SiA513DJ Datasheet

New Product
SiA513DJ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
RDS(on) (Ω)
Qg (Typ.)
a
0.060 at VGS = 4.5 V
4.5
0.092 at VGS = 2.5 V
4.5a
0.110 at VGS = - 4.5 V
- 4.5a
0.185 at VGS = - 2.5 V
- 4.5a
20
- 20
ID (A)
3.5 nC
3 nC
• Halogen-free
• TrenchFET® Power MOSFETs
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
RoHS
COMPLIANT
APPLICATIONS
PowerPAK SC-70-6 Dual
• Portable Devices
1
S1
3
D2
D1
D1
6
Marking Code
D2
4
S2
G2
EBX
Part # code
G2
5
2.05 mm
S2
D1
2
G1
2.05 mm
G1
XXX
Lot Traceability
and Date code
Ordering Information: SiA513DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
N-Channel
20
P-Channel
- 20
± 12
4.5a
4.5a
4.5a, b, c
3.2b, c
15
4.5a
- 4.5a
- 4.5a
- 3.3b, c
- 2.4b, c
- 10
- 4.5a
1.6b, c
6.5
5
- 1.6b, c
6.5
5
1.9b, c
1.2b, c
1.9b, c
1.2b, c
TJ, Tstg
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
RthJA
RthJC
Typ.
Max.
P-Channel
Typ.
Max.
Unit
t≤5s
52
65
52
65
Maximum Junction-to-Ambientb, f
°C/W
Maximum Junction-to-Case (Drain)
Steady State
12.5
16
12.5
16
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
1
New Product
SiA513DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
20
VGS = 0 V, ID = - 250 µA
P-Ch
- 20
ID = 250 µA
N-Ch
22
ID = - 250 µA
P-Ch
- 16
ID = 250 µA
N-Ch
- 3.5
V
mV/°C
ID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.5
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
- 1.5
VDS = 0 V, VGS = ± 12 V
2.5
N-Ch
± 100
P-Ch
± 100
VDS = 20 V, VGS = 0 V
N-Ch
1
VDS = - 20 V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
10
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
-5
V
nA
µA
- 10
A
VGS = 4.5 V, ID = 3.4 A
N-Ch
0.050
0.060
VGS = - 4.5 V, ID = - 2.5 A
P-Ch
0.091
0.110
VGS = 2.5 V, ID = 1.1 A
N-Ch
0.076
0.092
VGS = - 2.5 V, ID = - 0.54 A
P-Ch
0.152
0.185
VDS = 10 V, ID = 3.4 A
N-Ch
8
VDS = - 10 V, ID = - 2.5 A
P-Ch
3.5
Ω
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Crss
Qg
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
N-Ch
360
P-Ch
250
N-Ch
70
P-Ch
70
N-Ch
40
pF
P-Ch
45
VDS = 10 V, VGS = 10 V, ID = 4.5 A
N-Ch
7.5
VDS = - 10 V, VGS = - 10 V, ID = - 3.3 A
P-Ch
6
9
N-Ch
3.5
5.3
4.5
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.5 A
P-Ch
3
N-Ch
0.9
P-Ch
0.7
N-Ch
0.7
P-Ch
0.9
N-Ch
2.5
P-Ch
8
Qgs
Gate-Drain Charge
Qgd
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.3 A
Gate Resistance
Rg
f = 1 MHz
12
nC
Ω
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 70443
S-80437-Rev. B, 03-Mar-08
New Product
SiA513DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 10 V, RL = 3.9 Ω
ID ≅ - 2.6 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Channel
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 10 V, Rg = 1 Ω
tf
P-Channel
VDD = - 10 V, RL = 3.9 Ω
ID ≅ - 2.6 A, VGEN = - 10 V, Rg = 1 Ω
IS
TC = 25 °C
td(off)
N-Ch
10
15
P-Ch
20
30
N-Ch
40
60
P-Ch
45
70
N-Ch
20
30
P-Ch
15
25
N-Ch
30
45
P-Ch
10
15
N-Ch
5
10
P-Ch
4
8
N-Ch
15
25
20
P-Ch
12
N-Ch
15
25
P-Ch
12
20
N-Ch
10
15
P-Ch
5
10
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
- 4.5
N-Ch
15
P-Ch
0.8
1.2
IS = - 2.6 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
P-Channel
IF = - 2.6 A, di/dt = - 100 A/µs, TJ = 25 °C
A
- 10
N-Ch
trr
tb
4.5
P-Ch
IS = 3.6 A, VGS = 0 V
N-Channel
IF = 3.6 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
N-Ch
N-Ch
15
30
P-Ch
20
40
N-Ch
10
20
P-Ch
10
20
N-Ch
10
P-Ch
8
N-Ch
5
P-Ch
12
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
3
New Product
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
VGS = 5 thru 3 V
4
I D - Drain Current (A)
I D - Drain Current (A)
12
9
2.5 V
6
2V
3
2
TC = 125 °C
1V
3
1
TC = 25 °C
1.5 V
0
0.0
0.5
1.0
1.5
2.0
TC = - 55 °C
2.5
0
0.0
3.0
0.5
1.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
2.5
3.0
Transfer Characteristics
0.20
500
0.16
400
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
0.12
VGS = 2.5 V
0.08
VGS = 4.5 V
Ciss
300
200
0.04
100
0.00
0
Coss
Crss
0
3
6
9
12
15
0
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
1.6
ID = 4.5 A
ID = 3.4 A
VGS = 2.5 V
8
VDS = 10 V
6
VDS = 16 V
4
2
(Normalized)
1.4
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
1.2
VGS = 4.5 V
1.0
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
New Product
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.30
ID = 3.4 A
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.25
TJ = 150 °C
0.20
0.15
TA = 125 °C
0.10
0.05
TJ = 25 °C
TA = 25 °C
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
20
1.4
1.3
ID = 250 µA
15
1.1
Power (W)
VGS(th) (V)
1.2
1.0
10
0.9
0.8
5
0.7
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power
100
1000
I D - Drain Current (A)
100
10 Limited by
R DS(on)*
100 µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
5
New Product
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
12
Power Dissipation (W)
ID - Drain Current (A)
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
New Product
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
7
New Product
SiA513DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
VGS = 5 thru 3 V
4
ID - Drain Current (A)
I D - Drain Current (A)
8
2.5 V
6
4
2V
3
2
TC = 125 °C
2
1
TC = 25 °C
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
400
300
0.20
VGS = 2.5 V
0.15
VGS = 4.5 V
0.10
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.25
200
100
Coss
0.05
Crss
0.00
0
0
2
4
6
8
10
0
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
10
ID = 2.5 A
ID = 3.3 A
VGS = 2.5 V
1.4
VDS = 10 V
6
VDS = 16 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
1.2
VGS = 4.5 V
1.0
0.8
2
0
0
2
4
Qg - Total Gate Charge (nC)
Gate Charge
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8
6
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
New Product
SiA513DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.4
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 2.5 A
TJ = 150 °C
0.3
0.2
TA = 125 °C
0.1
TA = 25 °C
TJ = 25 °C
0.0
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source
20
1.2
1.1
15
1.0
Power (W)
VGS(th) (V)
ID = 250 µA
0.9
10
5
0.8
0.7
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power
100
1000
10
Limited by
R DS(on)*
I D - Drain Current (A)
100 µs
1
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
9
New Product
SiA513DJ
Vishay Siliconix
8
8
6
6
Power Dissipation (W)
I D - Drain Current (A)
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Package Limited
4
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
New Product
SiA513DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70443.
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
11
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
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1
Document Number: 70487
Revision: 18-Oct-13
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000