Si4634DY Datasheet

Si4634DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0052 at VGS = 10 V
24.5
0.0067 at VGS = 4.5 V
21.7
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Qg (Typ.)
21.5 nC
APPLICATIONS
• Buck Converter
• Synchronous Rectifier
- Secondary Rectifier
• Notebook
SO-8
S
S
S
G
8
D
2
7
D
3
6
D
4
5
D
1
D
G
Top View
S
Ordering Information: Si4634DY-T1-E3 (Lead (Pb)-free)
Si4634DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Limit
30
± 20
24.5
19.5
Operating Junction and Storage Temperature Range
Unit
V
16.3b, c
13.0b, c
70
5.1
A
2.2b, c
30
45
5.7
3.6
mJ
2.5b, c
1.6b, c
- 55 to 150
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 74030
S09-0138-Rev. B, 02-Feb-09
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1
Si4634DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
33
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
2.6
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 6.4
1.4
30
µA
A
VGS = 10 V, ID = 15 A
0.0043
0.0052
VGS = 4.5 V, ID = 10 A
0.0055
0.0067
VDS = 15 V, ID = 15 A
78
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
3150
VDS = 15 V, VGS = 0 V, f = 1 MHz
420
VDS = 15 V, VGS = 10 V, ID = 10 A
45.5
68
21.5
33
166
VDS = 15 V, VGS = 4.5 V, ID = 10 A
8.0
f = 1 MHz
0.75
1.5
Turn-on Delay Time
tr
30
50
td(off)
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
30
33
55
10
20
14
25
10
20
33
55
8
16
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
15
td(on)
td(off)
Turn-Off Delay Time
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
tr
Rise Time
nC
6.2
td(on)
Rise Time
pF
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
5.1
ISM
VSD
70
IS = 3 A
0.75
1.1
A
V
Body Diode Reverse Recovery Time
trr
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
35
70
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
20
10
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74030
S09-0138-Rev. B, 02-Feb-09
Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
1.5
VGS = 10 thru 4 V
1.2
I D - Drain Current (A)
ID - Drain Current (A)
56
42
28
14
0.9
TC = 25 °C
0.6
TC = 125 °C
0.3
3V
TC = - 55 °C
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0075
3800
0.0067
3040
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.0059
0.0051
VGS = 10 V
2280
1520
0.0043
760
0.0035
0
0
14
28
42
56
70
Coss
Crss
0
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
ID = 15 A
8
VGS = 10 V
1.5
RDS(on) - On-Resistance
(Normalized)
VDS = 10 V
6
VDS = 15 V
VDS = 20 V
4
2
0
0.0
30
1.7
ID = 10 A
VGS - Gate-to-Source Voltage (V)
6
1.3
VGS = 4.5 V
1.1
0.9
9.6
19.2
28.8
38.4
48.0
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74030
S09-0138-Rev. B, 02-Feb-09
150
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Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
100
ID = 15 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.016
0.012
TA = 125 °C
0.008
0.004
TA = 25 °C
0.000
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
VSD - Source-to-Drain Voltage (V)
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
170
ID = 250 µA
0
136
ID = 5 mA
Power (W)
V GS(th) Variance (V)
0.3
- 0.3
102
68
- 0.6
- 0.9
- 50
34
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74030
S09-0138-Rev. B, 02-Feb-09
Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
27
I D - Drain Current (A)
22
16
11
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
7.0
1.80
5.6
1.44
Power (W)
Power (W)
Current Derating*
4.2
1.08
2.8
0.72
1.4
0.36
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74030
S09-0138-Rev. B, 02-Feb-09
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Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74030.
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Document Number: 74030
S09-0138-Rev. B, 02-Feb-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000