SS5P3, SS5P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency 1 • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C 2 • AEC-Q101 qualified available -Automotive ordering code: base P/NHM3 TO-277A (SMPC) K Cathode J-STD-020, Anode 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 2 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 30 V, 40 V IFSM 150 A EAS 20 mJ VF at IF = 5.0 A 0.403 V TJ max. 150 °C Package TO-277A (SMPC) Diode variations Single For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Base P/NHM3_X - halogen-free, RoHS-compliant, and automotive grade (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS5P3 SS5P4 S53 S54 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 5.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A EAS 20 mJ TJ, TSTG -55 to +150 °C Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Operating junction and storage temperature range 30 40 V Revision: 10-Dec-14 Document Number: 88982 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS5P3, SS5P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A TA = 25 °C IF = 5.0 A Maximum instantaneous forward voltage SYMBOL VF (1) IF = 2.5 A TA = 125 °C IF = 5.0 A TA = 25 °C Maximum reverse current Rated VR Typical junction capacitance 4.0 V, 1 MHz TA = 125 °C IR (2) CJ TYP. MAX. 0.416 - UNIT 0.476 0.52 0.312 - 0.403 0.45 61.8 250 μA 26.7 40 mA 280 - pF V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance SS5P3 SS5P4 RJA (1) 60 RJL 3 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS5P4-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS5P4-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS5P4HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS5P4HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel SS5P4HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel SS5P4HM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 10-Dec-14 Document Number: 88982 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS5P3, SS5P4 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 1000 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 6.0 Resistive or Inductive Load 5.0 4.0 3.0 2.0 TL measured at the Cathode Band Terminal 1.0 100 TA = 150 °C 10 TA = 125 °C 1 0.1 0.01 TA = 25 °C 0.001 0 80 90 100 110 120 130 140 10 150 20 30 40 50 60 90 100 Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 1000 D = 0.5 D = 0.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.3 2.5 D = 0.2 Junction Capacitance (pF) Average Power Loss (W) 80 Percent of Rated Peak Reverse Voltage (%) 3.0 D = 0.1 D = 1.0 2.0 1.5 T 1.0 0.5 D = tp/T tp 0 100 0 1 2 3 4 5 6 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 70 Lead Temperature (°C) TA = 150 °C 10 TA = 125 °C 1 TA = 25 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 10-Dec-14 Document Number: 88982 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS5P3, SS5P4 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 10-Dec-14 Document Number: 88982 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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