.
G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSens
LIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, Cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔV
OUT(Q)LIFE over lifetime.
21
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
10
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
Characteristic Performance Data
Response Time (tRESPONSE)
400 G excitation signal with 10%-90% rise time = 1 µs
Sensitivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF
Input = 400 G Excitation Signal
80% of Input
Output (VOUT, mV)
tRESPONSE = 3.7 µs
80% of Output
Propagation Delay (tPD)
400 G excitation signal with 10%-90% rise time = 1 µs
Sensitivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF
Input = 400 G Excitation Signal
Output (VOUT, mV)
tPD = 2.2 µs
20% of Input
20% of Output
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
11
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
Rise Time (tR)
400 G excitation signal with 10%-90% rise time = 1 µs
Sensitivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF
Input = 400 G Excitation Signal
Output (VOUT, mV)
90% of Output
tR = 3.6 µs
10% of Output
Power-On Time(t PO )
400 G constant excitation signal, with VCC 10%- 90% rise time = 1.5 µs
Sensitivity = 2 mV/G, CBYPASS= Open, CL=1 nF
Supply (VCC, V)
VCC(min)
tPO = 78 µs
Output (VOUT, V)
90% of Output
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
12
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
UVLO Enable Time (t UVLOE )
VCC 5 V-3 V fall time = 1.5 µs
Sensitivity = 2 mV/G, CBYPASS= Open, CL=1 nF
VUVLOL
Supply (VCC, V)
tUVLOE = 63.6 µs
Output (VOUT, V)
Output = 0 V
UVLO Disable Time (t UVLOD )
VCC 3 V-5 V recovery time = 1.5 µs
Sensitivity = 2 mV/G, CBYPASS= Open, CL=1 nF
Supply (VCC, V)
VCC(min)
tUVLOD = 12 µs
Output (VOUT, V)
90% of Output
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
13
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Characteristic Definitions
Power-On Time (tPO) When the supply is ramped to its operat-
ing voltage, the device requires a finite time to power its internal
components before responding to an input magnetic field.
(%)
Power-On Time, tPO , is defined as: the time it takes for the output
voltage to settle within ±10% of its steady state value under an
applied magnetic field, after the power supply has reached its
minimum specified operating voltage, VCC(min), as shown in
figure 1.
90
Temperature Compensation Power-On Time (tTC ) After Power-
20
10
0
On Time, tPO , elapses, tTC is also required before a valid temperature compensated output.
Transducer Output
Rise Time, tR
Propagation Delay, tPD
Propagation Delay (tPD) The time interval between a) when the
applied magnetic field reaches 20% of it’s final value, and b)
when the output reaches 20% of its final value (see figure 2).
Applied Magnetic Field
t
Figure 2: Propagation Delay and Rise Time definitions
Rise Time (tR) The time interval between a) when the sensor IC
reaches 10% of its final value, and b) when it reaches 90% of its
final value (see Figure 2).
Response Time (tRESPONSE) The time interval between a) when
the applied magnetic field reaches 80% of its final value, and b)
when the sensor reaches 80% of its output corresponding to the
applied magnetic field (see Figure 3).
(%)
80
Quiescent Voltage Output (VOUT(Q)) In the quiescent state (no
Applied Magnetic Field
Transducer Output
Response Time, tRESPONSE
significant magnetic field: B = 0 G), the output, VOUT(Q) , has a
V
VCC
VCC(typ.)
0
VOUT
90% VOUT
t
Figure 3: Response Time definition
VCC(min.)
t1
t2
tPO
t1= time at which power supply reaches
minimum specified operating voltage
t2= time at which output voltage settles
within ±10% of its steady state value
under an applied magnetic field
0
+t
Figure 1: Power-on Time definition
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14
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
constant ratio to the supply voltage, VCC , throughout the entire
operating ranges of VCC and ambient temperature, TA .
Sensitivity (Sens) The presence of a south polarity magnetic
field, perpendicular to the branded surface of the package face,
increases the output voltage from its quiescent value toward the
supply voltage rail. The amount of the output voltage increase is
proportional to the magnitude of the magnetic field applied.
Conversely, the application of a north polarity field decreases the
output voltage from its quiescent value. This proportionality is
specified as the magnetic sensitivity, Sens (mv/G), of the device,
and it is defined as:
Sens =
VOUT(BPOS) – VOUT(BNEG)
BPOS – BNEG
,
(1)
where BPOS and BNEG are two magnetic fields with opposite
polarities.
Sensitivity Drift Through Temperature Range (ΔSensTC )
Second order sensitivity temperature coefficient effects cause the
magnetic sensitivity, Sens, to drift from its expected value over
the operating ambient temperature range, TA . The Sensitivity
Drift Through Temperature Range, ∆SensTC , is defined as:
SensTA – SensEXPECTED(TA)
∆SensTC =
× 100% . (2)
SensEXPECTED(TA)
Sensitivity Drift Due to Package Hysteresis (ΔSensPKG ) Package stress and relaxation can cause the device sensitivity at TA =
25°C to change during and after temperature cycling. The sensitivity drift due to package hysteresis, ∆SensPKG , is defined as:
Sens(25°C)2 – Sens(25°C)1
∆SensPKG =
(3)
× 100% ,
Sens(25°C)1
where Sens(25°C)1 is the programmed value of sensitivity at TA
= 25°C, and Sens(25°C)2 is the value of sensitivity at TA = 25°C,
after temperature cycling TA up to 150°C and back to 25°C.
Linearity Sensitivity Error (LinERR ) The A1366 is designed to
provide a linear output in response to a ramping applied magnetic
field. Consider two magnetic fields, B1 and B2. Ideally, the sensitivity of a device is the same for both fields, for a given supply
voltage and temperature. Linearity error is present when there is a
difference between the sensitivities measured at B1 and B2.
Linearity Error is calculated separately for the positive
(LinERRPOS ) and negative (LinERRNEG ) applied magnetic fields.
Linearity Error (%) is measured and defined as:
 SensBPOS2 
 × 100%
LinERRPOS = 1–
 SensBPOS1 
,
 SensBNEG2
 × 100%
LinERRNEG = 1–
 SensBNEG1
,
where:
SensBx =
|VOUT(Bx) – VOUT(Q)|
Bx
(4)
,
(5)
and BPOSx and BNEGx are positive and negative magnetic
fields, with respect to the quiescent voltage output such that
|BPOS2| = 2 × |BPOS1| and |BNEG2| = 2 × |BNEG1|.
Then:
LinERR = max( LinERRPOS , LinERRNEG )
.
(6)
Symmetry Sensitivity Error (SymERR ) The magnetic sensitiv-
ity of an A1366 device is constant for any two applied magnetic
fields of equal magnitude and opposite polarities. Symmetry
Error, SymERR (%), is measured and defined as:
 SensBPOS 
(7)
 × 100% ,
SymERR = 1–
 SensBNEG 
where SensBx is as defined in equation 7, and BPOSx and
BNEGx are positive and negative magnetic fields such that
|BPOSx| = |BNEGx|.
Ratiometry Error (RatERR ) The A1366 device features ratio-
metric output. This means that the Quiescent Voltage Output,
VOUT(Q) , and magnetic sensitivity, Sens, are proportional to the
Supply Voltage, VCC. In other words, when the supply voltage
increases or decreases by a certain percentage, each characteristic
also increases or decreases by the same percentage. Error is the
difference between the measured change in the supply voltage
relative to 5 V, and the measured change in each characteristic.
The ratiometric error in Quiescent Voltage Output,
RatERRVOUT(Q) (%), for a given supply voltage, VCC , is defined
as:
 VOUT(Q)(VCC) / VOUT(Q)(5V) 
 × 100% . (8)
RatERRVOUT(Q) = 1–
VCC / 5 V


The ratiometric error in magnetic sensitivity, RatERRSens (%), for
a given Supply Voltage, VCC , is defined as:
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15
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
 Sens(VCC) / Sens(5V) 
 × 100% .
RatERRSens = 1–
VCC / 5 V


(9)
Power-On Reset Voltage (VPOR ) On power-up, to initialize to
a known state and avoid current spikes, the A1366 is held in
a Reset state. The Reset signal is disabled when VCC reaches
VUVLOH and time tPORR has elapsed, allowing the output voltage
to go from a high impedance state into normal operation. During power-down, the Reset signal is enabled when VCC reaches
VPORL , causing the output voltage to go into a high impedance
state. (Note that detailed description of POR and UVLO operation can be found in the Functional Description section).
Power-On Reset Release Time (tPORR) When VCC rises to
VPORH , the Power-On Reset Counter starts. The A1366 output
voltage will transition from a high impedance state to normal
operation only when the Power-On Reset Counter has reached
tPORR and VCC has exceeded VUVLOH .
Undervoltage Lockout Threshold (VUVLO ) If VCC drops below
VUVLOL output voltage will be locked to GND. If VCC starts rising, the A1366 will come out of the Lock state when VCC reaches
VUVLOH .
UVLO Enable/Disable Delay Time (tUVLO ) When a falling VCC
reaches VUVLOL , time tUVLOE is required to engage Undervoltage
Lockout state. When VCC rises above VUVLOH , time tUVLOD is
required to disable UVLO and have a valid output voltage.
Broken Wire Voltage (VBRK ) If the GND pin is disconnected
(broken wire event), the output voltage will go to VBRK(HIGH) (if
a load resistor is connected to VCC) or to VBRK(LOW) (if a load
resistor is connected to GND).
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16
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
Functional Description
Power-On Reset (POR) and Undervoltage Lock-Out
(UVLO) Operation
The descriptions in this section assume: temperature = 25°C, no
output load (RL, CL ) , and no significant magnetic field is present.
• Power-Up At power-up, as VCC ramps up, the output is in a
high impedance state. When VCC crosses VPORH (location [1]
in Figure 4 and [1'] in Figure 5), the POR Release counter starts
counting for tPORR= 64 µs. At this point, if VCC exceeds VUVLOH
= 4 V [2'], the output will go to VCC / 2 after tUVLOD = 14 µs [3'].
If VCC does not exceed VUVLOH = 4 V [2], the output will stay in
the high impedance state until VCC reaches VUVLOH = 4 V [3] and
then will go to VCC / 2 after tUVLOD = 14 µs [4].
• VCC drops below VCC(min)= 4.5 V If VCC drops below VUVLOL
[4', 5], the UVLO Enable Counter starts counting. If VCC is still
below VUVLOL when counter reaches tUVLOE = 64 µs, the UVLO
function will be enabled and the ouput will be pulled near GND
[6]. If VCC exceeds VUVLOL before the UVLO Enable Counter
reaches 64 µs [5'] , the output will continue to be VCC / 2.
• Coming out of UVLO While UVLO is enabled [6] , if
VCC exceeds VUVLOH [7] , UVLO will be disabled after
tUVLOD =14 µs, and the output will be VCC / 2 [8].
• Power-Down As VCC ramps down below VUVLOL [6’, 9], the
UVLO Enable Counter will start counting. If VCC is higher than
VPORL = 2.3 V when the counter reaches tUVLOE = 64 µs, the
UVLO function will be enabled and the ouput will be pulled
near GND [10]. The output will enter a high impedance state as
VCC goes below VPORL [11]. If VCC falls below VPORL before the
UVLO Enable Couner reaches 64 µs, the output will transition
directly into a high impedance state [7'].
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17
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
VCC
1
2
3
5.0
VUVLOH 4.0
VUVLOL 3.5
VPORH 2.6
VPORL 2.3
5
4
6
7
9
8
tUVLOE =
64 µs
tUVLOE =
64 µs
GND
VOUT
10 11
Time
Slope =
VCC / 2
2.5
tPORR =
64 µs
GND
tUVLOD =
14 µs
tUVLOD =
14 µs
High Impedance
High Impedance
Time
Figure 4: POR and UVLO Operation: Slow Rise Time case
VCC
5.0
VUVLOH 4.0
VUVLOL 3.5
VPORH 2.6
VPORL 2.3
1’
2’
3’
4’ 5’
6’ 7’
< 64 µs
GND
VOUT
2.5
Time
tPORR =
64 µs
Slope =
VCC / 2
< 64 µs
Slope =
VCC / 2
tUVLOD = 14 µs
GND
High Impedance
High Impedance
Time
Figure 5: POR and UVLO Operation: Fast Rise Time case
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115 Northeast Cutoff
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18
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Detecting Broken Ground Wire
If the GND pin is disconnected, node A becoming open
(Figure 6), the VOUT pin will go to a high impedance state. Output voltage will go to VBRK(HIGH) if a load resistor RL(PULLUP) is
connected to VCC or to VBRK(LOW) if a load resistor RL(PULLDWN)
is connected to GND. The device will not respond to any applied
magnetic field.
If the ground wire is reconnected, A1366 will resume normal
operation.
VCC
VCC
VCC
RL(PULLUP)
VCC
VCC
VOUT
A1366
VOUT
A1366
RL(PULLDWN)
GND
GND
A
A
Connecting VOUT to RL(PULLUP)
Connecting VOUT to RL(PULLDWN)
Figure 6: Connections for Detecting Broken Ground Wire
Typical Application Drawing
V+
VOUT
VCC
A1366
R L(PULLDWN)
C BYPASS
GND
C L(typ)
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19
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Chopper Stabilization Technique
When using Hall-effect technology, a limiting factor for total
accuracy is the small signal voltage developed across the Hall
element. This voltage is disproportionally small relative to the
offset that can be produced at the output of the Hall sensor. This
makes it difficult to process the signal while maintaining an accurate, reliable output over the specified operating temperature and
voltage ranges. Chopper stabilization is a unique approach used
to minimize Hall offset on the chip.
The patented Allegro technique removes key sources of the output drift induced by thermal and mechanical stresses. This offset
reduction technique is based on a signal modulation-demodulation process. The undesired offset signal is separated from the
magnetic field-induced signal in the frequency domain, through
modulation. The subsequent demodulation acts as a modulation
process for the offset, causing the magnetic field-induced signal
to recover its original spectrum at base band, while the DC offset
becomes a high-frequency signal. The magnetic-sourced signal
then can pass through a low-pass filter, while the modulated DC
offset is suppressed. This high-frequency operation allows a
greater sampling rate, which results in higher accuracy and faster
signal-processing capability. This approach desensitizes the chip
to the effects of thermal and mechanical stresses, and produces
devices that have extremely stable quiescent Hall output voltages and precise recoverability after temperature cycling. This
technique is made possible through the use of a BiCMOS process, which allows the use of low-offset, low-noise amplifiers in
combination with high-density logic integration and a proprietary,
dynamic notch filter. The new Allegro filtering techniques are
far more effective at suppressing chopper induced signal noise
compared to the previous generation of Allegro chopper stabilized devices.
Concept of Chopper Stabilization
Regulator
Clock/Logic
Hall Element
Amp
Anti-Aliasing Tuned
LP Filter
Filter
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
20
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Package KT, 4-Pin SIP
+0.08
5.21 –0.05
B
10°
E
F
2.60
+0.08
1.00 –0.05
1.00 F
Mold Ejector
Pin Indent
+0.08
3.43 –0.05
F
A
0.89
MAX
NNNN
Branded
Face
YYWW
0.54
REF
1
C
Standard Branding Reference View
N = Device part number
Y = Last two digits of year of manufacture
W = Week of manufacture
12.14±0.05
+0.08
0.41 –0.05
For Reference Only; not for tooling use (reference DWG-9202)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
+0.08
0.20 –0.05
0.89
MAX
1
2
3
0.54
REF
4
+0.08
1.50 –0.05
Dambar removal protrusion (16X)
B
Gate and tie bar burr area
C
Branding scale and appearance at supplier discretion
D Thermoplastic Molded Lead Bar for alignment during shipment
D
1.27 NOM
A
E
Active Area Depth 0.37 mm REF
F
Hall element, not to scale
+0.08
1.00 –0.05
+0.08
5.21 –0.05
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
21
A1366
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
Revision History
Revision
Current
Revision Date
–
May 1. 2014
Description of Revision
Initial Release
Copyright ©2014, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its
use; nor for any infringement of patents or other rights of third parties which may result from its use.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
22
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